公开(公告)号：US20160126134A1

公开(公告)日：2016-05-05

申请号：US14527692

申请日：2014-10-29

Applicant: APPLIED Materials, Inc.

Inventor： Roey Shaviv ,  Ismail T. Emesh

IPC: H01L21/768 ,  C25D7/12

CPC classification number: H01L21/76873 ,  C23C14/5846 ,  C23C18/1653 ,  C25D5/34 ,  C25D7/123 ,  C25D17/001 ,  H01L21/02068 ,  H01L21/6723 ,  H01L21/76843 ,  H01L21/76861 ,  H01L2221/1089

Abstract: An electrochemical deposition plating tool in accordance with one embodiment of the present disclosure includes one or more electrochemical deposition chambers and a hydrogen radical H* generation chamber.

Abstract translation: 根据本公开的一个实施方案的电化学沉积电镀工具包括一个或多个电化学沉积室和氢根H *生成室。

公开(公告)号：US20150345045A1

公开(公告)日：2015-12-03

申请号：US14637316

申请日：2015-03-03

Applicant: APPLIED Materials, Inc.

Inventor： Roey Shaviv ,  Ismail T. Emesh ,  Dimitrios Argyris ,  Serdar Aksu

IPC: C25D7/12 ,  H01L23/532 ,  H01L21/768 ,  C25D3/48 ,  C25D3/12 ,  C25D3/38 ,  C25D3/46 ,  H01L23/528 ,  H01L21/288

CPC classification number: C25D7/123 ,  C25D3/02 ,  C25D3/12 ,  C25D3/38 ,  C25D3/46 ,  C25D3/48 ,  H01L21/2885 ,  H01L21/76843 ,  H01L21/76873 ,  H01L21/76877 ,  H01L21/76879 ,  H01L21/76882 ,  H01L23/528 ,  H01L23/53209 ,  H01L23/53238 ,  H01L23/53252 ,  H01L2221/1089 ,  H01L2924/0002 ,  H01L2924/00

Abstract: In accordance with one embodiment of the present disclosure, a method for depositing metal on a reactive metal film on a workpiece includes electrochemically depositing a metallization layer on a seed layer formed on a workpiece using a plating electrolyte having at least one plating metal ion, a pH range of about 1 to about 6, and applying a cathodic potential in the range of about −0.5 V to about −4 V. The workpiece includes a barrier layer disposed between the seed layer and a dielectric surface of the workpiece, the barrier layer including a first metal having a standard electrode potential more negative than 0 V and the seed layer including a second metal having a standard electrode potential more positive than 0 V.

Abstract translation: 根据本公开的一个实施例，用于在工件上的反应性金属膜上沉积金属的方法包括使用具有至少一个电镀金属离子的电镀电解质在形成在工件上的籽晶层上电化学沉积金属化层， pH范围为约1至约6，并施加约-0.5V至约-4V范围内的阴极电势。工件包括设置在种子层和工件的电介质表面之间的阻挡层，阻挡层 包括具有比0V更负的标准电极电势的第一金属，并且晶种层包括具有比0V更正的标准电极电位的第二金属。

公开(公告)号：US12043895B2

公开(公告)日：2024-07-23

申请号：US18072711

申请日：2022-12-01

Applicant: APPLIED MATERIALS, INC.

Inventor： Alexander Lerner ,  Prashanth Kothnur ,  Roey Shaviv ,  Satish Radhakrishnan

IPC: C23C16/455

CPC classification number: C23C16/45565 ,  C23C16/45525 ,  C23C16/4557 ,  C23C16/45574

Abstract: Methods of introducing precursors through a segmented showerhead are provided herein. In some embodiments, a method of introducing precursors through a segmented showerhead having a plurality of gas delivery portions that are fluidly isolated includes heating a first gas delivery portion to a first temperature; and simultaneously heating a second gas delivery portion to a second temperature different than the first temperature, wherein each of the first and second gas delivery portions (i) have a wedge shaped body that defines a plenum, (ii) are coplanar, and (iii) together form a showerhead having a circular shape.

