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1.
公开(公告)号:US20150284503A1
公开(公告)日:2015-10-08
申请号:US14746750
申请日:2015-06-22
Applicant: INTEL CORPORATION
Inventor: Dingying XU , Nisha ANANTHAKRISHNAN , Hong DONG , Rahul N. MANEPALLI , Nachiket R. RARAVIKAR , Gregory S. CONSTABLE
CPC classification number: C08G59/02 , C07F7/0838 , C08G59/3254 , C08G59/38 , C08L23/0884 , H01L21/563 , H01L23/293 , H01L24/16 , H01L24/73 , H01L24/92 , H01L2224/05568 , H01L2224/05573 , H01L2224/16225 , H01L2224/16227 , H01L2224/73204 , H01L2224/92125 , H01L2924/00014 , H01L2924/14 , H01L2924/15311 , H01L2924/3512 , Y10T428/31515 , H01L2924/00 , H01L2224/05599
Abstract: Underfill materials for fabricating electronic devices are described. One embodiment includes an underfill composition including an epoxy mixture, an amine hardener component, and a filler. The epoxy mixture may include a first epoxy comprising a bisphenol epoxy, a second epoxy comprising a multifunctional epoxy, and a third epoxy comprising an aliphatic epoxy, the aliphatic epoxy comprising a silicone epoxy. The first, second, and third epoxies each have a different chemical structure. Other embodiments are described and claimed.
Abstract translation: 描述了用于制造电子设备的底部填充材料。 一个实施方案包括含有环氧混合物,胺硬化剂组分和填料的底部填充组合物。 环氧混合物可包括包含双酚环氧树脂的第一环氧树脂,包含多官能环氧树脂的第二环氧树脂和包含脂族环氧树脂的第三环氧树脂,所述脂族环氧树脂包含硅氧烷环氧树脂。 第一,第二和第三环氧树脂各自具有不同的化学结构。 描述和要求保护其他实施例。
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公开(公告)号:US20190267306A1
公开(公告)日:2019-08-29
申请号:US16343703
申请日:2016-12-07
Applicant: Intel Corporation
Inventor: Nachiket R. RARAVIKAR , Ravindranath V. MAHAJAN , Robert L. SANKMAN , James C. MATAYABAS, Jr. , Ken P. HACKENBERG , Nayandeep K. MAHANTA , David D. OLMOZ
IPC: H01L23/373 , H01L23/42 , H01L23/367
Abstract: In some embodiments a semiconductor die package includes a package substrate, a plurality of dies each attached to the package substrate, a layer of a thermally conducting sintered paste over the top of each die, a layer of flexible polymer thermal interface material over the sintered paste, and a heat spreader over and thermally connected to the polymer thermal interface material.
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公开(公告)号:US20210082798A1
公开(公告)日:2021-03-18
申请号:US16575307
申请日:2019-09-18
Applicant: Intel Corporation
Inventor: Xiao LU , Jiongxin LU , Christopher COMBS , Alexander HUETTIS , John HARPER , Jieping ZHANG , Nachiket R. RARAVIKAR , Pramod MALATKAR , Steven A. KLEIN , Carl DEPPISCH , Mohit SOOD
IPC: H01L23/498 , B23K3/06 , H01L23/538
Abstract: Embodiments disclosed herein include electronic packages. In an embodiment, the electronic package comprises a first substrate; a second substrate; and an array of interconnects electrically coupling the first substrate to the second substrate. In an embodiment, the array of interconnects comprises first interconnects, wherein the first interconnects have a first volume and a first material composition, and second interconnects, wherein the second interconnects have a second volume and a second material composition, and wherein the first volume is different than the second volume and/or the first material composition is different than the second material composition.
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4.
