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    Compartmentalized substrate processing chamber
    31.
    发明授权
    Compartmentalized substrate processing chamber 失效
    隔板基板处理室

    公开(公告)号：US5883017A

    公开(公告)日：1999-03-16

    申请号：US916161

    申请日：1997-09-02

    申请人： Avi Tepman ,  Gerald Zheyao Yin ,  Donald Olgado

    发明人： Avi Tepman ,  Gerald Zheyao Yin ,  Donald Olgado

    IPC分类号： H01L21/302 ,  B65G49/07 ,  H01L21/00 ,  H01L21/02 ,  H01L21/20 ,  H01L21/306 ,  H01L21/677

    CPC分类号： H01L21/67748 ,  H01L21/6719 ,  H01L21/67196 ,  H01L21/67751 ,  Y10S414/135 ,  Y10S414/139 ,  Y10S438/905 ,  Y10S438/907 ,  Y10S438/908

    摘要： A process chamber for semiconductor wafers is formed of multiple compartments. A first compartment is provided for supplying an isolated environment for processing the wafers, and a second compartment is provided, in selective communication with the first compartment, to load and unload wafers from the chamber. The wafer handling equipment is located in the second compartment to isolate it from the process environment, and thus form a clean, non-contaminating, environment for the wafer handling equipment. When the chamber must be cleaned, only the first compartment must be cleaned, as no processing occurs in the second chamber. Therefore, the entire first chamber may be removed for cleaning, and replaced with a clean first compartment to decrease chamber turnaround time during chamber cleaning operations.

    摘要翻译： 用于半导体晶片的处理室由多个隔室形成。 提供第一隔室以提供用于处理晶片的隔离环境，并且提供与第一隔室选择性连通的第二隔室，用于从腔室加载和卸载晶片。 晶片处理设备位于第二隔室中以将其与工艺环境隔离，并因此形成用于晶片处理设备的干净，无污染的环境。 当房间必须清洁时，只有第一个隔间必须被清洁，因为在第二个室中没有处理。 因此，可以将整个第一腔室移除以进行清洁，并且用清洁的第一隔室替换以减少室清洁操作期间的室周转时间。

    Compartnetalized substrate processing chamber
    32.
    发明授权
    Compartnetalized substrate processing chamber 失效
    基板处理室

    公开(公告)号：US5730801A

    公开(公告)日：1998-03-24

    申请号：US296043

    申请日：1994-08-23

    申请人： Avi Tepman ,  Gerald Zheyao Yin ,  Donald Olgado

    发明人： Avi Tepman ,  Gerald Zheyao Yin ,  Donald Olgado

    IPC分类号： H01L21/302 ,  B65G49/07 ,  H01L21/00 ,  H01L21/02 ,  H01L21/20 ,  H01L21/306 ,  H01L21/677 ,  C23C16/00

    CPC分类号： H01L21/67748 ,  H01L21/6719 ,  H01L21/67196 ,  H01L21/67751 ,  Y10S414/135 ,  Y10S414/139 ,  Y10S438/905 ,  Y10S438/907 ,  Y10S438/908

    摘要： A process chamber for semiconductor wafers is formed of multiple compartments. A first compartment is provided for supplying an isolated environment for processing the wafers, and a second compartment is provided, in selective communication with the first compartment, to load and unload wafers from the chamber. The wafer handling equipment is located in the second compartment to isolate it from the process environment, and thus form a clean, non-contaminating, environment for the wafer handling equipment. When the chamber must be cleaned, only the first compartment must be cleaned, as no processing occurs in the second chamber. Therefore, the entire first chamber may be removed for cleaning, and replaced with a clean first compartment to decrease chamber turnaround time during chamber cleaning operations.

