COMPOSITE DRY FILM RESIST FOR PHOTOLITHOGRAPHY

    公开(公告)号:US20210318612A1

    公开(公告)日:2021-10-14

    申请号:US17356536

    申请日:2021-06-24

    申请人: Intel Corporation

    IPC分类号: G03F7/038 G03F7/20 G03F7/32

    摘要: The present disclosure is directed to a patterning process that includes providing a composite dry film resist on a surface, in which the composite dry film resist includes a base film, a barrier layer and a resist layer, in which the base film is disposed over the barrier layer and the barrier layer is disposed over the resist layer. In another aspect, the patterning process includes removing the base film from the barrier layer and exposing the barrier layer to form an exposure precursor, which has a first area and a second area, further exposing the first area of the exposure precursor to electromagnetic irradiation, which passes through the barrier layer and the resist layer in the exposed first area becomes water-insoluble, and removing the barrier layer and the unexposed second area to form a pattern template.