公开(公告)号：US07745836B2

公开(公告)日：2010-06-29

申请号：US12118543

申请日：2008-05-09

Applicant: Jung-Ho Song ,  Ki-Soo Kim ,  Young-Ahn Leem ,  Gyung-Ock Kim

Inventor： Jung-Ho Song ,  Ki-Soo Kim ,  Young-Ahn Leem ,  Gyung-Ock Kim

IPC: H01L29/16

CPC classification number: H01L33/0045 ,  H01L33/02

Abstract: Provided are a superluminescent diode with a high optical power and a broad wavelength band, and a method of fabricating the same. The superluminescent diode includes: at least one high optical confinement factor (HOCF) region; and at least one low optical confinement factor (LOCF) region having a lower optical confinement factor than the HOCF region. The method includes obtaining a difference of optical confinement factors in the HOCF region and the LOCF region through a selective area growth method, the selective area growth method using a deposition thicknesses difference of thin layers according to a width difference of openings that expose a substrate.

Abstract translation: 提供了具有高光功率和宽波长带的超发光二极管及其制造方法。 超发光二极管包括：至少一个高光限制因子（HOCF）区域; 以及具有比HOCF区域更低的光限制因子的至少一个低光限制因子（LOCF）区域。 该方法包括通过选择性区域生长方法获得HOCF区域和LOCF区域中的光限制因子的差异，所述选择性区域生长方法使用根据暴露衬底的开口的宽度差的薄层的沉积厚度差。

公开(公告)号：US07738104B2

公开(公告)日：2010-06-15

申请号：US12111864

申请日：2008-04-29

Applicant: In-Gyoo Kim ,  Gyung-Ock Kim

Inventor： In-Gyoo Kim ,  Gyung-Ock Kim

IPC: G01N21/00 ,  G01J5/02

CPC classification number: G01N21/3504

Abstract: Provided are a gas sensing apparatus and a gas sensing method using the apparatus. The gas sensing apparatus includes a detection chamber, a light source, a light sensor, a gas source, and a controller. The light source is disposed at one end of the detection chamber, and a light sensor is disposed at the other end of the detection chamber. The gas source provides gas to the detection chamber. The controller controls the light source and the light sensor. The light source includes a laser supplying laser light, and a light scanner reflecting and scanning the laser light in the detection chamber. The controller includes a phase sensitive detector electrically connected to the light sensor.

Abstract translation: 提供了一种使用该装置的气体感测装置和气体感测方法。 气体感测装置包括检测室，光源，光传感器，气体源和控制器。 光源设置在检测室的一端，光检测器设置在检测室的另一端。 气体源向检测室提供气体。 控制器控制光源和光传感器。 光源包括提供激光的激光和在检测室中反射和扫描激光的光扫描器。 控制器包括电连接到光传感器的相敏检测器。

公开(公告)号：US20100144124A1

公开(公告)日：2010-06-10

申请号：US12536475

申请日：2009-08-05

Applicant: Sang Hoon KIM ,  Dong Woo Suh ,  Ji Ho Joo ,  Gyung Ock Kim ,  Hyun Tak Kim

Inventor： Sang Hoon KIM ,  Dong Woo Suh ,  Ji Ho Joo ,  Gyung Ock Kim ,  Hyun Tak Kim

IPC: H01L21/205

CPC classification number: H01L21/02532 ,  C30B25/02 ,  C30B29/08 ,  H01L21/02381 ,  H01L21/0262

Abstract: Provided is a method of growing a pure germanium (Ge) thin film with low threading dislocation density using reduced pressure chemical vapor deposition (RPCVD), which includes growing a Ge thin film on a silicon (Si) substrate at a low temperature, performing real-time annealing for a short period of time, and growing the annealed Ge thin film at a high temperature. The grown Ge single crystal thin film can overcome conventional problems of generation of a Si—Ge layer due to Si diffusion, and propagation of misfit dislocation to a high-temperature Ge thin film.

Abstract translation: 提供了使用减压化学气相沉积（RPCVD）生长具有低穿透位错密度的纯锗（Ge）薄膜的方法，其包括在低温下在硅（Si）衬底上生长Ge薄膜，实现真实 短时间退火，并在高温下生长退火的Ge薄膜。 生长的Ge单晶薄膜可以克服由于Si扩散而产生Si-Ge层的常规问题，以及错配位错到高温Ge薄膜的传播。

公开(公告)号：US20090154517A1

公开(公告)日：2009-06-18

申请号：US12118551

申请日：2008-05-09

Applicant: Young-Ahn LEEM ,  Ki-Soo KIM ,  Jung-Ho SONG ,  O-Kyun KWON ,  Gyung-Ock KIM

Inventor： Young-Ahn LEEM ,  Ki-Soo KIM ,  Jung-Ho SONG ,  O-Kyun KWON ,  Gyung-Ock KIM

IPC: H01S5/125

CPC classification number: H01S5/026 ,  H01S5/0215 ,  H01S5/1014 ,  H01S5/1032 ,  H01S5/12 ,  H01S5/32333

Abstract: Provided are a hybrid laser diode for single mode operation, and a method for manufacturing the hybrid laser diode. The hybrid laser diode includes a silicon layer, an active pattern disposed on the silicon layer, and a bonding layer disposed between the silicon layer and the active pattern. Here, the bonding layer includes diffraction patterns constituting a Bragg grating.

