公开(公告)号：US20210043449A1

公开(公告)日：2021-02-11

申请号：US17045453

申请日：2019-04-08

Applicant: Applied Materials, Inc.

Inventor： Eswaranand VENKATASUBRAMANIAN ,  Yang YANG ,  Pramit MANNA ,  Kartik RAMASWAMY ,  Takehito KOSHIZAWA ,  Abhijit Basu MALLICK

IPC: H01L21/02 ,  C23C16/26 ,  H01L21/033

Abstract: Embodiments herein provide methods of depositing an amorphous carbon layer using a plasma enhanced chemical vapor deposition (PECVD) process and hard masks formed therefrom. In one embodiment, a method of processing a substrate includes positioning a substrate on a substrate support, the substrate support disposed in a processing volume of a processing chamber, flowing a processing gas comprising a hydrocarbon gas and a diluent gas into the processing volume, maintaining the processing volume at a processing pressure less than about 100 mTorr, igniting and maintaining a deposition plasma of the processing gas by applying a first power to one of one or more power electrodes of the processing chamber, maintaining the substrate support at a processing temperature less than about 350° C., exposing a surface of the substrate to the deposition plasma, and depositing an amorphous carbon layer on the surface of the substrate.

公开(公告)号：US20210040618A1

公开(公告)日：2021-02-11

申请号：US16982955

申请日：2018-10-16

Applicant: Applied Materials, Inc.

Inventor： Eswaranand VENKATASUBRAMANIAN ,  Yang YANG ,  Pramit MANNA ,  Kartik RAMASWAMY ,  Takehito KOSHIZAWA ,  Abhijit B. MALLICK

IPC: C23C16/503 ,  H01L21/02 ,  C23C16/505 ,  C23C16/458 ,  C23C16/455 ,  C23C16/52

Abstract: Embodiments of the present disclosure relate to methods for depositing an amorphous carbon layer onto a substrate, including over previously formed layers on the substrate, using a plasma-enhanced chemical vapor deposition (PECVD) process, in particular, the methods described herein utilize a combination of RF AC power and pulsed DC power to create a plasma which deposits an amorphous carbon layer with power to create a plasma which deposits an amorphour carbon layer with a high ratio of sp3 (diamond-like) carbon to sp2 (graphite-like) carbon. The methods also provide for lower processing pressures, lower processing temperatures, and higher processing powers, each of which, alone or in combination, may further increase the relative fraction of sp3 carbon in the deposited amorphous carbon layer. As a result of the higher sp3 carbon fraction, the methods described herein provide amorphous carbon layers having improved density, rigidity, etch selectivity, and film stress as compared to amorphous carbon layers deposited by conventional methods.

公开(公告)号：US20200161178A1

公开(公告)日：2020-05-21

申请号：US16675385

申请日：2019-11-06

Applicant: Applied Materials, Inc.

Inventor： Shishi JIANG ,  Kurtis LESCHKIES ,  Pramit MANNA ,  Abhijit MALLICK

IPC: H01L21/768 ,  H01L21/02

Abstract: Embodiments described herein relate to methods of seam-free gapfilling and seam healing that can be carried out using a chamber operable to maintain a supra-atmospheric pressure (e.g., a pressure greater than atmospheric pressure). One embodiment includes positioning a substrate having one or more features formed in a surface of the substrate in a process chamber and exposing the one or more features of the substrate to at least one precursor at a pressure of about 1 bar or greater. Another embodiment includes positioning a substrate having one or more features formed in a surface of the substrate in a process chamber. Each of the one or more features has seams of a material. The seams of the material are exposed to at least one precursor at a pressure of about 1 bar or greater.

公开(公告)号：US20200051815A1

公开(公告)日：2020-02-13

申请号：US16659194

申请日：2019-10-21

Applicant: Applied Materials, Inc.

Inventor： Pramit MANNA ,  Shishi JIANG ,  Rui CHENG ,  Abhijit Basu MALLICK

IPC: H01L21/02

Abstract: Methods for gapfilling semiconductor device features, such as high aspect ratio trenches, with amorphous silicon film are provided. First, a substrate having features formed in a first surface thereof is positioned in a processing chamber. A conformal deposition process is then performed to deposit a conformal silicon liner layer on the sidewalls of the features and the exposed first surface of the substrate between the features. A flowable deposition process is then performed to deposit a flowable silicon layer over the conformal silicon liner layer. A curing process is then performed to increase silicon density of the flowable silicon layer. Methods described herein generally improve overall etch selectivity by the conformal silicon deposition and the flowable silicon deposition two-step process to realize seam-free gapfilling between features with high quality amorphous silicon film.

公开(公告)号：US20190221422A1

公开(公告)日：2019-07-18

申请号：US16246776

申请日：2019-01-14

Applicant: Applied Materials, Inc.

