公开(公告)号：US08771743B2

公开(公告)日：2014-07-08

申请号：US13055091

申请日：2008-09-02

Applicant: Do Hoon Kim ,  Eun Jung An ,  Jae Sung Hwang ,  Hong Ju Shin ,  Won Seok Park ,  Chang Geun Yi ,  Jong Hee Park ,  Jeong Hwan Kim ,  Jin Woong Kim ,  Jung A Seo ,  Yong Jin Kim ,  Jong Won Shim ,  Mi Jin Kim

Inventor： Do Hoon Kim ,  Eun Jung An ,  Jae Sung Hwang ,  Hong Ju Shin ,  Won Seok Park ,  Chang Geun Yi ,  Jong Hee Park ,  Jeong Hwan Kim ,  Jin Woong Kim ,  Jung A Seo ,  Yong Jin Kim ,  Jong Won Shim ,  Mi Jin Kim

IPC: A61K8/68 ,  A61K9/16

CPC classification number: A61K9/5078 ,  A61K8/0245 ,  A61K8/68 ,  A61K9/0014 ,  A61K9/10 ,  A61K2800/412 ,  A61K2800/614 ,  A61Q19/007

Abstract: Provided are: a multi-layered lamellar granule comprising a nucleating agent, a ceramide-containing artificial stratum corneum lipid lamellar layer which encases the nucleating agent and a polymer layer disposed on the artificial stratum corneum lipid lamellar layer; and an external skin application composition comprising the same. The external skin application composition shows improved moisturizing and barrier repair capabilities when applied to the skin, which can be advantageously used in cosmetics and pharmaceuticals.

Abstract translation: 提供：包含成核剂，包含成核剂的含神经酰胺的人造角质层脂质层层和设置在人造角质层脂层上的聚合物层的多层片状颗粒; 和包含其的外用皮肤应用组合物。 外用皮肤应用组合物在施用于皮肤时显示改善的保湿和屏障修复能力，其可有利地用于化妆品和药物中。

公开(公告)号：US20130323785A1

公开(公告)日：2013-12-05

申请号：US13883264

申请日：2011-11-04

Applicant: Jung Hoon Sohn ,  Jung Hoon Bae ,  Mi Jin Kim ,  Hyun Jin Kim ,  Soon Ho Park ,  Kwang Mook Lim

Inventor： Jung Hoon Sohn ,  Jung Hoon Bae ,  Mi Jin Kim ,  Hyun Jin Kim ,  Soon Ho Park ,  Kwang Mook Lim

IPC: C07K14/485 ,  C12R1/645

CPC classification number: C07K14/485 ,  C12N15/81 ,  C12R1/645

Abstract: The present invention relates to a method for producing hEGF (human epidermal growth factor) which has the same activity as the wild form, in high concentration and with a high degree of purity. More specifically, the invention relates to an hEGF expression vector comprising a nucleic acid sequence coding for the polypeptide of sequence number 14; a host cell in which the expression vector has been genetically transformed; and a method for producing hEGF, comprising a step in which the expression vector is created and is genetically transformed in yeast from which the KEX1 gene is lacking. Using the method of the present invention, it is possible to produce a large volume of human derived EGF which has the same size and activity as human derived EGF, and this EGF can be used in various ways such as in medicine and cosmetics.

Abstract translation: 本发明涉及以高浓度和高纯度生产具有与野生型相同的活性的hEGF（人表皮生长因子）的方法。 更具体地，本发明涉及包含编码序列号14的多肽的核酸序列的hEGF表达载体; 其中表达载体已被遗传转化的宿主细胞; 以及生产hEGF的方法，包括其中缺少表达载体并在KEX1基因缺失的酵母中遗传转化的步骤。 使用本发明的方法，可以生产与人源性EGF具有相同大小和活性的大量人源性EGF，并且该EGF可以以各种方式用于医药和化妆品中。

公开(公告)号：US20120187279A1

公开(公告)日：2012-07-26

申请号：US13432991

申请日：2012-03-28

Applicant: Mi Jin KIM ,  Bong Ki Mheen ,  Young Joo Song ,  Seong Su Park

Inventor： Mi Jin KIM ,  Bong Ki Mheen ,  Young Joo Song ,  Seong Su Park

IPC: H01L27/148

CPC classification number: H01L27/14609 ,  H04N5/235 ,  H04N5/3559 ,  H04N5/3597 ,  H04N5/374

Abstract: A sensing method of an image sensor. The image sensor includes: a light receiving device; a signal conversion unit including a transfer transistor having a plurality of transfer gates and for converting photocharges generated by the light receiving device into a voltage to output the voltage; and a sensing control unit for generating at least two reset signals and/or at least two transfer signals applied to the transfer gates of the transfer transistor during a one-time photosensing cycle. The image sensor is obtained by changing the structure and driving method of a transfer transistor of a typical 4-transistor CMOS image sensor and employs a deep depletion operation and a multiple reset operation, thereby reducing an image lag and increasing the well capacity of the light receiving device.

