公开(公告)号：US20130122661A1

公开(公告)日：2013-05-16

申请号：US13736627

申请日：2013-01-08

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Timothy H. Daubenspeck ,  Jeffrey P. Gambino ,  Christopher D. Muzzy ,  Marie-Claude Paquet ,  Wolfgang Sauter ,  Timothy D. Sullivan

IPC: H01L21/56

CPC classification number: H01L21/56 ,  H01L21/563 ,  H01L23/49816 ,  H01L24/743 ,  H01L24/97 ,  H01L29/0657 ,  H01L2224/73203 ,  H01L2224/73204 ,  H01L2224/97 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2224/83 ,  H01L2224/81 ,  H01L2924/00

Abstract: Underfill flow guide structures and methods of using the same are provided with a module. In particular the underfill flow guide structures are integrated with a substrate and are configured to prevent air entrapment from occurring during capillary underfill processes.

Abstract translation: 底部填充流动引导结构及其使用方法具有模块。 特别地，底部填充流动引导结构与基底一体化并且被构造成防止在毛细管底部填充过程期间发生空气滞留。

公开(公告)号：US20200083188A1

公开(公告)日：2020-03-12

申请号：US16576380

申请日：2019-09-19

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Charles L. Arvin ,  Jeffrey P. Gambino ,  Christopher D. Muzzy ,  Wolfgang Sauter

IPC: H01L23/00

Abstract: A pillar-type connection includes a first conductive layer that includes a hollow core. A second conductive layer is connected to the first conductive layer defining a conductive pillar that includes a top surface defining a recess aligned with the hollow core.

公开(公告)号：US10570527B2

公开(公告)日：2020-02-25

申请号：US16012234

申请日：2018-06-19

Applicant: International Business Machines Corporation

Inventor： Charles L. Arvin ,  Christopher D. Muzzy

IPC: C25D21/14 ,  C25D17/00 ,  C25D21/18 ,  C25D21/06 ,  C25D3/38

Abstract: A chemical bath system includes a reactor tank configured to store a chemical bath solution including at least one organic element, and an organics removing chamber assembly. The organics removing chamber assembly includes at least one sub-chamber that delivers the chemical bath solution from a high-pressure section of a bath circuit to a low-pressure section. The organics removing chamber assembly modifies an amount of the at least one organic element as the chemical bath solution flows therethrough. The chemical bath system further includes an analysis/dosing controller. The analysis/dosing controller outputs a control signal that controls the organics removing chamber assembly to modify the amount of the at least one organic element in the chemical bath solution based on a comparison between an actual amount of the at least one organic element in the chemical bath solution and a desired amount of the at least one organic element.

公开(公告)号：US20190164921A1

公开(公告)日：2019-05-30

申请号：US16263318

申请日：2019-01-31

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Charles L. Arvin ,  Jeffrey P. Gambino ,  Christopher D. Muzzy ,  Wolfgang Sauter

IPC: H01L23/00

CPC classification number: H01L24/13 ,  H01L24/03 ,  H01L24/11 ,  H01L24/16 ,  H01L24/81 ,  H01L2224/0345 ,  H01L2224/0401 ,  H01L2224/05 ,  H01L2224/05166 ,  H01L2224/05187 ,  H01L2224/05647 ,  H01L2224/10126 ,  H01L2224/11001 ,  H01L2224/11462 ,  H01L2224/1147 ,  H01L2224/13011 ,  H01L2224/13019 ,  H01L2224/13026 ,  H01L2224/13082 ,  H01L2224/13083 ,  H01L2224/13084 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/16227 ,  H01L2224/16238 ,  H01L2224/81141 ,  H01L2224/81143 ,  H01L2224/81815 ,  H01L2924/01029 ,  H01L2924/381 ,  H01L2924/00014 ,  H01L2924/04941 ,  H01L2924/0496 ,  H01L2924/01074 ,  H01L2924/01024 ,  H01L2924/00012 ,  H01L2924/014 ,  H01L2924/01027

Abstract: A pillar-type connection includes a first conductive layer that includes a hollow core. A second conductive layer is connected to the first conductive layer defining a conductive pillar that includes a top surface defining a recess aligned with the hollow core. A conductive via terminates at a top surface of the first conductive layer.

