公开(公告)号：US20120295436A1

公开(公告)日：2012-11-22

申请号：US13547856

申请日：2012-07-12

申请人： Bob Kong ,  Zhi-Wen Sun ,  Chi-I Lang ,  Jinhong Tong ,  Tony Chiang

发明人： Bob Kong ,  Zhi-Wen Sun ,  Chi-I Lang ,  Jinhong Tong ,  Tony Chiang

IPC分类号： H01L21/768

CPC分类号： H01L21/02068 ,  C23C18/1651 ,  C23C18/54 ,  H01L21/288 ,  H01L21/76852 ,  H01L21/76874

摘要： Embodiments of the current invention describe methods of processing a semiconductor substrate that include applying a zincating solution to the semiconductor substrate to form a zinc passivation layer on the titanium-containing layer, the zincating solution comprising a zinc salt, FeCl3, and a pH adjuster.

摘要翻译： 本发明的实施方案描述了处理半导体衬底的方法，其包括将锌化溶液施加到半导体衬底上以在含钛层上形成锌钝化层，所述锌化溶液包含锌盐FeCl 3和pH调节剂。

公开(公告)号：US08283214B1

公开(公告)日：2012-10-09

申请号：US11963656

申请日：2007-12-21

申请人： Zhi-Wen Sun ,  Jinhong Tong ,  Chi-I Lang ,  Tony Chiang

发明人： Zhi-Wen Sun ,  Jinhong Tong ,  Chi-I Lang ,  Tony Chiang

IPC分类号： H01L21/20 ,  H01L21/00 ,  H01L21/16 ,  H01L21/8229

CPC分类号： H01L45/1253 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/1608 ,  H01L45/1616

摘要： Methods for forming a NiO film on a substrate for use with a resistive switching memory device are presenting including: preparing a nickel ion solution; receiving the substrate, where the substrate includes a bottom electrode, the bottom electrode utilized as a cathode; forming a Ni(OH)2 film on the substrate, where the forming the Ni(OH)2 occurs at the cathode; and annealing the Ni(OH)2 film to form the NiO film, where the NiO film forms a portion of a resistive switching memory element. In some embodiments, methods further include forming a top electrode on the NiO film and before the forming the Ni(OH)2 film, pre-treating the substrate. In some embodiments, methods are presented where the bottom electrode and the top electrode are a conductive material such as: Ni, Pt, Ir, Ti, Al, Cu, Co, Ru, Rh, a Ni alloy, a Pt alloy, an Ir alloy, a Ti alloy, an Al alloy, a Cu alloy, a Co alloy, an Ru alloy, and an Rh alloy.

摘要翻译： 在电阻式切换存储装置使用的基板上形成NiO膜的方法包括：制备镍离子溶液; 接收衬底，其中衬底包括底部电极，用作阴极的底部电极; 在衬底上形成Ni（OH）2膜，其中在阴极处形成Ni（OH）2; 并且还原Ni（OH）2膜以形成NiO膜，其中NiO膜形成电阻式开关存储元件的一部分。 在一些实施例中，方法还包括在NiO膜上形成顶部电极，并且在形成Ni（OH）2膜之前，预处理衬底。 在一些实施例中，呈现了底部电极和顶部电极为导电材料的方法，例如：Ni，Pt，Ir，Ti，Al，Cu，Co，Ru，Rh，Ni合金，Pt合金，Ir 合金，Ti合金，Al合金，Cu合金，Co合金，Ru合金和Rh合金。

公开(公告)号：US20120091590A1

公开(公告)日：2012-04-19

申请号：US13333509

申请日：2011-12-21

申请人： Bob Kong ,  Zhi-Wen Sun ,  Igor Ivanov ,  Jihong Tong

发明人： Bob Kong ,  Zhi-Wen Sun ,  Igor Ivanov ,  Jihong Tong

IPC分类号： H01L23/535

CPC分类号： C23C18/44 ,  C23C18/1605 ,  C23C18/1607 ,  C23C18/1637 ,  C23C18/1844 ,  H01L21/02068 ,  H01L21/0332 ,  H01L21/288 ,  H01L21/3105 ,  H01L21/76814 ,  H01L21/76849 ,  H01L21/7687 ,  H01L27/1052 ,  H01L28/65 ,  Y10T428/12493 ,  Y10T428/12875 ,  Y10T428/12903 ,  Y10T428/24917

摘要： Embodiments of the current invention describe a method of plating platinum selectively on a copper film using a self-initiated electroless process. In particular, platinum films are plated onto very thin copper films having a thickness of less than 300 angstroms. The electroless plating solution and the resulting structure are also described. This process has applications in the semiconductor processing of logic devices, memory devices, and photovoltaic devices.