Abstract translation: 提供了用于单模操作的混合激光二极管和用于制造混合激光二极管的方法。 混合激光二极管包括硅层，设置在硅层上的有源图案以及设置在硅层和活性图案之间的结合层。 这里，结合层包括构成布拉格光栅的衍射图案。

公开(公告)号：US07378292B2

公开(公告)日：2008-05-27

申请号：US11293615

申请日：2005-12-02

Applicant: Moon Ho Park ,  Sahng Gi Park ,  Su Hwan Oh ,  Yong Soon Baek ,  Kwang Ryong Oh ,  Gyung Ock Kim ,  Sung Bock Kim

Inventor： Moon Ho Park ,  Sahng Gi Park ,  Su Hwan Oh ,  Yong Soon Baek ,  Kwang Ryong Oh ,  Gyung Ock Kim ,  Sung Bock Kim

IPC: H01L21/00

CPC classification number: H01S5/026 ,  H01S5/0425 ,  H01S5/12 ,  H01S5/2063 ,  H01S5/2275 ,  H01S5/3201 ,  H01S5/50 ,  H01S2302/00

Abstract: Provided is a method of fabricating a semiconductor optical device for use in a subscriber or a wavelength division multiplexing (WDM) optical communication system, in which a laser diode (LD) and a semiconductor optical amplifier (SOA) are integrated in a single active layer. The laser diode (LD) and the semiconductor optical amplifier (SOA) are optically connected to each other, and electrically insulated from each other by ion injection, whereby light generated from the LD is amplified by the SOA to provide low oscillation start current and high intensity of output light when current is individually injected through each electrode.

Abstract translation: 提供一种制造用于用户或波分复用（WDM）光通信系统的半导体光学器件的方法，其中激光二极管（LD）和半导体光放大器（SOA）集成在单个有源层中 。 激光二极管（LD）和半导体光放大器（SOA）彼此光学连接，并通过离子注入彼此电绝缘，由LD产生的光被SOA放大，以提供低振荡起始电流和高 当通过每个电极单独注入电流时输出光的强度。

公开(公告)号：US06614086B2

公开(公告)日：2003-09-02

申请号：US09927312

申请日：2001-08-13

Applicant: Gyung Ock Kim ,  In Kyu Kim ,  Kwang Eui Pyun

Inventor： Gyung Ock Kim ,  In Kyu Kim ,  Kwang Eui Pyun

IPC: H01L31107

CPC classification number: B82Y20/00 ,  H01L27/15 ,  H01L31/02165 ,  H01L31/035236 ,  H01L31/107

Abstract: There is disclosed a photodetector having two or more avalanche-gain layered structures and multi-terminals. The avalanche photodetector includes an emitter light absorption layer structure located between a collector layer and an emitter layer (top contact layer) stacked on a substrate. The photodetector further comprises multiple avalanche-gain layered structures consisting of a charge layer, a multiplication layer and a contact layer between the light absorption layer and said collector layer.

公开(公告)号：US5907159A

公开(公告)日：1999-05-25

申请号：US963393

申请日：1997-11-03

Applicant: Dong Wan Roh ,  Gyung Ock Kim

Inventor： Dong Wan Roh ,  Gyung Ock Kim

IPC: H01L29/68 ,  H01L29/76 ,  H01L29/06

CPC classification number: B82Y10/00 ,  H01L29/7606

Abstract: The present invention is to solve the problems caused in various methods used to improve the performance of the device by improvement of conventional base layer. The present invention discloses a hot electron device which can improve the performance of the device such as the improvement in the current density and decrease in transition time by reducing the dispersion phenomenon by introducing indium arsenide layer having v-shape conduction band due to the graded composition as the base layer of hetero structure hot electron device (HET).In addition, the present invention discloses a resonant tunneling hot electron device which is constructed by adding an emitter electron projection layer to the hot electron device of the present invention so that the Fermi energy and alignment can occur due to the stark shift and the projection of hot electron to the base region can occur through the Fermi energy and alignment.