Inventor： Fei WANG ,  Miaojun WANG ,  Pramit MANNA ,  Shishi JIANG ,  Abhijit Basu MALLICK ,  Robert Jan VISSER

IPC: H01L21/027

Abstract: Methods of selectively depositing a mask layer on a surface of a patterned substrate and self-aligned patterned masks are provided herein. In one embodiment, a method of selectivity depositing a mask layer includes positioning the patterned substrate on a substrate support in a processing volume of a processing chamber, exposing the surface of the patterned substrate to a parylene monomer gas, forming a first layer on the patterned substrate, wherein the first layer comprises a patterned parylene layer, and depositing a second layer on the first layer. In another embodiment, a self-aligned patterned mask comprises a parylene layer comprising a plurality of parylene features and a plurality of openings, the parylene layer is disposed on a patterned substrate comprising a dielectric layer and a plurality of metal features, the plurality of metal feature comprise a parylene deposition inhibitor metal, and the plurality of parylene features are selectivity formed on dielectric surfaces of the dielectric layer.

公开(公告)号：US20190189435A1

公开(公告)日：2019-06-20

申请号：US16201095

申请日：2018-11-27

Applicant: Applied Materials, Inc.

Inventor： Shishi JIANG ,  Kurtis LESCHKIES ,  Pramit MANNA ,  Abhijit Basu MALLICK ,  Steven VERHAVERBEKE

IPC: H01L21/02 ,  C23C8/10

Abstract: Implementations described herein generally relate to methods for forming a low-k dielectric material on a semiconductor substrate. More specifically, implementations described herein relate to methods of forming a silicon oxide film at high pressure and low temperatures. In one implementation, a method of forming a silicon oxide film is provided. The method comprises loading a substrate having a silicon-containing film formed thereon into a processing region of a high-pressure vessel. The method further comprises forming a silicon oxide film on the silicon-containing film. Forming the silicon oxide film on the silicon-containing film comprises exposing the silicon-containing film to a processing gas comprising steam at a pressure greater than about 1 bar and maintaining the high-pressure vessel at a temperature between about 100 degrees Celsius and about 500 degrees Celsius.

公开(公告)号：US20180350595A1

公开(公告)日：2018-12-06

申请号：US15994409

申请日：2018-05-31

Applicant: Applied Materials, Inc.

Inventor： Swaminathan T. SRINIVASAN ,  Atashi BASU ,  Pramit MANNA ,  Khokan C. PAUL ,  Diwakar N. KEDLAYA

IPC: H01L21/02 ,  H01L21/67 ,  C23C16/24 ,  C23C16/56

CPC classification number: H01L21/02348 ,  C23C16/24 ,  C23C16/345 ,  C23C16/401 ,  C23C16/56 ,  H01L21/02123 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02208 ,  H01L21/02211 ,  H01L21/02271 ,  H01L21/0234 ,  H01L21/321 ,  H01L21/67115 ,  H01L21/67167 ,  H01L21/6719 ,  H01L21/67207 ,  H01L21/67742

Abstract: In an embodiment, a method includes depositing a silicon matrix on a substrate; exposing the silicon matrix to a first wavelength or wavelength range of ultraviolet radiation in an ultraviolet processing chamber; exposing the silicon matrix to a second wavelength or wavelength range of ultraviolet radiation in an ultraviolet processing chamber, wherein the second wavelength or wavelength range includes a wavelength lower than any wavelength in the first wavelength or wavelength range; exposing the silicon matrix to a third wavelength or wavelength range of ultraviolet radiation in an ultraviolet processing chamber, wherein the third wavelength or wavelength range includes a wavelength lower than any wavelength in the first wavelength or wavelength range and second wavelength or wavelength range; and a repeat exposure of any wavelength range. In some embodiments, a healing operation comprising a deposition operation, a reactive cure, a thermal cure, or a combination thereof may be performed.

公开(公告)号：US20170301537A1

公开(公告)日：2017-10-19

申请号：US15636239

申请日：2017-06-28

Applicant: Applied Materials, Inc.

Inventor： Swayambhu P. BEHERA ,  Shahid SHAIKH ,  Pramit MANNA ,  Mandar B. PANDIT ,  Tersem SUMMAN ,  Patrick REILLY ,  Deenesh PADHI ,  Bok Hoen KIM ,  Heung Lak PARK ,  Derek R. WITTY

IPC: H01L21/02 ,  C23C16/26 ,  C23C16/50 ,  H01L21/311 ,  H01L21/033

CPC classification number: H01L21/02115 ,  C23C16/26 ,  C23C16/50 ,  H01L21/02274 ,  H01L21/0337 ,  H01L21/31116

Abstract: Embodiments of the disclosure relate to deposition of a conformal carbon-based material. In one embodiment, the method comprises depositing a sacrificial dielectric layer over a substrate, forming patterned features on the substrate by removing portions of the sacrificial dielectric layer to expose an upper surface of the substrate, introducing a hydrocarbon source, a plasma-initiating gas, and a dilution gas into the processing chamber, generating a plasma in the processing chamber at a deposition temperature of about 80° C. to about 550° C. to deposit a conformal amorphous carbon layer on the patterned features and the exposed upper surface of the substrate, selectively removing the amorphous carbon layer from an upper surface of the patterned features and the upper surface of the substrate using an anisotropic etching process to provide the patterned features filled within sidewall spacers, and removing the patterned features formed from the sacrificial dielectric layer.