摘要翻译： 本发明的实施方案描述了使用自引发的无电镀方法在铂膜上选择性镀铂的方法。 特别地，铂膜被镀在厚度小于300埃的非常薄的铜膜上。 还描述了化学镀溶液和所得结构。 该方法在逻辑器件，存储器件和光伏器件的半导体处理中具有应用。

公开(公告)号：US20120090987A1

公开(公告)日：2012-04-19

申请号：US13332760

申请日：2011-12-21

申请人： Alexander Gorer ,  Zhi-Wen Sun

发明人： Alexander Gorer ,  Zhi-Wen Sun

IPC分类号： C25D17/00 ,  C25D17/06

CPC分类号： C25D7/123 ,  C25D17/001 ,  C25D21/10

摘要： Combinatorial electrochemical deposition is described, including dividing a wafer into a plurality of substrates for combinatorial processing, immersing the plurality of substrates at least partially into a plurality of cells, within one integrated tool, including electrolytes, the cells also including electrodes immersed in the electrolytes, depositing layers on the substrates by applying potentials across the substrates and the electrodes, and varying characteristics of the depositing to perform the combinatorial processing.

摘要翻译： 描述了组合电化学沉积，包括将晶片分成多个用于组合处理的基板，将多个基板至少部分地浸入包括电解质的一个集成工具内的多个单元中，所述单元还包括浸入电解质中的电极 通过在基板和电极上施加电位而沉积在基板上，并且改变沉积的特性以执行组合处理。

公开(公告)号：US20110259750A1

公开(公告)日：2011-10-27

申请号：US13150850

申请日：2011-06-01

申请人： Hooman Hafezi ,  Aron Rosenfeld ,  Zhi-Wen Sun ,  Hua Chung ,  Lei Zhu

发明人： Hooman Hafezi ,  Aron Rosenfeld ,  Zhi-Wen Sun ,  Hua Chung ,  Lei Zhu

IPC分类号： C25D3/38 ,  C25D5/02 ,  C25D5/34

CPC分类号： C25D5/34 ,  C25D3/38 ,  C25D5/10 ,  C25D5/18 ,  C25D5/54 ,  H01L21/2885 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76861 ,  H01L21/76862 ,  H01L21/76868 ,  H01L21/76873 ,  H01L21/76877 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method is disclosed for depositing a copper seed layer onto a substrate surface. In one embodiment, the method includes providing a substrate having a barrier layer disposed on a substrate surface, wherein the barrier layer has a barrier surface comprising a material selected from the group consisting of cobalt, ruthenium, tungsten, titanium, and a compound of two or more thereof, and exposing the substrate to a non-complexed, acid electrochemical plating solution with a plating bias applied across the substrate surface to deposit a copper-containing seed layer directly on the barrier surface without intervening layer disposed therebetween.

摘要翻译： 公开了一种将铜籽晶层沉积在基底表面上的方法。 在一个实施例中，该方法包括提供具有设置在衬底表面上的阻挡层的衬底，其中阻挡层具有包含选自钴，钌，钨，钛和两种化合物的材料的阻挡表面 或更多，并且将衬底暴露于非复合的酸性电化学电镀溶液，其中跨越衬底表面施加电镀偏压，以将含铜种子层直接沉积在阻挡表面上，而不设置介于其间的中间层。

公开(公告)号：US20110151105A1

公开(公告)日：2011-06-23

申请号：US12970638

申请日：2010-12-16

申请人： Nikhil D. Kalyankar ,  Nitin Kumar ,  Zhi-Wen Sun ,  Kenneth A. Williams

发明人： Nikhil D. Kalyankar ,  Nitin Kumar ,  Zhi-Wen Sun ,  Kenneth A. Williams

IPC分类号： C23C16/52 ,  B05C11/00

CPC分类号： C23C18/1254 ,  B01J19/0046 ,  B01J2219/0036 ,  B01J2219/00443 ,  B01J2219/00691 ,  B01J2219/00702 ,  B01J2219/00756 ,  C40B30/00 ,  C40B60/12 ,  Y10T428/2991

摘要： Embodiments of the current invention describe a high performance combinatorial method and apparatus for the combinatorial development of coatings by a dip-coating process. The dip-coating process may be used for multiple applications, including forming coatings from varied sol-gel formulations, coating substrates uniformly with particles to combinatorially test particle removal formulations, and the dipping of substrates into texturing formulations to combinatorially develop the texturing formulations.

