公开(公告)号：US20060051972A1

公开(公告)日：2006-03-09

申请号：US10936156

申请日：2004-09-07

Applicant: Chieh Chen ,  Atul Kumar ,  Yuri Pikovsky ,  Chung Lee

Inventor： Chieh Chen ,  Atul Kumar ,  Yuri Pikovsky ,  Chung Lee

IPC: H01L21/469 ,  C23C16/00

CPC classification number: H01L21/02271 ,  H01L21/02118 ,  H01L21/0212 ,  H01L21/02123 ,  H01L21/02126 ,  H01L21/02131 ,  H01L21/02164 ,  H01L21/022 ,  H01L21/312 ,  H01L21/316 ,  H01L21/76808 ,  H01L21/76811 ,  H01L21/76835 ,  Y10T29/41

Abstract: A method of forming a hybrid inorganic/organic dielectric layer on a substrate for use in an integrated circuit is provided, wherein the method includes forming a first dielectric layer on the substrate via chemical vapor deposition, and forming a second dielectric layer on the first dielectric layer via chemical vapor deposition, wherein one of the first dielectric layer and the second dielectric layer is formed from an organic dielectric material, and wherein the other of the first dielectric layer and the second dielectric layer is formed from an inorganic dielectric material.

Abstract translation: 提供了一种在用于集成电路的衬底上形成杂化无机/有机电介质层的方法，其中所述方法包括通过化学气相沉积在衬底上形成第一电介质层，并在第一电介质上形成第二电介质层 层，其中所述第一介电层和所述第二介电层中的一个由有机介电材料形成，并且其中所述第一介电层和所述第二介电层中的另一个由无机介电材料形成。

公开(公告)号：US20050221606A1

公开(公告)日：2005-10-06

申请号：US10815994

申请日：2004-03-31

Applicant: Chung Lee ,  Atul Kumar

Inventor： Chung Lee ,  Atul Kumar

IPC: B05D5/12 ,  H01L21/4763 ,  H01L21/768

CPC classification number: H01L21/76825 ,  H01L21/76807 ,  H01L21/76826 ,  H01L21/76828 ,  H01L21/76829 ,  H01L21/76832

Abstract: A method of forming an electrically conductive element in an integrated circuit is disclosed. The method includes depositing a composite polymer dielectric film onto a silicon-containing substrate, wherein the composite polymer dielectric film includes a silane-containing adhesion promoter layer formed on the silicon-containing substrate, and a low dielectric constant polymer layer formed on the adhesion promoter layer, depositing a silane-containing hard mask layer onto the composite polymer dielectric film, exposing the adhesion promoter layer and the hard mask layer to a free radical-generating energy source to chemically bond the adhesion promoter layer to the underlying silicon-containing substrate and to the low dielectric constant polymer layer, and to chemically bond the composite polymer dielectric film to the hard mask layer, etching an etched feature in the hard mask layer and the composite polymer dielectric film, and depositing an electrically conductive material in the etched feature.

Abstract translation: 公开了一种在集成电路中形成导电元件的方法。 该方法包括将复合聚合物电介质膜沉积到含硅衬底上，其中复合聚合物电介质膜包括在含硅衬底上形成的含硅烷的粘合促进剂层，以及形成在粘合促进剂上的低介电常数聚合物层 将含硅烷的硬掩模层沉积到复合聚合物电介质膜上，将粘附促进剂层和硬掩模层暴露于自由基产生能量源以将粘附促进剂层化学键合到下面的含硅基材上;以及 到低介电常数聚合物层，并且将复合聚合物电介质膜化学键合到硬掩模层，蚀刻硬掩模层和复合聚合物电介质膜中的蚀刻特征，以及在蚀刻特征中沉积导电材料。

