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31.发明授权Systems and methods for forming tantalum oxide layers and tantalum precursor compounds 失效用于形成氧化钽层和钽前体化合物的系统和方法公开(公告)号：US07030042B2
公开(公告)日：2006-04-18
申请号：US10230243
申请日：2002-08-28
IPC分类号： H01L21/31 , H01L21/496
CPC分类号： H01L21/02183 , C07F9/005 , C23C16/405 , C23C16/45553 , H01L21/02205 , H01L21/02271 , H01L21/0228 , H01L21/31604 , H01L21/31683 , H01L28/40
摘要： A method of forming (and apparatus for forming) a tantalum oxide layer on a substrate, particularly a semiconductor substrate or substrate assembly, using a vapor deposition process and a tantalum precursor compound that includes alkoxide ligands, for example.
摘要翻译： 例如，使用气相沉积法和包括醇盐配体的钽前体化合物在基板，特别是半导体基板或基板组件上形成（以及用于形成）氧化钽层的方法。
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公开(公告)号：US08741688B2
公开(公告)日：2014-06-03
申请号：US13556751
申请日：2012-07-24
IPC分类号： H01L21/00
CPC分类号： H01L21/02568 , C23C16/305 , C23C16/45525 , H01L21/0237 , H01L21/0256 , H01L21/02562 , H01L21/02614 , H01L21/0262 , H01L31/0324
摘要： Accordingly, a method of forming a metal chalcogenide material may comprise introducing at least one metal precursor and at least one chalcogen precursor into a chamber comprising a substrate, the at least one metal precursor comprising an amine or imine compound of an alkali metal, an alkaline earth metal, a transition metal, a post-transition metal, or a metalloid, and the at least one chalcogen precursor comprising a hydride, alkyl, or aryl compound of sulfur, selenium, or tellurium. The at least one metal precursor and the at least one chalcogen precursor may be reacted to form a metal chalcogenide material over the substrate. A method of forming a metal telluride material, a method of forming a semiconductor device structure, and a semiconductor device structure are also described.
摘要翻译： 因此，形成金属硫族化物材料的方法可以包括将至少一种金属前体和至少一种硫属前体引入包含基底的室中，所述至少一种金属前体包含碱金属的胺或亚胺化合物，碱 土金属，过渡金属，后过渡金属或准金属，以及所述至少一种硫族元素前体包含硫，硒或碲的氢化物，烷基或芳基化合物。 所述至少一种金属前体和所述至少一种硫属前体可以反应以在所述基底上形成金属硫族化物材料。 还描述了形成金属碲化物材料的方法，形成半导体器件结构的方法和半导体器件结构。
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33.发明授权Semiconductor structures including polymer material permeated with metal oxide 有权包括透过金属氧化物的聚合物材料的半导体结构公开(公告)号：US08669645B2
公开(公告)日：2014-03-11
申请号：US13335107
申请日：2011-12-22
IPC分类号： H01L23/58
CPC分类号： H01L21/0271 , B82Y10/00 , B82Y40/00 , C08L53/00 , C08L53/005 , C09D153/00 , C09D153/005 , G03F7/0002 , H01L21/02323 , H01L21/28 , H01L29/06 , Y10S438/947 , Y10S977/888 , Y10S977/89 , C08L2666/02
摘要： Methods of forming metal oxide structures and methods of forming metal oxide patterns on a substrate using a block copolymer system formulated for self-assembly. A block copolymer at least within a trench in the substrate and including at least one soluble block and at least one insoluble block may be annealed to form a self-assembled pattern including a plurality of repeating units of the at least one soluble block laterally aligned with the trench and positioned within a matrix of the at least one insoluble block. The self-assembled pattern may be exposed to a metal oxide precursor that impregnates the at least one soluble block. The metal oxide precursor may be oxidized to form a metal oxide. The self-assembled pattern may be removed to form a pattern of metal oxide lines on the substrate surface. Semiconductor device structures are also described.
