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    Radiation-emitting semiconductor chip
    33.
    发明授权
    Radiation-emitting semiconductor chip 有权
    辐射发射半导体芯片

    公开(公告)号：US09590008B2

    公开(公告)日：2017-03-07

    申请号：US14702807

    申请日：2015-05-04

    Applicant: OSRAM Opto Semiconductors GmbH

    Inventor： Jürgen Moosburger ,  Norwin von Malm ,  Patrick Rode ,  Lutz Höppel ,  Karl Engl

    IPC: H01L33/62 ,  H01L27/15 ,  H01L33/38 ,  H01L33/00 ,  H01L33/02

    CPC classification number: H01L27/15 ,  H01L25/167 ,  H01L33/005 ,  H01L33/02 ,  H01L33/08 ,  H01L33/382 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2933/0016 ,  H01L2924/00

    Abstract: A radiation-emitting semiconductor chip includes a carrier and a semiconductor body having a semiconductor layer sequence, wherein an emission region and a protective diode region are formed in the semiconductor body having the semiconductor layer sequence; the semiconductor layer sequence includes an active region that generates radiation and is arranged between a first semiconductor layer and a second semiconductor layer; the first semiconductor layer is arranged on a side of the active region facing away from the carrier; the emission region has a recess extending through the active region; the first semiconductor layer, in the emission region, electrically conductively connects to a first connection layer, wherein the first connection layer extends in the recess from the first semiconductor layer toward the carrier; the second semiconductor layer, in the emission region, electrically conductively connects to a second connection layer.

    Abstract translation: 辐射发射半导体芯片包括具有半导体层序列的载体和半导体本体，其中在具有半导体层序列的半导体主体中形成发光区域和保护二极管区域; 半导体层序列包括产生辐射并且被布置在第一半导体层和第二半导体层之间的有源区; 第一半导体层布置在有源区域背离载体的一侧; 发射区域具有延伸穿过有源区域的凹部; 发射区域中的第一半导体层导电地连接到第一连接层，其中第一连接层在凹部中从第一半导体层向载体延伸; 在发射区域中的第二半导体层导电地连接到第二连接层。

    Optoelectronic Semiconductor Chip
    34.
    发明申请
    Optoelectronic Semiconductor Chip 审中-公开
    光电半导体芯片

    公开(公告)号：US20160260870A1

    公开(公告)日：2016-09-08

    申请号：US15156802

    申请日：2016-05-17

    Applicant: OSRAM Opto Semiconductors GmbH

    Inventor： Markus Maute ,  Karl Engl ,  Sebastian Taeger ,  Robert Walter ,  Johannes Stocker

    IPC: H01L33/46 ,  H01L33/38 ,  H01L33/42 ,  H01L33/06 ,  H01L33/32

    CPC classification number: H01L33/46 ,  H01L33/06 ,  H01L33/20 ,  H01L33/32 ,  H01L33/382 ,  H01L33/405 ,  H01L33/42 ,  H01L33/60 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: An optoelectronic semiconductor chip is disclosed. In an embodiment the optoelectronic semiconductor chip includes a semiconductor body of semiconductor material, a p-contact layer and an n-contact layer. The semiconductor body includes an active layer intended for generating radiation. The semiconductor body includes a p-side and an n-side, between which the active layer is arranged. The p-contact layer is intended for electrical contacting the p-side. The n-contact layer is intended for electrical contacting the n-side 1b. The n-contact layer contains a TCO layer and a mirror layer, the TCO-layer being arranged between the n-side of the semiconductor body and the mirror layer.

    Abstract translation: 公开了一种光电半导体芯片。 在一个实施例中，光电子半导体芯片包括半导体材料的半导体本体，p接触层和n接触层。 半导体主体包括用于产生辐射的有源层。 半导体本体包括p侧和n侧，其间布置有源层。 p接触层用于电接触p侧。 n接触层用于电接触n侧1b。 n接触层包含TCO层和镜层，TCO层布置在半导体主体的n侧和镜面层之间。

    Optoelectronic Semiconductor Chip and Optoelectronic Component
    35.
    发明申请
    Optoelectronic Semiconductor Chip and Optoelectronic Component 有权
    光电半导体芯片和光电元件

