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公开(公告)号：US09831122B2
公开(公告)日：2017-11-28
申请号：US13482864
申请日：2012-05-29
IPC分类号： H01L23/48 , H01L21/768 , H01L23/522 , H01L23/525 , H01L23/532 , H01L23/31 , H01L23/00
CPC分类号： H01L23/5226 , H01L21/76843 , H01L21/76879 , H01L21/76885 , H01L23/3114 , H01L23/3192 , H01L23/5227 , H01L23/525 , H01L23/53238 , H01L23/5329 , H01L24/03 , H01L24/05 , H01L2224/02166 , H01L2224/03462 , H01L2224/03831 , H01L2224/04042 , H01L2224/05567 , H01L2224/05624 , H01L2924/00014 , H01L2924/01029 , H01L2924/12042 , H01L2224/05552 , H01L2924/00
摘要： An integrated circuit (IC), design structure, and a method of making the same. In one embodiment, the IC includes: a substrate; a dielectric layer disposed on the substrate; a set of wire components disposed on the dielectric layer, the set of wire components including a first wire component disposed proximate a second wire component; a bond pad disposed on the first wire component, the bond pad including an exposed portion; a passivation layer disposed on the dielectric layer about a portion of the bond pad and the set of wire components, the passivation layer defining a wire structure via connected to the second wire component; and a wire structure disposed on the passivation layer proximate the bond pad and connected to the second wire component through the wire structure via.
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32.发明申请INTEGRATED CIRCUIT INCLUDING WIRE STRUCTURE, RELATED METHOD AND DESIGN STRUCTURE 有权集成电路，包括电线结构，相关方法和设计结构公开(公告)号：US20130320536A1
公开(公告)日：2013-12-05
申请号：US13482864
申请日：2012-05-29
IPC分类号： H01L23/52 , G06F17/50 , H01L21/768
CPC分类号： H01L23/5226 , H01L21/76843 , H01L21/76879 , H01L21/76885 , H01L23/3114 , H01L23/3192 , H01L23/5227 , H01L23/525 , H01L23/53238 , H01L23/5329 , H01L24/03 , H01L24/05 , H01L2224/02166 , H01L2224/03462 , H01L2224/03831 , H01L2224/04042 , H01L2224/05567 , H01L2224/05624 , H01L2924/00014 , H01L2924/01029 , H01L2924/12042 , H01L2224/05552 , H01L2924/00
摘要： An integrated circuit (IC), design structure, and a method of making the same. In one embodiment, the IC includes: a substrate; a dielectric layer disposed on the substrate; a set of wire components disposed on the dielectric layer, the set of wire components including a first wire component disposed proximate a second wire component; a bond pad disposed on the first wire component, the bond pad including an exposed portion; a passivation layer disposed on the dielectric layer about a portion of the bond pad and the set of wire components, the passivation layer defining a wire structure via connected to the second wire component; and a wire structure disposed on the passivation layer proximate the bond pad and connected to the second wire component through the wire structure via.
摘要翻译： 集成电路（IC），设计结构及其制作方法。 在一个实施例中，IC包括：衬底; 设置在所述基板上的电介质层; 设置在电介质层上的一组电线组件，该组电线组件包括靠近第二电线组件设置的第一电线组件; 设置在所述第一线材部件上的接合焊盘，所述接合焊盘包括暴露部分; 围绕所述接合焊盘和所述一组导线部件的一部分设置在所述电介质层上的钝化层，所述钝化层通过连接到所述第二导线部件限定线结构; 以及布线在靠近接合焊盘的钝化层上并通过导线结构通孔连接到第二导线部件的线结构。
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公开(公告)号：US08217259B2
公开(公告)日：2012-07-10
申请号：US12474836
申请日：2009-05-29
IPC分类号： H01L31/00
CPC分类号： H01L31/18 , H01L31/02168 , H01L31/0543 , Y02E10/52
摘要： Enhanced efficiency solar cells and methods of manufacture of such cells are described herein. In an illustrative example, the solar cell includes at least one or more collector lens bars each of which extend on sides of front contacts and positioned over a respective active area of one or more active areas in such as position as to guide light onto the one or more active areas. A protective layer covers the at least one or more collector lens bars.
