公开(公告)号：US08444869B1

公开(公告)日：2013-05-21

申请号：US12786230

申请日：2010-05-24

Applicant: Haruhiro Harry Goto ,  David Cheung

Inventor： Haruhiro Harry Goto ,  David Cheung

IPC: H01L21/302

CPC classification number: H01L21/67028 ,  H01J2237/335 ,  H01L21/02057 ,  H01L21/0209 ,  H01L21/6719 ,  H01L21/67748 ,  H01L21/68771 ,  Y10S134/902 ,  Y10S438/906

Abstract: A method and apparatus for cleaning a wafer. The wafer is heated and moved to a processing station within the apparatus that has a platen either permanently in a platen down position or is transferable from a platen up position to the platen down position. The wafer is positioned over the platen so as not to contact the platen and provide a gap between the platen and wafer. The gap may be generated by positioning the platen in a platen down position. A plasma flows into the gap to enable the simultaneous removal of material from the wafer front side, backside and edges. The apparatus may include a single processing station having the gap residing therein, or the apparatus may include a plurality of processing stations, each capable of forming the gap therein for simultaneously removing additional material from the wafer front side, backside and edges.

Abstract translation: 一种用于清洁晶片的方法和装置。 晶片被加热并移动到设备内的处理站，该处理站具有永久地处于压板下降位置的压板，或者可以从压板向上位置传递到压板向下位置。 将晶片定位在压板上方，以便不与压板接触并在压板和晶片之间提供间隙。 可以通过将压板放置在压板向下位置来产生间隙。 等离子体流入间隙，以能够从晶片正面，背面和边缘同时移除材料。 该设备可以包括具有位于其中的间隙的单个处理站，或者该设备可以包括多个处理站，每个处理站能够在其中形成间隙，以从晶片前侧，后侧和边缘同时移除附加材料。

公开(公告)号：US08409249B2

公开(公告)日：2013-04-02

申请号：US12079049

申请日：2008-03-24

Applicant: Olexander Hnojewyj ,  Bruce Addis ,  Daniel Browne ,  David Cheung

Inventor： Olexander Hnojewyj ,  Bruce Addis ,  Daniel Browne ,  David Cheung

IPC: A61B17/08

CPC classification number: A61B17/0057 ,  A61B17/00491 ,  A61B2017/00004 ,  A61B2017/00495 ,  A61B2017/00637 ,  A61B2017/0065 ,  A61B2017/00654 ,  A61B2017/00663

Abstract: Systems and methods employ functional instruments to close incisions and wounds using a suture knot in combination with a biocompatible material composition. The systems and methods are well suited for use, for example, at a vascular puncture site following a vascular access procedure.

公开(公告)号：US20120135376A1

公开(公告)日：2012-05-31

申请号：US13262541

申请日：2010-03-30

Applicant: David Cheung ,  Edwin Shors ,  William Knox

Inventor： David Cheung ,  Edwin Shors ,  William Knox

IPC: A61C19/06 ,  B29C39/38 ,  A61P43/00 ,  A61C5/14 ,  A61K9/00 ,  A61K38/39

CPC classification number: A61C8/0006 ,  A61L27/24 ,  A61L27/50 ,  A61L27/56 ,  A61L27/58 ,  A61L2430/02

Abstract: A biocompatible, resorbable collagen membrane having a wedge shape with a thick edge of relatively higher strength and rigidity and a thin edge of relatively higher deformability and elasticity, which membrane is bendable to a desired configuration and is sufficiently rigid to retain the bent configuration upon implantation at a surgical site; a method of making such a membrane, and the use of such a membrane in a “sinus lift” procedure for augmenting alveolar bone.

