METHODS AND SYSTEMS FOR POINT OF USE REMOVAL OF SACRIFICIAL MATERIAL
    32.
    发明申请
    METHODS AND SYSTEMS FOR POINT OF USE REMOVAL OF SACRIFICIAL MATERIAL 有权
    使用移除材料的方法和系统

    公开(公告)号:US20150206762A1

    公开(公告)日:2015-07-23

    申请号:US14676697

    申请日:2015-04-01

    CPC classification number: H01L21/31105 G01N27/4145 H01L21/31144

    Abstract: A method of manufacturing a sensor, the method including forming an array of chemically-sensitive field effect transistors (chemFETs), depositing a dielectric layer over the chemFETs in the array, depositing a protective layer over the dielectric layer, etching the dielectric layer and the protective layer to form cavities corresponding to sensing surfaces of the chemFETs, and removing the protective layer. The method further includes, etching the dielectric layer and the protective layer together to form cavities corresponding to sensing surfaces of the chemFETs. The protective layer is at least one of a polymer, photoresist material, noble metal, copper oxide, and zinc oxide. The protective protective layer is removed using at least one of sodium hydroxide, organic solvent, aqua regia, ammonium carbonate, hydrochloric acid, acetic acid, and phosphoric acid.

    Abstract translation: 一种制造传感器的方法,所述方法包括形成化学敏感场效应晶体管阵列(chemFET),在阵列中的chemFET上沉积电介质层,在电介质层上沉积保护层,蚀刻电介质层和 保护层以形成对应于chemFET的感测表面的空腔,以及去除保护层。 该方法还包括:将电介质层和保护层一起蚀刻以形成对应于chemFET的感测表面的空腔。 保护层是聚合物,光致抗蚀剂材料,贵金属,氧化铜和氧化锌中的至少一种。 使用氢氧化钠,有机溶剂,王水,碳酸铵,盐酸,乙酸和磷酸中的至少一种除去保护性保护层。

    Chemical Coating of Microwell for Electrochemical Detection Device
    33.
    发明申请
    Chemical Coating of Microwell for Electrochemical Detection Device 有权
    电化学检测装置的微孔化学涂层

    公开(公告)号:US20140113303A1

    公开(公告)日:2014-04-24

    申请号:US14139647

    申请日:2013-12-23

    Abstract: The described embodiments may provide a method of fabricating a chemical detection device. The method may comprise forming a microwell above a CMOS device. The microwell may comprise a bottom surface and sidewalls. The method may further comprise applying a first chemical to be selectively attached to the bottom surface of the microwell, forming a metal oxide layer on the sidewalls of the microwell, and applying a second chemical to be selectively attached to the sidewalls of the microwell. The second chemical may lack an affinity to the first chemical.

    Abstract translation: 所描述的实施例可以提供一种制造化学检测装置的方法。 该方法可以包括在CMOS器件上形成微孔。 微孔可以包括底表面和侧壁。 该方法可以进一步包括施加第一化学物质以选择性地连接到微孔的底表面,在微孔的侧壁上形成金属氧化物层,以及施加第二化学物质以选择性地连接到微孔的侧壁。 第二种化学物质可能与第一种化学物质不具有亲和力。

    Methods and Apparatus for Measuring Analytes Using Large Scale FET Arrays

    公开(公告)号:US20220340965A1

    公开(公告)日:2022-10-27

    申请号:US17738427

    申请日:2022-05-06

    Abstract: Methods and apparatus relating to very large scale FET arrays for analyte measurements. ChemFET (e.g., ISFET) arrays may be fabricated using conventional CMOS processing techniques based on improved FET pixel and array designs that increase measurement sensitivity and accuracy, and at the same time facilitate significantly small pixel sizes and dense arrays. Improved array control techniques provide for rapid data acquisition from large and dense arrays. Such arrays may be employed to detect a presence and/or concentration changes of various analyte types in a wide variety of chemical and/or biological processes. In one example, chemFET arrays facilitate DNA sequencing techniques based on monitoring changes in hydrogen ion concentration (pH), changes in other analyte concentration, and/or binding events associated with chemical processes relating to DNA synthesis.

Patent Agency Ranking