Abstract translation: 图像传感器的感测方法。 图像传感器包括：光接收装置; 信号转换单元，包括具有多个传输门并将由光接收装置产生的光电荷转换成电压以输出电压的传输晶体管; 以及感测控制单元，用于在一次光敏周期期间产生施加到传输晶体管的传输门的至少两个复位信号和/或至少两个传输信号。 图像传感器通过改变典型的4晶体管CMOS图像传感器的传输晶体管的结构和驱动方法获得，并且采用深度耗尽操作和多重复位操作，从而减少图像滞后并增加光阱的容量 接收设备。

公开(公告)号：US20120184499A1

公开(公告)日：2012-07-19

申请号：US13427352

申请日：2012-03-22

Applicant: Hyeong Kyu LEE ,  Sei Ryang-Oh ,  Kyung Seop AHN ,  Sang Ku LEE ,  Joong Ku LEE ,  Ok Kyoung KWON ,  Doo Young KIM ,  Hyouk JOUNG ,  Gui Hua QUAN ,  Mi Jin KIM ,  Bo Young PARK

Inventor： Hyeong Kyu LEE ,  Sei Ryang-Oh ,  Kyung Seop AHN ,  Sang Ku LEE ,  Joong Ku LEE ,  Ok Kyoung KWON ,  Doo Young KIM ,  Hyouk JOUNG ,  Gui Hua QUAN ,  Mi Jin KIM ,  Bo Young PARK

IPC: A61K31/7048 ,  A61P11/06 ,  A61P29/00 ,  A61P37/08

CPC classification number: A61K31/7048 ,  A61K9/2059 ,  A61K9/4866

Abstract: The present invention relates to a composition comprising an extract of Pseudolysimachion genus plant, and the catalpol derivatives isolated therefrom having anti-inflammatory, anti-allergic and anti-asthmatic activity. The extract of Pseudolysimachion genus plant and the catalpol derivatives isolated therefrom shows potent suppressing effect on elevated IgE, IL-4 and IL-13 levels and eosinophilia in the plasma and BALF, and mucus overproduction in the lung tissues in an OVA-induced asthmatic mouse model. Therefore, it can be used as the therapeutics or functional health food for treating and preventing inflammatory, allergic and asthmatic disease.

公开(公告)号：US20120067636A1

公开(公告)日：2012-03-22

申请号：US13233851

申请日：2011-09-15

Applicant: Jin Gu KIM ,  Mi Jin KIM ,  Young Ho KIM ,  Seung Wook PARK ,  Hee Kon LEE ,  Young Do KWEON

Inventor： Jin Gu KIM ,  Mi Jin KIM ,  Young Ho KIM ,  Seung Wook PARK ,  Hee Kon LEE ,  Young Do KWEON

IPC: H05K1/16 ,  H05K1/11

CPC classification number: H05K3/4694 ,  H01L23/49816 ,  H01L23/49822 ,  H01L23/49827 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2924/00014 ,  H01L2924/15311 ,  H05K1/112 ,  H05K3/3436 ,  H05K2203/041 ,  H01L2224/0401

Abstract: Disclosed herein is an interposer-embedded printed circuit board, including: a substrate including a cavity formed in one side thereof and having a predetermined height in a thickness direction of the substrate; an interposer disposed in the cavity and including a wiring region and an insulating region; and a circuit layer formed in the substrate and including a connection pattern connected with one side of the wiring region. The interposer-embedded printed circuit board is advantageous in that an interposer is embedded in a substrate, so that the thickness of a semiconductor package can be reduced, thereby keeping up with the trend of slimming the semiconductor package.