    摘要翻译： 用于半导体晶片的处理室由多个隔室形成。 提供第一隔室以提供用于处理晶片的隔离环境，并且提供与第一隔室选择性连通的第二隔室，用于从腔室加载和卸载晶片。 晶片处理设备位于第二隔室中以将其与工艺环境隔离，并因此形成用于晶片处理设备的干净，无污染的环境。 当房间必须清洁时，只有第一个隔间必须被清洁，因为在第二个室中没有处理。 因此，可以将整个第一腔室移除以进行清洁，并且用清洁的第一隔室替换以减少室清洁操作期间的室周转时间。

    Gas injection slit nozzle for a plasma process reactor
    33.
    发明授权
    Gas injection slit nozzle for a plasma process reactor 失效
    用于等离子体处理反应器的气体注入狭缝喷嘴

    公开(公告)号：US5643394A

    公开(公告)日：1997-07-01

    申请号：US307888

    申请日：1994-09-16

    申请人： Dan Maydan ,  Steve S. Y. Mak ,  Donald Olgado ,  Gerald Zheyao Yin ,  Timothy D. Driscoll ,  Brian Shieh ,  James S. Papanu

    发明人： Dan Maydan ,  Steve S. Y. Mak ,  Donald Olgado ,  Gerald Zheyao Yin ,  Timothy D. Driscoll ,  Brian Shieh ,  James S. Papanu

    IPC分类号： H05H1/46 ,  C23C16/44 ,  C23C16/455 ,  C23F4/00 ,  H01J37/32 ,  H01L21/302 ,  H01L21/3065 ,  H05H1/00

    CPC分类号： C23C16/45574 ,  C23C16/45576 ,  C23C16/45587 ,  H01J37/3244 ,  H01J37/32449

    摘要： The invention is embodied in a gas injection apparatus for injecting gases into a plasma reactor vacuum chamber having a chamber housing, a pedestal holding a workpiece to be processed, means for applying RF energy into the chamber, the gas injection apparatus having a gas supply containing an etchant species in a gas, an opening in the chamber housing, a gas feed line from the supply to the opening in the chamber housing, and gas distribution apparatus near the opening in the chamber housing, the gas feed apparatus having at least one slit nozzle facing the interior of the chamber. In a preferred embodiment, the gas distribution apparatus includes a disk member surrounded by at least one annular member with a gap therebetween comprising the slit nozzle, the disk member and annular member blocking gas flow through the opening in the chamber housing. Preferably, each of the members of the gas distribution apparatus comprises a material at least nearly impervious to attack from the etchant species. In one example, each of the members of the gas distribution apparatus comprises one of ceramic, quartz, sapphire, polyimide or anodized aluminum and the gas feed line comprises stainless steel. Preferably, each of the members has its surface polished prior to assembly of the gas distribution apparatus.

    摘要翻译： 本发明体现在一种用于将气体注入等离子体反应器真空室的气体注入装置，其具有腔室壳体，保持要加工的工件的基座，用于将RF能量施加到腔室中的装置，该气体注入装置具有含有 气体中的蚀刻剂物质，腔室壳体中的开口，从供体到腔室中的开口的气体供给管线以及靠近腔室壳体中的开口的气体分配装置，气体供给装置具有至少一个狭缝 喷嘴面向腔室的内部。 在优选实施例中，气体分配装置包括由至少一个环形构件包围的盘构件，其间具有间隙，包括狭缝喷嘴，盘构件和环形构件阻挡气体流过腔室中的开口。 优选地，气体分配装置的每个构件包括至少几乎不受蚀刻剂物质侵蚀的材料。 在一个示例中，气体分配装置的每个构件包括陶瓷，石英，蓝宝石，聚酰亚胺或阳极氧化铝之一，气体供给管线包括不锈钢。 优选地，每个构件在气体分配装置的组装之前具有其表面抛光。

    System level in-situ integrated dielectric etch process particularly useful for copper dual damascene
    34.
    发明授权
    System level in-situ integrated dielectric etch process particularly useful for copper dual damascene 失效
    系统级原位集成电介质蚀刻工艺特别适用于铜双镶嵌

    公开(公告)号：US06793835B2

    公开(公告)日：2004-09-21

    申请号：US10280664

    申请日：2002-10-24

    申请人： Lee Luo ,  Claes H. Bjorkman ,  Brian Sy Yuan Shieh ,  Gerald Zheyao Yin

    发明人： Lee Luo ,  Claes H. Bjorkman ,  Brian Sy Yuan Shieh ,  Gerald Zheyao Yin

    IPC分类号： H01L21302

    CPC分类号： H01L21/67167 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/6719 ,  H01L21/67207 ,  H01L21/67213 ,  H01L21/6723 ,  H01L21/76807

