Strain-balanced semiconductor structure

    公开(公告)号:US11005231B2

    公开(公告)日:2021-05-11

    申请号:US16198391

    申请日:2018-11-21

    申请人: IQE plc

    摘要: Systems and methods are described herein to grow a layered structure. The layered structure comprises a first germanium substrate layer having a first lattice constant, a second layer that has a second lattice constant and is epitaxially grown over the first germanium substrate layer, wherein the second layer has a composite of a first constituent and a second constituent, and has a first ratio between the first constituent and the second constituent, and a third layer that has a third lattice constant and is epitaxially grown over the second layer, wherein the third layer has a composite of a third constituent and a fourth constituent, and has a second ratio between the third constituent and the fourth constituent, wherein the first ratio and the second ratio are selected such that the first lattice constant is between the second lattice constant and the third lattice constant.