公开(公告)号：US6087725A

公开(公告)日：2000-07-11

申请号：US161498

申请日：1998-09-28

申请人： Shigeo Yoshii ,  Yoichi Sasai ,  Satoshi Kamiyama ,  Tohru Saitoh ,  Takashi Nishikawa ,  Ryoko Miyanaga

发明人： Shigeo Yoshii ,  Yoichi Sasai ,  Satoshi Kamiyama ,  Tohru Saitoh ,  Takashi Nishikawa ,  Ryoko Miyanaga

IPC分类号： H01L33/28 ,  H01L33/40 ,  H01L33/00

CPC分类号： H01L33/40 ,  H01L33/28

摘要： On a substrate of n-type GaAs, an n-type cladding layer of n-type Zn.sub.0.9 Mg.sub.0.1 S.sub.0.13 Se.sub.0.87, an n-type light guiding layer of n-type ZnS.sub.0.06 Se.sub.0.94, an active layer of ZnCdSe and a p-type light guiding layer of p-type ZnS.sub.0.06 Se.sub.0.94 are successively formed. On the p-type light guiding layer, a p-type contact structure is formed. The p-type contact structure includes a first layer of p-type ZnS.sub.0.31 Se.sub.0.54 Te.sub.0.15, a second layer of ZnS.sub.0.47 Se.sub.0.28 Te.sub.0.25, a third layer of p-type ZnS.sub.0.65 Te.sub.0.35, a fourth layer of p-type ZnS.sub.0.5 Te.sub.0.5 and a fifth layer of p-type ZnTe.

摘要翻译： 在n型GaAs的衬底上，n型Zn0.9Mg0.1S0.13Se0.87的n型覆层，n型ZnS0.06Se0.94的n型导光层，n型ZnS0.06Se0.94的有源层 ZnCdSe和p型ZnS0.06Se0.94的p型导光层依次形成。 在p型导光层上形成p型接触结构。 p型接触结构包括第一层p型ZnS0.31Se0.54Te0.15，第二层ZnS0.47Se0.28Te0.25，第三层p型ZnS0.65Te0.35，第四层 的p型ZnS0.5Te0.5和第五层p型ZnTe。

公开(公告)号：US06169296A

公开(公告)日：2001-01-02

申请号：US09176906

申请日：1998-10-22

申请人： Satoshi Kamiyama ,  Shigeo Yoshii ,  Ryoko Miyanaga ,  Takashi Nishikawa ,  Tohru Saitoh ,  Yoichi Sasai

发明人： Satoshi Kamiyama ,  Shigeo Yoshii ,  Ryoko Miyanaga ,  Takashi Nishikawa ,  Tohru Saitoh ,  Yoichi Sasai

IPC分类号： H01L3300

CPC分类号： H01L33/40 ,  H01L33/145 ,  H01L33/38 ,  H01L33/42

摘要： The light-emitting diode device of the present invention includes an active layer, a p-type contact layer, a Schottky electrode and an ohmic electrode. The active layer is formed over an n-type semiconductor substrate. The contact layer is formed over the active layer. The Schottky electrode is selectively formed on the contact layer and makes Schottky contact with the contact layer. The ohmic electrode is formed to surround the Schottky electrode on the contact layer and to be electrically connected to the Schottky electrode and transmits the light emitted from the active layer.

摘要翻译： 本发明的发光二极管器件包括有源层，p型接触层，肖特基电极和欧姆电极。 有源层形成在n型半导体衬底上。 接触层形成在有源层上。 肖特基电极选择性地形成在接触层上并与接触层进行肖特基接触。 欧姆电极形成为围绕接触层上的肖特基电极并与肖特基电极电连接并透射从有源层发射的光。

公开(公告)号：US5619520A

公开(公告)日：1997-04-08

申请号：US523189

申请日：1995-09-05

申请人： Yoichi Sasai ,  Nobuyuki Uemura ,  Satoshi Kamiyama ,  Minoru Kubo ,  Takashi Nishikawa

发明人： Yoichi Sasai ,  Nobuyuki Uemura ,  Satoshi Kamiyama ,  Minoru Kubo ,  Takashi Nishikawa