Abstract translation: 本发明公开了一种嵌入式嵌入式印刷电路板，包括：基板，其具有在其一面形成并在基板的厚度方向上具有预定高度的空腔; 插入器，其设置在所述空腔中并且包括布线区域和绝缘区域; 以及形成在所述基板中并且包括与所述布线区域的一侧连接的连接图案的电路层。 嵌入式嵌入式印刷电路板的优点在于，嵌入在衬底中，从而可以减小半导体封装的厚度，从而跟上半导体封装变窄的趋势。

公开(公告)号：US20100079662A1

公开(公告)日：2010-04-01

申请号：US12630081

申请日：2009-12-03

Applicant: Bong Ki MHEEN ,  Mi Jin KIM ,  Young Joo SONG

Inventor： Bong Ki MHEEN ,  Mi Jin KIM ,  Young Joo SONG

IPC: H04N5/225

CPC classification number: H04N5/3597 ,  H01L27/14603 ,  H01L27/14609 ,  H04N5/357 ,  H04N5/361 ,  H04N5/3745

Abstract: Provided is a 4-transistor CMOS image in which a driving condition or a pixel structure is changed so that a transfer transistor in a pixel operates in a pinch-off condition during reset and transfer operations in order to reduce dark current and fixed-pattern noise caused by a change in an operation condition of the transfer transistor and inter-pixel characteristic discrepancy. The image sensor includes a photosensitive pixel including a transfer transistor for transferring photon-induced charges created in a photodiode; and a voltage control unit for controlling a turn-on voltage applied to a gate of the transfer transistor to be lower than a floating diffusion node voltage plus the threshold voltage of the transfer transistor during a partial or entire section of a turn-on section of the transfer transistor such that the transfer transistor operates in a pseudo pinch-off mode.

Abstract translation: 提供了一种4晶体管CMOS图像，其中改变驱动条件或像素结构，使得像素在复位和传输操作期间在夹断状态下工作，以减少暗电流和固定图案噪声 由转移晶体管的操作条件的变化和像素间特性差异引起。 图像传感器包括光敏像素，其包括用于传输在光电二极管中产生的光子感应电荷的转移晶体管; 以及电压控制单元，用于在所述转移晶体管的导通部分的部分或整个部分期间将施加到所述转移晶体管的栅极的导通电压控制为低于浮置扩散节点电压加上所述转移晶体管的阈值电压 转移晶体管使得转移晶体管以伪夹断模式工作。

公开(公告)号：US20100079178A1

公开(公告)日：2010-04-01

申请号：US12630071

申请日：2009-12-03

Applicant: Bong Ki MHEEN ,  Mi Jin KIM ,  Young Joo SONG

Inventor： Bong Ki MHEEN ,  Mi Jin KIM ,  Young Joo SONG

IPC: H03B1/00

CPC classification number: H04N5/3597 ,  H01L27/14603 ,  H01L27/14609 ,  H04N5/357 ,  H04N5/361 ,  H04N5/3745

Abstract: Provided is a 4-transistor CMOS image in which a driving condition or a pixel structure is changed so that a transfer transistor in a pixel operates in a pinch-off condition during reset and transfer operations in order to reduce dark current and fixed-pattern noise caused by a change in an operation condition of the transfer transistor and inter-pixel characteristic discrepancy. The image sensor includes a photosensitive pixel including a transfer transistor for transferring photon-induced charges created in a photodiode; and a voltage control unit for controlling a turn-on voltage applied to a gate of the transfer transistor to be lower than a floating diffusion node voltage plus the threshold voltage of the transfer transistor during a partial or entire section of a turn-on section of the transfer transistor such that the transfer transistor operates in a pseudo pinch-off mode.

公开(公告)号：US20090203189A1

公开(公告)日：2009-08-13

申请号：US12134760

申请日：2008-06-06

Applicant: Dong-woon Shin ,  Tai-su Park ,  Si-Young Choi ,  Soo-Jin Hong ,  Mi-Jin Kim

Inventor： Dong-woon Shin ,  Tai-su Park ,  Si-Young Choi ,  Soo-Jin Hong ,  Mi-Jin Kim

IPC: H01L21/76

CPC classification number: H01L21/823481 ,  H01L21/76229 ,  H01L21/823456 ,  H01L27/0921 ,  H01L27/105

Abstract: A semiconductor device is manufactured by forming trenches in a substrate and selectively performing Plasma Ion Immersion Implantation and Deposition (PIIID) on a subset of the trenches in the substrate. The PIIID may be performed on only a portion of a surface of at least one of the trenches in the substrate. Semiconductor devices can include a semiconductor substrate having first, second and third trenches therein, and an oxide liner layer that fully lines the first trenches, that does not line the second trenches and that partially lines the third trenches.

