公开(公告)号：US20080246020A1

公开(公告)日：2008-10-09

申请号：US11812357

申请日：2007-06-18

申请人： Takahiro Kawashima ,  Tohru Saitoh ,  Kenji Harada

发明人： Takahiro Kawashima ,  Tohru Saitoh ,  Kenji Harada

IPC分类号： H01L29/12 ,  B32B1/00 ,  B32B5/16 ,  B32B9/00 ,  B05D5/12

CPC分类号： H01L29/0665 ,  B82Y10/00 ,  B82Y30/00 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02645 ,  H01L21/02653 ,  H01L29/0673 ,  H01L29/068 ,  Y10S977/742 ,  Y10S977/743 ,  Y10S977/762 ,  Y10T428/2918 ,  Y10T428/2927 ,  Y10T428/2938

摘要： A nanowire according to the present invention includes: a nanowire body made of a crystalline semiconductor as a first material; and a plurality of fine particles, which are made of a second material, including a constituent element of the semiconductor, and which are located on at least portions of the surface of the nanowire body. The surface of the nanowire body is smooth.

摘要翻译： 根据本发明的纳米线包括：由作为第一材料的晶体半导体制成的纳米线体; 以及多个微粒，其由包括半导体的构成元素的第二材料制成，并且位于纳米线体的表面的至少一部分上。 纳米线体表面光滑。

公开(公告)号：US20080224122A1

公开(公告)日：2008-09-18

申请号：US10588605

申请日：2005-12-21

申请人： Tohru Saitoh ,  Takahiro Kawashima

发明人： Tohru Saitoh ,  Takahiro Kawashima

IPC分类号： H01L29/06 ,  H01L21/20

CPC分类号： H01L29/775 ,  B82Y10/00 ,  H01L27/1214 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/78618 ,  H01L29/78681 ,  H01L29/78684 ,  H01L29/7869 ,  H01L29/78696 ,  Y10S977/762 ,  Y10S977/938

摘要： A nanowire (100) according to the present invention includes a plurality of contact regions (10a, 10b) and at least one channel region (12), which is connected to the contact regions (10a, 10b). The channel region (12) is made of a first semiconductor material and the surface of the channel region (12) is covered with an insulating layer that has been formed selectively on the channel region (12). The contact regions (10a, 10b) are made of a second semiconductor material, which is different from the first semiconductor material for the channel region (12), and at least the surface of the contact regions (10a, 10b) includes a conductive portion.

摘要翻译： 根据本发明的纳米线（100）包括连接到接触区域（10a，10b）的多个接触区域（10a，10b）和至少一个沟道区域（12）。 通道区域（12）由第一半导体材料制成，沟道区域（12）的表面被选择性地形成在沟道区域（12）上的绝缘层覆盖。 接触区域（10a，10b）由与沟道区域（12）的第一半导体材料不同的第二半导体材料制成，并且至少接触区域（10a，10b）的表面， 包括导电部分。

公开(公告)号：US20080035912A1

公开(公告)日：2008-02-14

申请号：US10599658

申请日：2005-08-30

申请人： Takayuki Takeuchi ,  Takahiro Kawashima ,  Tohru Saitoh ,  Tomohiro Okuzawa ,  Yasuo Kitaoka

发明人： Takayuki Takeuchi ,  Takahiro Kawashima ,  Tohru Saitoh ,  Tomohiro Okuzawa ,  Yasuo Kitaoka

IPC分类号： H01L51/10 ,  H01L21/336

CPC分类号： H01L29/78696 ,  B82Y10/00 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/66742 ,  H01L51/0541 ,  H01L51/0545

摘要： A field-effect transistor includes a semiconductor layer (14), a source electrode (15) and a drain electrode (16) electrically connected to the semiconductor layer (14), and a gate electrode (12) for applying an electric field to the semiconductor layer (14) between the source electrode (15) and the drain electrode (16). The semiconductor layer (14) contains an organic semiconductor material and a plurality of thin wires made of an inorganic semiconductor.

摘要翻译： 场效应晶体管包括电连接到半导体层（14）的半导体层（14），源电极（15）和漏电极（16），以及用于向该半导体层施加电场的栅电极 在源电极（15）和漏电极（16）之间的半导体层（14）。 半导体层（14）包含有机半导体材料和多个由无机半导体制成的细线。

公开(公告)号：US20060226446A1

公开(公告)日：2006-10-12

申请号：US11450474

申请日：2006-06-12

申请人： Teruhito Ohnishi ,  Koichiro Yuki ,  Tsuneichiro Sano ,  Tohru Saitoh ,  Ken Idota ,  Takahiro Kawashima ,  Shigeki Sawada

发明人： Teruhito Ohnishi ,  Koichiro Yuki ,  Tsuneichiro Sano ,  Tohru Saitoh ,  Ken Idota ,  Takahiro Kawashima ,  Shigeki Sawada

IPC分类号： H01L31/00

CPC分类号： H01L29/66242 ,  H01L29/7378

摘要： A bipolar transistor includes a Si single crystalline layer serving as a collector, a single crystalline Si/SiGeC layer and a polycrystalline Si/SiGeC layer which are formed on the Si single crystalline layer, an oxide film having an emitter opening portion, an emitter electrode, and an emitter layer. An intrinsic base layer is formed on the single crystalline Si/SiGeC layer, part of the single crystalline Si/SiGeC layer, the polycrystalline Si/SiGeC layer and the Co silicide layer together form an external base layer. The thickness of the emitter electrode is set so that boron ions implanted into the emitter electrode and diffused therein do not reach an emitter-base junction portion.