IPC分类号： H01S5/223 ,  H01S5/347 ,  H01S3/18

CPC分类号： B82Y20/00 ,  H01S5/347 ,  H01S5/2231

摘要： A semiconductor laser of this invention includes: a semiconductor substrate; a first cladding layer made of first conductivity type ZnMgSSe, which is held by the semiconductor substrate and lattice-matches with the semiconductor substrate; a stripe-shaped second cladding layer made of second conductivity type ZnMgSSe lattice-matching with the semiconductor substrate; a light-emitting layer including a first and a second light guiding layers made of Zn.sub.1-x Mg.sub.x S.sub.1-y Se.sub.y (0.ltoreq.x

摘要翻译： 本发明的半导体激光器包括：半导体衬底; 由第一导电型ZnMgSSe制成的第一包层，其由半导体衬底保持并与半导体衬底晶格匹配; 由与半导体基板的第二导电型ZnMgSSe晶格匹配构成的条状的第二包层; 包括由Zn1-xMgxS1-ySey（0≤x≤1,0

公开(公告)号：US6072762A

公开(公告)日：2000-06-06

申请号：US289984

申请日：1999-04-13

申请人： Masahiro Kume ,  Yuzaburo Ban ,  Isao Kidoguchi ,  Satoshi Kamiyama ,  Ayumu Tsujimura ,  Akihiko Ishibashi ,  Yoshiaki Hasegawa ,  Ryoko Miyanaga

发明人： Masahiro Kume ,  Yuzaburo Ban ,  Isao Kidoguchi ,  Satoshi Kamiyama ,  Ayumu Tsujimura ,  Akihiko Ishibashi ,  Yoshiaki Hasegawa ,  Ryoko Miyanaga

IPC分类号： G11B7/005 ,  G11B7/125 ,  G11B7/135 ,  G11B11/105

CPC分类号： G11B7/126 ,  G11B11/10515 ,  G11B11/10543 ,  G11B7/005 ,  G11B7/128 ,  G11B7/1369 ,  G11B7/135

摘要： Between a semiconductor laser diode and an optical disk, a collimator lens for collimating a laser beam output from the semiconductor laser diode, a liquid crystal optical shutter for attenuating the collimated beam having passed through the collimator lens, and a beam splitter for splitting reflected light from the optical disk are disposed. In addition, a collective lens for collecting the collimated beam obtained by the collimator lens on a data holding surface of the optical disk is further disposed.

摘要翻译： 在半导体激光二极管和光盘之间，用于准直半导体激光二极管输出的激光束的准直透镜，用于衰减通过准直透镜的准直光束的液晶光学快门，以及用于分离反射光的分束器 从光盘配置。 此外，还设置有用于收集由准直透镜获得的准直光束在光盘的数据保持表面上的集体透镜。

公开(公告)号：US06466597B1

公开(公告)日：2002-10-15

申请号：US09332163

申请日：1999-06-14

申请人： Masahiro Kume ,  Yuzaburo Ban ,  Kenji Harafuji ,  Isao Kidoguchi ,  Satoshi Kamiyama ,  Ayumu Tsujimura ,  Ryoko Miyanaga ,  Akihiko Ishibashi ,  Yoshiaki Hasegawa

发明人： Masahiro Kume ,  Yuzaburo Ban ,  Kenji Harafuji ,  Isao Kidoguchi ,  Satoshi Kamiyama ,  Ayumu Tsujimura ,  Ryoko Miyanaga ,  Akihiko Ishibashi ,  Yoshiaki Hasegawa

IPC分类号： G01S500

CPC分类号： B82Y20/00 ,  H01S5/2009 ,  H01S5/34333

摘要： A nitride semiconductor laser device includes an n-type contact layer of n-type GaN and an n-type cladding layer of n-type Al0.35Ga0.65N formed on a substrate of sapphire. On the n-type cladding layer, a multiple quantum well active layer of Al0.2Ga0.8N/Al0.25Ga0.75N, a p-type leak barrier layer of p-type Al0.5Ga0.5N0.975P0.025 and a p-type cladding layer of p-type Al0.4Ga0.6N0.98P0.02 are successively formed. The p-type leak barrier layer has a wider energy gap than the n-type cladding layer, and the p-type leak barrier layer and the p-type cladding layer include phosphorus for making an acceptor level shallow with keeping a wide energy gap.

