公开(公告)号：US20100032793A1

公开(公告)日：2010-02-11

申请号：US12341852

申请日：2008-12-22

申请人： Pascal Guenard ,  Bruce Faure ,  Fabrice Letertre ,  Michael R. Krames ,  Nathan F. Gardner ,  Melvin B. McLaurin

发明人： Pascal Guenard ,  Bruce Faure ,  Fabrice Letertre ,  Michael R. Krames ,  Nathan F. Gardner ,  Melvin B. McLaurin

IPC分类号： H01L27/00 ,  H01L21/02 ,  H01L21/46

CPC分类号： H01L33/0079 ,  H01L21/6835 ,  H01L31/1848 ,  H01L31/1852 ,  H01L31/1892 ,  H01L33/007 ,  H01L33/0095 ,  H01L33/025 ,  H01L2221/68359 ,  Y02E10/544 ,  Y02P70/521

摘要： The present invention provides methods for forming at least partially relaxed strained material layers on a target substrate. The methods include forming islands of the strained material layer on an intermediate substrate, at least partially relaxing the strained material islands by a first heat treatment, and transferring the at least partially relaxed strained material islands to the target substrate. The at least partial relaxation is facilitated by the presence of low-viscosity or compliant layers adjacent to the strained material layer. The invention also provides semiconductor structures having an at least partially relaxed strained material layer, and semiconductor devices fabricated using an at least partially relaxed strained material layer.

摘要翻译： 本发明提供了在目标基底上形成至少部分松弛的应变材料层的方法。 所述方法包括在中间衬底上形成应变材料层的岛，通过第一热处理至少部分地松弛应变材料岛，并将至少部分松弛的应变材料岛转移到目标衬底。 通过存在与应变材料层相邻的低粘度或柔顺层，促进了至少部分松弛。 本发明还提供了具有至少部分松弛的应变材料层的半导体结构，以及使用至少部分松弛的应变材料层制造的半导体器件。

公开(公告)号：US06822991B2

公开(公告)日：2004-11-23

申请号：US10261534

申请日：2002-09-30

申请人： William D. Collins, III ,  Nathan F. Gardner ,  Arto V. Nurmikko

发明人： William D. Collins, III ,  Nathan F. Gardner ,  Arto V. Nurmikko

IPC分类号： H01S500

CPC分类号： H01L33/04 ,  H01L27/15 ,  H01L33/0016 ,  H01L33/08 ,  H01L33/10 ,  H01L33/46 ,  H01S5/0224 ,  H01S5/02288 ,  H01S5/18341 ,  H01S5/3095

摘要： A light emitting device includes a first active region, a second active region, and a tunnel junction. The tunnel junction includes a layer of first conductivity type and a layer of second conductivity type, both thinner than a layer of first conductivity type and a layer of second conductivity type surrounding the first active region. The tunnel junction permits vertical stacking of the active regions, which may increase the light generated by a device without increasing the size of the source.

摘要翻译： 发光器件包括第一有源区，第二有源区和隧道结。 隧道结包括第一导电类型的层和比第一导电类型的层薄的第二导电类型的层和围绕第一有源区的第二导电类型的层。 隧道结允许有源区域的垂直堆叠，这可以增加由器件产生的光而不增加源的尺寸。

公开(公告)号：US5656538A

公开(公告)日：1997-08-12

申请号：US410782

申请日：1995-03-24

申请人： Nathan F. Gardner ,  Stephen A. Stockman ,  Quesnell J. Hartmann ,  Gregory E. Stillman

发明人： Nathan F. Gardner ,  Stephen A. Stockman ,  Quesnell J. Hartmann ,  Gregory E. Stillman

IPC分类号： H01L21/205 ,  H01L21/20

CPC分类号： H01L21/02392 ,  H01L21/02461 ,  H01L21/02543 ,  H01L21/02573 ,  H01L21/0262 ,  Y10S148/003 ,  Y10S148/064 ,  Y10S438/918

摘要： A process for growing semi-insulating layers of indium phosphide and other group III-V materials through the use of halide dopant or etchant introduction during growth. Gas phase epitaxial growth techniques are utilized at low temperatures to produce indium phosphide layers having a resistivity greater than approximately 10.sup.7 ohm-cm. According to the preferred embodiment carbon tetrachloride is used as a dopant at flow rates above 5 sccm to grow the layers with substrate growth temperatures ranging from approximately 460.degree. C. to 525.degree. C. This temperature range provides an advantage over the transition metal techniques for doping indium phosphide since the high temperatures generally required for those techniques limit the ability to control growth. Good surface morphology is also obtained through the growth according to the present invention. The process may be used to form many types of group III-V semiconductor devices.