    公开(公告)号：US20160225749A1

    公开(公告)日：2016-08-04

    申请号：US15021393

    申请日：2014-09-10

    Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

    Inventor： Christian Leirer ,  Berthold Hahn ,  Roland Zeisel ,  Johannes Baur ,  Karl Engl

    IPC: H01L25/16 ,  H01L33/48 ,  H01L33/62

    CPC classification number: H01L25/167 ,  H01L25/0753 ,  H01L27/15 ,  H01L27/156 ,  H01L33/382 ,  H01L33/483 ,  H01L33/62 ,  H01L2224/16225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48479 ,  H01L2924/00014 ,  H01L2924/0002 ,  H01L2933/0016 ,  H01L2224/48471 ,  H01L2924/00 ,  H01L2224/4554

    Abstract: An optoelectronic semiconductor chip includes a semiconductor layer sequence. The semiconductor layer sequence includes a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type, and an active zone having a p-n junction, which active zone is formed between the first semiconductor region and the second semiconductor region. The semiconductor layer sequence is arranged on a carrier. The semiconductor chip also includes a first contact, which is provided for electrically connecting the first semiconductor region, and a second contact, which is different from the first contact and which is provided for electrically connecting the second semiconductor region. In addition, the semiconductor chip includes a first capacitive electrical element, which is connected in parallel with the p-n junction and which has a first dielectric element.

    Abstract translation: 光电半导体芯片包括半导体层序列。 半导体层序列包括第一导电类型的第一半导体区域，第二导电类型的第二半导体区域和具有p-n结的有源区，该有源区形成在第一半导体区域和第二半导体区域之间。 半导体层序列布置在载体上。 半导体芯片还包括第一触点，其设置用于电连接第一半导体区域，第二触点与第一触点不同，并且用于电连接第二半导体区域。 此外，半导体芯片包括与p-n结并联连接并具有第一介电元件的第一电容电元件。

    OPTOELECTRONIC SEMICONDUCTOR CHIP ENCAPSULATED WITH AN ALD LAYER AND CORRESPONDING METHOD OF PRODUCTION
    36.
    发明申请
    OPTOELECTRONIC SEMICONDUCTOR CHIP ENCAPSULATED WITH AN ALD LAYER AND CORRESPONDING METHOD OF PRODUCTION 审中-公开
    带有ALD层的光电子半导体芯片和相应的生产方法

    公开(公告)号：US20160005930A1

    公开(公告)日：2016-01-07

    申请号：US14769125

    申请日：2014-03-14

    Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

    Inventor： Karl Engl ,  Georg Hartung ,  Markus Maute

    IPC: H01L33/46 ,  H01L33/38 ,  H01L33/54

    CPC classification number: H01L33/46 ,  H01L33/382 ,  H01L33/405 ,  H01L33/44 ,  H01L33/54 ,  H01L2924/0002 ,  H01L2933/0025 ,  H01L2933/005 ,  H01L2924/00

    Abstract: An optoelectronic semiconductor chip includes a semiconductor body including n-conducting and p-conducting regions, an active region generating electromagnetic radiation, a mirror layer reflecting the electromagnetic radiation, and an encapsulating layer sequence formed with an insulating material, wherein the mirror layer is arranged at an underside of the p-conducting region, the active region is arranged at a side of the p-conducting region facing away from the mirror layer, the n-conducting region is arranged at a side of the active region facing away from the p-conducting region, the encapsulation layer sequence covers the semiconductor body at the outer surface thereof in places, the encapsulation layer sequence extends at the outer surface of the semiconductor body from the active region along the p-conducting region as far as below the mirror layer, and the encapsulation layer sequence includes at least one encapsulation layer which is an ALD layer or consists of an ALD layer.

    Abstract translation: 光电子半导体芯片包括：半导体本体，其包括n导电和p导电区域，产生电磁辐射的有源区域，反射电磁辐射的反射镜层以及由绝缘材料形成的封装层序列，其中所述镜层布置 在p导电区域的下侧，有源区域布置在p导电区域背离镜面层的一侧，n导电区域布置在有源区域背离p的一侧 封装层序列在其外表面覆盖半导体本体，封装层序列在半导体本体的外表面沿着p导电区域的有源区域延伸到镜面层的下方 ，并且封装层序列包括至少一个作为ALD层或由ALD层组成的封装层。

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