公开(公告)号:US20190043772A1
公开(公告)日:2019-02-07
申请号:US16075120
申请日:2016-04-02
Applicant: Intel Corporation
Inventor: Purushotham Kaushik MUTHUR SRINATH , Pramod MALATKAR , Sairam AGRAHARAM , Chandra M. JHA , Arnab CHOUDHURY , Nachiket R. RARAVIKAR
IPC: H01L23/26 , H01L23/433
Abstract: In accordance with disclosed embodiments, there are provided methods, systems, and apparatuses for implementing a thermal solution for 3D packaging. For instance, in accordance with one embodiment, there is an apparatus having therein: a substrate layer having electrical traces therein; a first layer functional silicon die electrically interfaced to the electrical traces of the substrate layer, the first layer functional silicon die having a first thermal pad integrated thereupon; a second layer functional silicon die positioned above the first layer functional silicon die, the second layer functional silicon die having a second thermal pad integrated thereupon; and a conductivity layer positioned between the first layer functional silicon die and the second layer functional silicon die, wherein the conductivity layer is to: (i) electrically join the second layer functional silicon die to the first layer functional silicon die and (ii) bond the first thermal pad of the first layer functional silicon die to the second thermal pad of the second layer functional silicon die via solder. Other related embodiments are disclosed.
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公开(公告)号:US20240162134A1
公开(公告)日:2024-05-16
申请号:US18418154
申请日:2024-01-19
Applicant: Intel Corporation
Inventor: Xiao LU , Jiongxin LU , Christopher COMBS , Alexander HUETTIS , John HARPER , Jieping ZHANG , Nachiket R. RARAVIKAR , Pramod MALATKAR , Steven A. KLEIN , Carl DEPPISCH , Mohit SOOD
IPC: H01L23/498 , B23K3/06 , H01L23/538
CPC classification number: H01L23/49833 , B23K3/0623 , H01L23/49822 , H01L23/4985 , H01L23/5387
Abstract: Embodiments disclosed herein include electronic packages. In an embodiment, the electronic package comprises a first substrate; a second substrate; and an array of interconnects electrically coupling the first substrate to the second substrate. In an embodiment, the array of interconnects comprises first interconnects, wherein the first interconnects have a first volume and a first material composition, and second interconnects, wherein the second interconnects have a second volume and a second material composition, and wherein the first volume is different than the second volume and/or the first material composition is different than the second material composition.
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公开(公告)号:US20180190604A1
公开(公告)日:2018-07-05
申请号:US15394460
申请日:2016-12-29
Applicant: INTEL CORPORATION
Inventor: Mihir A. OKA , Ken P. HACKENBERG , Vijay Krishnan (Vijay) SUBRAMANIAN , Neha M. PATEL , Nachiket R. RARAVIKAR
IPC: H01L23/00
CPC classification number: H01L24/05 , H01L24/03 , H01L24/19 , H01L24/20 , H01L2224/02311 , H01L2224/02371 , H01L2224/0401 , H01L2224/13024 , H01L2224/13025 , H01L2224/211 , H01L2924/014 , H01L2924/3841
Abstract: Foundation layers and methods of forming a foundation layer are described. Die pads are formed over a die. A dielectric layer is formed over die pads and the die. The dielectric layer is then recessed to expose top portions of the die pads. A first plurality of sintered conductive vias are formed over the die pads. The first sintered conductive vias are coupled to at least one of the die pads. In addition, a photoresist layer may be formed over the dielectric layer and the top portions of the die pads. Via openings are formed in the photoresist layer. A second plurality of sintered conductive vias may then be formed over the first sintered conductive vias to form a plurality of sintered conductive lines. Each of the first and second sintered conductive vias are formed with a liquid phase sintering (LPS) solder paste.
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公开(公告)号:US20180047693A1
公开(公告)日:2018-02-15
申请号:US15792569
申请日:2017-10-24
Applicant: Intel Corporation
Inventor: Nachiket R. RARAVIKAR , James C. MATAYABAS, JR. , Akshay MATHKAR
IPC: H01L23/00 , H01L25/00 , B23K35/22 , H01L25/10 , H01L23/498 , H01L23/538
CPC classification number: H01L24/17 , B23K35/025 , B23K35/22 , B23K35/262 , B23K35/302 , B23K35/3033 , B23K35/3613 , B23K2101/40 , H01L23/49811 , H01L23/5389 , H01L24/16 , H01L24/29 , H01L24/32 , H01L24/48 , H01L24/73 , H01L24/81 , H01L24/92 , H01L25/105 , H01L25/50 , H01L2224/0401 , H01L2224/131 , H01L2224/16225 , H01L2224/16227 , H01L2224/2919 , H01L2224/32145 , H01L2224/32225 , H01L2224/45099 , H01L2224/48091 , H01L2224/48227 , H01L2224/73204 , H01L2224/73265 , H01L2224/81815 , H01L2224/92125 , H01L2225/0651 , H01L2225/06568 , H01L2225/1023 , H01L2225/1058 , H01L2924/00014 , H01L2924/014 , H01L2924/12042 , H01L2924/14 , H01L2924/1434 , H01L2924/15311 , H01L2924/1533 , H01L2924/181 , H01L2924/00 , H01L2924/00012
Abstract: Embodiments describe high aspect ratio and fine pitch interconnects for a semiconductor package, such as a package-on-package structure. In an embodiment, the interconnects are formed with a no-slump solder paste. In an embodiment, the no-slump solder paste is printed in an uncured state, and is then cured with a liquid phase sintering process. After being cured, the no-slump solder paste will not reflow at typical processing temperatures, such as those below approximately 400° C. According to embodiments, the no-slump solder paste includes Cu particles or spheres, a solder matrix component, a polymeric delivery vehicle, and a solvent. In an embodiment, the liquid phase sintering produces a shell of intermetallic compounds around the Cu spheres. In an embodiment, the sintering process builds a conductive metallic network through the no-slump solder paste.