Abstract translation: 具有楔形形状的生物相容性可再吸收的胶原膜，其具有相对较高强度和刚性的较厚边缘以及相对较高变形能力和弹性的薄边缘，该膜可弯曲成所需构型，并且足够刚性以在植入时保持弯曲构型 在手术部位; 制造这种膜的方法，以及在“窦升高”方法中使用这种膜来增加牙槽骨。

公开(公告)号：US20110139175A1

公开(公告)日：2011-06-16

申请号：US12963503

申请日：2010-12-08

Applicant: David Cheung ,  Haoquan Fang ,  Jack Kuo ,  Ilia Kalinovski ,  Ted Li ,  Andrew Yao

Inventor： David Cheung ,  Haoquan Fang ,  Jack Kuo ,  Ilia Kalinovski ,  Ted Li ,  Andrew Yao

IPC: H05H1/24 ,  B08B13/00 ,  B08B7/00

CPC classification number: H01L21/31138 ,  H01J37/32357 ,  H01L21/02057

Abstract: Improved methods and apparatus for stripping photoresist and removing ion implant related residues from a work piece surface are provided. According to various embodiments, the workpiece is exposed to a passivation plasma, allowed to cool for a period of time, and then exposed to an oxygen-based or hydrogen-based plasma to remove the photoresist and ion implant related residues. Aspects of the invention include reducing silicon loss, leaving little or no residue while maintaining an acceptable strip rate. In certain embodiments, methods and apparatus remove photoresist material after high-dose ion implantation processes.

Abstract translation: 提供了用于剥离光致抗蚀剂和从工件表面去除离子注入相关残留物的改进的方法和设备。 根据各种实施例，工件暴露于钝化等离子体，允许冷却一段时间，然后暴露于氧基或氢基等离子体以除去光致抗蚀剂和与离子注入相关的残余物。 本发明的方面包括减少硅损失，留下很少或没有残留物，同时保持可接受的剥离速率。 在某些实施方案中，方法和装置在高剂量离子注入工艺之后去除光致抗蚀剂材料。

公开(公告)号：US20110126196A1

公开(公告)日：2011-05-26

申请号：US12626432

申请日：2009-11-25

Applicant: David Cheung ,  Mani Prasad Kancherla ,  Deepak Kothari ,  Gary Hemminger

Inventor： David Cheung ,  Mani Prasad Kancherla ,  Deepak Kothari ,  Gary Hemminger

IPC: G06F9/50

CPC classification number: G06F9/5077 ,  G06F9/45533 ,  G06F9/45537 ,  H04L12/6418 ,  H04L29/06176 ,  H04M7/006

Abstract: Techniques for providing core-based virtualization based upon cores provided by one or more processors of a system. A device such as a network device comprising multiple processor cores provides for core-based virtualization.

Abstract translation: 基于由系统的一个或多个处理器提供的核提供基于核心的虚拟化的技术。 包括多个处理器核心的诸如网络设备的设备提供基于核心的虚拟化。

公开(公告)号：US07651725B2

公开(公告)日：2010-01-26

申请号：US11923037

申请日：2007-10-24

Applicant: Wai-Fan Yau ,  David Cheung ,  Shin-Puu Jeng ,  Kuowei Liu ,  Yung-Cheng Yu

Inventor： Wai-Fan Yau ,  David Cheung ,  Shin-Puu Jeng ,  Kuowei Liu ,  Yung-Cheng Yu

IPC: B05D5/12 ,  H01L21/4763

CPC classification number: H01L21/76834 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/02362 ,  H01L21/3122 ,  H01L21/31612 ,  H01L21/31633 ,  H01L21/76801 ,  H01L21/7681 ,  H01L21/76828 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/76835 ,  H01L21/76837

Abstract: A method and apparatus for depositing a low dielectric constant film by reaction of an organo silane compound and an oxidizing gas. The oxidized organo silane film has excellent barrier properties for use as a liner or cap layer adjacent other dielectric layers. The oxidized organo silane film can also be used as an etch stop or an intermetal dielectric layer for fabricating dual damascene structures. The oxidized organo silane films also provide excellent adhesion between different dielectric layers. A preferred oxidized organo silane film is produced by reaction of methyl silane, CH3SiH3, and N2O.