    摘要： An integrated in situ etch process performed in a multichamber substrate processing system having first and second etching chambers. The process includes transferring a substrate having formed thereon in a downward direction a patterned photoresist mask, a dielectric layer, a stop layer and a feature in the substrate to be contacted into the first etching chamber to etch the dielectric layer. The substrate is then transferred from the first etching chamber to the second etching chamber under vacuum conditions and, in the second etching chamber, is exposed to an oxygen plasma or similar environment to strip away the photoresist mask deposited over the substrate. After the photoresist mask is stripped, the stop layer is etched through to the feature to be contacted in either the second or a third etching chamber of said multichamber substrate processing system. All three etching steps are performed in a system level in situ process so that the substrate is not exposed to an ambient between steps.

    摘要翻译： 在具有第一和第二蚀刻室的多室基板处理系统中执行的集成原位蚀刻工艺。 该工艺包括将在其上形成的衬底沿着向下的方向转印图案化的光致抗蚀剂掩模，介电层，停止层和衬底中的要接触第一蚀刻室的特征，以蚀刻电介质层。 然后在真空条件下将衬底从第一蚀刻室转移到第二蚀刻室，并且在第二蚀刻室中暴露于氧等离子体或类似环境以剥离沉积在衬底上的光致抗蚀剂掩模。 在剥离光致抗蚀剂掩模之后，将停止层蚀刻到要在多室基板处理系统的第二或第三蚀刻室中接触的特征。 所有三个蚀刻步骤都是在系统级原位工艺中进行的，因此基板不会在台阶之间暴露于环境中。

    Self-cleaning etch process
    35.
    发明授权
    Self-cleaning etch process 失效
    自清洁蚀刻工艺

    公开(公告)号：US06699399B1

    公开(公告)日：2004-03-02

    申请号：US09657793

    申请日：2000-09-08

    申请人： Xue-Yu Qian ,  Zhi-Wen Sun ,  Weinan Jiang ,  Arthur Y. Chen ,  Gerald Zheyao Yin ,  Ming-Hsun Yang ,  Ming-Hsun Kuo ,  David S. L. Mui ,  Jeffrey Chinn ,  Shaoher X. Pan ,  Xikun Wang

    发明人： Xue-Yu Qian ,  Zhi-Wen Sun ,  Weinan Jiang ,  Arthur Y. Chen ,  Gerald Zheyao Yin ,  Ming-Hsun Yang ,  Ming-Hsun Kuo ,  David S. L. Mui ,  Jeffrey Chinn ,  Shaoher X. Pan ,  Xikun Wang

    IPC分类号： C23F400

    CPC分类号： H01L21/02071 ,  Y10S438/905

    摘要： A process for etching a substrate 25 in an etching chamber 30, and simultaneously cleaning a thin, non-homogeneous, etch residue deposited on the surfaces of the walls 45 and components of the etching chamber 30. In the etching step, process gas comprising etchant gas is used to etch a substrate 25 in the etching chamber 30 thereby depositing etch residue inside the chamber 30. Cleaning gas is added to the process gas for a sufficient time and in a volumetric flow ratio that is sufficiently high, to react with and remove substantially all the etch residue deposited by the process gas. The present method advantageously cleans the etch residue in the chamber 30, during the etching process, and without use of separate cleaning, conditioning, and seasoning process steps.

    摘要翻译： 用于在蚀刻室30中蚀刻基板25并同时清洗沉积在壁45的表面上的薄的，非均匀的蚀刻残留物和蚀刻室30的部件的方法。在蚀刻步骤中，包括蚀刻剂的工艺气体 使用气体来蚀刻蚀刻室30中的衬底25，从而在腔室30内沉积蚀刻残留物。将清洁气体加入到工艺气体足够长的时间内，并以足够高的体积流量比与反应和去除 基本上所有由工艺气体沉积的蚀刻残留物。 本方法有利地在蚀刻过程期间清洁室30中的蚀刻残留物，并且不使用单独的清洁，调理和调味处理步骤。

    Treatment of etching chambers using activated cleaning gas
    36.
    发明授权
    Treatment of etching chambers using activated cleaning gas 失效
    使用活性清洁气体处理蚀刻室

