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公开(公告)号：US20160265100A1
公开(公告)日：2016-09-15
申请号：US15163321
申请日：2016-05-24
Applicant: First Solar, Inc.
Inventor： Feng Liao , Rick C. Powell , Gang Xiong
CPC classification number: C23C14/24 , B65G53/16 , C23C14/228
Abstract: An improved feeder system and method for a vapor transport deposition system that includes a carrier gas bypass flow line to allow for continuous carrier gas flow to a vaporizer unit when a vibratory unit which supplies powdered material and carrier gas to the vaporizer unit is out of service. A process gas flow line to the vibratory unit may be included when the powdered material contains a powdered dopant in the material mix.
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32.发明授权Method of reducing semiconductor window layer loss during thin film photovoltaic device fabrication, and resulting device structure 有权在薄膜光伏器件制造期间减少半导体窗口层损耗的方法，以及最终的器件结构公开(公告)号：US09437760B2
公开(公告)日：2016-09-06
申请号：US14209589
申请日：2014-03-13
Applicant: FIRST SOLAR, INC.
Inventor： Daniel Damjanovic , Rick C. Powell , Jigish Trivedi , Zhibo Zhao
IPC: H01L21/00 , H01L31/0296 , H01L31/18 , H01L21/02 , H01L31/0392 , H01L31/073
CPC classification number: H01L31/0296 , H01L21/02568 , H01L21/02631 , H01L31/02966 , H01L31/03925 , H01L31/073 , H01L31/1828 , H01L31/1832 , Y02E10/543 , Y02P70/521
Abstract: A completed photovoltaic device and method forming it are described in which fluxing of a window layer into an absorber layer is mitigated by the presence of a sacrificial fluxing layer.
Abstract translation: 描述了完成的形成它的光伏器件和方法，其中通过存在牺牲助熔层来减轻窗口层进入吸收层的磁化。
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公开(公告)号：US09337376B2
公开(公告)日：2016-05-10
申请号：US14551707
申请日：2014-11-24
Applicant: First Solar, Inc.
Inventor： Arnold Allenic , Zhigang Ban , John Barden , Benjamin Milliron , Rick C. Powell
CPC classification number: H01L31/1828 , C23C14/0629 , C23C14/228 , C23C14/243 , C23C14/246 , H01L21/02557 , H01L21/02562 , H01L21/0257 , H01L21/02573 , H01L21/02581 , H01L21/02617 , H01L21/02631 , H01L31/02963
Abstract: A multi-stage method and apparatus for vaporizing and depositing a tellurium containing semiconductor material on a substrate.
Abstract translation: 一种用于在衬底上蒸发并沉积含碲的半导体材料的多级方法和装置。
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34.发明授权Photovoltaic device with protective layer over a window layer and method of manufacture of the same 有权具有窗口层上的保护层的光伏器件及其制造方法公开(公告)号：US09276154B2
公开(公告)日：2016-03-01
申请号：US14170989
申请日：2014-02-03
Applicant: FIRST SOLAR, INC.
Inventor： Daniel Damjanovic , Jing Guo , Sreenivas Jayaraman , Oleh P. Karpenko , Feng Liao , Chong Lim , Rick C. Powell , Jigish Trivedi , Zhibo Zhao
IPC: H01L21/00 , H01L31/00 , H01L31/065 , H01L31/18 , H01L31/0216 , H01L31/073 , H01L31/0392
CPC classification number: H01L31/065 , H01L31/02167 , H01L31/03925 , H01L31/073 , H01L31/1828 , H01L31/1864 , H01L31/1872 , Y02E10/543 , Y02P70/521
Abstract: A photovoltaic device including a protective layer between a window layer and an absorber layer, the protective layer inhibiting dissolving/intermixing of the window layer into the absorber layer during a device activation step, and methods of forming such photovoltaic devices.
Abstract translation: 一种光伏器件，包括在窗口层和吸收层之间的保护层，该保护层在器件激活步骤期间抑制了窗口层在吸收层中的溶解/混合，以及形成这种光伏器件的方法。
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35.发明申请METHOD AND SYSTEM OF PROVIDING DOPANT CONCENTRATION CONTROL IN DIFFERENT LAYERS OF A SEMICONDUCTOR DEVICE 审中-公开在半导体器件的不同层中提供掺杂浓度控制的方法和系统公开(公告)号：US20150171258A1
公开(公告)日：2015-06-18
申请号：US14625649
申请日：2015-02-19
Applicant: First Solar, Inc.
Inventor： Arnold Allenic , John Barden , Feng Liao , Xilin Peng , Rick C. Powell , Kenneth M. Ring , Gang Xiong
IPC: H01L31/18 , C23C16/455 , H01J37/34 , C23C16/48 , C23C16/448 , C23C16/28 , C23C16/52 , C23C16/40
CPC classification number: H01L31/18 , C23C16/28 , C23C16/40 , C23C16/402 , C23C16/407 , C23C16/4488 , C23C16/455 , C23C16/483 , C23C16/52 , H01J37/3476 , H01J2237/332 , H01L21/02551 , H01L21/02568 , H01L21/02573 , H01L21/0262 , H01L31/02963 , H01L31/073 , Y02E10/543
Abstract: A method and system for controlling the amount of a second material incorporated into a first material by controlling the amount of a third material which can interact with the second material.