公开(公告)号：US20050158454A1

公开(公告)日：2005-07-21

申请号：US11071668

申请日：2005-03-02

Applicant: Chung Lee ,  Atul Kumar ,  Chieh Chen ,  Yuri Pikovsky

Inventor： Chung Lee ,  Atul Kumar ,  Chieh Chen ,  Yuri Pikovsky

IPC: B05D3/02 ,  B05D7/24 ,  B29C71/02 ,  C08G61/02 ,  C08J5/18 ,  H01L21/312 ,  B05D5/06

CPC classification number: B29C71/02 ,  B05D1/60 ,  B05D3/0254 ,  B29C2071/022 ,  B29C2071/025 ,  B29C2071/027 ,  C08G61/02 ,  C08G61/025 ,  C08G2261/3424 ,  C08J5/18 ,  H01L21/0212 ,  H01L21/3127

Abstract: A method of forming an organic light-emitting display on a substrate is disclosed, wherein the method includes forming a thin film transistor portion of the device on the substrate, wherein the thin film transistor portion includes control circuitry having an array of thin film transistors; and forming a light-emitting portion of the device over the thin film transistor portion, wherein the light-emitting portion includes an organic light-emitting layer, an electrode layer in electrical communication with the organic light-emitting layer, a polymer barrier layer disposed between the organic light-emitting layer and the electrode, and at least one other passive polymer layer, wherein the barrier layer and at least one other passive polymer layer are formed from a same polymer material.

Abstract translation: 公开了一种在衬底上形成有机发光显示器的方法，其中该方法包括在衬底上形成器件的薄膜晶体管部分，其中薄膜晶体管部分包括具有薄膜晶体管阵列的控制电路; 以及在所述薄膜晶体管部分上形成所述器件的发光部分，其中所述发光部分包括有机发光层，与所述有机发光层电连通的电极层，设置有聚合物阻挡层 在有机发光层和电极之间以及至少一个其它被动聚合物层，其中阻挡层和至少一个其它被动聚合物层由相同的聚合物材料形成。

公开(公告)号：US20050000435A1

公开(公告)日：2005-01-06

申请号：US10900878

申请日：2004-07-27

Applicant: Chung Lee ,  Atul Kumar ,  Chieh Chen

Inventor： Chung Lee ,  Atul Kumar ,  Chieh Chen

IPC: B01J19/12 ,  B01J19/18 ,  B05D1/00 ,  B05D3/02 ,  B05D3/06 ,  B05D7/24 ,  B29C71/02 ,  C08G61/02 ,  C08J5/18 ,  C08L65/00 ,  C08L65/04 ,  C23C16/452 ,  F28D17/00 ,  H01L21/312 ,  H01L21/768 ,  H01L23/532 ,  C23C16/00

CPC classification number: H01L23/5329 ,  B01J19/123 ,  B01J19/1887 ,  B01J2219/00153 ,  B01J2219/00159 ,  B01J2219/0879 ,  B05D1/007 ,  B05D1/60 ,  B05D3/0254 ,  B05D3/061 ,  B05D3/062 ,  B29C71/02 ,  B29C2071/022 ,  B29C2071/025 ,  B29C2071/027 ,  C08G61/02 ,  C08G61/025 ,  C08G2261/3424 ,  C08J5/18 ,  C08J2365/04 ,  C08L65/00 ,  C08L65/04 ,  C23C16/452 ,  F28D17/005 ,  H01L21/0212 ,  H01L21/02263 ,  H01L21/312 ,  H01L21/3127 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/09701 ,  H01L2924/00

Abstract: A reactor for forming a reactive intermediate from a precursor for the deposition of a low dielectric constant polymer film via transport polymerization is disclosed. The reactor includes an inlet for admitting a flow of the precursor into the reactor, an interior for converting the precursor to the reactive intermediate, an outlet for admitting a flow of the reactive intermediate out of the interior, and at least one of an energy source and an oxidant source associated with the outlet for decomposing residues in the outlet.