    公开(公告)号：US06379575B1

    公开(公告)日：2002-04-30

    申请号：US08955181

    申请日：1997-10-21

    申请人： Gerald Zheyao Yin ,  Xue-Yu Qian ,  Patrick L. Leahey ,  Jonathan D. Mohn ,  Waiching Chow ,  Arthur Y. Chen ,  Zhi-Wen Sun ,  Brian K. Hatcher

    发明人： Gerald Zheyao Yin ,  Xue-Yu Qian ,  Patrick L. Leahey ,  Jonathan D. Mohn ,  Waiching Chow ,  Arthur Y. Chen ,  Zhi-Wen Sun ,  Brian K. Hatcher

    IPC分类号： H01L21302

    CPC分类号： C04B41/009 ,  B08B7/0035 ,  C04B41/5346 ,  C04B41/91 ,  C23C16/4405 ,  H01J37/32862 ,  Y10S438/905 ,  C04B41/0027 ,  C04B41/0045 ,  C04B35/00

    摘要： An apparatus 20 and process for treating and conditioning an etching chamber 30, and cleaning a thin, non-homogeneous, etch residue on the walls 45 and components of the etching chamber 30. In the etching step, a substrate 25 is etched in the etching chamber 30 to deposit a thin etch residue layer on the surfaces of the walls and components in the chamber. In the cleaning step, cleaning gas is introduced into a remote chamber 40 adjacent to the etching chamber 30, and microwave or RF energy is applied inside the remote chamber to form an activated cleaning gas. A short burst of activated cleaning gas at a high flow rate is introduced into the etching chamber 30 to clean the etch residue on the walls 45 and components of the etching chamber. The method is particularly useful for cleaning etch residue that is chemically adhered to ceramic surfaces in the chamber, for example surfaces comprising aluminum nitride, boron carbide, boron nitride, diamond, silicon oxide, silicon carbide, silicon nitride, titanium oxide, titanium carbide, yttrium oxide, zirconium oxide, or mixtures thereof.

    摘要翻译： 一种用于处理和调理蚀刻室30以及清洁壁45和蚀刻室30的部件上的薄的非均匀蚀刻残余物的方法20。在蚀刻步骤中，在蚀刻中蚀刻衬底25 室30，以在室中的壁和部件的表面上沉积薄的蚀刻残留层。 在清洁步骤中，将清洁气体引入邻近蚀刻室30的远程室40中，并且在远程室内部施加微波或RF能量以形成活化的清洁气体。 将高速流动的短时间的活性清洁气体引入蚀刻室30中以清洁壁45上的蚀刻残留物和蚀刻室的部件。 该方法特别可用于清洁化学附着在室中的陶瓷表面的蚀刻残渣，例如包括氮化铝，碳化硼，氮化硼，金刚石，氧化硅，碳化硅，氮化硅，氧化钛，碳化钛， 氧化钇，氧化锆或其混合物。

    RF plasma method
    37.
    发明授权
    RF plasma method 失效
    射频等离子体法

    公开(公告)号：US06270687B1

    公开(公告)日：2001-08-07

    申请号：US09564042

    申请日：2000-04-27

    申请人： Yan Ye ,  Donald Olgado ,  Avi Tepman ,  Diana Ma ,  Gerald Zheyao Yin ,  Peter Loewenhardt ,  Jeng Hwang ,  Steve S. Y. Mak

    发明人： Yan Ye ,  Donald Olgado ,  Avi Tepman ,  Diana Ma ,  Gerald Zheyao Yin ,  Peter Loewenhardt ,  Jeng Hwang ,  Steve S. Y. Mak

