公开(公告)号：US20150376458A1

公开(公告)日：2015-12-31

申请号：US14749923

申请日：2015-06-25

Applicant: Cabot Microelectronics Corporation

Inventor： Steven Grumbine ,  Jeffrey Dysard ,  Ernest Shen ,  Mary Cavanaugh

IPC: C09G1/02

CPC classification number: C09G1/02 ,  B24B1/00 ,  B24B37/044 ,  C09G1/00 ,  C09G1/04 ,  C09G1/06 ,  C09K3/1436 ,  C09K3/1454 ,  C09K3/1463 ,  H01L21/30625 ,  H01L21/31053 ,  H01L21/3212

Abstract: A chemical-mechanical polishing composition includes colloidal silica abrasive particles dispersed in a liquid carrier having a pH in a range from about 1.5 to about 7. The colloidal silica abrasive particles include an aminosilane compound or a phosphonium silane compound incorporated therein. The composition may be used to polish a substrate including a silicon oxygen material such as TEOS.

Abstract translation: 化学 - 机械抛光组合物包括分散在pH在约1.5至约7范围内的液体载体中的胶体二氧化硅磨料颗粒。胶体二氧化硅磨料颗粒包括掺入其中的氨基硅烷化合物或鏻硅烷化合物。 组合物可用于抛光包括硅氧材料如TEOS的基材。

公开(公告)号：US20150259572A1

公开(公告)日：2015-09-17

申请号：US14203621

申请日：2014-03-11

Applicant: Cabot Microelectronics Corporation

Inventor： Steven GRUMBINE ,  Jeffrey DYSARD ,  Lin FU ,  William WARD ,  Glenn WHITENER

IPC: C09G1/02 ,  H01L21/306

CPC classification number: B24B37/044 ,  C09G1/02 ,  C09K3/1436 ,  C09K3/1463 ,  C23F1/40 ,  H01L21/3212

Abstract: A chemical mechanical polishing composition for polishing a substrate having a tungsten layer includes a water based liquid carrier, a colloidal silica abrasive dispersed in the liquid carrier and having a permanent positive charge of at least 6 mV, an amine compound in solution in the liquid carrier, and an iron containing accelerator. A method for chemical mechanical polishing a substrate including a tungsten layer includes contacting the substrate with the above described polishing composition, moving the polishing composition relative to the substrate, and abrading the substrate to remove a portion of the tungsten from the substrate and thereby polish the substrate.

Abstract translation: 一种用于抛光具有钨层的基材的化学机械抛光组合物包括水基液体载体，分散在液体载体中的胶体二氧化硅磨料并具有至少6mV的永久正电荷，液体载体中的溶液中的胺化合物 ，和含铁促进剂。 用于化学机械抛光包括钨层的基材的方法包括使基底与上述抛光组合物接触，使抛光组合物相对于基底移动，并研磨基底以从基底去除一部分钨，从而抛光 基质。

公开(公告)号：US20150221520A1

公开(公告)日：2015-08-06

申请号：US14686988

申请日：2015-04-15

Applicant: Cabot Microelectronics Corporation

Inventor： Pankaj SINGH ,  Lamon JONES

IPC: H01L21/306 ,  C09G1/02

CPC classification number: H01L21/30625 ,  C09G1/02 ,  C09K3/1436 ,  C09K3/1463 ,  H01L21/3212

Abstract: The present invention provides compositions and methods for polishing a molybdenum metal-containing surface. A polishing composition (slurry) described herein comprises an abrasive concentration of an inorganic particulate abrasive material (e.g., alumina or silica) suspended in an acidic aqueous medium containing a water soluble surface active material and an oxidizing agent. The surface active material is selected based on the zeta potential of the particulate abrasive, such that when the abrasive has a positive zeta potential, the surface active material comprises a cationic material, and when the particulate abrasive has a negative zeta potential, the surface active material comprises an anionic material, a non-ionic material, or a combination thereof.

