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31.发明申请METHODS AND SYSTEMS FOR IMPLEMENTING ADAPTIVE FET DRIVE VOLTAGE OPTIMIZATION FOR POWER STAGES OF MULTI-PHASE VOLTAGE REGULATOR CIRCUITS 有权用于实现多相电压调节器电路功率级自适应FET驱动电压优化的方法和系统公开(公告)号：US20150370295A1
公开(公告)日：2015-12-24
申请号：US14470455
申请日：2014-08-27
申请人： Shiguo Luo , Ralph H. Johnson
发明人： Shiguo Luo , Ralph H. Johnson
CPC分类号： H02M1/084 , G06F1/26 , H02M1/08 , H02M3/157 , H02M3/1584
摘要： Methods and systems are disclosed that may be employed to implement adaptive FET drive voltage optimization for voltage regulator (VR) integrated power stages (IPstages) that have different MOSFET RDS(on) characteristics to improve VR efficiency and current-sense accuracy.
摘要翻译： 公开了可用于为具有不同MOSFET RDS（on）特性的电压调节器（VR）集成功率级（IP级））实现自适应FET驱动电压优化以提高VR效率和电流检测精度的方法和系统。
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32.发明授权Asymmetric DBR pairs combined with periodic and modulation doping to maximize conduction and reflectivity, and minimize absorption 有权非对称DBR对与周期性和调制掺杂结合，以最大限度地提高传导和反射率，并使吸收最小化公开(公告)号：US08481350B2
公开(公告)日：2013-07-09
申请号：US13537340
申请日：2012-06-29
申请人： Ralph H. Johnson , James Guenter
发明人： Ralph H. Johnson , James Guenter
IPC分类号： H01L21/00
CPC分类号： H01S5/18361 , H01L33/0045 , H01L33/105 , H01S5/0425 , H01S5/18344 , H01S5/305 , H01S5/3054 , H01S5/3077
摘要： Methods for fabricating an optical device that exhibits improved conduction and reflectivity, and minimized absorption. Steps include forming a plurality of mirror periods designed to reflect an optical field having peaks and nulls. The formation of a portion of the plurality of minor periods includes forming a first layer having a thickness of less than one-quarter wavelength of the optical field; forming a first compositional ramp on the first layer; and forming a second layer on the compositional ramp, the second layer having a different index of refraction than the first layer and having a thickness such that the nulls of the optical field occur within the second layer and not within the compositional ramp, and wherein forming the second layer further comprises heavily doping the second layer at a location of the nulls of the optical field.
摘要翻译： 制造具有改善的导电性和反射性以及最小吸收的光学器件的方法。 步骤包括形成设计成反射具有峰值和零点的光场的多个反射镜周期。 形成多个次周期的一部分包括形成厚度小于光场四分之一波长的第一层; 在第一层上形成第一组合斜面; 并且在所述组成斜面上形成第二层，所述第二层具有与所述第一层不同的折射率，并且具有使得所述光学场的零点发生在所述第二层内而不在所述组成斜面内的厚度，并且其中形成 第二层还包括在光场的零点的位置处重掺杂第二层。
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33.发明申请ASYMMETRIC DBR PAIRS COMBINED WITH PERIODIC AND MODULATION DOPING TO MAXIMIZE CONDUCTION AND REFLECTIVITY, AND MINIMIZE ABSORPTION 有权结合周期性和调制功能的不对称DBR配对以最大限度地提高导电性和反射性，并最小化吸收公开(公告)号：US20120270346A1
公开(公告)日：2012-10-25
申请号：US13537340
申请日：2012-06-29
申请人： Ralph H. Johnson , James Guenter
发明人： Ralph H. Johnson , James Guenter
IPC分类号： H01L33/60
CPC分类号： H01S5/18361 , H01L33/0045 , H01L33/105 , H01S5/0425 , H01S5/18344 , H01S5/305 , H01S5/3054 , H01S5/3077
摘要： Methods for fabricating an optical device that exhibits improved conduction and reflectivity, and minimized absorption. Steps include forming a plurality of mirror periods designed to reflect an optical field having peaks and nulls. The formation of a portion of the plurality of minor periods includes forming a first layer having a thickness of less than one-quarter wavelength of the optical field; forming a first compositional ramp on the first layer; and forming a second layer on the compositional ramp, the second layer having a different index of refraction than the first layer and having a thickness such that the nulls of the optical field occur within the second layer and not within the compositional ramp, and wherein forming the second layer further comprises heavily doping the second layer at a location of the nulls of the optical field.