Abstract translation: 一种用于通过控制可与第二材料相互作用的第三材料的量来控制结合到第一材料中的第二材料的量的方法和系统。
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Patent Agency Ranking
公开(公告)号：US20150155424A1
公开(公告)日：2015-06-04
申请号：US14617201
申请日：2015-02-09
Applicant: FIRST SOLAR, INC.
Inventor： Arnold Allenic , Viral Parikh , Rick C. Powell , Gang Xiong
IPC: H01L31/18 , H01L31/0224
CPC classification number: H01L31/1836 , H01L21/02474 , H01L21/02491 , H01L21/02505 , H01L21/02562 , H01L21/02587 , H01L21/02631 , H01L31/022441 , H01L31/022466
Abstract: In general, a photovoltaic module may include a binary semiconductor layer formed from a vapor rich in one component of a binary semiconductor source.
Abstract translation: 通常，光伏模块可以包括由富含二元半导体源的一个部件的蒸气形成的二元半导体层。
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37.发明授权Method and system of providing dopant concentration control in different layers of a semiconductor device 有权在半导体器件的不同层中提供掺杂剂浓度控制的方法和系统公开(公告)号：US09006020B2
公开(公告)日：2015-04-14
申请号：US13739183
申请日：2013-01-11
Applicant: First Solar, Inc.
Inventor： Gang Xiong , Rick C. Powell , Xilin Peng , John Barden , Arnold Allenic , Feng Liao , Kenneth M. Ring
IPC: H01L31/18 , H01L21/02 , H01L31/0296 , H01L31/073
CPC classification number: H01L31/18 , C23C16/28 , C23C16/40 , C23C16/402 , C23C16/407 , C23C16/4488 , C23C16/455 , C23C16/483 , C23C16/52 , H01J37/3476 , H01J2237/332 , H01L21/02551 , H01L21/02568 , H01L21/02573 , H01L21/0262 , H01L31/02963 , H01L31/073 , Y02E10/543
Abstract: A method and system for controlling the amount of a second material incorporated into a first material by controlling the amount of a third material which can interact with the second material.
Abstract translation: 一种用于通过控制可与第二材料相互作用的第三材料的量来控制结合到第一材料中的第二材料的量的方法和系统。
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38.发明申请公开(公告)号：US20150079725A1
公开(公告)日：2015-03-19
申请号：US14551707
申请日：2014-11-24
Applicant: First Solar, Inc.
Inventor： Arnold Allenic , Zhigang Ban , John Barden , Benjamin Milliron , Rick C. Powell
IPC: H01L31/18 , H01L21/02 , H01L31/0296
CPC classification number: H01L31/1828 , C23C14/0629 , C23C14/228 , C23C14/243 , C23C14/246 , H01L21/02557 , H01L21/02562 , H01L21/0257 , H01L21/02573 , H01L21/02581 , H01L21/02617 , H01L21/02631 , H01L31/02963
Abstract: A multi-stage method and apparatus for vaporizing and depositing a tellurium containing semiconductor material on a substrate.
Abstract translation: 一种用于在衬底上蒸发并沉积含碲的半导体材料的多级方法和装置。
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公开(公告)号：US08921147B2
公开(公告)日：2014-12-30
申请号：US13966663
申请日：2013-08-14
Applicant: First Solar, Inc.
Inventor： Arnold Allenic , Zhigang Ban , John Barden , Benjamin Milliron , Rick C. Powell
CPC classification number: H01L31/1828 , C23C14/0629 , C23C14/228 , C23C14/243 , C23C14/246 , H01L21/02557 , H01L21/02562 , H01L21/0257 , H01L21/02573 , H01L21/02581 , H01L21/02617 , H01L21/02631 , H01L31/02963
Abstract: A multi-stage method and apparatus for vaporizing and depositing a tellurium containing semiconductor material on a substrate.
Abstract translation: 一种用于在衬底上蒸发并沉积含碲的半导体材料的多级方法和装置。
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40.发明申请公开(公告)号：US20140261688A1
公开(公告)日：2014-09-18
申请号：US14209740
申请日：2014-03-13
Applicant: FIRST SOLAR, INC
Inventor： Arnold Allenic , Zhigang Ban , Benyamin Buller , Markus Gloeckler , Benjamin Milliron , Xilin Peng , Rick C. Powell , Jigish Trivedi , Oomman K. Varghese , Jianjun Wang , Zhibo Zhao
IPC: H01L31/0296 , H01L31/18
CPC classification number: H01L31/0296 , H01L31/02963 , H01L31/02966 , H01L31/03925 , H01L31/073 , H01L31/18 , H01L31/1832 , Y02E10/543
Abstract: A photovoltaic device is disclosed including at least one Cadmium Sulfide Telluride (CdSxTe1-x) layer as are methods of forming such a photovoltaic device.
Abstract translation: 公开了包含至少一种硫镉碲化镉（CdSxTe1-x）层的光伏器件，以及形成这种光伏器件的方法。
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