Abstract translation: 一种通过有机硅烷化合物和氧化性气体反应沉积低介电常数膜的方法和装置。 氧化的有机硅烷膜具有优异的阻挡性能，用作与其它电介质层相邻的衬垫层或盖层。 氧化的有机硅烷膜也可以用作制造双镶嵌结构的蚀刻停止层或金属间介质层。 氧化的有机硅烷膜也提供了不同介电层之间的极好的粘附性。 通过甲基硅烷，CH 3 SiH 3和N 2 O的反应制备优选的氧化有机硅烷膜。

公开(公告)号：US20080061439A1

公开(公告)日：2008-03-13

申请号：US11877488

申请日：2007-10-23

Applicant: Wai-Fan Yau ,  David Cheung ,  Shin-Puu Jeng ,  Kuowei Liu ,  Yung-Cheng Yu

Inventor： Wai-Fan Yau ,  David Cheung ,  Shin-Puu Jeng ,  Kuowei Liu ,  Yung-Cheng Yu

IPC: H01L23/48

CPC classification number: H01L21/76834 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/02362 ,  H01L21/3122 ,  H01L21/31612 ,  H01L21/31633 ,  H01L21/76801 ,  H01L21/7681 ,  H01L21/76828 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/76835 ,  H01L21/76837

Abstract: A method and apparatus for depositing a low dielectric constant film by reaction of an organo silane compound and an oxidizing gas. The oxidized organo silane film has excellent barrier properties for use as a liner or cap layer adjacent other dielectric layers. The oxidized organo silane film can also be used as an etch stop or an intermetal dielectric layer for fabricating dual damascene structures. The oxidized organo silane films also provide excellent adhesion between different dielectric layers. A preferred oxidized organo silane film is produced by reaction of methyl silane, CH3SiH3, and N2O.

公开(公告)号：US07202176B1

公开(公告)日：2007-04-10

申请号：US11011273

申请日：2004-12-13

Applicant: Haruhiro Harry Goto ,  David Cheung ,  Prabhat Kumar Sinha

Inventor： Haruhiro Harry Goto ,  David Cheung ,  Prabhat Kumar Sinha

IPC: H01L21/302 ,  H01L21/3065

CPC classification number: H01L21/02063 ,  C01B3/00 ,  C01B7/20 ,  G03F7/427 ,  H01J37/32357 ,  H01J2237/3342 ,  H01L21/31138

Abstract: The present invention pertains to methods for removing unwanted material from a work piece. More specifically, the invention pertains to stripping photo-resist material and removing etch-related residues from a semiconductor wafer during semiconductor manufacturing. Methods involve implementing a hydrogen plasma operation with downstream mixing with an inert gas. The invention is effective at stripping photo-resist and removing residues from low-k dielectric material used in Damascene devices.

Abstract translation: 本发明涉及从工件去除不想要的材料的方法。 更具体地，本发明涉及在半导体制造期间剥离光致抗蚀剂材料并从半导体晶片去除蚀刻相关残余物。 方法包括在与惰性气体的下游混合中实施氢等离子体操作。 本发明在剥离抗蚀剂和从Damascene器件中使用的低k电介质材料中去除残余物方面是有效的。

公开(公告)号：US20050156317A1

公开(公告)日：2005-07-21

申请号：US11056459

申请日：2005-02-11

Applicant: Wai-Fan Yau ,  David Cheung ,  Shin-Puu Jeng ,  Kuowei Liu ,  Yung-Cheng Lu

Inventor： Wai-Fan Yau ,  David Cheung ,  Shin-Puu Jeng ,  Kuowei Liu ,  Yung-Cheng Lu

IPC: C23C16/40 ,  H01L21/316 ,  H01L21/768 ,  H01L21/4763 ,  H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC classification number: H01L21/76834 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/02362 ,  H01L21/3122 ,  H01L21/31612 ,  H01L21/31633 ,  H01L21/76801 ,  H01L21/7681 ,  H01L21/76828 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/76835 ,  H01L21/76837

Abstract: A method and apparatus for depositing a low dielectric constant film by reaction of an organo silane compound and an oxidizing gas. The oxidized organo silane film has excellent barrier properties for use as a liner or cap layer adjacent other dielectric layers. The oxidized organo silane film can also be used as an etch stop or an intermetal dielectric layer for fabricating dual damascene structures. The oxidized organo silane films also provide excellent adhesion between different dielectric layers. A preferred oxidized organo silane film is produced by reaction of methyl silane, CH3SiH3, and N2O.