摘要翻译： 使用配制用于自组装的嵌段共聚物体系形成金属氧化物结构的方法和在基材上形成金属氧化物图案的方法。 至少在衬底中的沟槽内并且包括至少一个可溶性嵌段和至少一个不溶性嵌段的嵌段共聚物可以被退火以形成自组装图案，其包括多个与所述至少一个可溶嵌段的重复单元横向对准 并且定位在所述至少一个不溶性块的基质内。 自组装图案可以暴露于浸渍至少一个可溶性嵌段的金属氧化物前体。 金属氧化物前体可以被氧化以形成金属氧化物。 可以去除自组装图案以在衬底表面上形成金属氧化物线的图案。 还描述了半导体器件结构。
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公开(公告)号：US08541765B2
公开(公告)日：2013-09-24
申请号：US12787018
申请日：2010-05-25
申请人： Eugene P. Marsh , Timothy A. Quick
发明人： Eugene P. Marsh , Timothy A. Quick
IPC分类号： H01L47/00
CPC分类号： H01L45/1608 , H01L27/101 , H01L27/2463 , H01L45/04 , H01L45/06 , H01L45/085 , H01L45/124 , H01L45/141 , H01L45/142 , H01L45/143 , H01L45/144 , H01L45/146 , H01L45/148 , H01L45/1616 , H01L45/1691
摘要： Resistance variable memory cell structures and methods are described herein. One or more resistance variable memory cell structures include a first electrode common to a first and a second resistance variable memory cell, a first vertically oriented resistance variable material having an arcuate top surface in contact with a second electrode and a non-arcuate bottom surface in contact with the first electrode; and a second vertically oriented resistance variable material having an arcuate top surface in contact with a third electrode and a non-arcuate bottom surface in contact with the first electrode.
摘要翻译： 本文描述了电阻变量存储单元结构和方法。 一个或多个电阻可变存储单元结构包括与第一和第二电阻可变存储单元共用的第一电极，第一垂直取向的电阻变化材料，其具有与第二电极接触的弓形顶表面和非弧形底表面 与第一电极接触; 以及第二垂直取向的电阻变化材料，其具有与第三电极接触的弓形顶表面和与第一电极接触的非弧形底表面。
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35.发明申请MEMORY CELLS, SEMICONDUCTOR DEVICES INCLUDING SUCH CELLS, AND METHODS OF FABRICATION 有权记忆细胞，包括这种细胞的半导体器件，以及制造方法公开(公告)号：US20130128649A1
公开(公告)日：2013-05-23
申请号：US13298987
申请日：2011-11-17
CPC分类号： H01L45/085 , H01L45/1233 , H01L45/141 , H01L45/1608 , H01L45/1616
摘要： Memory cells are disclosed, which cells include a cell material and an ion-source material over the cell material. A discontinuous interfacial material is included between the cell material and the ion-source material. Also disclosed are fabrication methods and semiconductor devices including the disclosed memory cells.
摘要翻译： 公开了存储器单元，其中电池包括细胞材料和细胞材料上的离子源材料。 细胞材料和离子源材料之间包含不连续的界面材料。 还公开了包括所公开的存储单元的制造方法和半导体器件。
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36.发明申请SEMICONDUCTOR STRUCTURES INCLUDING POLYMER MATERIAL PERMEATED WITH METAL OXIDE 有权半导体结构包括用金属氧化物渗透的聚合物材料公开(公告)号：US20120133017A1
公开(公告)日：2012-05-31
申请号：US13335107
申请日：2011-12-22
IPC分类号： H01L29/06
CPC分类号： H01L21/0271 , B82Y10/00 , B82Y40/00 , C08L53/00 , C08L53/005 , C09D153/00 , C09D153/005 , G03F7/0002 , H01L21/02323 , H01L21/28 , H01L29/06 , Y10S438/947 , Y10S977/888 , Y10S977/89 , C08L2666/02
摘要： Methods of forming metal oxide structures and methods of forming metal oxide patterns on a substrate using a block copolymer system formulated for self-assembly. A block copolymer at least within a trench in the substrate and including at least one soluble block and at least one insoluble block may be annealed to form a self-assembled pattern including a plurality of repeating units of the at least one soluble block laterally aligned with the trench and positioned within a matrix of the at least one insoluble block. The self-assembled pattern may be exposed to a metal oxide precursor that impregnates the at least one soluble block. The metal oxide precursor may be oxidized to form a metal oxide. The self-assembled pattern may be removed to form a pattern of metal oxide lines on the substrate surface. Semiconductor device structures are also described.