摘要翻译： 在生长期间通过使用卤素掺杂剂或蚀刻剂引入生长磷化铟和其它III-V族材料的半绝缘层的方法。 在低温下使用气相外延生长技术产生电阻率大于约107欧姆 - 厘米的磷化铟层。 根据优选的实施方案，四氯化碳以5sccm以上的流速用作掺杂剂，以生长基底生长温度为约460℃至525℃的层。该温度范围优于过渡金属技术 掺杂磷化铟，因为这些技术通常需要的高温限制了控制生长的能力。 通过根据本发明的生长也可获得良好的表面形态。 该方法可用于形成许多类型的III-V族III族半导体器件。

公开(公告)号：US08288186B2

公开(公告)日：2012-10-16

申请号：US12887853

申请日：2010-09-22

申请人： Michael R. Krames ,  Nathan F. Gardner ,  John E. Epler

发明人： Michael R. Krames ,  Nathan F. Gardner ,  John E. Epler

IPC分类号： H01L21/20 ,  H01L21/301

CPC分类号： H01L21/76256 ,  C30B25/183 ,  C30B29/40 ,  C30B29/403 ,  H01L21/76254 ,  H01L33/007 ,  H01L33/0079

摘要： A substrate including a host and a seed layer bonded to the host is provided, then a semiconductor structure including a light emitting layer disposed between an n-type region and a p-type region is grown on the seed layer. In some embodiments, a bonding layer bonds the host to the seed layer. The seed layer may be thinner than a critical thickness for relaxation of strain in the semiconductor structure, such that strain in the semiconductor structure is relieved by dislocations formed in the seed layer, or by gliding between the seed layer and the bonding layer an interface between the two layers. In some embodiments, the host may be separated from the semiconductor structure and seed layer by etching away the bonding layer.

公开(公告)号：US20120205691A1

公开(公告)日：2012-08-16

申请号：US13448453

申请日：2012-04-17

申请人： Sungsoo Yi ,  Nathan F. Gardner ,  Qi Laura Ye

发明人： Sungsoo Yi ,  Nathan F. Gardner ,  Qi Laura Ye

IPC分类号： H01L33/22 ,  H01L33/32

CPC分类号： H01L33/007 ,  H01L33/04 ,  H01L33/12 ,  H01S5/32341

摘要： A device includes a semiconductor structure comprising a III-nitride light emitting layer disposed between an n-type region and a p-type region and a plurality of layer pairs disposed within one of the n-type region and the p-type region. Each layer pair includes an InGaN layer and pit-filling layer in direct contact with the InGaN layer. The pit-filling layer may fill in pits formed in the InGaN layer.

摘要翻译： 一种器件包括：半导体结构，包括设置在n型区域和p型区域之间的III族氮化物发光层和设置在n型区域和p型区域之一内的多个层对。 每层对包括与InGaN层直接接触的InGaN层和凹坑填充层。 凹坑填充层可以填充形成在InGaN层中的凹坑。

公开(公告)号：US08183577B2

公开(公告)日：2012-05-22

申请号：US12495258

申请日：2009-06-30

申请人： Sungsoo Yi ,  Nathan F. Gardner ,  Qi Laura Ye

发明人： Sungsoo Yi ,  Nathan F. Gardner ,  Qi Laura Ye

IPC分类号： H01L29/72

CPC分类号： H01L33/007 ,  H01L33/04 ,  H01L33/12 ,  H01S5/32341

摘要： A device includes a semiconductor structure comprising a III-nitride light emitting layer disposed between an n-type region and a p-type region and a plurality of layer pairs disposed within one of the n-type region and the p-type region. Each layer pair includes an InGaN layer and pit-filling layer in direct contact with the InGaN layer. The pit-filling layer may fill in pits formed in the InGaN layer.

摘要翻译： 一种器件包括：半导体结构，包括设置在n型区域和p型区域之间的III族氮化物发光层和设置在n型区域和p型区域之一内的多个层对。 每层对包括与InGaN层直接接触的InGaN层和凹坑填充层。 凹坑填充层可以填充形成在InGaN层中的凹坑。

公开(公告)号：US08163575B2

公开(公告)日：2012-04-24

申请号：US11156105

申请日：2005-06-17

申请人： Jonathan J. Wierer, Jr. ,  Michael R. Krames ,  Nathan F. Gardner

发明人： Jonathan J. Wierer, Jr. ,  Michael R. Krames ,  Nathan F. Gardner

IPC分类号： H01L21/00

CPC分类号： C30B29/60 ,  B82Y20/00 ,  G02B6/1225 ,  H01L33/08 ,  H01L33/18 ,  H01L33/24 ,  H01L2933/0083 ,  H01S5/105 ,  H01S5/34333

摘要： A photonic crystal is grown within a semiconductor structure, such as a III-nitride structure, which includes a light emitting region disposed between an n-type region and a p-type region. The photonic crystal may be multiple regions of semiconductor material separated by a material having a different refractive index than the semiconductor material. For example, the photonic crystal may be posts of semiconductor material grown in the structure and separated by air gaps or regions of masking material. Growing the photonic crystal, rather than etching a photonic crystal into an already-grown semiconductor layer, avoids damage caused by etching which may reduce efficiency, and provides uninterrupted, planar surfaces on which to form electric contacts.

