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118 条记录 (耗时 0.039 秒)

    Method of manufacturing organic EL device, and organic EL device
    33.
    发明授权
    Method of manufacturing organic EL device, and organic EL device 有权
    制造有机EL器件的方法和有机EL器件

    公开(公告)号：US07131881B2

    公开(公告)日：2006-11-07

    申请号：US10734251

    申请日：2003-12-15

    申请人： Nobuo Sasaki

    发明人： Nobuo Sasaki

    IPC分类号： H05B33/02 ,  H05B33/10

    CPC分类号： H01L51/56 ,  H01L27/3216 ,  H01L27/3218 ,  H01L27/3244 ,  H01L51/0003

    摘要： Grooves (3R, 3G, 3B) corresponding to red, green and blue respectively are formed on a substrate (40), and the edge portion of each groove (3R, 3G, 3B) is formed so as to be farther from a side of substrate (40) in order. The edge portion of each groove (3R, 3G, 3B) is immersed in an organic EL solution (8R, 8G, 8B) of corresponding color, the grooves (3R, 3G, 3B) are severally filled with the organic EL solution (8R, 8G, 8B) of corresponding color using capillary phenomenon, and thus a full-color organic EL display device is manufactured.

    摘要翻译： 在基板（40）上分别形成对应于红色，绿色和蓝色的沟槽（3R，3G，3B），并且形成每个凹槽（3R，3G，3B）的边缘部分，以便 离开基板（40）的一侧更远。 将各槽（3R，3G，3B）的边缘部分浸渍在相应颜色的有机EL溶液（8 ​​R，8 G，8 B）中，槽（3 R，3 G，3 B） 使用毛细管现象分别填充相应颜色的有机EL溶液（8R，8G，8B），从而制造全色有机EL显示装置。

    Information processing apparatus with a cache memory and information processing method
    35.
    发明申请
    Information processing apparatus with a cache memory and information processing method 有权
    具有高速缓冲存储器和信息处理方法的信息处理装置

    公开(公告)号：US20050275658A1

    公开(公告)日：2005-12-15

    申请号：US11141700

    申请日：2005-05-31

    申请人： Nobuo Sasaki ,  Takeshi Yamazaki ,  Atsushi Kunimatsu ,  Hideki Yasukawa

    发明人： Nobuo Sasaki ,  Takeshi Yamazaki ,  Atsushi Kunimatsu ,  Hideki Yasukawa

    IPC分类号： G06F12/08 ,  G06F12/00 ,  G09G5/36

    CPC分类号： G06F12/0844 ,  G06F12/0862 ,  G06F12/0864 ,  G06F2212/6024

    摘要： A secondary texture cache is used commonly by a plurality of texture units, and stores part of texture data in a main memory. A cache controlling CPU controls a refill operation from the main memory to the secondary texture cache in accordance with cache misses of the plurality of texture units, so as to suppress occurrence of thrashing in the secondary texture cache. The cache controlling CPU suppresses occurrence of the refill operation when the plurality of operating units access an identical memory address with a predetermined time difference.

    摘要翻译： 二次纹理缓存由多个纹理单元通常使用，并将纹理数据的一部分存储在主存储器中。 高速缓存控制CPU根据多个纹理单元的高速缓存未命中来控制从主存储器到次纹理高速缓存的再填充操作，以便抑制二次纹理高速缓存中的抖动的发生。 当多个操作单元以预定的时间差访问相同的存储器地址时，高速缓存控制CPU抑制再填充操作的发生。

    Semiconductor thin film forming method and semiconductor device
    37.
    发明申请
    Semiconductor thin film forming method and semiconductor device 有权
    半导体薄膜形成方法和半导体器件

    公开(公告)号：US20050236692A1

    公开(公告)日：2005-10-27

    申请号：US11167320

    申请日：2005-06-28

    申请人： Akito Hara ,  Nobuo Sasaki

    发明人： Akito Hara ,  Nobuo Sasaki

    IPC分类号： H01L21/20 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L29/04 ,  H01L29/786 ,  H01L31/107

    CPC分类号： H01L21/02686 ,  H01L21/02532 ,  H01L21/2026 ,  H01L27/1281 ,  H01L29/04 ,  H01L29/66757 ,  H01L29/66772 ,  H01L29/78654 ,  H01L29/78675 ,  H01L29/78696

    摘要： A polycrystal thin film forming method comprising the step of forming a semiconductor thin film on a substrate 14, and the step of flowing a heated gas to the semiconductor thin film while an energy beam 38 is being applied to the semiconductor thin film at a region to which the gas is being applied to thereby melt the semiconductor film, and crystallizing the semiconductor thin film in its solidification. The energy beam is applied while the high-temperature gas is being flowed, whereby the melted semiconductor thin film can have low solidification rate, whereby the polycrystal thin film can have large crystal grain diameters and can have good quality of little defects in crystal grains and little twins.