公开(公告)号：US06838395B1

公开(公告)日：2005-01-04

申请号：US10330080

申请日：2002-12-30

申请人： Yoshihiko Kanzawa ,  Teruhito Ohnishi ,  Ken Idota ,  Tohru Saitoh ,  Akira Asai

发明人： Yoshihiko Kanzawa ,  Teruhito Ohnishi ,  Ken Idota ,  Tohru Saitoh ,  Akira Asai

IPC分类号： C30B1/00 ,  C30B23/02 ,  C30B25/02 ,  C30B29/52 ,  H01L21/205 ,  H01L21/31 ,  H01L21/322 ,  H01L21/324

CPC分类号： H01L21/324 ,  C30B23/02 ,  C30B25/02 ,  C30B29/52 ,  H01L21/02381 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02661 ,  H01L21/02664 ,  H01L21/322 ,  Y10S438/933

摘要： A method for fabricating a semiconductor crystal that has a first step for forming a semiconductor crystal layer (202) that contains carbon atoms and at least one kind of Group IV element other than carbon on a substrate (201), a second step for adding an impurity that is capable of reacting with oxygen to the semiconductor crystal layer (202), and a third step for removing the carbon atoms contained in the semiconductor crystal layer (202) by reacting the carbon with the impurity. This method makes it possible to fabricate a semiconductor crystal substrate in which the concentration of interstitial carbon atoms is satisfactorily reduced, thus resulting in excellent electrical properties when the substrate is applied to a semiconductor device.

摘要翻译： 一种制造半导体晶体的方法，其具有在基板（201）上形成含有碳原子的半导体晶体层（202）和除了碳以外的至少一种第IV族元素的第一工序，第二工序用于添加 能够与氧反应的半导体晶体层（202）的杂质，以及通过使碳与杂质反应来除去半导体结晶层（202）中所含的碳原子的第三工序。 该方法可以制造其中间隙碳原子的浓度令人满意地降低的半导体晶体衬底，从而当将衬底应用于半导体器件时获得优异的电性能。

公开(公告)号：US06169296A

公开(公告)日：2001-01-02

申请号：US09176906

申请日：1998-10-22

申请人： Satoshi Kamiyama ,  Shigeo Yoshii ,  Ryoko Miyanaga ,  Takashi Nishikawa ,  Tohru Saitoh ,  Yoichi Sasai

发明人： Satoshi Kamiyama ,  Shigeo Yoshii ,  Ryoko Miyanaga ,  Takashi Nishikawa ,  Tohru Saitoh ,  Yoichi Sasai

IPC分类号： H01L3300

CPC分类号： H01L33/40 ,  H01L33/145 ,  H01L33/38 ,  H01L33/42

摘要： The light-emitting diode device of the present invention includes an active layer, a p-type contact layer, a Schottky electrode and an ohmic electrode. The active layer is formed over an n-type semiconductor substrate. The contact layer is formed over the active layer. The Schottky electrode is selectively formed on the contact layer and makes Schottky contact with the contact layer. The ohmic electrode is formed to surround the Schottky electrode on the contact layer and to be electrically connected to the Schottky electrode and transmits the light emitted from the active layer.

摘要翻译： 本发明的发光二极管器件包括有源层，p型接触层，肖特基电极和欧姆电极。 有源层形成在n型半导体衬底上。 接触层形成在有源层上。 肖特基电极选择性地形成在接触层上并与接触层进行肖特基接触。 欧姆电极形成为围绕接触层上的肖特基电极并与肖特基电极电连接并透射从有源层发射的光。

公开(公告)号：US08486788B2

公开(公告)日：2013-07-16

申请号：US13162310

申请日：2011-06-16

申请人： Junko Iwanaga ,  Takeshi Takagi ,  Yoshihiko Kanzawa ,  Haruyuki Sorada ,  Tohru Saitoh ,  Takahiro Kawashima

发明人： Junko Iwanaga ,  Takeshi Takagi ,  Yoshihiko Kanzawa ,  Haruyuki Sorada ,  Tohru Saitoh ,  Takahiro Kawashima

IPC分类号： H01L21/336

CPC分类号： H01L29/785 ,  H01L21/823431 ,  H01L27/0886 ,  H01L29/66795

摘要： A semiconductor device includes: a semiconductor substrate in which a trench is formed; a source region and a drain region each of which is buried in the trench and contains an impurity of the same conductive type; a semiconductor FIN buried in the trench and provided between the source and drain regions; a gate insulating film provided on a side surface of the semiconductor FIN as well as the upper surface of the semiconductor FIN; and a gate electrode formed on the gate insulating film.

