公开(公告)号：US09275449B2

公开(公告)日：2016-03-01

申请号：US13943253

申请日：2013-07-16

Applicant: GLOBALFOUNDRIES, Inc.

Inventor： Lei Sun ,  Obert Reeves Wood, II

IPC: G06F17/50 ,  G06T7/00

CPC classification number: G06T7/0004 ,  G06T2207/10061 ,  G06T2207/20056 ,  G06T2207/30148

Abstract: A method of determining a dose-to-clear of a photoresist on a wafer includes providing an image of the wafer after the photoresist was exposed to a dose of energy and was developed, transforming the image of the wafer into frequency spectrum data, calculating an average frequency spectrum component of the frequency spectrum data, calculating a difference between the average frequency spectrum component and a noise average frequency spectrum component of a noise average frequency spectrum, and determining a dose-to-clear of the photoresist based on the difference between the average frequency spectrum component and the noise average frequency spectrum component.

Abstract translation: 确定晶片上的光致抗蚀剂的剂量清除的方法包括在光致抗蚀剂暴露于一定量的能量之后提供晶片的图像，并将其显影，将晶片的图像转换成频谱数据，计算 计算频谱数据的平均频谱分量，计算噪声平均频谱的平均频谱分量和噪声平均频谱分量之间的差，并且基于所述光谱的差异来确定光致抗蚀剂的剂量 - 平均频谱分量和噪声平均频谱分量。

公开(公告)号：US10199271B1

公开(公告)日：2019-02-05

申请号：US15693651

申请日：2017-09-01

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Ruilong Xie ,  Guillaume Bouche ,  Laertis Economikos ,  Lei Sun ,  Guoxiang Ning ,  Xunyuan Zhang

IPC: H01L29/45 ,  H01L21/768 ,  H01L29/78 ,  H01L29/08 ,  H01L23/535 ,  H01L21/285 ,  H01L23/532 ,  H01L23/528

Abstract: A structure and method for forming a self-aligned metal wire on a contact structure. The method for forming the self-aligned metal wire and contact structure may include, among other things, forming an initial contact structure above a substrate; forming a patterned mask on the initial contact structure, the mask including an opening; using the patterned mask to form an opening through the initial contact structure; forming a dielectric layer in the openings; removing the patterned mask to expose a remaining portion of the initial contact structure; and forming the metal wire on the remaining portion of the initial contact structure. The contact structure may include a vertical cross-sectional geometry including one of a trapezoid wherein a bottommost surface of the first contact structure is wider than an uppermost surface of the first contact structure, and a parallelogram. The metal wire may completely contact an uppermost surface of the contact structure.

公开(公告)号：US20180337045A1

公开(公告)日：2018-11-22

申请号：US15597277

申请日：2017-05-17

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Lei Sun ,  Ruilong Xie ,  Wenhui Wang ,  Yulu Chen ,  Erik Verduijn ,  Zhengqing John Qi ,  Guoxiang Ning ,  Daniel J. Dechene

IPC: H01L21/033 ,  H01L23/528 ,  H01L21/3065 ,  H01L21/768 ,  H01L21/027

CPC classification number: H01L21/0276 ,  H01L21/3083 ,  H01L21/31144 ,  H01L21/76879

Abstract: Methods of forming printed patterns and structures formed using printed patterns. A first line and a second line are lithographically printed in a first layer composed of photoimageable material with a space arranged between the first line and the second line. A dummy assist feature is also lithographically printed in the photoimageable material of the first layer. A second layer underlying the first layer is etched with the first line, the second line, and the dummy assist feature present as an etch mask. The dummy assist feature is arranged on a portion of the space adjacent to the first line and supports the photoimageable material of the first line during etching.