摘要翻译： 使用配制用于自组装的嵌段共聚物体系形成金属氧化物结构的方法和在基材上形成金属氧化物图案的方法。 至少在衬底中的沟槽内并且包括至少一个可溶性嵌段和至少一个不溶性嵌段的嵌段共聚物可以被退火以形成自组装图案，其包括多个与所述至少一个可溶嵌段的重复单元横向对准 并且定位在所述至少一个不溶性块的基质内。 自组装图案可以暴露于浸渍至少一个可溶性嵌段的金属氧化物前体。 金属氧化物前体可以被氧化以形成金属氧化物。 可以去除自组装图案以在衬底表面上形成金属氧化物线的图案。 还描述了半导体器件结构。
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37.发明授权Atomic layer deposition systems and methods including metal beta-diketiminate compounds 有权原子层沉积系统和方法，包括金属β-二酮酸酯化合物公开(公告)号：US08188464B2
公开(公告)日：2012-05-29
申请号：US12751283
申请日：2010-03-31
申请人： Timothy A. Quick
发明人： Timothy A. Quick
IPC分类号： H01L51/00
CPC分类号： H01L21/0228 , C23C16/409 , C23C16/45531 , C23C16/45553 , H01L21/02175 , H01L21/02197 , H01L21/3141 , H01L21/31691
摘要： The present invention provides atomic layer deposition systems and methods that include metal compounds with at least one β-diketiminate ligand. Such systems and methods can be useful for depositing metal-containing layers on substrates.
摘要翻译： 本发明提供了原子层沉积系统和方法，其包括具有至少一个β-二亚胺化物配体的金属化合物。 这种系统和方法可用于在基底上沉积含金属层。
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公开(公告)号：US20120021587A1
公开(公告)日：2012-01-26
申请号：US13249544
申请日：2011-09-30
CPC分类号： H01L21/3141 , C23C16/40 , C23C16/401 , C23C16/45553 , H01L21/02164 , H01L21/02181 , H01L21/02219 , H01L21/0228 , H01L21/31612 , H01L21/31616 , H01L21/31645 , H01L28/40
摘要： A method of forming (and apparatus for forming) a metal oxide layer, preferably a dielectric layer, on a substrate, particularly a semiconductor substrate or substrate assembly, using a vapor deposition process and ozone with one or more metal organo-amine precursor compounds.
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公开(公告)号：US20120018693A1
公开(公告)日：2012-01-26
申请号：US12843695
申请日：2010-07-26
CPC分类号： H01L45/1616 , H01L45/06 , H01L45/1233 , H01L45/144 , H01L45/148
摘要： Confined resistance variable memory cell structures and methods are described herein. One or more methods of forming a confined resistance variable memory cell structure includes forming a via in a memory cell structure and forming a resistance variable material in the via by performing a process that includes providing a germanium amidinate precursor and a first reactant to a process chamber having the memory cell structure therein and providing an antimony ethoxide precursor and a second reactant to the process chamber subsequent to removing excess germanium.
摘要翻译： 本文描述了限制性电阻变量存储单元结构和方法。 形成限制电阻可变存储单元结构的一种或多种方法包括在存储单元结构中形成通孔，并在通孔中形成电阻可变材料，该方法包括：向处理室提供锗酰脒前体和第一反应物 在其中具有记忆单元结构并且在除去过量的锗之后向处理室提供锑乙醇前体和第二反应物。
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40.发明申请Beta-Diketiminate Ligand Sources and Metal-Containing Compounds Thereof, and Systems and Methods Including Same 失效β-Diketiminate配位体和含金属化合物，以及包括其的系统和方法公开(公告)号：US20110301383A1
公开(公告)日：2011-12-08
申请号：US13209747
申请日：2011-08-15
申请人： Dan Millward , Timothy A. Quick
发明人： Dan Millward , Timothy A. Quick
IPC分类号： C07C221/00 , C07C211/09
CPC分类号： C23C16/40 , C07C251/12 , C23C16/18 , H01L21/28556
摘要： The present invention provides metal-containing compounds that include at least one β-diketiminate ligand, and methods of making and using the same. In certain embodiments, the metal-containing compounds include at least one β-diketiminate ligand with at least one fluorine-containing organic group as a substituent. In other certain embodiments, the metal-containing compounds include at least one β-diketiminate ligand with at least one aliphatic group as a substituent selected to have greater degrees of freedom than the corresponding substituent in the β-diketiminate ligands of certain metal-containing compounds known in the art. The compounds can be used to deposit metal-containing layers using vapor deposition methods. Vapor deposition systems including the compounds are also provided. Sources for β-diketiminate ligands are also provided.
摘要翻译： 本发明提供含有金属的化合物，其包含至少一种β-二亚胺化物配体，以及制备和使用它们的方法。 在某些实施方案中，含金属的化合物包括至少一种具有至少一个含氟有机基团作为取代基的重氮基配位体。 在其它某些实施方案中，含金属化合物包括至少一种具有至少一个脂族基团作为取代基的重氮配位体配位体，所述配位体选择为具有比某些金属化合物的重氮化物配体中的相应取代基更大的自由度， 含有本领域已知的化合物。 该化合物可用于使用气相沉积方法沉积含金属层。 还提供了包括这些化合物的蒸镀系统。 还提供了二联体配位体的衍生物。
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