公开(公告)号：US10204877B2

公开(公告)日：2019-02-12

申请号：US15899755

申请日：2018-02-20

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Charles L. Arvin ,  Jeffrey P. Gambino ,  Charles F. Musante ,  Christopher D. Muzzy ,  Wolfgang Sauter

IPC: H01L23/00 ,  C22C21/00

Abstract: A method of manufacturing a bond pad structure may include depositing an aluminum-copper (Al—Cu) layer over a dielectric layer; and depositing an aluminum-chromium (Al—Cr) layer directly over the Al—Cu layer.

公开(公告)号：US10170446B2

公开(公告)日：2019-01-01

申请号：US15869673

申请日：2018-01-12

Applicant: International Business Machines Corporation

Inventor： Charles L. Arvin ,  Christopher D. Muzzy ,  Wolfgang Sauter

IPC: H01L21/44 ,  H01L23/00 ,  H01L21/56 ,  H01L21/48 ,  H01L21/52 ,  B23K35/26 ,  B23K35/30 ,  B23K35/02

Abstract: A method forming an interconnect structure includes depositing a first solder bump on a chip; depositing a second solder bump on a laminate, the second solder bump including a nickel copper colloid surrounded by a nickel or copper shell and suspended in a tin-based solder; aligning the chip with the laminate; performing a first reflow process to join the chip to the laminate; depositing an underfill material around the first solder bump and the second solder bump; and performing a second reflow process at a temperature that is lower than the first reflow process to convert the first solder bump and the second solder bump to an all intermetallic interconnect; wherein depositing the underfill material is performed before or after performing the second reflow process.

公开(公告)号：US20180298517A1

公开(公告)日：2018-10-18

申请号：US16012234

申请日：2018-06-19

Applicant: International Business Machines Corporation

Inventor： Charles L. Arvin ,  Christopher D. Muzzy

IPC: C25D21/14 ,  C25D21/18 ,  C25D17/00

Abstract: A chemical bath system includes a reactor tank configured to store a chemical bath solution including at least one organic element, and an organics removing chamber assembly. The organics removing chamber assembly includes at least one sub-chamber that delivers the chemical bath solution from a high-pressure section of a bath circuit to a low-pressure section. The organics removing chamber assembly modifies an amount of the at least one organic element as the chemical bath solution flows therethrough. The chemical bath system further includes an analysis/dosing controller. The analysis/dosing controller outputs a control signal that controls the organics removing chamber assembly to modify the amount of the at least one organic element in the chemical bath solution based on a comparison between an actual amount of the at least one organic element in the chemical bath solution and a desired amount of the at least one organic element.

公开(公告)号：US20180158797A1

公开(公告)日：2018-06-07

申请号：US15869673

申请日：2018-01-12

Applicant: International Business Machines Corporation

Inventor： Charles L. Arvin ,  Christopher D. Muzzy ,  Wolfgang Sauter

IPC: H01L23/00 ,  H01L21/52 ,  H01L21/56 ,  H01L21/48

CPC classification number: H01L24/81 ,  B23K35/025 ,  B23K35/262 ,  B23K35/302 ,  B23K35/3033 ,  H01L21/4853 ,  H01L21/52 ,  H01L21/563 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/17 ,  H01L2224/0401 ,  H01L2224/05572 ,  H01L2224/05666 ,  H01L2224/1132 ,  H01L2224/11462 ,  H01L2224/1147 ,  H01L2224/11849 ,  H01L2224/13017 ,  H01L2224/13022 ,  H01L2224/13083 ,  H01L2224/13111 ,  H01L2224/13139 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13211 ,  H01L2224/13347 ,  H01L2224/13355 ,  H01L2224/13447 ,  H01L2224/13455 ,  H01L2224/13541 ,  H01L2224/13647 ,  H01L2224/13655 ,  H01L2224/16237 ,  H01L2224/16238 ,  H01L2224/16503 ,  H01L2224/16507 ,  H01L2224/17505 ,  H01L2224/73204 ,  H01L2224/81011 ,  H01L2224/81024 ,  H01L2224/8112 ,  H01L2224/81193 ,  H01L2224/81211 ,  H01L2224/8181 ,  H01L2224/81815 ,  H01L2224/8191 ,  H01L2224/81911 ,  H01L2924/0132 ,  H01L2924/01074 ,  H01L2924/00014 ,  H01L2924/014 ,  H01L2924/01029 ,  H01L2924/01028 ,  H01L2924/00012