Abstract translation: 一种通过有机硅烷化合物和氧化性气体反应沉积低介电常数膜的方法和装置。 氧化的有机硅烷膜具有优异的阻挡性能，用作与其它电介质层相邻的衬垫层或盖层。 氧化的有机硅烷膜也可以用作制造双镶嵌结构的蚀刻停止层或金属间介质层。 氧化的有机硅烷膜也提供了不同介电层之间的极好的粘附性。 优选的氧化有机硅烷膜是通过甲基硅烷，CH 3 3 SiH 3 N 2和N 2 O 2的反应制备的。

公开(公告)号：US20050023694A1

公开(公告)日：2005-02-03

申请号：US10924551

申请日：2004-08-24

Applicant: Claes Bjorkman ,  Melissa Yu ,  Hongqing Shan ,  David Cheung ,  Wai-Fan Yau ,  Kuowei Liu ,  Nasreen Chapra ,  Gerald Yin ,  Farhad Moghadam ,  Judy Huang ,  Dennis Yost ,  Betty Tang ,  Yunsang Kim

Inventor： Claes Bjorkman ,  Melissa Yu ,  Hongqing Shan ,  David Cheung ,  Wai-Fan Yau ,  Kuowei Liu ,  Nasreen Chapra ,  Gerald Yin ,  Farhad Moghadam ,  Judy Huang ,  Dennis Yost ,  Betty Tang ,  Yunsang Kim

IPC: H01L21/302 ,  A01C15/02 ,  A01C17/00 ,  C23C16/40 ,  H01L21/3065 ,  H01L21/31 ,  H01L21/311 ,  H01L21/312 ,  H01L21/316 ,  H01L21/768 ,  H01L23/522 ,  H01L23/48

CPC classification number: H01L21/76835 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/022 ,  H01L21/02208 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/3121 ,  H01L21/31612 ,  H01L21/31633 ,  H01L21/76801 ,  H01L21/76802 ,  H01L21/76807 ,  H01L21/76829

Abstract: A method of depositing and etching dielectric layers having low dielectric constants and etch rates that vary by at least 3:1 for formation of horizontal interconnects. The amount of carbon or hydrogen in the dielectric layer is varied by changes in deposition conditions to provide low k dielectric layers that can replace etch stop layers or conventional dielectric layers in damascene applications. A dual damascene structure having two or more dielectric layers with dielectric constants lower than about 4 can be deposited in a single reactor and then etched to form vertical and horizontal interconnects by varying the concentration of a carbon:oxygen gas such as carbon monoxide. The etch gases for forming vertical interconnects preferably comprises CO and a fluorocarbon, and CO is preferably excluded from etch gases for forming horizontal interconnects.

Abstract translation: 沉积和蚀刻具有低介电常数和蚀刻速率的介电层的方法，该介电层变化至少3:1以形成水平互连。 电介质层中的碳或氢的量可以通过沉积条件的变化来改变，以提供低k电介质层，其可代替蚀刻停止层或在镶嵌应用中的常规电介质层。 具有介电常数低于约4的两个或多个电介质层的双镶嵌结构可以沉积在单个反应器中，然后通过改变碳：氧气如一氧化碳的浓度进行蚀刻以形成垂直和水平互连。 用于形成垂直互连的蚀刻气体优选地包括CO和碳氟化合物，并且CO优选从用于形成水平互连的蚀刻气体中排除。