摘要翻译： 本发明的实施例描述了通过浸涂工艺组合开发涂层的高性能组合方法和装置。 浸涂方法可用于多种应用，包括由不同溶胶 - 凝胶制剂形成涂层，用颗粒均匀地涂覆底物以组合测试颗粒去除配方，以及将基材浸渍到变形配方中以组合开发变形配方。

公开(公告)号：US20100055422A1

公开(公告)日：2010-03-04

申请号：US12200841

申请日：2008-08-28

申请人： Bob Kong ,  Zhi-Wen Sun ,  Igor Ivanov ,  Jinhong Tong

发明人： Bob Kong ,  Zhi-Wen Sun ,  Igor Ivanov ,  Jinhong Tong

IPC分类号： B32B3/10 ,  C23C18/44 ,  H01L21/44

CPC分类号： C23C18/44 ,  C23C18/1605 ,  C23C18/1607 ,  C23C18/1637 ,  C23C18/1844 ,  H01L21/02068 ,  H01L21/0332 ,  H01L21/288 ,  H01L21/3105 ,  H01L21/76814 ,  H01L21/76849 ,  H01L21/7687 ,  H01L27/1052 ,  H01L28/65 ,  Y10T428/12493 ,  Y10T428/12875 ,  Y10T428/12903 ,  Y10T428/24917

摘要： Embodiments of the current invention describe a method of plating platinum selectively on a copper film using a self-initiated electroless process. In particular, platinum films are plated onto very thin copper films having a thickness of less than 300 angstroms. The electroless plating solution and the resulting structure are also described. This process has applications in the semiconductor processing of logic devices, memory devices, and photovoltaic devices.

摘要翻译： 本发明的实施方案描述了使用自引发的无电镀方法在铂膜上选择性镀铂的方法。 特别地，铂膜被镀在厚度小于300埃的非常薄的铜膜上。 还描述了化学镀溶液和所得结构。 该方法在逻辑器件，存储器件和光伏器件的半导体处理中具有应用。

公开(公告)号：US20050274622A1

公开(公告)日：2005-12-15

申请号：US11012965

申请日：2004-12-15

申请人： Zhi-Wen Sun ,  Renren He ,  Nicolay Kovarsky ,  You Wang

发明人： Zhi-Wen Sun ,  Renren He ,  Nicolay Kovarsky ,  You Wang

IPC分类号： C25D3/00 ,  C25D3/38 ,  C25D5/18 ,  C25D5/34 ,  C25D7/12 ,  H01L21/288 ,  H01L21/768

CPC分类号： H01L21/76873 ,  C25D3/38 ,  C25D5/18 ,  C25D5/34 ,  C25D7/123 ,  H01L21/2885 ,  H01L21/76843 ,  H01L21/76864

摘要： Embodiments of a method of copper plating a substrate surface with a group VIII metal layer have been described. In one embodiment, a method of plating copper on a substrate surface with a group VIII metal layer comprises pre-treating the substrate surface by removing a group VIII metal surface oxide layer and/or surface contaminants and plating the substrate in a copper plating solution comprising about 50 g/l to about 300 g/l of sulfuric acid at an initial plating current higher than the critical current density to deposit a continuous copper layer on the substrate surface. The Pre-treating the substrate can be accomplished by annealing the substrate in an environment with a hydrogen-containing gas environment and/or a non-reactive gas(es) to Ru, by a cathodic treatment in an acid-containing bath, or by immersing the substrate in an acid-containing bath.