Abstract translation: 公开了一种用于通过传输聚合沉积低介电常数聚合物膜的前体形成反应性中间体的反应器。 反应器包括用于将前体流入入反应器的入口，用于将前体转化为反应性中间体的内部，用于允许反应性中间体流出内部的出口和至少一个能量源 以及与出口相关联的用于分解出口中残留物的氧化剂源。

公开(公告)号：US20140337174A1

公开(公告)日：2014-11-13

申请号：US13893235

申请日：2013-05-13

Applicant: Xiaofan Lin ,  Arnab Sanat Kumar Dhua ,  Douglas Ryan Gray ,  Atul Kumar ,  Yu Lou

Inventor： Xiaofan Lin ,  Arnab Sanat Kumar Dhua ,  Douglas Ryan Gray ,  Atul Kumar ,  Yu Lou

IPC: G06Q30/06

CPC classification number: H04N5/23293 ,  G06F3/005 ,  G06K9/00201 ,  G06K9/00456 ,  G06K9/00671 ,  G06K9/344 ,  G06Q30/0269 ,  G06Q30/0623 ,  G06Q30/0641 ,  G06T11/60

Abstract: Various embodiments enable a computing device to perform tasks such as processing an image to recognize text or an object in an image to identify a particular product or related products associated with the text or object. In response to recognizing the text or the object as being associated with a product available for purchase from an electronic marketplace, one or more advertisements or product listings associated with the product can be displayed to the user. Accordingly, additional information for the associated product can be displayed, enabling the user to learn more about and purchase the product from the electronic marketplace through the portable computing device.

Abstract translation: 各种实施例使得计算设备能够执行诸如处理图像以识别图像中的文本或对象的任务，以识别与文本或对象相关联的特定产品或相关产品。 响应于将文本或对象识别为与可从电子市场购买的产品相关联，可以向用户显示与产品相关联的一个或多个广告或产品列表。 因此，可以显示关联产品的附加信息，使得用户能够通过便携式计算设备从电子市场了解更多关于和购买产品的信息。

公开(公告)号：US07582653B2

公开(公告)日：2009-09-01

申请号：US11812251

申请日：2007-06-15

Applicant: Sangita ,  Atul Kumar ,  Man Mohan Singh ,  Girish Kumar Jain ,  Puvvada Sri Ramanchandra Murthy ,  Suprabhat Ray

Inventor： Sangita ,  Atul Kumar ,  Man Mohan Singh ,  Girish Kumar Jain ,  Puvvada Sri Ramanchandra Murthy ,  Suprabhat Ray

IPC: A61K31/4453 ,  A61K31/40 ,  A61K31/135 ,  A61K31/12 ,  C07D295/04 ,  C07C317/14 ,  C07C321/00

CPC classification number: C07D295/088 ,  C07C317/22 ,  C07C317/24 ,  C07C323/19 ,  C07C323/22 ,  C07C323/25

Abstract: Novel mercaptophenyl naphthyl methane compounds, their pharmaceutically acceptable salts and compositions comprised thereof are useful for the prevention or treatment of various medical indications associated with estrogen dependent diseases or syndromes related to osteoporosis, bone loss, bone formation, cardiovascular disorders, neurodegenerative disorders, menopausal disorders, physiological disorders, diabetes disorders, prostatic carcinoma, cancer of breast, cancer of uterus, cancer of the cervix and cancer of the colon, threatened or habitual abortion, obesity, ovarian development or function, post-partum lactation and depression.

Abstract translation: 新的巯基苯基萘基甲烷化合物，其药学上可接受的盐和组合物可用于预防或治疗与与雌激素依赖性疾病或与骨质疏松症，骨丢失，骨形成，心血管疾病，神经变性疾病，绝经障碍相关的综合征相关的各种医学适应症 ，生理障碍，糖尿病，前列腺癌，乳腺癌，子宫癌，宫颈癌和结肠癌，威胁或习惯性流产，肥胖，卵巢发育或功能，产后泌乳和抑郁症。