公开(公告)号：US10056292B2

公开(公告)日：2018-08-21

申请号：US15359037

申请日：2016-11-22

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Shao Beng Law ,  Genevieve Beique ,  Frank W. Mont ,  Lei Sun ,  Xunyuan Zhang

IPC: H01L21/44 ,  H01L21/768 ,  H01L21/3065 ,  H01L21/308

CPC classification number: H01L21/76816 ,  H01L21/0337

Abstract: Methods of lithographic patterning. A metal hardmask layer is formed on a dielectric layer and a patterned layer is formed on the metal hardmask layer. A metal layer is formed on an area of the metal hardmask layer exposed by an opening in the patterned layer. After the metal layer is formed, the patterned layer is removed from the metal hardmask layer. After the patterned layer is removed, the metal hardmask layer is patterned with the metal layer masking the metal hardmask layer over the area.

公开(公告)号：US20180226166A1

公开(公告)日：2018-08-09

申请号：US15424200

申请日：2017-02-03

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Yulu Chen ,  Francis Goodwin ,  Jed Rankin ,  Lei Sun ,  Obert Reeves Wood, II

IPC: G21K1/06 ,  G02B19/00 ,  G03F1/24 ,  G02B27/00 ,  G02B5/08 ,  G01M11/00

CPC classification number: G21K1/062 ,  G01M11/005 ,  G02B5/085 ,  G02B5/0891 ,  G02B27/0012 ,  G03F1/24 ,  G03F7/70316 ,  G03F7/70958 ,  G21K2201/067

Abstract: Extreme ultraviolet mirrors and masks used in lithography and methods for manufacturing an extreme ultraviolet mirror or mask. Initial data is obtained that includes materials and optical properties for a first intermixed layer, a second intermixed layer, a first pure layer, and a second pure layer in each of a plurality of periods of a multi-layer stack for an optical element. For multiple thicknesses for the first pure layer and multiple thicknesses for the second pure layer, a reflectivity of the multi-layer stack is determined based on the initial data, a thickness received for the first intermixed layer, and a thickness received for the second intermixed layer. One of the thicknesses for the first pure layer and one of the thicknesses for the second pure layer are selected that maximize the reflectivity of the multi-layer stack.

公开(公告)号：US09953834B1

公开(公告)日：2018-04-24

申请号：US15723232

申请日：2017-10-03

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Lei Sun ,  Ruilong Xie ,  Xunyuan Zhang ,  Ryan Ryoung-Han Kim

IPC: H01L21/4763 ,  H01L21/033 ,  H01L21/768

CPC classification number: H01L21/0338 ,  H01L21/0332 ,  H01L21/0335 ,  H01L21/0337 ,  H01L21/76816 ,  H01L21/7684 ,  H01L21/76877

Abstract: A method includes providing a structure having a dielectric layer, a 1st hardmask layer, a 2nd hardmask layer and a 1st mandrel layer disposed respectively thereon. A 1st mandrel plug is disposed in the 1st mandrel layer. A 2nd mandrel layer is disposed over the 1st mandrel layer. The 1st and 2nd mandrel layers are etched to form a plurality 1st mandrels, wherein the 1st mandrel plug extends entirely through a single 1st mandrel. The 1st mandrel plug is etched such that it is self-aligned with sidewalls of the single 1st mandrel. The 1st mandrels are utilized to form mandrel metal lines in the dielectric layer. The 1st mandrel plug is utilized to form a self-aligned mandrel continuity cut in a single mandrel metal line formed by the single 1st mandrel.

公开(公告)号：US09911604B1

公开(公告)日：2018-03-06

申请号：US15413823

申请日：2017-01-24

Applicant: GLOBALFOUNDRIES INC.

Inventor： Lei Sun ,  Xunyuan Zhang ,  Ruilong Xie ,  Yulu Chen

IPC: H01L21/311 ,  H01L21/027 ,  H01L29/66

CPC classification number: H01L21/0337 ,  H01L21/0274 ,  H01L21/3086 ,  H01L21/31144 ,  H01L21/32139 ,  H01L29/785

Abstract: Disclosed are methods of using a lithography-lithography-etch (LLE) technique to form a sidewall spacer pattern for patterning a target layer. In the methods, a photoresist layer is patterned by performing multiple lithographic processes with different photomasks, including a first photomask with a first pattern of parallel bars separated by spaces and a second photomask with a second pattern of opening(s) oriented in an essentially perpendicular direction as compared to the bar(s). The photoresist layer is then developed, creating a third pattern. The third pattern is transferred into a mandrel layer below to form mandrels of different lengths. Then, sidewall spacers are formed on the mandrels and the mandrels are selectively removed to form the sidewall spacer pattern. This sidewall spacer pattern is subsequently used in a sidewall image transfer (SIT) process to pattern a target layer below.