公开(公告)号：US11970775B2

公开(公告)日：2024-04-30

申请号：US16533357

申请日：2019-08-06

Applicant: APPLIED MATERIALS, INC.

Inventor： Prashanth Kothnur ,  Satish Radhakrishnan ,  Alexander Lerner ,  Sergei Klimovich ,  Roey Shaviv

IPC: C23C16/455 ,  B05B1/18 ,  B05B1/20

CPC classification number: C23C16/45548 ,  B05B1/185 ,  B05B1/20

Abstract: Embodiments of a showerhead are described herein. In some embodiments, a showerhead assembly includes: a first gas delivery portion having a first body, a first inlet, and a plurality of first tubes extending from the first body and defining a first plenum, wherein each tube of the plurality of first tubes includes a plurality of first holes; and a second gas delivery portion having a second body, a second inlet, and a plurality of second tubes extending from the second body and defining a second plenum fluidly independent from the first plenum, wherein each tube of the plurality of second tubes includes a plurality of second holes, and wherein the plurality of first tubes are disposed in an alternating pattern with the plurality of second tubes across a width of the showerhead assembly and a heat sink disposed between the plurality of first tubes and the plurality of second tubes.

公开(公告)号：US11538706B2

公开(公告)日：2022-12-27

申请号：US16848645

申请日：2020-04-14

Applicant: Applied Materials, Inc.

Inventor： Alexander N. Lerner ,  Michael P. Karazim ,  Andrew J. Constant ,  Jeffrey A. Brodine ,  Kim Ramkumar Vellore ,  Kevin Moraes ,  Roey Shaviv

IPC: H01L21/68 ,  H01J37/32 ,  H01L21/673 ,  H01L21/677 ,  C23C16/04

Abstract: An alignment module for positioning a mask on a substrate comprises a mask stocker, an alignment stage, and a transfer robot. The mask stocker houses a mask cassette that stores a plurality of masks. The alignment stage is configured to support a carrier and a substrate. The transfer robot is configured to transfer one of the one or more masks from the mask stocker to the alignment stage and position the mask over the substrate. The alignment module may be part of an integrated platform having one or more transfer chambers, a factory interface having a substrate carrier chamber and one or more processing chambers. A carrier may be coupled to a substrate within the substrate carrier chamber and moved between the processing chambers to generate a semiconductor device.

公开(公告)号：US10000860B1

公开(公告)日：2018-06-19

申请号：US15380771

申请日：2016-12-15

Applicant: APPLIED Materials, Inc.

Inventor： Serdar Aksu ,  Jung Gu Lee ,  Bart Sakry ,  Roey Shaviv

IPC: C25D5/18 ,  C25D3/38 ,  C25D7/12 ,  C25D5/34 ,  C25D5/16 ,  C25D17/00

Abstract: A method of electroplating on a workpiece having at least one sub-30 nm feature includes applying a first electrolyte chemistry to the workpiece, the chemistry including a metal cation solute species having a concentration in the range of about 50 mM to about 250 mM and a suppressor resulting in polarization greater than 0.75 V and reaching 0.75 V of polarization at a rate greater than 0.25 V/s, and applying an electric waveform, wherein the electric waveform includes a period of ramping up of current followed by a period of partial ramping down of current.

公开(公告)号：US20180138085A1

公开(公告)日：2018-05-17

申请号：US15349460

申请日：2016-11-11

Applicant: Applied Materials, Inc.