摘要翻译： 一种半导体器件包括：形成沟槽的半导体衬底; 源极区域和漏极区域，每个源极区域和漏极区域被埋在沟槽中并且包含相同导电类型的杂质; 掩埋在沟槽中并设置在源区和漏区之间的半导体FIN; 设置在半导体FIN的侧表面上的栅极绝缘膜以及半导体FIN的上表面; 以及形成在栅极绝缘膜上的栅电极。

公开(公告)号：US08368049B2

公开(公告)日：2013-02-05

申请号：US13399521

申请日：2012-02-17

申请人： Takahiro Kawashima ,  Tohru Saitoh ,  Kenji Harada ,  Norishige Nanai ,  Takayuki Takeuchi

发明人： Takahiro Kawashima ,  Tohru Saitoh ,  Kenji Harada ,  Norishige Nanai ,  Takayuki Takeuchi

IPC分类号： H01L29/06 ,  H01L31/00

CPC分类号： H01L29/0673 ,  H01L29/66772 ,  H01L29/78696

摘要： A nanowire transistor according to the present invention includes: at least one nanowire 13 including a core portion 13a that functions as a channel region and an insulating shell portion 13b that covers the surface of the core portion 13a; source and drain electrodes 14 and 15, which are connected to the nanowire 13; and a gate electrode 21 for controlling conductivity in at least a part of the core portion 13a of the nanowire 13. The core portion 13a is made of semiconductor single crystals including Si and has a cross section with a curved profile on a plane that intersects with the longitudinal axis thereof. The insulating shell portion 13b is made of an insulator including Si and functions as at least a portion of a gate insulating film.

摘要翻译： 根据本发明的纳米线晶体管包括：至少一个纳米线13，其包括用作沟道区的芯部13a和覆盖芯部13a的表面的绝缘壳部13b; 源极和漏极14和15，其连接到纳米线13; 以及用于控制纳米线13的芯部13a的至少一部分的导电性的栅电极21.芯部13a由包含Si的半导体单晶制成，并且在与 其纵轴。 绝缘外壳部分13b由包括Si的绝缘体制成，并且起到至少一部分栅极绝缘膜的作用。

公开(公告)号：US08143144B2

公开(公告)日：2012-03-27

申请号：US12451898

申请日：2008-06-04

申请人： Takahiro Kawashima ,  Tohru Saitoh

发明人： Takahiro Kawashima ,  Tohru Saitoh

IPC分类号： H01L21/20 ,  H01L29/06

CPC分类号： H01L21/02653 ,  B82Y10/00 ,  B82Y30/00 ,  C30B11/12 ,  C30B25/00 ,  C30B29/06 ,  C30B29/40 ,  C30B29/60 ,  H01L21/02521 ,  H01L21/02573 ,  H01L21/02603 ,  H01L21/02656 ,  H01L27/3262 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/0676 ,  H01L29/068 ,  H01L29/775 ,  H01L33/18 ,  Y10S438/962

摘要： A method for fabricating a semiconductor nanowire that has first and second regions is provided. A catalyst particle is put on a substrate. A first source gas is introduced, thereby growing the first region from the catalyst particle via a vapor-liquid-solid phase growth. A protective coating is formed on a sidewall of the first region, and a second source gas is introduced to grow the second region extending from the first region via the liquid-solid-phase growth.

摘要翻译： 提供一种制造具有第一和第二区域的半导体纳米线的方法。 将催化剂颗粒放在基材上。 引入第一源气体，从而通过气 - 液 - 固相生长从催化剂颗粒生长第一区域。 在第一区域的侧壁上形成保护涂层，并且引入第二源气体以通过液相 - 固相生长从第一区域延伸出第二区域。

公开(公告)号：US07629629B2

公开(公告)日：2009-12-08

申请号：US10588605

申请日：2005-12-21

申请人： Tohru Saitoh ,  Takahiro Kawashima

发明人： Tohru Saitoh ,  Takahiro Kawashima

IPC分类号： H01L29/76

CPC分类号： H01L29/775 ,  B82Y10/00 ,  H01L27/1214 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/78618 ,  H01L29/78681 ,  H01L29/78684 ,  H01L29/7869 ,  H01L29/78696 ,  Y10S977/762 ,  Y10S977/938

摘要： A nanowire (100) according to the present invention includes a plurality of contact regions (10a, 10b) and at least one channel region (12), which is connected to the contact regions (10a, 10b). The channel region (12) is made of a first semiconductor material and the surface of the channel region (12) is covered with an insulating layer that has been formed selectively on the channel region (12). The contact regions (10a, 10b) are made of a second semiconductor material, which is different from the first semiconductor material for the channel region (12), and at least the surface of the contact regions (10a, 10b) includes a conductive portion.

摘要翻译： 根据本发明的纳米线（100）包括连接到接触区域（10a，10b）的多个接触区域（10a，10b）和至少一个沟道区域（12）。 通道区域（12）由第一半导体材料制成，沟道区域（12）的表面被选择性地形成在沟道区域（12）上的绝缘层覆盖。 接触区域（10a，10b）由与沟道区域（12）的第一半导体材料不同的第二半导体材料制成，并且至少接触区域（10a，10b）的表面包括导电部分 。