摘要翻译： 已经描述了用VIII族金属层对基板表面进行镀铜的方法的实施例。 在一个实施例中，在基板表面上用第VIII族金属层电镀铜的方法包括通过去除第VIII族金属表面氧化物层和/或表面污染物并将该基板镀在包括 约50g / l至约300g / l的硫酸，其初始电镀电流高于临界电流密度，以在衬底表面上沉积连续的铜层。 通过在含酸浴中进行阴极处理，或通过在含酸浴中进行阴极处理，可以通过在具有含氢气体环境和/或非反应性气体的Ru的环境中对基底进行退火来实现基底的预处理 将基板浸入含酸浴中。

公开(公告)号：US06852242B2

公开(公告)日：2005-02-08

申请号：US09792444

申请日：2001-02-23

申请人： Zhi-Wen Sun ,  Anbei Jiang ,  Tuo-Chuan Huang

发明人： Zhi-Wen Sun ,  Anbei Jiang ,  Tuo-Chuan Huang

IPC分类号： B08B7/00 ,  C03C15/00 ,  C23C16/44 ,  C23F1/00 ,  H01J37/32 ,  H01L21/00 ,  H01L21/304 ,  H01L21/306 ,  H01L21/3065

CPC分类号： H01L21/02046 ,  H01J37/321 ,  H01J37/32449 ,  H01J37/32935

摘要： A substrate processing apparatus has a chamber with a substrate transport to transport a substrate onto a substrate support in the chamber, a gas supply to provide a gas in the chamber, a gas energizer to energize the gas, and a gas exhaust to exhaust the gas. A controller operates one or more of the substrate support, gas supply, gas energizer, and gas exhaust, to set etching process conditions in the chamber to etch a plurality of substrates, thereby depositing etchant residues on surfaces in the chamber. The controller also operates one or more of the substrate support, gas supply, gas energizer, and gas exhaust, to set cleaning process conditions in the chamber to clean the etchant residues. The cleaning process conditions comprise a volumetric flow ratio of O2 to CF4 of from about 1:1 to about 1:40.

摘要翻译： 基板处理装置具有具有基板输送的基板输送基板到室内的基板支撑体上的气室，在该室内提供气体的气体供给器，对该气体进行通电的气体增压器以及排出气体的排气 。 控制器操作衬底支撑件，气体供应器，气体激发器和气体排出中的一个或多个，以在腔室中设置蚀刻工艺条件以蚀刻多个衬底，由此在腔室中的表面上沉积蚀刻剂残留物。 控制器还操作一个或多个衬底支撑件，气体供应器，气体激励器和气体排出器，以设置腔室中的清洁工艺条件以清洁蚀刻剂残留物。 清洗过程条件包括O2至CF4的体积流量比为约1:1至约1:40。

公开(公告)号：US08784934B2

公开(公告)日：2014-07-22

申请号：US13305550

申请日：2011-11-28

申请人： Mohd Fadzli Anwar Hassan ,  Richard Blacker ,  Guowen Ding ,  Muhammad Imran ,  Jingyu Lao ,  Hien Minh Huu Le ,  Yiwei Lu ,  Zhi-Wen Sun

发明人： Mohd Fadzli Anwar Hassan ,  Richard Blacker ,  Guowen Ding ,  Muhammad Imran ,  Jingyu Lao ,  Hien Minh Huu Le ,  Yiwei Lu ,  Zhi-Wen Sun

IPC分类号： B05D5/06

CPC分类号： C03C17/366 ,  C03C17/2453 ,  C03C17/36 ,  C03C17/3618 ,  C03C17/3642 ,  C23C14/08 ,  C23C28/32 ,  C23C28/345 ,  H01B3/10

摘要： A transparent dielectric composition comprising tin, oxygen and one of aluminum or magnesium with preferably higher than 15% by weight of aluminum or magnesium offers improved thermal stability over tin oxide with respect to appearance and optical properties under high temperature processes. For example, upon a heat treatment at temperatures higher than 500 C, changes in color and index of refraction of the present transparent dielectric composition are noticeably less than those of tin oxide films of comparable thickness. The transparent dielectric composition can be used in high transmittance, low emissivity coated panels, providing thermal stability so that there are no significant changes in the coating optical and structural properties, such as visible transmission, IR reflectance, microscopic morphological properties, color appearance, and haze characteristics, of the as-coated and heated treated products.

摘要翻译： 包含锡，氧和铝或镁中的一种优选高于15重量％的铝或镁的透明电介质组合物相对于在高温过程下的外观和光学性质提供了比氧化锡更好的热稳定性。 例如，当在高于500℃的温度下进行热处理时，本发明透明电介质组合物的颜色变化和折射率显着小于具有相当厚度的氧化锡膜的变化。 透明电介质组合物可用于高透光率，低发射率涂层面板，提供热稳定性，使得涂层的光学和结构性能如可见透射率，IR反射率，微观形态特性，颜色外观和 涂层和加热处理产品的雾度特性。