Inventor： Xikun Wang ,  Jianxin Lei ,  Nitin Ingle ,  Roey Shaviv

IPC: H01L21/768 ,  H01L21/3213 ,  H01L23/532 ,  H01L21/321 ,  H01L21/67

CPC classification number: H01L21/76877 ,  H01L21/321 ,  H01L21/32135 ,  H01L21/32136 ,  H01L21/67069 ,  H01L21/76883 ,  H01L23/53209

Abstract: Exemplary methods for removing cobalt material may include flowing a chlorine-containing precursor into a processing region of a semiconductor processing chamber. The methods may include forming a plasma of the chlorine-containing precursor to produce plasma effluents. The methods may also include contacting an exposed region of cobalt with the plasma effluents. The exposed region of cobalt may include an overhang of cobalt on a trench defined on a substrate. The plasma effluents may produce cobalt chloride at the overhang of cobalt. The methods may include flowing a nitrogen-containing precursor into the processing region of the semiconductor processing chamber. The methods may further include contacting the cobalt chloride with the nitrogen-containing precursor. The methods may also include recessing the overhang of cobalt.

公开(公告)号：US09805976B2

公开(公告)日：2017-10-31

申请号：US14991712

申请日：2016-01-08

Applicant: APPLIED Materials, Inc.

Inventor： Roey Shaviv ,  Ismail T. Emesh

IPC: H01L21/768 ,  H01L23/532

CPC classification number: H01L21/76879 ,  H01L21/76843 ,  H01L23/53238

Abstract: In one embodiment of the present disclosure, a method for depositing metal in a feature on a workpiece is provided. The method includes electrochemically depositing a second metal layer on a first metal layer on a workpiece having at least two features of two different sizes in a dielectric layer, wherein the second metal layer is a copper layer and wherein the first metal layer includes a metal selected from the group consisting of cobalt and nickel, wherein the first metal layer completely fills the smallest feature but does not completely fill the largest feature.

公开(公告)号：US09768060B2

公开(公告)日：2017-09-19

申请号：US14527671

申请日：2014-10-29

Applicant: APPLIED Materials, Inc.

Inventor： Roey Shaviv ,  Ismail T. Emesh

IPC: H01L21/768 ,  C25D7/12 ,  C25D5/34 ,  C25D17/00 ,  H01L21/02 ,  H01L21/67

CPC classification number: H01L21/76843 ,  C25D5/34 ,  C25D7/123 ,  C25D17/001 ,  H01L21/02068 ,  H01L21/6723 ,  H01L21/76862 ,  H01L21/76864 ,  H01L21/76873

Abstract: In one embodiment of the present disclosure, a method for electrochemical deposition on a workpiece includes (a) obtaining a workpiece including a feature; (b) depositing a first conductive layer in the feature; (c) moving the workpiece to an integrated electrochemical deposition plating tool configured for hydrogen radical H* surface treatment and electrochemical deposition; (d) treating the first conductive layer using a hydrogen radical H* surface treatment in a treatment chamber of the plating tool to produce a treated first conductive layer; and (e) maintaining the workpiece in the same plating tool and depositing a second conductive layer in the feature on the treated first conductive layer in an electrochemical deposition chamber of the plating tool.

公开(公告)号：US09758896B2

公开(公告)日：2017-09-12

申请号：US14621155

申请日：2015-02-12

Applicant: APPLIED Materials, Inc.

Inventor： Roey Shaviv ,  John Lam ,  Timothy Bochman

IPC: C25D3/12 ,  C25D3/56 ,  C25D5/10 ,  C25D5/18 ,  C25D5/50 ,  C25D5/48 ,  C25D7/12 ,  C25D17/00 ,  H01L21/67 ,  H01L21/677

CPC classification number: C25D17/001 ,  C25D3/12 ,  C25D5/10 ,  C25D5/18 ,  C25D5/50 ,  C25D7/123 ,  H01L21/02074 ,  H01L21/6723 ,  H01L21/67276 ,  H01L21/67769

Abstract: A wafer electroplating system has at least one first electroplating chamber having a first electrolyte containing cobalt ions, and is adapted to electroplate a cobalt film onto a wafer at a first deposition rate. A second electroplating chamber has a second electrolyte containing cobalt ions, and is adapted to electroplate a cobalt film onto the wafer at a second deposition rate faster than the first deposition rate. The first and second electroplating chambers are within an enclosure of a processing system. A robot moves a wafer among the first and second electroplating chambers.