公开(公告)号：US09859120B1

公开(公告)日：2018-01-02

申请号：US15377125

申请日：2016-12-13

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Lei Sun ,  Ruilong Xie ,  Xunyuan Zhang ,  Ryan Ryoung-Han Kim

IPC: H01L21/4763 ,  H01L21/033 ,  H01L21/768

CPC classification number: H01L21/7684 ,  H01L21/0337 ,  H01L21/31144 ,  H01L21/76816 ,  H01L21/76877

Abstract: A method includes providing a structure having a dielectric layer, a 1st hardmask layer, a 2nd hardmask layer and a 1st mandrel layer disposed respectively thereon. A 1st mandrel plug is disposed in the 1st mandrel layer. A 2nd mandrel layer is disposed over the 1st mandrel layer. The 1st and 2nd mandrel layers are etched to form a plurality 1st mandrels, wherein the 1st mandrel plug extends entirely through a single 1st mandrel. The 1st mandrel plug is etched such that it is self-aligned with sidewalls of the single 1st mandrel. The 1st mandrels are utilized to form mandrel metal lines in the dielectric layer. The 1st mandrel plug is utilized to form a self-aligned mandrel continuity cut in a single mandrel metal line formed by the single 1st mandrel.

公开(公告)号：US09651855B2

公开(公告)日：2017-05-16

申请号：US14685701

申请日：2015-04-14

Applicant: GLOBALFOUNDRIES, Inc.

Inventor： Lei Sun ,  Wenhui Wang ,  Ryan Ryoung-Han Kim

IPC: G03F1/22 ,  G03F1/36 ,  G06F17/50 ,  H01L21/027 ,  G03F7/20

CPC classification number: G03F1/22 ,  G03F1/36 ,  G03F7/2045 ,  G06F17/5081 ,  H01L21/0274

Abstract: A method of optical proximity correction (OPC) in extreme ultraviolet lithography (EUV) lithography includes providing a patterned layout design including first and second design polygons that correspond with the pre-pattern opening, wherein the first and second design polygons are separated by a separation distance, and correcting the patterned layout design using OPC by generating (1) a third polygon that has dimensions corresponding to a combination of the first and second design polygons and the separation distance and (2) and filled polygon within the third polygon, thereby generating an OPC-corrected patterned layout design. EUV photomasks may be manufactured from the OPC-corrected patterned layout design, and integrated circuits may be fabricated using such EUV photomasks.

公开(公告)号：US09436078B2

公开(公告)日：2016-09-06

申请号：US14609588

申请日：2015-01-30

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Lei Sun ,  Obert Reeves Wood, II

IPC: G03F1/24 ,  G03F1/22

CPC classification number: G03F1/22 ,  G03F1/24 ,  G03F1/58

Abstract: Methods for creating a EUV photolithography mask with a thinner highly EUV absorbing absorber layer and the resulting device are disclosed. Embodiments include forming a multilayer reflector (MLR); forming first and second layers of a first EUV absorbing material over the MLR, the second layer being between the first layer and the MLR; and implanting the first layer with particles of a second EUV absorbing material, wherein the first EUV absorbing material is etchable and has a lower EUV absorption coefficient than the second EUV absorbing material, and wherein the implanted particles are substantially separated from each other.

Abstract translation: 公开了用于制造具有较薄的高度EUV吸收层的EUV光刻掩模和所得到的器件的方法。 实施例包括形成多层反射器（MLR）; 在所述MLR上形成第一EUV吸收材料的第一层和第二层，所述第二层位于所述第一层和所述MLR之间; 以及用第二EUV吸收材料的颗粒注入所述第一层，其中所述第一EUV吸收材料是可蚀刻的并且具有比所述第二EUV吸收材料更低的EUV吸收系数，并且其中所述注入的颗粒彼此基本上分离。