Abstract translation: 本发明是为了解决通过改进传统基层而改进设备性能的各种方法所引起的问题。 本发明公开了一种热电子器件，其可以通过由于分级组成引入具有v形导带的砷化铟层，从而通过降低分散现象来提高器件的性能，例如电流密度的提高和转变时间的缩短 作为异质结构热电子器件（HET）的基层。 此外，本发明公开了一种谐振隧穿热电子器件，其通过在本发明的热电子器件中添加发射电子投射层而构成，从而能够发生费米能量和取向， 热电子到基极区域可以通过费米能量和对准发生。

公开(公告)号：US08017268B2

公开(公告)日：2011-09-13

申请号：US11813898

申请日：2006-01-12

Applicant: Hyun-Tak Kim ,  Doo-Hyeb Youn ,  Byung-Gyu Chae ,  Kwang-Yong Kang ,  Bong-Jun Kim ,  Yong-Wook Lee ,  Sun-Jin Yun ,  Jung-Wook Lim ,  Gyung-Ock Kim ,  Sung-Lyul Maeng

Inventor： Hyun-Tak Kim ,  Doo-Hyeb Youn ,  Byung-Gyu Chae ,  Kwang-Yong Kang ,  Bong-Jun Kim ,  Yong-Wook Lee ,  Sun-Jin Yun ,  Jung-Wook Lim ,  Gyung-Ock Kim ,  Sung-Lyul Maeng

IPC: H01M4/02 ,  H01M4/13

CPC classification number: H01M2/34 ,  H01M2/348 ,  H01M10/052 ,  H01M10/443 ,  H01M2200/00 ,  H01M2200/106

Abstract: Provided is a lithium secondary battery including a discharge unit capable of delaying or preventing a battery explosion. The lithium secondary battery includes a discharge unit disposed parallel to a battery body. The discharge unit includes a first electrode connected to a positive electrode of the battery body, a second electrode connected to a negative electrode of the battery body, and a discharge material film, disposed between the first electrode and the second electrode, inducing a abrupt discharge above a predetermined temperature. The discharge material film, e.g., a abrupt metal-insulator transition (MIT) material film can induce a abrupt discharge, thereby preventing or delaying a battery explosion.

Abstract translation: 提供一种锂二次电池，其包括能够延迟或防止电池爆炸的放电单元。 锂二次电池包括与电池体平行设置的放电单元。 放电单元包括连接到电池体的正极的第一电极，连接到电池体的负极的第二电极和设置在第一电极和第二电极之间的放电材料膜，引起突然的放电 高于预定温度。 放电材料膜，例如突然的金属 - 绝缘体转变（MIT）材料膜可以引起突然的放电，从而防止或延迟电池爆炸。

公开(公告)号：US07927988B2

公开(公告)日：2011-04-19

申请号：US12488577

申请日：2009-06-21

Applicant: In-Gyoo Kim ,  O-Kyun Kwon ,  Dong-Woo Suh ,  Gyung-Ock Kim

Inventor： In-Gyoo Kim ,  O-Kyun Kwon ,  Dong-Woo Suh ,  Gyung-Ock Kim

IPC: H01L21/425

CPC classification number: H01L21/2007 ,  H01L21/76251

Abstract: Provided is a method of fabricating a semiconductor device. The method includes forming a first layer, a second layer, an ion implantation layer between the first and second layers, and an anti-oxidation layer on the second layer, and performing a heat treating process to form an insulating layer between the first and second layers while preventing loss of the second layer using the anti-oxidation layer.

Abstract translation: 提供一种制造半导体器件的方法。 该方法包括在第一层和第二层之间形成第一层，第二层，离子注入层和第二层上的抗氧化层，并进行热处理工艺以在第一层和第二层之间形成绝缘层 同时防止使用抗氧化层损失第二层。

公开(公告)号：US07848602B2

公开(公告)日：2010-12-07

申请号：US12199517

申请日：2008-08-27

Applicant: Duk-Jun Kim ,  Jung-Ho Song ,  Jong-Moo Lee ,  Junghyung Pyo ,  Gyung-Ock Kim

Inventor： Duk-Jun Kim ,  Jung-Ho Song ,  Jong-Moo Lee ,  Junghyung Pyo ,  Gyung-Ock Kim

IPC: G02B6/10 ,  G02B6/26 ,  G02B6/34 ,  G02B6/42

CPC classification number: G02B6/12011 ,  G02B2006/12119

Abstract: Provided are a waveguide structure and an arrayed waveguide grating structure. The arrayed waveguide grating structure includes an input star coupler, an output star coupler, and a plurality of arrayed waveguides optically connecting the input star coupler and the output star coupler. Each of the arrayed waveguides includes at least one section having a high confinement factor and at least two sections having a relatively low confinement factor. The sections of the arrayed waveguides having a high confinement factor have the same structure.

Abstract translation: 提供了一种波导结构和阵列波导光栅结构。 阵列波导光栅结构包括输入星形耦合器，输出星形耦合器以及光学地连接输入星形耦合器和输出星形耦合器的多个阵列波导。 每个阵列波导包括具有高约束因子的至少一个部分和具有相对较低约束因子的至少两个部分。 具有高约束因子的阵列波导的部分具有相同的结构。