公开(公告)号：US07549905B2

公开(公告)日：2009-06-23

申请号：US11239988

申请日：2005-09-30

Applicant: Chung J. Lee ,  Atul Kumar ,  Chieh Chen ,  George Tzeng

Inventor： Chung J. Lee ,  Atul Kumar ,  Chieh Chen ,  George Tzeng

IPC: H01J9/00

CPC classification number: H01L51/5253

Abstract: A method of forming an organic light emitting device on a substrate is provided, wherein the method includes forming an active device structure on the substrate, adhering a mask to the substrate, wherein the mask covers an electrical contact portion of the substrate while exposing the active device structure, forming an encapsulant layer over the active device structure and the mask, forming a separation between a portion of the encapsulant layer that covers the active device structure and a portion of the encapsulant layer that covers the mask, and removing the mask from the substrate.

Abstract translation: 提供一种在衬底上形成有机发光器件的方法，其中该方法包括在衬底上形成有源器件结构，将掩模粘贴到衬底上，其中掩模覆盖衬底的电接触部分，同时暴露活性物质 在活性器件结构和掩模上形成密封剂层，在覆盖有源器件结构的封装剂层的一部分和覆盖掩模的封装剂层的一部分之间形成间隔， 基质。

公开(公告)号：US07309395B2

公开(公告)日：2007-12-18

申请号：US10816179

申请日：2004-03-31

Applicant: Chung J. Lee ,  Atul Kumar ,  Chieh Chen ,  Yuri Pikovsky

Inventor： Chung J. Lee ,  Atul Kumar ,  Chieh Chen ,  Yuri Pikovsky

IPC: C23C16/52 ,  C23C16/04 ,  C23C16/22 ,  C23C16/452 ,  C23C16/48 ,  C23F1/00 ,  H01L21/306

CPC classification number: H01L21/0212 ,  B05D1/185 ,  B05D1/60 ,  B05D3/065 ,  B05D3/067 ,  B05D7/52 ,  H01L21/02263 ,  H01L21/02304 ,  H01L21/02337 ,  H01L21/02362 ,  H01L21/3121 ,  H01L21/3127

Abstract: A system for depositing a composite polymer dielectric film on a substrate is disclosed, wherein the composite polymer dielectric film includes a low dielectric constant polymer layer disposed between a first silane-containing layer and a second silane-containing layer. The system includes a process module having a processing chamber and a monomer delivery system configured to admit a gas-phase monomer into the processing chamber for deposition of the low dielectric constant polymer layer, a post-treatment module for annealing the composite polymer dielectric film, and a silane delivery system configured to admit a vapor flow containing a silane precursor into at least one of the process module and the post-treatment module for the formation of the first silane-containing layer and the silane-containing layer.

Abstract translation: 公开了一种用于在基板上沉积复合聚合物电介质膜的系统，其中复合聚合物电介质膜包括设置在第一含硅烷层和第二含硅烷层之间的低介电常数聚合物层。 该系统包括具有处理室和单体输送系统的处理模块，该单体输送系统构造成将气相单体进入处理室以沉积低介电常数聚合物层，用于退火复合聚合物电介质膜的后处理模块， 以及硅烷输送系统，其被构造成允许含有硅烷前体的蒸汽流进入至少一个工艺模块和后处理模块中，用于形成第一含硅烷层和含硅烷层。

