Abstract:
A circuit, apparatus and method obtains system margin at the receive circuit using phase shifted data sampling clocks while allowing the CDR to remain synchronized with the incoming data stream in embodiments. In an embodiment, a circuit includes first and second samplers to sample a data signal and output data and edge information in response to a data clock signal and an edge clock signal. A phase detector generates phase information in response to the data information and the edge information. A clock phase adjustment circuit generates the data clock signal and the edge clock signal in response to the data information during a synchronization mode. The clock phase adjustment circuit increments a phase of the data clock signal during a waveform capture mode.
Abstract:
A technique for determining performance characteristics of electronic devices and systems is disclosed. In one embodiment, the technique is realized by measuring a first response on a first transmission line from a single pulse transmitted on the first transmission line, and then measuring a second response on the first transmission line from a single pulse transmitted on at least one second transmission line, wherein the at least one second transmission line is substantially adjacent to the first transmission line. The worst case bit sequences for transmission on the first transmission line and the at least one second transmission line are then determined based upon the first response and the second response for determining performance characteristics associated with the first transmission line.
Abstract:
A system includes a first integrated circuit device and a second integrated circuit device. The first device transmits a data sequence to the second integrated circuit device, and the second device samples the data sequence to produce receiver data. The second device then transmits the receiver data back to the first device. Within the first integrated circuit device, a comparison between the data sequence and the receiver data is performed, and based on the comparison, the first device generates information representative of a calibrated timing offset. The first device uses the information representative of the calibrated timing offset to adjust timing associated with transferring write data from the first integrated circuit to the second integrated circuit.
Abstract:
An integrated circuit device is disclosed. In one particular exemplary embodiment, the integrated circuit device may comprise a first circuit to receive, in a multiplexed format, control information and address information, wherein the control information specifies a write operation and the address information specifies a location within a memory array for the write operation. The integrated circuit device may also comprise a second circuit that includes a plurality of output drivers to output write data to be written to the memory array during the write operation, wherein the write data is output after a number of clock cycles of an external clock signal transpire, wherein the write data is output in response to the control information, and wherein each output driver of the plurality of output drivers outputs two bits of the write data during a single clock cycle of the external clock signal.
Abstract:
At page 54, please delete the current abstract and replace it with the following: An integrated circuit memory device comprises a latch circuit to load an address using a first control signal. A first signal level transition of the first control signal is used to load the address. A memory array stores data at a memory location that is based on the address. An output buffer outputs the data after a period of time from the first signal level transition. A register stores a value that specifies between at least a first mode and a second mode. When the value specifies the first mode, the output buffer outputs the data in response to address transitions that occur after the first signal level transition. When the value specifies the second mode, the output buffer outputs data synchronously with respect to an external clock signal.
Abstract:
A receive circuit for receiving a signal transmitted via an electric signal conductor. A first sampling circuit generates a first sample value that indicates whether the signal exceeds a first threshold level, and a second sampling circuit generates a second sample value that indicates whether the signal exceeds a second threshold level. A first select circuit receives the first and second sample values from the first and second sampling circuits and selects, according to a previously generated sample value, either the first sample value or the second sample value to be output as a selected sample value.
Abstract:
A technique for receiving differential multi-PAM signals is disclosed. In one particular exemplary embodiment, the technique may be realized as a differential multi-PAM extractor circuit. In this particular exemplary embodiment, the differential multi-PAM extractor circuit comprises an upper LSB sampler circuit configured to receive a differential multi-PAM input signal and a first differential reference signal, and to generate a first differential sampled output signal. The differential multi-PAM extractor circuit also comprises a lower LSB sampler circuit configured to receive the differential multi-PAM input signal and a second differential reference signal, and to generate a second differential sampled output signal. The differential multi-PAM extractor circuit further comprises a combiner circuit configured to receive the first differential sampled output signal and the second differential sampled output signal, and to generate a differential LSB output signal indicating an LSB value of the differential multi-PAM input signal.
Abstract:
The present invention includes a memory subsystem comprising at least two semiconductor devices, including at least one memory device, connected to a bus, where the bus includes a plurality of bus lines for carrying substantially all address, data and control information needed by said memory devices, where the control information includes device-select information and the bus has substantially fewer bus lines than the number of bits in a single address, and the bus carries device-select information without the need for separate device-select lines connected directly to individual devices. The present invention also includes a protocol for master and slave devices to communicate on the bus and for registers in each device to differentiate each device and allow bus requests to be directed to a single or to all devices. The present invention includes modifications to prior-art devices to allow them to implement the new features of this invention. In a preferred implementation, 8 bus data lines and an AddressValid bus line carry address, data and control information for memory addresses up to 40 bits wide.
Abstract:
The present invention includes a memory subsystem comprising at least two semiconductor devices, including at least one memory device, connected to a bus, where the bus includes a plurality of bus lines for carrying substantially all address, data and control information needed by said memory devices, where the control information includes device-select information and the bus has substantially fewer bus lines than the number of bits in a single address, and the bus carries device-select information without the need for separate device-select lines connected directly to individual devices. The present invention also includes a protocol for master and slave devices to communicate on the bus and for registers in each device to differentiate each device and allow bus requests to be directed to a single or to all devices. The present invention includes modifications to prior-art devices to allow them to implement the new features of this invention. In a preferred implementation, 8 bus data lines and an AddressValid bus line carry address, data and control information for memory addresses up to 40 bits wide.
Abstract:
A method of operation of a synchronous memory device. The memory device includes an array of dynamic random access memory cells. The method of operation of the memory device includes receiving an external clock signal, and sampling a first operation code synchronously with respect to the external clock signal, the first operation code specifying a write operation. Additionally, the method of operation of the memory device includes sampling data after a number of clock cycles of the external clock signal transpire. The data is sampled in response to the first operation code.