Abstract translation: 通过在衬底中形成沟槽并且在衬底中的沟槽的子集上选择性地执行等离子体离子注入植入和沉积（PIIID）来制造半导体器件。 PIIID可以仅在衬底中的至少一个沟槽的表面的一部分上进行。 半导体器件可以包括其中具有第一，第二和第三沟槽的半导体衬底以及不对第一沟槽进行线条化的氧化物衬层，其不线性化第二沟槽并且部分地对第三沟槽进行排列。

公开(公告)号：US20090203188A1

公开(公告)日：2009-08-13

申请号：US12133772

申请日：2008-06-05

Applicant: Dong-woon Shin ,  Tai-su Park ,  Si-young Choi ,  Soo-jin Hong ,  Mi-jin Kim

Inventor： Dong-woon Shin ,  Tai-su Park ,  Si-young Choi ,  Soo-jin Hong ,  Mi-jin Kim

IPC: H01L21/76

CPC classification number: H01L21/823481 ,  H01L21/76229 ,  H01L21/823456 ,  H01L27/0921 ,  H01L27/105

Abstract: Methods of manufacturing a semiconductor device, which can reduce hot electron induced punchthrough (HEIP) and/or improve the operating characteristics of the device include selectively forming an oxynitride layer in a device isolation layer according to the characteristics of transistors isolated by the device isolation layer. The methods include forming first trenches and second trenches on a substrate, forming an oxide layer on the surfaces of the first trenches and the second trenches, selectively forming an oxynitride layer on the second trenches by using plasma ion immersion implantation (PIII), and forming a buried insulating layer in the first trenches and the second trenches. The buried insulating layer may be planarized to form a first device isolation layer in the first trenches and a second device isolation layer in the second trenches.

Abstract translation: 可以减少热电子穿透（HEIP）和/或改善器件的工作特性的半导体器件的制造方法包括根据器件隔离层隔离的晶体管的特性选择性地在器件隔离层中形成氧氮化物层 。 所述方法包括在衬底上形成第一沟槽和第二沟槽，在第一沟槽和第二沟槽的表面上形成氧化物层，通过使用等离子体离子浸没注入（PIII）在第二沟槽上选择性地形成氧氮化物层，并形成 在第一沟槽和第二沟槽中的掩埋绝缘层。 掩埋绝缘层可以被平坦化以在第一沟槽中形成第一器件隔离层，在第二沟槽中形成第二器件隔离层。

公开(公告)号：US20080093534A1

公开(公告)日：2008-04-24

申请号：US11866698

申请日：2007-10-03

Applicant: Bong Ki Mheen ,  Min Hyung Cho ,  Mi Jin Kim ,  Young Joo Song

Inventor： Bong Ki Mheen ,  Min Hyung Cho ,  Mi Jin Kim ,  Young Joo Song

IPC: G01J1/44

CPC classification number: H04N5/3745 ,  H01L27/14603 ,  H01L27/14609 ,  H04N5/361

Abstract: Provided are an image sensor and a driving circuit of a transfer transistor for charge transfer in a light receiving unit realized in the image sensor, in which a pixel is insufficiently reset to be always operated in a pseudo pinch-off condition, unlike a conventional reset method in which a pixel structure of a 4-transistor CMOS image sensor or its analogue has to be depleted, thereby reducing a reset voltage of a photodiode and reducing a dark current and fixed pattern noise generated due to discordance of characteristics between pixels.The image sensor includes a conversion module for lowering a turn-on voltage of a signal or changing its waveform, a module for providing a negative voltage if necessary, and at least one module for limiting the slope of an output signal, and the characteristics of the image sensor are improved by operating the transfer transistor in the pseudo pinch-off mode.

Abstract translation: 提供了一种在图像传感器中实现的光接收单元中的用于电荷转移的转移晶体管的图像传感器和驱动电路，其中像素不充分复位以始终以伪夹断状态操作，与常规复位不同 必须耗尽4晶体管CMOS图像传感器或其类似物的像素结构的方法，从而减少光电二极管的复位电压并减少由于像素之间的特性不一致而产生的暗电流和固定图案噪声。 图像传感器包括用于降低信号的导通电压或改变其波形的转换模块，如果需要的用于提供负电压的模块，以及用于限制输出信号的斜率的至少一个模块，以及 通过在伪夹断模式中操作传输晶体管来改善图像传感器。