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    Halide dopant process for producing semi-insulating group III-V regions for semiconductor devices
    1.
    发明授权
    Halide dopant process for producing semi-insulating group III-V regions for semiconductor devices 失效
    用于半导体器件制造半绝缘组III-V区的卤化物掺杂剂工艺

    公开(公告)号：US5656538A

    公开(公告)日：1997-08-12

    申请号：US410782

    申请日：1995-03-24

    申请人： Nathan F. Gardner ,  Stephen A. Stockman ,  Quesnell J. Hartmann ,  Gregory E. Stillman

    发明人： Nathan F. Gardner ,  Stephen A. Stockman ,  Quesnell J. Hartmann ,  Gregory E. Stillman

    IPC分类号： H01L21/205 ,  H01L21/20

    CPC分类号： H01L21/02392 ,  H01L21/02461 ,  H01L21/02543 ,  H01L21/02573 ,  H01L21/0262 ,  Y10S148/003 ,  Y10S148/064 ,  Y10S438/918

    摘要： A process for growing semi-insulating layers of indium phosphide and other group III-V materials through the use of halide dopant or etchant introduction during growth. Gas phase epitaxial growth techniques are utilized at low temperatures to produce indium phosphide layers having a resistivity greater than approximately 10.sup.7 ohm-cm. According to the preferred embodiment carbon tetrachloride is used as a dopant at flow rates above 5 sccm to grow the layers with substrate growth temperatures ranging from approximately 460.degree. C. to 525.degree. C. This temperature range provides an advantage over the transition metal techniques for doping indium phosphide since the high temperatures generally required for those techniques limit the ability to control growth. Good surface morphology is also obtained through the growth according to the present invention. The process may be used to form many types of group III-V semiconductor devices.

    摘要翻译： 在生长期间通过使用卤素掺杂剂或蚀刻剂引入生长磷化铟和其它III-V族材料的半绝缘层的方法。 在低温下使用气相外延生长技术产生电阻率大于约107欧姆 - 厘米的磷化铟层。 根据优选的实施方案，四氯化碳以5sccm以上的流速用作掺杂剂，以生长基底生长温度为约460℃至525℃的层。该温度范围优于过渡金属技术 掺杂磷化铟，因为这些技术通常需要的高温限制了控制生长的能力。 通过根据本发明的生长也可获得良好的表面形态。 该方法可用于形成许多类型的III-V族III族半导体器件。

    III-nitride light-emitting devices with improved high-current efficiency
    2.
    发明授权
    III-nitride light-emitting devices with improved high-current efficiency 有权
    具有改善的高电流效率的III族氮化物发光器件

    公开(公告)号：US06943381B2

    公开(公告)日：2005-09-13

    申请号：US10769590

    申请日：2004-01-30

    申请人： Nathan F. Gardner ,  Christopher P. Kocot ,  Stephen A. Stockman

    发明人： Nathan F. Gardner ,  Christopher P. Kocot ,  Stephen A. Stockman

    IPC分类号： H01L33/00 ,  H01L33/32

    CPC分类号： H01L33/32

    摘要： A light-emitting semiconductor device comprises a III-Nitride active region and a III-Nitride layer formed proximate to the active region and having a thickness that exceeds a critical thickness for relaxation of strain in the III-Nitride layer. The III-Nitride layer may be a carrier confinement layer, for example. In another aspect of the invention, a light-emitting semiconductor device comprises a III-Nitride light emitting layer, an InxAlyGa1-x-yN (0≦x≦1, 0≦y≦1, x+y≦1), and a spacer layer interposing the light emitting layer and the InxAlyGa1-x-yN layer. The spacer layer may advantageously space the InxAlyGa1-x-yN layer and any contaminants therein apart from the light emitting layer. The composition of the III-Nitride layer may be advantageously selected to determine a strength of an electric field in the III-Nitride layer and thereby increase the efficiency with which the device emits light.

    摘要翻译： 发光半导体器件包括在有源区附近形成的III-氮化物有源区和III-氮化物层，其厚度超过III-氮化物层中的应变松弛的临界厚度。 例如，III-氮化物层可以是载流子限制层。 在本发明的另一方面中，一种发光半导体器件包括III族氮化物发光层，In-Al 2 O 3，Ga 1-xy， SUB> N（0 <= x <= 1,0,0 <= y <= 1，x + y <= 1），以及插入发光层和In < 1＆lt; 1＆gt; Ga 1-xy N层。 间隔层可以有利地将In和/或Al 2 Y 1 Ga 1-x-y N N层及其中的任何污染物与发光层隔开。 可以有利地选择III-氮化物层的组成以确定III-氮化物层中的电场的强度，从而提高器件发光的效率。

    lll-phosphide light emitting devices with thin active layers
    5.
    发明授权
    lll-phosphide light emitting devices with thin active layers 有权
    具有薄活性层的磷化铟发光器件

    公开(公告)号：US07087941B2

    公开(公告)日：2006-08-08

    申请号：US10011521

    申请日：2001-11-05

    申请人： Nathan F. Gardner ,  Fred A. Kish ,  Herman C. Chui ,  Stephen A. Stockman ,  Michael R. Krames ,  Gloria E. Hofler ,  Christopher Kocot ,  Nicolas J. Moll ,  Tun-Sein Tan