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公开(公告)号:US20190157225A1
公开(公告)日:2019-05-23
申请号:US16260908
申请日:2019-01-29
Applicant: Intel Corporation
Inventor: Mihir A. OKA , Ken P. HACKENBERG , Vijay Krishnan (Vijay) SUBRAMANIAN , Neha M. PATEL , Nachiket R. RARAVIKAR
IPC: H01L23/00
Abstract: Foundation layers and methods of forming a foundation layer are described. Die pads are formed over a die. A dielectric layer is formed over die pads and the die. The dielectric layer is then recessed to expose top portions of the die pads. A first plurality of sintered conductive vias are formed over the die pads. The first sintered conductive vias are coupled to at least one of the die pads. In addition, a photoresist layer may be formed over the dielectric layer and the top portions of the die pads. Via openings are formed in the photoresist layer. A second plurality of sintered conductive vias may then be formed over the first sintered conductive vias to form a plurality of sintered conductive lines. Each of the first and second sintered conductive vias are formed with a liquid phase sintering (LPS) solder paste.
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9.
公开(公告)号:US20180323130A1
公开(公告)日:2018-11-08
申请号:US15771025
申请日:2015-12-22
Applicant: Intel Corporation
Inventor: Boxi LIU , Syadwad JAIN , Jelena CULIC-VISKOTA , Nachiket R. RARAVIKAR , James C. MATAYABAS, Jr.
IPC: H01L23/373 , C08K3/08 , C08L83/04 , C08G77/12 , H01L23/367 , C09K5/06 , H01L23/00
CPC classification number: H01L23/3737 , C08G77/12 , C08G77/20 , C08K3/08 , C08K5/00 , C08K5/56 , C08L83/00 , C08L83/04 , C09K5/063 , H01L23/34 , H01L23/3672 , H01L24/83 , H01L2224/8384 , H01L2224/83862
Abstract: An adhesive polymer thermal interface material is described with sintered fillers for thermal conductivity in micro-electronic packaging. Embodiments include a polymer thermal interface material (PTIM) with sinterable thermally conductive filler particles, a dispersant, and a silicone polymer matrix.
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公开(公告)号:US20170200621A1
公开(公告)日:2017-07-13
申请号:US15469284
申请日:2017-03-24
Applicant: Intel Corporation
Inventor: Omkar G. KARHADE , Nitin A. DESHPANDE, JR. , Aditya Sundoctor VAIDYA , Nachiket R. RARAVIKAR , Eric J. LI
IPC: H01L21/56 , H01L21/768 , H01L21/78
Abstract: Embodiments describe a semiconductor package that includes a substrate, a die bonded to the substrate, and a solder paste overmold layer formed over a top surface of the die. In an embodiment, the solder paste comprises a high-melting point metal, a solder matrix, intermetallic compounds and a polymer. The overmold layer has a high elastic modulus, a coefficient of thermal expansion similar to the substrate, and reduces the warpage of the package. In an embodiment, interconnects of a semiconductor package are formed with a no-slump solder paste that includes vents. Vents may be formed through a conductive network formed by the high-melting point metal, solder matrix and intermetallic compounds. In an embodiment, vents provide a path through the interconnect that allows for moisture outgassing. In an embodiment, a mold layer may be mechanically anchored to the interconnects by the vents, thereby providing improved mechanical continuity to the mold layer.
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