摘要翻译： 光子晶体在诸如III族氮化物结构的半导体结构内生长，其包括设置在n型区域和p型区域之间的发光区域。 光子晶体可以是由具有与半导体材料不同的折射率的材料分离的半导体材料的多个区域。 例如，光子晶体可以是在结构中生长并由气隙或掩模材料区域分离的半导体材料的柱。 生长光子晶体，而不是将光子晶体蚀刻成已经生长的半导体层，避免了蚀刻造成的损伤，这可能降低效率，并提供不间断的平面，在其上形成电触点。

公开(公告)号：US08154052B2

公开(公告)日：2012-04-10

申请号：US12775201

申请日：2010-05-06

申请人： Nathan F. Gardner ,  Aurelien J. F. David ,  Oleg B. Shchekin

发明人： Nathan F. Gardner ,  Aurelien J. F. David ,  Oleg B. Shchekin

IPC分类号： H01L31/072 ,  H01L31/109 ,  H01L31/0238 ,  H01L31/0336

CPC分类号： H01L33/50 ,  H01L33/007 ,  H01L33/22 ,  H01L2924/0002 ,  H01L2924/00

摘要： In some embodiments of the invention, a device includes a substrate and a semiconductor structure. The substrate includes a wavelength converting element comprising a wavelength converting material disposed in a transparent material, a seed layer comprising a material on which III-nitride material will nucleate, and a bonding layer disposed between the wavelength converting element and the seed layer. The semiconductor structure includes a III-nitride light emitting layer disposed between an n-type region and a p-type region, and is grown on the seed layer.

摘要翻译： 在本发明的一些实施例中，器件包括衬底和半导体结构。 衬底包括波长转换元件，其包括设置在透明材料中的波长转换材料，种子层，其包含III族氮化物材料将成核的材料，以及配置在波长转换元件和籽晶层之间的接合层。 半导体结构包括设置在n型区域和p型区域之间的III族氮化物发光层，并且在籽晶层上生长。

公开(公告)号：US08105852B2

公开(公告)日：2012-01-31

申请号：US12688382

申请日：2010-01-15

申请人： Nathan F. Gardner ,  Michael R. Krames ,  Melvin B. McLaurin ,  Sungsoo Yi

发明人： Nathan F. Gardner ,  Michael R. Krames ,  Melvin B. McLaurin ,  Sungsoo Yi

IPC分类号： H01L21/00 ,  H01L21/30 ,  H01L21/46

CPC分类号： H01L33/007 ,  H01L21/02458

摘要： A method according to embodiments of the invention includes providing a substrate comprising a host and a seed layer bonded to the host. The seed layer comprises a plurality of regions. A semiconductor structure comprising a light emitting layer disposed between an n-type region and a p-type region is grown on the substrate. A top surface of a semiconductor layer grown on the seed layer has a lateral extent greater than each of the plurality of seed layer regions.

摘要翻译： 根据本发明的实施方案的方法包括提供包含与宿主结合的宿主和种子层的底物。 种子层包括多个区域。 在衬底上生长包括设置在n型区域和p型区域之间的发光层的半导体结构。 在种子层上生长的半导体层的顶表面的横向范围大于多个种子层区域中的每一个。

公开(公告)号：US20110027975A1

公开(公告)日：2011-02-03

申请号：US12887853

申请日：2010-09-22

申请人： Michael R. Krames ,  Nathan F. Gardner ,  John E. Epler

发明人： Michael R. Krames ,  Nathan F. Gardner ,  John E. Epler

IPC分类号： H01L21/20

CPC分类号： H01L21/76256 ,  C30B25/183 ,  C30B29/40 ,  C30B29/403 ,  H01L21/76254 ,  H01L33/007 ,  H01L33/0079

摘要： A substrate including a host and a seed layer bonded to the host is provided, then a semiconductor structure including a light emitting layer disposed between an n-type region and a p-type region is grown on the seed layer. In some embodiments, a bonding layer bonds the host to the seed layer. The seed layer may be thinner than a critical thickness for relaxation of strain in the semiconductor structure, such that strain in the semiconductor structure is relieved by dislocations formed in the seed layer, or by gliding between the seed layer and the bonding layer an interface between the two layers. In some embodiments, the host may be separated from the semiconductor structure and seed layer by etching away the bonding layer.

摘要翻译： 提供了包括与主体结合的主体和种子层的基板，然后在种子层上生长包括设置在n型区域和p型区域之间的发光层的半导体结构。 在一些实施方案中，结合层将主体结合到种子层。 种子层可以比用于缓和半导体结构中的应变的临界厚度薄，使得半导体结构中的应变由种子层中形成的位错或通过在种子层和结合层之间滑动而消除， 两层。 在一些实施例中，可以通过蚀刻掉粘合层来将主体与半导体结构和种子层分离。