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    Apparatus and methods for spacer deposition and selective removal in an advanced patterning process
    31.
    发明授权
    Apparatus and methods for spacer deposition and selective removal in an advanced patterning process 有权
    在先进的图案化工艺中用于间隔物沉积和选择性去除的装置和方法

    公开(公告)号：US09484202B1

    公开(公告)日：2016-11-01

    申请号：US14729932

    申请日：2015-06-03

    Applicant: Applied Materials, Inc.

    Inventor： Jie Zhou ,  Chentsau Ying ,  Shambhu N. Roy ,  Srinivas D. Nemani ,  Jingjing Liu ,  Ellie Y. Yieh

    IPC: H01L21/302 ,  H01L21/033 ,  H01L21/311

    CPC classification number: H01L21/311 ,  H01L21/0337

    Abstract: Embodiments herein provide apparatus and methods for performing a deposition and a patterning process on a spacer layer with good profile control in multiple patterning processes. In one embodiment, a method for depositing and patterning a spacer layer during a multiple patterning process includes conformally forming a spacer layer on an outer surface of a patterned structure disposed on a substrate, wherein the patterned structure has a first group of openings defined therebetween, selectively treating a first portion of the spacer layer formed on the substrate without treating a second portion of the spacer layer, and selectively removing the treated first portion of the spacer layer.

    Abstract translation: 本文的实施例提供了用于在多个图案化工艺中对具有良好轮廓控制的间隔层执行沉积和图案化工艺的装置和方法。 在一个实施例中，在多次图案化工艺期间用于沉积和图案化间隔层的方法包括在设置在衬底上的图案化结构的外表面上共形形成间隔层，其中图案化结构具有限定在其间的第一组开口， 选择性地处理形成在衬底上的间隔层的第一部分，而不处理间隔层的第二部分，并且选择性地去除间隔层的经处理的第一部分。

    METHOD FOR MATERIAL REMOVAL IN DRY ETCH REACTOR
    33.
    发明申请
    METHOD FOR MATERIAL REMOVAL IN DRY ETCH REACTOR 审中-公开
    干蚀刻反应器材料去除方法

    公开(公告)号：US20150214066A1

    公开(公告)日：2015-07-30

    申请号：US14164679

    申请日：2014-01-27

    Applicant: Applied Materials, Inc.

    Inventor： Olivier Luere ,  Srinivas D. Nemani ,  Sean S. Kang

    IPC: H01L21/311 ,  H01L21/033

    CPC classification number: H01L21/02063 ,  H01J37/32082 ,  H01J37/32192 ,  H01J37/32357 ,  H01L21/0212 ,  H01L21/02274 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/32136 ,  H01L21/76802 ,  H01L2221/1063

    Abstract: Embodiments of the technology include a semiconductor patterning method. The method may include forming a layer of masking material on regions of dielectric material above a semiconductor substrate. The method may include forming a trench through the masking material. This transformation may expose at least a portion of the dielectric material. The method may include forming a protective layer over the exposed portion of the dielectric material. The method may involve removing the masking material from the semiconductor substrate.

    Abstract translation: 该技术的实施例包括半导体图案化方法。 该方法可以包括在半导体衬底上方的电介质材料的区域上形成掩模材料层。 该方法可以包括通过掩模材料形成沟槽。 该变换可以暴露电介质材料的至少一部分。 该方法可以包括在介电材料的暴露部分上形成保护层。 该方法可以包括从半导体衬底去除掩模材料。

    Method of patterning a low-k dielectric film
    36.
    发明授权
    Method of patterning a low-k dielectric film 有权
    图案化低k电介质膜的方法

    公开(公告)号：US08802572B2

    公开(公告)日：2014-08-12

    申请号：US13922543

    申请日：2013-06-20

    Applicant: Applied Materials, Inc.

    Inventor： Srinivas D. Nemani ,  Jeremiah T. Pender ,  Qingjun Zhou ,  Dmitry Lubomirsky ,  Sergey G. Belostotskiy

    IPC: H01L21/033 ,  H01L21/311

    CPC classification number: H01L21/308 ,  H01J37/32357 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/31144

    Abstract: Methods of patterning low-k dielectric films are described. In an example, a method of patterning a low-k dielectric film involves forming and patterning a mask layer above a low-k dielectric layer. The low-k dielectric layer is disposed above a substrate. The method also involves modifying exposed portions of the low-k dielectric layer with a plasma process. The method also involves, in the same operation, removing, with a remote plasma process, the modified portions of the low-k dielectric layer selective to the mask layer and unmodified portions of the low-k dielectric layer.

    Abstract translation: 描述了低k介电膜图案的方法。 在一个实例中，图案化低k电介质膜的方法包括在低k电介质层之上形成和图案化掩模层。 低k电介质层设置在衬底之上。 该方法还涉及用等离子体处理来修饰低k电介质层的暴露部分。 该方法在相同的操作中还涉及用远程等离子体处理去除低k电介质层的修改部分对掩模层和低k电介质层的未修改部分选择。

    DIRECTIONAL SELECTIVE FILL USING HIGH DENSITY PLASMA
    40.
    发明公开
    DIRECTIONAL SELECTIVE FILL USING HIGH DENSITY PLASMA 审中-公开

    公开(公告)号：US20240234131A1

    公开(公告)日：2024-07-11

    申请号：US18584540

    申请日：2024-02-22

    Applicant: Applied Materials, Inc.

    Inventor： Purvam Dineshbhai Modi ,  Bhargav S. Citla ,  Srinivas D. Nemani ,  Ellie Y. Yieh

    IPC: H01L21/02 ,  H01J37/32 ,  H01L21/3065 ,  H01L21/311

    CPC classification number: H01L21/02274 ,  H01J37/32146 ,  H01L21/3065 ,  H01L21/31116 ,  H01J2237/332 ,  H01J2237/334

    Abstract: Exemplary processing methods may include providing a silicon-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be housed in the processing region. The substrate may define a feature. The methods may include forming plasma effluents of the silicon-containing precursor. The methods may include depositing a silicon-containing material on the substrate. The methods may include providing an oxygen-containing precursor to the processing region, forming plasma effluents of the oxygen-containing precursor, and contacting the silicon-containing material with the plasma effluents of the oxygen-containing precursor to form a silicon-and-oxygen-containing material. The methods may include providing a fluorine-containing precursor to the processing region, forming plasma effluents of the fluorine-containing precursor, and etching the silicon-and-oxygen-containing material from a top, a sidewall, or both of the feature with the plasma effluents of the fluorine-containing precursor.

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