    摘要翻译： 一种多晶薄膜形成方法，包括在衬底14上形成半导体薄膜的步骤，以及将能量束38在一个区域施加到半导体薄膜的同时使加热的气体流到半导体薄膜的步骤， 将该气体施加于熔融半导体膜，并使其半导体薄膜凝固。 当高温气体流动时施加能量束，由此熔融的半导体薄膜可以具有低固化速率，由此多晶薄膜可以具有大的晶粒直径，并且可以具有良好的晶粒缺陷质量， 小双胞胎

    Semiconductor thin film crystallization method
    38.
    发明申请
    Semiconductor thin film crystallization method 有权
    半导体薄膜结晶法

    公开(公告)号：US20050167663A1

    公开(公告)日：2005-08-04

    申请号：US11093845

    申请日：2005-03-30

    申请人： Nobuo Sasaki

    发明人： Nobuo Sasaki

    IPC分类号： H01L21/00 ,  H01L21/20 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/01 ,  H01L29/04 ,  H01L31/036

    CPC分类号： H01L21/02683 ,  H01L21/02691 ,  H01L21/2026 ,  H01L27/1281 ,  H01L29/6675

    摘要： The semiconductor thin film crystallization method comprises the step of forming a semiconductor thin film 14 over a substrate 10; the step of forming band-shaped portion 16 for blocking crystal growth of the semiconductor thin film in the semiconductor film or over the semiconductor film; and the step of causing an energy beam 18 of a continuous wave to scan in a direction intersecting the longitudinal direction of the portion for blocking crystal growth. The energy beam is caused to scan, intersecting the portion for blocking the crystal growth, whereby the crystal growth can be interrupted when the application region of the energy beam intersects the portions for blocking the crystal growth. Even when a solid semiconductor thin film which is not patterned in islands is crystallized, the semiconductor thin film of good crystals can be formed with high yields while the film is prevented from peeling.

    摘要翻译： 半导体薄膜结晶方法包括在衬底10上形成半导体薄膜14的步骤; 形成用于阻挡半导体薄膜中的半导体薄膜或半导体薄膜上的半导体薄膜的晶体生长的带状部分16的步骤; 以及使连续波的能量束18沿与用于阻挡晶体生长的部分的长度方向相交的方向进行扫描的步骤。 能量束被扫描，与该部分交叉以阻止晶体生长，由此当能量束的施加区域与用于阻挡晶体生长的部分相交时，晶体生长可被中断。 即使当在岛上未图案化的固体半导体薄膜结晶化时，也可以在不防止膜剥离的情况下以高产率形成良好晶体的半导体薄膜。

    System and method of optimizing graphics processing
    39.
    发明授权
    System and method of optimizing graphics processing 有权
    优化图形处理的系统和方法

    公开(公告)号：US06919896B2

    公开(公告)日：2005-07-19

    申请号：US10095213

    申请日：2002-03-11

    申请人： Nobuo Sasaki ,  Takeshi Yamazaki

    发明人： Nobuo Sasaki ,  Takeshi Yamazaki

    IPC分类号： G06T11/00 ,  G06F9/50 ,  G06T1/20 ,  G06T15/00 ,  G09G5/393 ,  G06F15/80

    CPC分类号： G06F9/5083 ,  G06F9/5066 ,  G06F2209/501 ,  G06T1/20 ,  G06T15/005 ,  G06T2210/52 ,  G09G5/393 ,  G09G2360/121

    摘要： A method and system for optimizing the processing of graphics is disclosed. The system may comprise at least one geometry processor and at least one graphics processor. A communication channel permits communication between the geometry and graphics processors. A control processor may communicate with the geometry and graphics processor through the communications channel. A method of processing graphics data in a computer system is provided to determine whether the geometry and graphics processors are being efficiently utilized. If necessary, one or more of the geometry and graphics processors are selectively assigned or unassigned to improve the efficiency of the graphics processing circuitry in performing the graphics task.

    摘要翻译： 公开了一种用于优化图形处理的方法和系统。 该系统可以包括至少一个几何处理器和至少一个图形处理器。 通信通道允许几何和图形处理器之间的通信。 控制处理器可以通过通信信道与几何和图形处理器进行通信。 提供了一种在计算机系统中处理图形数据的方法，以确定几何图形处理器是否被有效利用。 如果需要，一个或多个几何和图形处理器被选择性地分配或未分配，以提高图形处理电路在执行图形任务时的效率。

    Common transfer material, liquid crystal panel, method for manufacturing liquid crystal panel
    40.
    发明申请
    Common transfer material, liquid crystal panel, method for manufacturing liquid crystal panel 审中-公开
    普通转印材料，液晶面板，液晶面板制造方法

    公开(公告)号：US20050087727A1

    公开(公告)日：2005-04-28

    申请号：US10504914

    申请日：2003-04-17

    申请人： Nobuo Sasaki ,  Tazoh Ikeguchi ,  Makoto Nakahara

    发明人： Nobuo Sasaki ,  Tazoh Ikeguchi ,  Makoto Nakahara

    IPC分类号： G02F1/1339 ,  G02F1/1341 ,  H01C1/00

    CPC分类号： G02F1/1341 ,  G02F1/1339 ,  G02F2001/13415

    摘要： A common transfer material is provided that is used for a common transfer electrode provided between electrodes formed adjacently on respective inner sides of paired substrates facing each other. The common transfer material contains a resin and electrically-conductive and has a content of non-electrically-conductive filler that is at least 0 part by mass and at most 1 part by mass with respect to 100 parts by mass of the resin. A liquid-crystal panel using the common transfer material as well as a method of manufacturing the liquid-crystal panel are provided. The common transfer material with which the reliability of the liquid-crystal panel can be improved, the liquid-crystal panel using the common transfer material and the method of manufacturing the liquid-crystal panel can thus be provided.

    摘要翻译： 提供了一种共同的转印材料，其用于设置在彼此面对的成对基板的相应内侧上相邻形成的电极之间的公共转印电极。 普通转印材料含有树脂并具有导电性，相对于100质量份树脂，其含量为至少0质量份至多1质量份。 提供使用普通转印材料的液晶面板以及制造液晶面板的方法。 因此，能够提高液晶面板的可靠性的普通转印材料，可以提供使用普通转印材料的液晶面板和制造液晶面板的方法。