Abstract: A method forming an interconnect structure includes depositing a first solder bump on a chip; depositing a second solder bump on a laminate, the second solder bump including a nickel copper colloid surrounded by a nickel or copper shell and suspended in a tin-based solder; aligning the chip with the laminate; performing a first reflow process to join the chip to the laminate; depositing an underfill material around the first solder bump and the second solder bump; and performing a second reflow process at a temperature that is lower than the first reflow process to convert the first solder bump and the second solder bump to an all intermetallic interconnect; wherein depositing the underfill material is performed before or after performing the second reflow process.

公开(公告)号：US20180112324A1

公开(公告)日：2018-04-26

申请号：US15335186

申请日：2016-10-26

Applicant: International Business Machines Corporation

Inventor： Charles L. Arvin ,  Christopher D. Muzzy

IPC: C25D21/14 ,  C25D17/00

Abstract: A chemical bath system includes a reactor tank configured to store a chemical bath solution including at least one organic element, and an organics removing chamber assembly. The organics removing chamber assembly includes at least one sub-chamber that delivers the chemical bath solution from a high-pressure section of a bath circuit to a low-pressure section. The organics removing chamber assembly modifies an amount of the at least one organic element as the chemical bath solution flows therethrough. The chemical bath system further includes an analysis/dosing controller. The analysis/dosing controller outputs a control signal that controls the organics removing chamber assembly to modify the amount of the at least one organic element in the chemical bath solution based on a comparison between an actual amount of the at least one organic element in the chemical bath solution and a desired amount of the at least one organic element.

公开(公告)号：US09799618B1

公开(公告)日：2017-10-24

申请号：US15291767

申请日：2016-10-12

Applicant: International Business Machines Corporation

Inventor： Charles L. Arvin ,  Christopher D. Muzzy

IPC: H01L23/498 ,  H01L23/00 ,  H01L21/66

CPC classification number: H01L24/06 ,  H01L22/20 ,  H01L23/49816 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L2224/0401 ,  H01L2224/05113 ,  H01L2224/05155 ,  H01L2224/05647 ,  H01L2224/05666 ,  H01L2224/0603 ,  H01L2224/06131 ,  H01L2224/06132 ,  H01L2224/06134 ,  H01L2224/06177 ,  H01L2224/11001 ,  H01L2224/1145 ,  H01L2224/11462 ,  H01L2224/116 ,  H01L2224/1161 ,  H01L2224/13026 ,  H01L2224/13028 ,  H01L2224/13078 ,  H01L2224/13082 ,  H01L2224/13083 ,  H01L2224/131 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13166 ,  H01L2224/13184 ,  H01L2224/13562 ,  H01L2224/136 ,  H01L2224/13639 ,  H01L2224/16227 ,  H01L2224/81815 ,  H01L2924/07025 ,  H01L2924/014 ,  H01L2924/00014 ,  H01L2924/00012

Abstract: Embodiments are directed to a method of forming a semiconductor chip package and resulting structures having a mixed under-bump metallization (UBM) size and pitch on a single die. A first set of UBMs having a first total plateable surface area is formed on a first region of a die. A second set of UBMs having an equal total plateable surface area is formed on a second region of the die. A solder bump having a calculated solder height is applied to a plateable surface of each UBM. The solder height is calculated such that a volume of solder in the first region is equal to a volume of solder in the second region.