摘要翻译： 本文描述了提高效率的太阳能电池和这种电池的制造方法。 在说明性示例中，太阳能电池包括至少一个或多个收集透镜杆，每个收集透镜杆在前触点的侧面上延伸，并且位于一个或多个有源区域的相应有源区域上，以将光引导到一个 或更多的活动区域。 保护层覆盖至少一个或多个收集透镜条。
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公开(公告)号：US08592244B2
公开(公告)日：2013-11-26
申请号：US13189961
申请日：2011-07-25
IPC分类号： H01L21/00
CPC分类号： H01L27/14623 , H01L27/14636 , H01L27/14687
摘要： Pixel sensor cells with an opaque mask layer and methods of manufacturing are provided. The method includes forming a transparent layer over at least one active pixel and at least one dark pixel of a pixel sensor cell. The method further includes forming an opaque region in the transparent layer over the at least one dark pixel.
摘要翻译： 提供了具有不透明掩模层的像素传感器单元和制造方法。 该方法包括在像素传感器单元的至少一个有源像素和至少一个暗像素的上方形成透明层。 该方法还包括在至少一个暗像素上的透明层中形成不透明区域。
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公开(公告)号：US08394718B1
公开(公告)日：2013-03-12
申请号：US13229912
申请日：2011-09-12
IPC分类号： H01L21/44 , H01L21/311 , H01L21/4763
CPC分类号： H01L21/3081 , H01L21/76898
摘要： A method for forming a through silicon via (TSV) in a substrate may include forming a dielectric layer on the substrate; forming an opening through the dielectric layer and into the substrate using a single mask over the dielectric layer; expanding the opening in the dielectric layer, undercutting the single mask, to form an expanded upper portion; removing the single mask; and filling the opening, including the expanded upper portion, with a conductor. A resulting structure may include a substrate; a dielectric layer over the substrate; and a self-aligned through silicon via (TSV) extending through the dielectric layer and the substrate.
摘要翻译： 在衬底中形成贯穿硅通孔（TSV）的方法可以包括在衬底上形成电介质层; 通过所述电介质层形成开口并使用所述电介质层上的单个掩模进入所述衬底; 使介电层中的开口膨胀，对单个掩模进行底切以形成膨胀的上部; 去除单个面具; 并且用导体填充包括扩大的上部的开口。 所得到的结构可以包括基底; 介电层; 以及延伸穿过电介质层和衬底的自对准通过硅通孔（TSV）。
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公开(公告)号：US20100175750A1
公开(公告)日：2010-07-15
申请号：US12474836
申请日：2009-05-29
IPC分类号： H01L31/0216 , H01L31/18
CPC分类号： H01L31/18 , H01L31/02168 , H01L31/0543 , Y02E10/52
摘要： Enhanced efficiency solar cells and methods of manufacture of such cells are described herein. In an illustrative example, the solar cell includes at least one or more collector lens bars each of which extend on sides of front contacts and positioned over a respective active area of one or more active areas in such as position as to guide light onto the one or more active areas. A protective layer covers the at least one or more collector lens bars.
摘要翻译： 本文描述了提高效率的太阳能电池和这种电池的制造方法。 在说明性示例中，太阳能电池包括至少一个或多个收集透镜杆，每个收集透镜杆在前触点的侧面上延伸，并且位于一个或多个有源区域的相应有源区域上，以将光引导到一个 或更多的活动区域。 保护层覆盖至少一个或多个收集透镜条。
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37.发明授权Methods for improved adhesion of protective layers of imager microlens structures by forming an interfacial region 有权通过形成界面区域来改善成像器微透镜结构的保护层的附着的方法公开(公告)号：US08476099B2
公开(公告)日：2013-07-02
申请号：US12841750
申请日：2010-07-22
申请人： Edward C. Cooney, III , Jeffrey P. Gambino , Robert K. Leidy , Charles F. Musante , John G. Twombly
发明人： Edward C. Cooney, III , Jeffrey P. Gambino , Robert K. Leidy , Charles F. Musante , John G. Twombly
IPC分类号： H01L21/473 , H01L31/18
CPC分类号： H01L31/02325 , C23C16/02 , C23C16/0272 , C23C16/402 , C23C16/505 , G06F17/5045 , H01L27/14627 , H01L27/14685
摘要： Methods, structures, and design structures for improved adhesion of protective layers of imager microlens structures are disclosed. A method of fabricating a semiconductor structure includes forming an interfacial region between a microlens and a protective oxide layer. The interfacial region has a lower concentration of oxygen than the protective oxide layer.