公开(公告)号：US20050070597A1

公开(公告)日：2005-03-31

申请号：US10677116

申请日：2003-09-30

Applicant: Sangita ,  Atul Kumar ,  Man Singh ,  Suprabhat Ray ,  Girish Jain

Inventor： Sangita ,  Atul Kumar ,  Man Singh ,  Suprabhat Ray ,  Girish Jain

IPC: C07D311/58 ,  A61K31/541 ,  A61K31/353 ,  A61K31/452 ,  A61K31/496 ,  A61K31/5377 ,  C07D45/02

CPC classification number: C07D311/58

Abstract: The present invention relates to compounds of the formula I in which substituents R2 and R3 are arranged in trans-configuration: wherein: R1 is H or C1-C6 alkyl; C3-C7 cycloalkyl; R2 is phenyl, optionally substituted with 1 to 5 substituents independently selected from the group comprising OH, C1-C6-alkyl, halogen, nitro, cyano, SH, SR4, trihalo-C1-C6-alkyl, C1-C6-alkoxy and phenyl, wherein R4 is C1-C6 alkyl; R3 is phenyl substituted with OR5 wherein R5 has the formula (II), (III) or (IV) wherein Y is chosen from NHR4, NR42, NHCOR4, NHSO2R4, CONHR4, CONR4, CONR42, COOH, COOR4, SO2R4, SOR4, SONHR4, SONR42, a C3-C7 heterocyclic ring, saturated or unsaturated, containing one or two heteroatoms independently selected from the group consisting of O, S and N, optionally being substituted with 1 to 3 substituents independently selected from the group comprising H, OH, halogen, nitro, cyano, SH, SR4, trihalo-C1-C6-alkyl, C1-C6-alkyl and C1-C6-alkoxy, preferably NHR4, NR24, or a nitrogen heterocycle, wherein R4 is as defined above, and the esters, ethers, and salts of the compounds of formula I, optionally along pharmaceutically acceptable excipients, a process for the preparation of the same, and a method of preventing and/or treating estrogen-related disease conditions in a subject using compounds of formula 1, or its salts, optionally along with pharmaceutically acceptable excipients.

Abstract translation: 本发明涉及式I化合物，其中取代基R 2和R 3以反式构型排列：其中：R 1是H或C 1 -C 6烷基; C3-C7环烷基; R 2是苯基，任选地被1至5个独立地选自OH，C 1 -C 6 - 烷基，卤素，硝基，氰基，SH，SR 4， - 3卤代-C 1 -C 6烷基，C 1 C 1-6 - 烷氧基和苯基，其中R 4是C 1 -C 6烷基; R 3是被OR 5取代的苯基，其中R 5具有式（II），（III）或（IV），其中Y选自NHR 4，NR 4，NHCOR 4 >，NHSO 2 R 4，CONHR 4，CONR 4，CONR 4，COOH，COOR 4，SO 2 R 4，SOR 4，SONHR 4，SONR 4 饱和或不饱和的C3-C7杂环，其含有一个或两个独立地选自O，S和N的杂原子，任选被1至3个独立地选自H，OH，卤素， 硝基，氰基，SH，SR 4，三卤代-C 1 -C 6烷基，C 1 -C 6烷基和C 1 -C 6烷氧基，优选NH 4，NR 2 4或氮杂环， 4>如上所定义，并且式I化合物的酯，醚和盐，任选地沿着药学上可接受的赋形剂，其制备方法，以及预防和/或治疗雌激素相关疾病的方法 使用式1化合物的受试者的条件，或其盐，任选地与药物 lly可接受的赋形剂。

公开(公告)号：US06527855B2

公开(公告)日：2003-03-04

申请号：US09974178

申请日：2001-10-10

Applicant: Mark J. DelaRosa ,  Toh-Ming Lu ,  Atul Kumar

Inventor： Mark J. DelaRosa ,  Toh-Ming Lu ,  Atul Kumar

IPC: C30B2500

CPC classification number: C23C16/18

Abstract: Cobalt thin films were prepared by atomic layer deposition (ALD). The precursor cobalt(II) acetylacetonate [Co(C5H7O2)2] was used to selectively deposit films onto iridium substrates using hydrogen reduction. Cobalt growth was observed on SiO2, silicon, fluorinated silica glass (FSG), and tantalum when silane was used as a reducing agent.

Abstract translation: 通过原子层沉积（ALD）制备钴薄膜。 使用乙酸丙酮前体钴（II）[Co（C 5 H 7 O 2）2]使用氢还原将膜选择性地沉积在铱底物上。 当使用硅烷作为还原剂时，在SiO2，硅，氟化石英玻璃（FSG）和钽上观察到钴生长。