Abstract translation: 本发明提供了用于研磨含有金属钼的表面的组合物和方法。 本文所述的抛光组合物（浆料）包含悬浮在含有水溶性表面活性物质和氧化剂的酸性含水介质中的无机颗粒磨料（例如氧化铝或二氧化硅）的磨料浓度。 基于颗粒磨料的ζ电位选择表面活性材料，使得当研磨剂具有正ζ电位时，表面活性材料包含阳离子材料，并且当颗粒磨料具有负ζ电位时，表面活性物质 材料包括阴离子材料，非离子材料或其组合。

公开(公告)号：US20150184029A1

公开(公告)日：2015-07-02

申请号：US14657594

申请日：2015-03-13

Applicant: Cabot Microelectronics Corporation

Inventor： Steven GRUMBINE ,  Shoutian Ll ,  William Ward ,  Pankaj Singh ,  Jeffrey Dysard

IPC: C09G1/02

CPC classification number: C09G1/02 ,  B24B37/044 ,  C09K3/1436 ,  C09K3/1463 ,  H01L21/31053

Abstract: The inventive method comprises chemically-mechanically polishing a substrate with an inventive polishing composition comprising a liquid carrier and abrasive particles that have been treated with a compound.

公开(公告)号：US20150159046A1

公开(公告)日：2015-06-11

申请号：US14100339

申请日：2013-12-09

Applicant: Cabot Microelectronics Corporation

Inventor： Dmitry DINEGA ,  Sairam SHEKHAR ,  Renhe JIA ,  Daniel Mateja

IPC: C09G1/02 ,  H01L21/306

CPC classification number: C09G1/02 ,  C09K3/1436 ,  C09K3/1463 ,  H01L21/31053

Abstract: The present invention provides chemical mechanical polishing compositions and methods for polishing a substrate comprising silicon dioxide and silicon nitride, which provide selective removal of SiN relative to silicon oxide (e.g., PETEOS) on patterned wafers. In one embodiment, a CMP method comprises abrading a surface of a substrate comprising SiN and silicon oxide with a CMP composition to remove at least some SiN therefrom. The CMP composition comprises, consists essentially of, or consists of a particulate abrasive (e.g., ceria) suspended in an aqueous carrier and containing a cationic polymer bearing pendant quaternized nitrogen-heteroaromatic moieties, wherein the composition has a pH of greater than about 3.

Abstract translation: 本发明提供化学机械抛光组合物和用于抛光包含二氧化硅和氮化硅的衬底的方法，其提供相对于图案化晶片上的氧化硅（例如，PETEOS）的SiN选择性去除。 在一个实施例中，CMP方法包括用CMP组合物研磨包括SiN和氧化硅的衬底的表面以从其中去除至少一些SiN。 CMP组合物包含悬浮在水性载体中的颗粒磨料（例如二氧化铈）或由其组成，并且含有带季铵化氮杂芳族部分的阳离子聚合物，其中该组合物具有大于约3的pH。

公开(公告)号：US20150102010A1

公开(公告)日：2015-04-16

申请号：US14050722

申请日：2013-10-10

Applicant: Cabot Microelectronics Corporation

Inventor： Brian REISS

IPC: C09G1/02 ,  B24B1/00

CPC classification number: C09G1/02 ,  B24B1/00

Abstract: Disclosed are a chemical-mechanical polishing composition and a method of polishing a substrate. The polishing composition comprises wet-process ceria abrasive particles, (e.g., about 120 nm or less), at least one alcohol amine, at least one surfactant having at least one hydrophilic moiety and at least one hydrophobic moiety, the surfactant having a molecular weight of about 1000, and water, wherein the polishing composition has a pH of about 6. The polishing composition can be used, e.g., to polish any suitable substrate, such as a polysilicon wafer used in the semiconductor industry.

Abstract translation: 公开了化学机械抛光组合物和抛光基材的方法。 抛光组合物包括湿法二氧化铈磨料颗粒（例如，约120nm或更小），至少一种醇胺，至少一种具有至少一个亲水部分和至少一个疏水部分的表面活性剂，所述表面活性剂具有分子量 约1000，和水，其中抛光组合物具有约6的pH。抛光组合物可以用于例如抛光任何合适的基底，例如在半导体工业中使用的多晶硅晶片。

公开(公告)号：US20150056895A1

公开(公告)日：2015-02-26

申请号：US13973639

申请日：2013-08-22

Applicant: Cabot Microelectronics Corporation

Inventor： George Fotou ,  Achla Khanna ,  Robert Vacassy

IPC: B24B37/24 ,  B24D11/00

CPC classification number: B24B37/24 ,  B24D11/001

Abstract: The invention provides a polishing pad for chemical-mechanical polishing comprising a porous polymeric material, wherein the polishing pad comprises closed pores and wherein the polishing pad has a void volume fraction of 70% or more. Also disclosed is a method for preparing the aforesaid polishing pad and a method of polishing a substrate by use of theaforesaid polishing pad.