摘要翻译： 公开了用于改善成像器微透镜结构保护层附着力的方法，结构和设计结构。 制造半导体结构的方法包括在微透镜和保护氧化物层之间形成界面区域。 界面区域的氧浓度低于保护氧化物层。
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公开(公告)号：US20130065393A1
公开(公告)日：2013-03-14
申请号：US13229912
申请日：2011-09-12
IPC分类号： H01L21/768
CPC分类号： H01L21/3081 , H01L21/76898
摘要： A method for forming a through silicon via (TSV) in a substrate may include forming a dielectric layer on the substrate; forming an opening through the dielectric layer and into the substrate using a single mask over the dielectric layer; expanding the opening in the dielectric layer, undercutting the single mask, to form an expanded upper portion; removing the single mask; and filling the opening, including the expanded upper portion, with a conductor. A resulting structure may include a substrate; a dielectric layer over the substrate; and a self-aligned through silicon via (TSV) extending through the dielectric layer and the substrate.
摘要翻译： 在衬底中形成贯穿硅通孔（TSV）的方法可以包括在衬底上形成电介质层; 通过所述电介质层形成开口并使用所述电介质层上的单个掩模进入所述衬底; 使介电层中的开口膨胀，对单个掩模进行底切以形成膨胀的上部; 去除单个面具; 并且用导体填充包括扩大的上部的开口。 所得到的结构可以包括基底; 介电层; 以及延伸穿过电介质层和衬底的自对准通过硅通孔（TSV）。
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公开(公告)号：US08003428B2
公开(公告)日：2011-08-23
申请号：US12056736
申请日：2008-03-27
IPC分类号： H01L21/00
CPC分类号： H01L27/14627 , H01L27/14609 , H01L27/14621 , H01L27/14685
摘要： A flat-top convex-bottom lower lens is formed by first applying a positive tone photoresist over a silicon oxide layer and an optional metallic barrier layer thereupon in a back-end-of-line (BEOL) metallization structure. The positive tone photoresist is exposed under defocused illumination conditions and/or employing a half-tone mask so that a cross-sectional profile of the positive tone photoresist after exposure contains a continuous and smooth concave profile, which is transferred into the underlying silicon oxide layer to form a concave cavity therein. After removing the photoresist, the cavity is filled with a high refractive index material such as silicon nitride, and planarized to form a flat-top convex-bottom lower lens. Various aluminum metal structures, a color filter, and a convex-top flat-bottom upper lens are thereafter formed so that the upper lens and the lower lens constitute a composite lens system.
摘要翻译： 通过在后端行（BEOL）金属化结构中首先在氧化硅层上施加正色调光致抗蚀剂和可选的金属阻挡层来形成平顶凸底底部透镜。 正色调光致抗蚀剂在散焦照明条件下和/或使用半色调掩模下曝光，使得曝光后的正色调光致抗蚀剂的横截面轮廓包含连续且平滑的凹形轮廓，其被转移到下面的氧化硅层 以在其中形成凹腔。 在除去光致抗蚀剂之后，用诸如氮化硅的高折射率材料填充空腔，并且平坦化以形成平顶凸底底部下透镜。 此后形成各种铝金属结构，滤色器和凸顶平底上透镜，使得上透镜和下透镜构成复合透镜系统。
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公开(公告)号：US20090242948A1
公开(公告)日：2009-10-01
申请号：US12056736
申请日：2008-03-27
IPC分类号： H01L31/0232 , H01L31/18
CPC分类号： H01L27/14627 , H01L27/14609 , H01L27/14621 , H01L27/14685
摘要： A flat-top convex-bottom lower lens is formed by first applying a positive tone photoresist over a silicon oxide layer and an optional metallic barrier layer thereupon in a back-end-of-line (BEOL) metallization structure. The positive tone photoresist is exposed under defocused illumination conditions and/or employing a half-tone mask so that a cross-sectional profile of the positive tone photoresist after exposure contains a continuous and smooth concave profile, which is transferred into the underlying silicon oxide layer to form a concave cavity therein. After removing the photoresist, the cavity is filled with a high refractive index material such as silicon nitride, and planarized to form a flat-top convex-bottom lower lens. Various aluminum metal structures, a color filter, and a convex-top flat-bottom upper lens are thereafter formed so that the upper lens and the lower lens constitute a composite lens system.
摘要翻译： 通过在后端行（BEOL）金属化结构中首先在氧化硅层上施加正色调光致抗蚀剂和可选的金属阻挡层来形成平顶凸底底部透镜。 正色调光致抗蚀剂在散焦照明条件下和/或使用半色调掩模下曝光，使得曝光后的正色调光致抗蚀剂的横截面轮廓包含连续且平滑的凹形轮廓，其被转移到下面的氧化硅层 以在其中形成凹腔。 在除去光致抗蚀剂之后，用诸如氮化硅的高折射率材料填充空腔，并且平坦化以形成平顶凸底底部下透镜。 此后形成各种铝金属结构，滤色器和凸顶平底上透镜，使得上透镜和下透镜构成复合透镜系统。
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