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公开(公告)号:US11201451B2
公开(公告)日:2021-12-14
申请号:US16252334
申请日:2019-01-18
申请人: IQE plc
发明人: Rich Hammond , Rodney Pelzel , Drew Nelson , Andrew Clark , David Cheskis , Michael Lebby
IPC分类号: H01S5/00 , H01S5/02 , H01S5/183 , H01S5/42 , H01S5/10 , H01S5/026 , H01S5/40 , H01L33/10 , H01S5/34 , G02B5/08
摘要: Embodiments described herein provide a layered structure that comprises a substrate that includes a first porous multilayer of a first porosity, an active quantum well capping layer epitaxially grown over the first porous multilayer, and a second porous multilayer of the first porosity over the active quantum well capping layer, where the second porous multilayer aligns with the first porous multilayer.
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公开(公告)号:US11005231B2
公开(公告)日:2021-05-11
申请号:US16198391
申请日:2018-11-21
申请人: IQE plc
发明人: Andrew Clark , Rodney Pelzel , Andrew Johnson , Andrew Martin Joel , Aidan John Daly , Adam Christopher Jandl
摘要: Systems and methods are described herein to grow a layered structure. The layered structure comprises a first germanium substrate layer having a first lattice constant, a second layer that has a second lattice constant and is epitaxially grown over the first germanium substrate layer, wherein the second layer has a composite of a first constituent and a second constituent, and has a first ratio between the first constituent and the second constituent, and a third layer that has a third lattice constant and is epitaxially grown over the second layer, wherein the third layer has a composite of a third constituent and a fourth constituent, and has a second ratio between the third constituent and the fourth constituent, wherein the first ratio and the second ratio are selected such that the first lattice constant is between the second lattice constant and the third lattice constant.
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公开(公告)号:US20210020436A1
公开(公告)日:2021-01-21
申请号:US16742827
申请日:2020-01-14
申请人: IQE plc
发明人: Richard Hammond , Drew Nelson , Alan Gott , Rodney Pelzel , Andrew Clark
摘要: A layered structure for semiconductor application is described herein. The layered structure includes a starting material and a fully depleted porous layer formed over the starting material with high resistivity. In some embodiments, the layered structure further includes epitaxial layer grown over the fully depleted porous layer. Additionally, a process of making the layered structure including forming the fully depleted porous layer and epitaxial layer grown over the porous layer is described herein.
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公开(公告)号:US10605987B2
公开(公告)日:2020-03-31
申请号:US16252474
申请日:2019-01-18
申请人: IQE plc
发明人: Andrew Clark , Rich Hammond , Rytis Dargis , Michael Lebby , Rodney Pelzel
IPC分类号: G02B6/122 , H01L21/02 , H01S5/026 , H01L21/8258 , G02B6/13 , H01L29/04 , H01L29/20 , H01S5/02 , H01L27/15 , G02B6/12 , H01L29/778
摘要: Systems and methods describe growing RE-based integrated photonic and electronic layered structures on a single substrate. The layered structure comprises a substrate, an epi-twist rare earth oxide layer over a first region of the substrate, and a rare earth pnictide layer over a second region of the substrate, wherein the first region and the second region are non-overlapping.
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公开(公告)号:US20190027574A1
公开(公告)日:2019-01-24
申请号:US16138629
申请日:2018-09-21
申请人: IQE plc
发明人: Rytis Dargis , Richard Hammond , Andrew Clark , Rodney Pelzel
IPC分类号: H01L29/51 , H01L41/047 , H01L29/45 , H01L21/285
CPC分类号: H01L29/517 , H01L21/02483 , H01L21/02491 , H01L21/02502 , H01L21/02507 , H01L21/0254 , H01L21/28017 , H01L21/28185 , H01L21/28202 , H01L21/28556 , H01L21/28575 , H01L29/452 , H01L29/456 , H01L29/518 , H01L29/78681 , H01L41/0477
摘要: The structures and methods disclosed herein include changing composition of a metal alloy layer in an epitaxial electrode material to achieve tunable work functions for the electrode. In one example, the tunable work function is achieved using a layered structure, in which a crystalline rare earth oxide (REO) layer is epitaxially over a substrate or semiconductor, and a metal layer is over the crystalline REO layer. A semiconductor layer is thus in turn epitaxially grown over the metal layer, with a metal alloy layer over the semiconductor layer such that the ratio of constituents in the metal alloy is used to tune the work function of the metal layer.
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公开(公告)号:US20180138284A1
公开(公告)日:2018-05-17
申请号:US15712002
申请日:2017-09-21
申请人: IQE, plc
发明人: Rodney Pelzel , Andrew Clark , Rytis Dargis , Patrick Chin , Michael Lebby
CPC分类号: H01L29/511 , H01L21/02123 , H01L21/02178 , H01L21/02293 , H01L21/02381 , H01L21/02414 , H01L21/0242 , H01L21/02433 , H01L21/02483 , H01L21/02488 , H01L21/02491 , H01L21/02502 , H01L21/02505 , H01L21/02521 , H01L29/517
摘要: Systems and methods are described herein to include an epitaxial metal layer between a rare earth oxide and a semiconductor layer. Systems and methods are described to grow a layered structure, comprising a substrate, a first rare earth oxide layer epitaxially grown over the substrate, a first metal layer epitaxially grown over the rare earth oxide layer, and a first semiconductor layer epitaxially grown over the first metal layer.
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公开(公告)号:US20170353002A1
公开(公告)日:2017-12-07
申请号:US15612355
申请日:2017-06-02
申请人: IQE, plc
发明人: Andrew Clark , Rytis Dargis , Michael Lebby , Rodney Pelzel
CPC分类号: H01L21/02491 , H01L21/02381 , H01L21/02389 , H01L21/02439 , H01L21/02483 , H01L21/02502 , H01L21/02505 , H01L21/0251 , H01L21/02532 , H01L21/02543 , H01L21/02546 , H01L21/0262 , H01L24/32 , H01L24/94 , H01L29/2003 , H01L29/205 , H01L29/267 , H01L2224/29082 , H01L2224/291 , H01L2224/29193 , H01L2224/32145 , H01L2924/01033 , H01L2924/01064 , H01L2924/01068 , H01L2924/0505 , H01L2924/0525 , H01L2924/0545 , H01L2924/10253 , H01L2924/10335 , H01S3/09 , H01S3/1603 , H01S3/1605 , H01S3/1611 , H01S3/1628 , H01S3/1655 , H01S5/30 , H01S5/3031 , H01S2301/17
摘要: Systems and methods described herein may include a first semiconductor layer with a first lattice constant, a rare earth pnictide buffer epitaxially grown over the first semiconductor, wherein a first region of the rare earth pnictide buffer adjacent to the first semiconductor has a net strain that is less than 1%, a second semiconductor layer epitaxially grown over the rare earth pnictide buffer, wherein a second region of the rare earth pnictide buffer adjacent to the second semiconductor has a net strain that is a desired strain, and wherein the rare earth pnictide buffer may comprise one or more rare earth elements and one or more Group V elements. In some examples, the desired strain is approximately zero.
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