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公开(公告)号:US20220028788A1
公开(公告)日:2022-01-27
申请号:US17492476
申请日:2021-10-01
申请人: Intel Corporation
发明人: Srinivas V. PIETAMBARAM , Tarek IBRAHIM , Kristof DARMAWIKARTA , Rahul N. MANEPALLI , Debendra MALLIK , Robert L. SANKMAN
IPC分类号: H01L23/538 , H01L23/48 , H01L23/498 , H01L23/00 , H01L25/065
摘要: A glass substrate houses an embedded multi-die interconnect bridge that is part of a semiconductor device package. Through-glass vias communicate to a surface for mounting on a semiconductor package substrate.
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公开(公告)号:US20200350251A1
公开(公告)日:2020-11-05
申请号:US16931690
申请日:2020-07-17
申请人: Intel Corporation
IPC分类号: H01L23/538 , H01L21/48 , H01L23/498 , H01L23/00 , H01L25/065
摘要: Electrical interconnect bridge technology is disclosed. An electrical interconnect bridge can include a bridge substrate formed of a mold compound material. The electrical interconnect bridge can also include a plurality of routing layers within the bridge substrate, each routing layer having a plurality of fine line and space (FLS) traces. In addition, the electrical interconnect bridge can include a via extending through the substrate and electrically coupling at least one of the FLS traces in one of the routing layers to at least one of the FLS traces in another of the routing layers.
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公开(公告)号:US20200266184A1
公开(公告)日:2020-08-20
申请号:US16649923
申请日:2017-12-29
申请人: Intel Corporation
发明人: Srinivas PIETAMBARAM , Robert Alan MAY , Kristof DARMAWIKARTA , Hiroki TANAKA , Rahul N. MANEPALLI , Sri Ranga Sai BOYAPATI
IPC分类号: H01L25/00 , H01L23/538 , H01L23/498 , H01L21/48 , H01L25/065
摘要: Techniques for a patch to couple one or more surface dies to an interposer or motherboard are provided. In an example, the patch can include multiple embedded dies. In an example, a microelectronic device can be formed to include a patch on an interposer, where the patch can include multiple embedded dies and each die can have a different thickness.
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34.
公开(公告)号:US20190279935A1
公开(公告)日:2019-09-12
申请号:US16349932
申请日:2016-12-29
申请人: Intel Corporation
IPC分类号: H01L23/532 , H01L23/522 , H01L25/065 , H05K1/09 , H05K1/18 , H01L23/00
摘要: Semiconductor packages including package substrates having non-homogeneous dielectric layers, and methods of fabricating such semiconductor packages, are described. In an example, a semiconductor package substrate includes a dielectric layer having a resin-rich region, e.g., a resin-rich sublayer, and a filler-rich region, e.g., a filler-rich sublayer. The sublayers may contain respective mixtures of an organic resin material and an inorganic filler material. The filler-rich sublayer may have a higher density of the inorganic filler material than the resin-rich sublayer. A density of the inorganic filler material may be lesser near a top surface of 0 the dielectric layer in which an electrical interconnect is embedded. The electrical interconnect may have a greater adhesion affinity to the organic resin material than the inorganic filler material, and thus, the electrical interconnect may readily attach to the functionally-graded dielectric layer.
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公开(公告)号:US20150284503A1
公开(公告)日:2015-10-08
申请号:US14746750
申请日:2015-06-22
申请人: INTEL CORPORATION
发明人: Dingying XU , Nisha ANANTHAKRISHNAN , Hong DONG , Rahul N. MANEPALLI , Nachiket R. RARAVIKAR , Gregory S. CONSTABLE
CPC分类号: C08G59/02 , C07F7/0838 , C08G59/3254 , C08G59/38 , C08L23/0884 , H01L21/563 , H01L23/293 , H01L24/16 , H01L24/73 , H01L24/92 , H01L2224/05568 , H01L2224/05573 , H01L2224/16225 , H01L2224/16227 , H01L2224/73204 , H01L2224/92125 , H01L2924/00014 , H01L2924/14 , H01L2924/15311 , H01L2924/3512 , Y10T428/31515 , H01L2924/00 , H01L2224/05599
摘要: Underfill materials for fabricating electronic devices are described. One embodiment includes an underfill composition including an epoxy mixture, an amine hardener component, and a filler. The epoxy mixture may include a first epoxy comprising a bisphenol epoxy, a second epoxy comprising a multifunctional epoxy, and a third epoxy comprising an aliphatic epoxy, the aliphatic epoxy comprising a silicone epoxy. The first, second, and third epoxies each have a different chemical structure. Other embodiments are described and claimed.
摘要翻译: 描述了用于制造电子设备的底部填充材料。 一个实施方案包括含有环氧混合物,胺硬化剂组分和填料的底部填充组合物。 环氧混合物可包括包含双酚环氧树脂的第一环氧树脂,包含多官能环氧树脂的第二环氧树脂和包含脂族环氧树脂的第三环氧树脂,所述脂族环氧树脂包含硅氧烷环氧树脂。 第一,第二和第三环氧树脂各自具有不同的化学结构。 描述和要求保护其他实施例。
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