    IPC分类号： B44C122

    CPC分类号： H01J37/32477 ,  H01J37/321

    摘要： An RF plasma etch reactor having an etch chamber with electrically conductive walls and a protective layer forming the portion of the walls facing the interior of the chamber. The protective layer prevents sputtering of material from the chamber walls by a plasma formed within the chamber. The etch reactor also has an inductive coil antenna disposed within the etch chamber which is used to generate the plasma by inductive coupling. Like the chamber walls, the inductive coil antenna is constructed to prevent sputtering of the material making up the antenna by the plasma. The coil antenna can take on any configuration (e.g. location, shape, orientation) that is necessary to achieve a desired power deposition pattern within the chamber. Examples of potential coil antenna configurations for achieving the desired power deposition pattern include constructing the coil antenna with a unitary or a segmented structure. The segmented structure involves the use of at least two coil segments wherein each segment is electrically isolated from the other segments and connected to a separate RF power signal. The unitary coil antenna or each of the coil segments can have a planar shape, a cylindrical shape, a truncated conical shape, a dome shape, or any combination thereof. The conductive walls are electrically grounded to serve as an electrical ground (i.e. anode) for a workpiece-supporting pedestal which is connected to a source of RF power to create a bias voltage at the surface of the workpiece.

    摘要翻译： RF等离子体蚀刻反应器具有具有导电壁的蚀刻室和形成面向腔室内部的部分壁的保护层。 保护层防止在室内形成的等离子体从室壁溅射材料。 蚀刻反应器还具有设置在蚀刻室内的感应线圈天线，其用于通过感应耦合产生等离子体。 类似于室壁，感应线圈天线被构造成防止由等离子体溅射构成天线的材料。 线圈天线​​可以承受在室内实现期望的功率沉积图案所必需的任何配置（例如位置，形状，取向）。 用于实现期望的功率沉积模式的电位线圈天线配置的示例包括以整体或分段结构构造线圈天线。 分段结构涉及使用至少两个线圈段，其中每个段与其它段电隔离并连接到单独的RF功率信号。 单线圈天线或每个线圈段可以具有平面形状，圆柱形，截顶圆锥形，圆顶形或其任何组合。 导电壁电接地以用作工件支撑基座的电接地（即阳极），工件支撑基座连接到RF功率源，以在工件的表面产生偏置电压。

    Gas injection slit nozzle for a plasma process reactor
    40.
    发明授权
    Gas injection slit nozzle for a plasma process reactor 失效
    用于等离子体处理反应器的气体注入狭缝喷嘴

    公开(公告)号：US5885358A

    公开(公告)日：1999-03-23

    申请号：US682803

    申请日：1996-07-09

    申请人： Dan Maydan ,  Steve S. Y. Mak ,  Donald Olgado ,  Gerald Zheyao Yin ,  Timothy D. Driscoll ,  James S. Papanu ,  Avi Tepman

    发明人： Dan Maydan ,  Steve S. Y. Mak ,  Donald Olgado ,  Gerald Zheyao Yin ,  Timothy D. Driscoll ,  James S. Papanu ,  Avi Tepman

    IPC分类号： C23C16/44 ,  C23C16/455 ,  C23C16/50 ,  H01J37/32 ,  H01L21/02 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065 ,  C23C16/00

    CPC分类号： H01J37/321 ,  C23C16/455 ,  H01J37/3244

    摘要： A gas injection system for injecting gases into a plasma reactor having a vacuum chamber with a sidewall, a pedestal for holding a semiconductor wafer to be processed, and a RF power applicator for applying RF power into the chamber. The gas injection system includes at least one gas supply containing gas, a gas distribution apparatus which has at least one slotted aperture facing the interior of the chamber, and one or more gas feed lines connecting the gas supply or supplies to the gas distribution apparatus. A preferred embodiment of a radial gas distribution apparatus in accordance with the present invention is disposed in the chamber sidewall and includes plural gas distribution nozzles each with a slotted aperture facing an interior of the chamber. Gas feed lines are employed to respectively connect each gas distribution nozzle to separate ones of the gas supplies.

    摘要翻译： 一种用于将气体注入等离子体反应器的气体注入系统，所述等离子体反应器具有具有侧壁的真空室，用于保持要处理的半导体晶片的基座和用于将RF功率施加到所述室中的RF功率施加器。 气体注入系统包括至少一个含气体的气体供给装置，具有面向腔室内部的至少一个开口孔的气体分配装置以及将气体供给或供给部连接到气体分配装置的一个或多个气体供给管线。 根据本发明的径向气体分配装置的优选实施例设置在室侧壁中，并且包括多个气体分配喷嘴，每个气体分配喷嘴均具有面向腔室内部的开口孔。 采用气体供给管线分别连接每个气体分配喷嘴以分离气体供应源。