摘要翻译： 氮化物半导体激光器件包括形成在蓝宝石衬底上的n型GaN的n型接触层和n型Al0.35Ga0.65N的n型覆层。 在n型覆层上，具有Al0.2Ga0.8N / Al0.25Ga0.75N的多量子阱有源层，p型Al0.5Ga0.5N0.975P0.025的p型阻挡层和p型 型p型Al0.4Ga0.6N0.98P0.02型包层依次形成。 p型漏电阻层的能隙比n型包覆层宽，p型漏电阻层和p型覆盖层包含磷，以使受主水平浅，保持宽的能隙。

公开(公告)号：US06324200B1

公开(公告)日：2001-11-27

申请号：US09294336

申请日：1999-04-20

申请人： Satoshi Kamiyama ,  Masahiro Kume ,  Ryoko Miyanaga ,  Isao Kidoguchi ,  Yuzaburo Ban ,  Ayumu Tsujimura ,  Yoshiaki Hasegawa ,  Akihiko Ishibashi

发明人： Satoshi Kamiyama ,  Masahiro Kume ,  Ryoko Miyanaga ,  Isao Kidoguchi ,  Yuzaburo Ban ,  Ayumu Tsujimura ,  Yoshiaki Hasegawa ,  Akihiko Ishibashi

IPC分类号： H01S319

CPC分类号： B82Y20/00 ,  H01S5/3054 ,  H01S5/3063 ,  H01S5/343 ,  H01S5/34333

摘要： A GaN buffer layer and an Si-doped n-type GaN contact layer are formed in this order on a sapphire substrate. An n-type Al0.3Ga0.7N cladding layer, an n-type Al0.25Ga0.75N optical guide layer, a multi-quantum well active layer, in which Al0.2Ga0.8N well layers and Al0.25Ga0.75N barrier layers are alternately stacked, an Mg-doped p-type Al0.25Ga0.75N optical guide layer, a p-type Al0.4Ga0.6N0.98P0.02 cladding layer and a p-type GaN contact layer are stacked in this order on an active region on the upper surface of the n-type contact layer.

摘要翻译： 在蓝宝石衬底上依次形成GaN缓冲层和Si掺杂n型GaN接触层。 n型Al0.3Ga0.7N覆层，n型Al0.25Ga0.75N光导层，多量子阱有源层，其中Al0.2Ga0.8N阱层和Al0.25Ga0.75N势垒层 交替堆叠，将Mg掺杂的p型Al0.25Ga0.75N光导层，p型Al0.4Ga0.6N0.98P0.02包覆层和p型GaN接触层依次层叠在 在n型接触层的上表面上的有源区。

公开(公告)号：US5705831A

公开(公告)日：1998-01-06

申请号：US415540

申请日：1995-04-03

申请人： Nobuyuki Uemura ,  Minoru Kubo ,  Yoichi Sasai ,  Kazuhiro Ohkawa ,  Satoshi Kamiyama ,  Takeshi Uenoyama

发明人： Nobuyuki Uemura ,  Minoru Kubo ,  Yoichi Sasai ,  Kazuhiro Ohkawa ,  Satoshi Kamiyama ,  Takeshi Uenoyama

IPC分类号： H01L33/00 ,  H01L33/06 ,  H01L33/28 ,  H01L29/22 ,  H01L31/0256 ,  H01L31/0296

CPC分类号： H01L33/28 ,  B82Y20/00 ,  H01L33/0087 ,  H01L33/06

摘要： According to one aspect of the invention, a crystal-growing method for forming a II-VI single crystalline semiconductor expressed by Zn.sub.1-x Cd.sub.x Se (where 0

摘要翻译： 根据本发明的一个方面，提供了由Zn1-xCdxSe（其中0

公开(公告)号：US5742629A

公开(公告)日：1998-04-21

申请号：US684383

申请日：1996-07-19

申请人： Takashi Nishikawa ,  Nobuyuki Uemura ,  Satoshi Kamiyama

发明人： Takashi Nishikawa ,  Nobuyuki Uemura ,  Satoshi Kamiyama

IPC分类号： H01S5/20 ,  H01S5/223 ,  H01S5/327 ,  H01S5/347 ,  H01S3/19

CPC分类号： B82Y20/00 ,  H01S5/347 ,  H01S5/204 ,  H01S5/2231 ,  H01S5/327

摘要： A semiconductor laser includes: an active layer formed of a II-VI group compound semiconductor material; a first cladding layer and a second cladding layer disposed so as to put the active layer therebetween; a light confinement layer provided on the second cladding layer, having an opening for current flow and formed of ZnMgSSe; and a third cladding layer provided at the opening of the light confinement layer. The light confinement layer has high resistivity or has a conductivity type opposite to that of the third cladding layer; the second and third cladding layers are formed of ZnMgSSe; and a Mg content and a S content of the light confinement layer are larger than a Mg content and a S content of the second and third cladding layers.