Abstract translation: 本发明提供了一种用于化学机械抛光的抛光垫，其包括多孔聚合物材料，其中该抛光垫包括封闭孔，并且其中抛光垫具有70％或更多的空隙体积分数。 还公开了制备上述抛光垫的方法和使用上述抛光垫对基材进行抛光的方法。

公开(公告)号：US20150056892A1

公开(公告)日：2015-02-26

申请号：US14459452

申请日：2014-08-14

Applicant: Cabot Microelectronics Corporation

Inventor： Robert VACASSY ,  George FOTOU

IPC: B24B37/24 ,  C08J9/00 ,  H01L21/306 ,  B24B37/22 ,  B24B37/04

CPC classification number: B24B37/24 ,  B24B37/042 ,  B24B37/22 ,  C08J9/122 ,  C08J2201/032 ,  C08J2203/06 ,  C08J2205/044 ,  C08J2205/052 ,  C08J2207/00 ,  C08J2300/22 ,  C08J2300/26 ,  C08J2375/04

Abstract: Disclosed is a polishing pad for chemical-mechanical polishing. The polishing pad has a porous interface and a substantially non-porous bulk core. Also disclosed are related apparatus and methods for using and preparing the polishing pad.

Abstract translation: 公开了一种用于化学机械抛光的抛光垫。 抛光垫具有多孔界面和基本上无孔的块体。 还公开了用于使用和制备抛光垫的相关装置和方法。

公开(公告)号：US20040258882A1

公开(公告)日：2004-12-23

申请号：US10463730

申请日：2003-06-17

Applicant: Cabot Microelectronics Corporation

Inventor： Abaneshwar Prasad

IPC: B32B001/00

CPC classification number: B24B37/24 ,  B24D3/26 ,  B24D3/32 ,  Y10T428/24273 ,  Y10T428/24355 ,  Y10T428/24446 ,  Y10T428/249953 ,  Y10T428/268 ,  Y10T428/31551 ,  Y10T428/31591

Abstract: The invention provides a polishing pad for chemical-mechanical polishing comprising a body, a polishing surface, and a plurality of elongated pores, wherein about 10% or more of the elongated pores have an aspect ratio of about 2:1 or greater and are substantially oriented in a direction that is coplanar with the polishing surface. The invention further provides a method of polishing a substrate.

Abstract translation: 本发明提供了一种用于化学机械抛光的抛光垫，其包括主体，抛光表面和多个细长孔，其中约10％或更多的细长孔具有约2:1或更大的纵横比，并且基本上 在与抛光表面共面的方向上取向。 本发明还提供一种抛光衬底的方法。

公开(公告)号：US20040238753A1

公开(公告)日：2004-12-02

申请号：US10829841

申请日：2004-04-22

Applicant: Cabot Microelectronics Corporation

Inventor： David G. Mikolas

IPC: G01N023/00

CPC classification number: H01J37/317 ,  H01J37/08 ,  H01J37/3007

Abstract: This invention relates to an apparatus for processing particles. The apparatus comprises a particle source having an exist aperture; an extraction electrode located at the exist aperture; an acceleration electrode adjacent to the extraction electrode; a processing compartment adjacent to the acceleration electrode; and a deceleration electrode located adjacent to the processing compartment. The invention also relates to methods of processing particles and to particles processed by the apparatus and methods of the invention.

Abstract translation: 本发明涉及一种处理颗粒的装置。 该装置包括具有存在孔径的颗粒源; 位于存在的孔的引出电极; 与提取电极相邻的加速电极; 与加速电极相邻的加工室; 以及位于处理室附近的减速电极。 本发明还涉及处理颗粒和通过本发明的装置和方法处理的颗粒的方法。