    发明人： Nathan F. Gardner ,  Fred A. Kish ,  Herman C. Chui ,  Stephen A. Stockman ,  Michael R. Krames ,  Gloria E. Hofler ,  Christopher Kocot ,  Nicolas J. Moll ,  Tun-Sein Tan

    IPC分类号： H01L31/72

    CPC分类号： H01L33/30 ,  H01L33/02 ,  H01L33/305

    摘要： The extraction efficiency of a light emitting device can be improved by making the absorbing device layers as thin as possible. The internal quantum efficiency decreases as the device layers become thinner. An optimal active layer thickness balances both effects. An AlGaInP LED includes a substrate and device layers including an AlGaInP lower confining layer of a first conductivity type, an AlGaInP active region of a second conductivity type, and an AlGaInP upper confining layer of a second conductivity type. The absorbance of the active region is at least one fifth of the total absorbance in the light-emitting device. The device optionally includes at least one set-back layers of AlGaInP interposing one of confining layer and active region. The p-type upper confining layer may be doped with oxygen improve the reliability.

    摘要翻译： 通过使吸收装置层尽可能薄，可以提高发光装置的提取效率。 内部量子效率随着器件层变薄而减小。 最佳活性层厚度平衡两种效果。 AlGaInP LED包括基板和包括第一导电类型的AlGaInP下约束层，第二导电类型的AlGaInP有源区和第二导电类型的AlGaInP上约束层的器件层。 有源区的吸光度是发光器件中总吸光度的至少五分之一。 该装置可选地包括至少一个插入限制层和活性区域中的一个AlGaInP的后置层。 可以用氧掺杂p型上约束层提高可靠性。

    Substrate for growing a III-V light emitting device
    8.
    发明授权
    Substrate for growing a III-V light emitting device 有权
    用于生长III-V发光器件的衬底

    公开(公告)号：US08334155B2

    公开(公告)日：2012-12-18

    申请号：US11237164

    申请日：2005-09-27

    申请人： Michael R. Krames ,  Nathan F. Gardner ,  John E. Epler

    发明人： Michael R. Krames ,  Nathan F. Gardner ,  John E. Epler

    IPC分类号： H01L21/00 ,  H01L21/20 ,  H01L21/36

    CPC分类号： H01L21/76256 ,  C30B25/183 ,  C30B29/40 ,  C30B29/403 ,  H01L21/76254 ,  H01L33/007 ,  H01L33/0079

    摘要： A substrate including a host and a seed layer bonded to the host is provided, then a semiconductor structure including a light emitting layer disposed between an n-type region and a p-type region is grown on the seed layer. In some embodiments, a bonding layer bonds the host to the seed layer. The seed layer may be thinner than a critical thickness for relaxation of strain in the semiconductor structure, such that strain in the semiconductor structure is relieved by dislocations formed in the seed layer, or by gliding between the seed layer and the bonding layer an interface between the two layers. In some embodiments, the host may be separated from the semiconductor structure and seed layer by etching away the bonding layer.

    摘要翻译： 提供了包括与主体结合的主体和种子层的基板，然后在种子层上生长包括设置在n型区域和p型区域之间的发光层的半导体结构。 在一些实施方案中，结合层将主体结合到种子层。 种子层可以比用于缓和半导体结构中的应变的临界厚度薄，使得半导体结构中的应变由种子层中形成的位错或通过在种子层和结合层之间滑动而消除， 两层。 在一些实施例中，可以通过蚀刻掉粘合层来将主体与半导体结构和种子层分离。

    RELAXATION OF STRAINED LAYERS
    9.
    发明申请
    RELAXATION OF STRAINED LAYERS 有权
    应变层的松弛

    公开(公告)号：US20120214291A1

    公开(公告)日：2012-08-23

    申请号：US13458587

    申请日：2012-04-27

    申请人： Fabrice Letertre ,  Carlos Mazure ,  Michael R. Krames ,  Melvin B. McLaurin ,  Nathan F. Gardner

    发明人： Fabrice Letertre ,  Carlos Mazure ,  Michael R. Krames ,  Melvin B. McLaurin ,  Nathan F. Gardner

    IPC分类号： H01L21/762

    CPC分类号： H01L21/2007 ,  H01L21/02422 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02658 ,  H01L21/3245 ,  H01L33/0095

    摘要： A method for relaxing a layer of a strained material. The method includes depositing a first low-viscosity layer on a first face of a strained material layer; bonding a first substrate to the first low-viscosity layer to form a first composite structure; subjecting the composite structure to heat treatment sufficient to cause reflow of the first low-viscosity layer so as to at least partly relax the strained material layer; and applying a mechanical pressure to a second face of the strained material layer wherein the second face is opposite to the first face and with the mechanical pressure applied perpendicularly to the strained material layer during at least part of the heat treatment to relax the strained material.

    摘要翻译： 一种放松应变材料层的方法。 该方法包括在应变材料层的第一面上沉积第一低粘度层; 将第一衬底粘合到第一低粘度层以形成第一复合结构; 对所述复合结构进行热处理以使所述第一低粘度层的回流至少部分地松弛所述应变材料层; 以及向所述应变材料层的第二面施加机械压力，其中所述第二面与所述第一面相对，并且在至少部分热处理期间垂直于所述应变材料层施加机械压力以松弛所述应变材料。