摘要翻译： 半导体激光器包括：由II-VI族化合物半导体材料形成的有源层; 第一包层和第二包层，其设置成将活性层置于其间; 设置在第二包覆层上的光限制层，具有用于电流流动并由ZnMgSSe形成的开口; 以及设置在所述光限制层的开口处的第三包层。 光限制层具有高电阻率或具有与第三覆层相反的导电类型; 第二和第三覆层由ZnMgSSe形成; 并且所述光限制层的Mg含量和S含量大于所述第二和第三包层的Mg含量和S含量。

公开(公告)号：US09412586B2

公开(公告)日：2016-08-09

申请号：US13517970

申请日：2009-12-25

申请人： Hiroshi Amano ,  Satoshi Kamiyama ,  Myunghee Kim ,  Cyril Pernot ,  Akira Hirano

发明人： Hiroshi Amano ,  Satoshi Kamiyama ,  Myunghee Kim ,  Cyril Pernot ,  Akira Hirano

IPC分类号： C30B25/18 ,  H01L21/02 ,  C30B29/40 ,  H01L33/00

CPC分类号： C30B25/183 ,  C30B25/186 ,  C30B29/403 ,  C30B29/406 ,  H01L21/0242 ,  H01L21/0243 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02647 ,  H01L21/0265 ,  H01L33/007 ,  Y10T428/24529

摘要： A surface of a sapphire (0001) substrate is processed to form recesses and protrusions so that protrusion tops are flat and a given plane-view pattern is provided. An initial-stage AlN layer is grown on the surface of the sapphire (0001) substrate having recesses and protrusions by performing a C+ orientation control so that a C+ oriented AlN layer is grown on flat surfaces of the protrusion tops, excluding edges, in such a thickness that the recesses are not completely filled and the openings of the recesses are not closed. An AlxGayN(0001) layer (1≧x>0, x+y=1) is epitaxially grown on the initial-stage AlN layer by a lateral overgrowth method. The recesses are covered with the AlxGayN(0001) layer laterally overgrown from above the protrusion tops. Thus, an template for epitaxial growth having a fine and flat surface and a reduced threading dislocation density is produced.

摘要翻译： 处理蓝宝石（0001）基板的表面以形成凹部和突起，使得凸起顶部是平坦的，并且提供给定的平面视图图案。 通过进行C +取向控制，在具有凹凸的蓝宝石（0001）基板的表面上生长初始阶段的AlN层，使得C +取向的AlN层生长在突出顶部的平坦表面上，不包括边缘 凹部未被完全填充且凹部的开口未被封闭的厚度。 通过横向过度生长法在初始阶段AlN层上外延生长Al x Ga y N（0001）层（1≥x> 0，x + y = 1）。 这些凹槽被从突起顶部上方横向长满的AlxGayN（0001）层覆盖。 因此，产生具有细小平坦表面和减少穿透位错密度的外延生长的模板。

公开(公告)号：US07612381B2

公开(公告)日：2009-11-03

申请号：US11710744

申请日：2007-02-26

申请人： Satoshi Kamiyama ,  Hiroshi Amano ,  Motoaki Iwaya ,  Isamu Akasaki ,  Hideki Kasugai

发明人： Satoshi Kamiyama ,  Hiroshi Amano ,  Motoaki Iwaya ,  Isamu Akasaki ,  Hideki Kasugai

IPC分类号： H01L33/00

CPC分类号： H01L33/22 ,  H01L33/38 ,  H01L2933/0016

摘要： The present invention discloses a method for fabricating a semiconductor device, comprising: providing a translucent portion; forming a covering layer comprised of one or more metals on the translucent portion by vapor deposition; providing kinetic energy to the covering layer for forming a periodic mask; forming a periodic structure on the translucent portion by using the periodic mask.

摘要翻译： 本发明公开了一种制造半导体器件的方法，包括：提供半透明部分; 通过气相沉积在半透明部分上形成由一种或多种金属构成的覆盖层; 向覆盖层提供动能以形成周期性掩模; 通过使用周期性掩模在半透明部分上形成周期性结构。