公开(公告)号：US20160049305A1

公开(公告)日：2016-02-18

申请号：US14799374

申请日：2015-07-14

Applicant: Applied Materials, Inc.

Inventor： Bencherki MEBARKI ,  Bok Hoen KIM ,  Deenesh PADHI ,  Li Yan MIAO ,  Pramit MANNA ,  Christopher Dennis BENCHER ,  Mehul B. NAIK ,  Huixiong DAI ,  Christopher S. NGAI ,  Daniel Lee DIEHL

IPC: H01L21/308 ,  H01L21/02 ,  H01L21/027 ,  H01L21/311

CPC classification number: H01L21/3088 ,  H01L21/02115 ,  H01L21/02266 ,  H01L21/02274 ,  H01L21/0276 ,  H01L21/0337 ,  H01L21/3081 ,  H01L21/3086 ,  H01L21/31111 ,  H01L21/31144

Abstract: Embodiments of the disclosure generally provide a method of forming a reduced dimension pattern in a hardmask that is optically matched to an overlying photoresist layer. The method generally comprises of application of a dimension shrinking conformal carbon layer over the field region, sidewalls, and bottom portion of the patterned photoresist and the underlying hardmask at temperatures below the decomposition temperature of the photoresist. The methods and embodiments herein further involve removal of the conformal carbon layer from the bottom portion of the patterned photoresist and the hardmask by an etch process to expose the hardmask, etching the exposed hardmask substrate at the bottom portion, followed by the simultaneous removal of the conformal carbon layer, the photoresist, and other carbonaceous components. A hardmask with reduced dimension features for further pattern transfer is thus yielded.

Abstract translation: 本公开的实施例通常提供在与上覆光致抗蚀剂层光学匹配的硬掩模中形成减小尺寸图案的方法。 该方法通常包括在低于光致抗蚀剂的分解温度的温度下，在图案化的光致抗蚀剂和下面的硬掩模的场区域，侧壁和底部上施加尺寸收缩的保形碳层。 本文的方法和实施例还涉及通过蚀刻工艺从图案化的光致抗蚀剂和硬掩模的底部部分去除保形碳层，以暴露硬掩模，在底部蚀刻暴露的硬掩模基板，随后同时去除 保形碳层，光致抗蚀剂等碳质成分。 因此产生了用于进一步模式转移的尺寸减小特征的硬掩模。

公开(公告)号：US20160027614A1

公开(公告)日：2016-01-28

申请号：US14697385

申请日：2015-04-27

Applicant: Applied Materials, Inc.

Inventor： Pramit MANNA ,  Abhijit Basu MALLICK ,  Mukund SRINIVASAN ,  Rui CHENG

IPC: H01J37/32 ,  C23C16/06 ,  C23C16/26 ,  C23C16/04

CPC classification number: C23C16/26 ,  C23C16/042 ,  C23C16/06 ,  C23C16/30 ,  H01J37/32091

Abstract: Embodiments of the present disclosure relate to a metal-doped amorphous carbon hardmask for etching the underlying layer, layer stack, or structure. In one embodiment, a method of processing a substrate in a processing chamber includes exposing a substrate to a gas mixture comprising a carbon-containing precursor and a metal-containing precursor, reacting the carbon-containing precursor and the metal-containing precursor in the processing chamber to form a metal-doped carbon layer over a surface of the substrate, forming in the metal-doped carbon layer a defined pattern of through openings, and transferring the defined pattern to an underlying layer beneath the metal-doped carbon layer using the metal-doped carbon layer as a mask. An etch hardmask using the inventive metal-doped amorphous carbon film provides reduced compressive stress, high hardness, and therefore higher etch selectivity.

Abstract translation: 本公开的实施例涉及用于蚀刻下层，层叠或结构的金属掺杂非晶碳硬掩模。 在一个实施方案中，在处理室中处理衬底的方法包括将衬底暴露于包含含碳前体和含金属的前体的气体混合物中，使该含碳前体和含金属的前体在加工过程中反应 室，以在衬底的表面上形成金属掺杂碳层，在金属掺杂碳层中形成限定图形的通孔，并将定义的图案转移到金属掺杂碳层下方的下层，使用金属 掺杂碳层作为掩模。 使用本发明的金属掺杂的非晶碳膜的蚀刻硬掩模提供降低的压缩应力，高硬度，因此提高了蚀刻选择性。