摘要翻译： 制造具有改善的导电性和反射性以及最小吸收的光学器件的方法。 步骤包括形成设计成反射具有峰值和零点的光场的多个反射镜周期。 形成多个次周期的一部分包括形成厚度小于光场四分之一波长的第一层; 在第一层上形成第一组合斜面; 并且在所述组成斜面上形成第二层，所述第二层具有与所述第一层不同的折射率，并且具有使得所述光学场的零点发生在所述第二层内而不在所述组成斜面内的厚度，并且其中形成 第二层还包括在光场的零点的位置处重掺杂第二层。
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34.发明申请LASERS WITH INGAAS(P) QUANTUM WELLS WITH INDIUM INGAP BARRIER LAYERS WITH REDUCED DECOMPOSITION 有权带有INGAAS（P）量子阱的激光器，具有减少分解的带有阴离子阻挡层的层公开(公告)号：US20120236892A1
公开(公告)日：2012-09-20
申请号：US13423826
申请日：2012-03-19
申请人： Ralph H. Johnson , Jerome K. Wade
发明人： Ralph H. Johnson , Jerome K. Wade
CPC分类号： H01S5/3407 , B82Y20/00 , H01S5/0021 , H01S5/18311 , H01S5/34313 , H01S5/3436 , H01S5/34366 , H01S5/34373
摘要： A method for preparing a VCSEL can use MBE for: growing a first conduction region over a first mirror region; growing an active region over the first conduction region opposite of the first mirror region, including: (a) growing a quantum well barrier having In1-xGaxP(As); (b) growing an transitional layer having one or more of GaP, GaAsP, or GaAs; (c) growing a quantum well layer having In1-zGazAsyP1-y; (d) growing another transitional layer have one or more of GaP, GaAsP, or GaAs; (e) repeating processes (a) through (d) over a plurality of cycles; and (f) growing a quantum well barrier having In1-xGaxP(As); growing a second conduction region over the active region opposite of the first conduction region, wherein: x ranges from 0.77 to 0.50; y ranges from 0.7 to 1; and z ranges from 0.7 to 0.99.
摘要翻译： 准备VCSEL的方法可以使用MBE来：在第一镜像区域上生长第一导电区域; 在与第一反射镜区域相反的第一导电区域上生长有源区，包括：（a）生长具有In1-xGaxP（As）的量子阱势垒; （b）生长具有GaP，GaAsP或GaAs中的一种或多种的过渡层; （c）生长具有In1-zGazAsyP1-y的量子阱层; （d）生长另一个过渡层具有GaP，GaAsP或GaAs中的一种或多种; （e）在多个循环中重复过程（a）至（d）; 和（f）生长具有In1-xGaxP（As）的量子阱屏障; 在与第一导电区域相反的有源区上生长第二导电区域，其中：x为0.77至0.50; y范围从0.7到1; z范围为0.7〜0.99。
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公开(公告)号：US20110306156A1
公开(公告)日：2011-12-15
申请号：US13210306
申请日：2011-08-15
申请人： Ralph H. Johnson , James K. Guenter
发明人： Ralph H. Johnson , James K. Guenter
IPC分类号： H01L21/302
CPC分类号： H01S5/18355 , H01S5/18311 , H01S5/18319 , H01S5/18386
摘要： Methods for manufacturing a polarization pinned vertical cavity surface emitting laser (VCSEL). Steps include growing a lower mirror on a substrate; growing an active region on the lower mirror; growing an upper mirror on the active region; depositing a grating layer on the upper minor; and etching a grating into the grating layer.
摘要翻译： 用于制造偏振锁定垂直腔表面发射激光器（VCSEL）的方法。 步骤包括在基材上生长下反射镜; 在下镜上生长活跃区域; 在活跃地区生长上镜; 在上部小型物体上沉积光栅层; 并将光栅蚀刻到光栅层中。
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公开(公告)号：US08031752B1
公开(公告)日：2011-10-04
申请号：US12340286
申请日：2008-12-19
IPC分类号： H01S5/00
CPC分类号： H01S5/18358 , H01S5/18311 , H01S5/18344 , H01S5/18361 , H01S5/305 , H01S5/3077 , H01S5/3211
摘要： A Vertical Cavity Surface Emitting Laser (VCSEL) is optimized for longer life of the VCSEL by controlling the distance of doped and undoped layers near an active region. In addition, the VCSEL optimized for reduced parasitic lateral current under an oxide of the VCSEL by forming a high Al confinement region and placing the oxide at a null in a standing optical wave. Further, the VCSEL is optimized to reduce resistance.
摘要翻译： 垂直腔表面发射激光器（VCSEL）通过控制有源区域附近的掺杂层和未掺杂层的距离来优化VCSEL的更长寿命。 此外，VCSEL通过形成高Al限制区域并将氧化物置于无效的静态光波中而优化用于在VCSEL的氧化物下降低的寄生横向电流。 此外，VCSEL被优化以降低电阻。
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37.发明授权Light emitting semiconductor device having an electrical confinement barrier near the active region 有权在有源区附近具有电限制屏障的发光半导体器件公开(公告)号：US07920612B2
公开(公告)日：2011-04-05
申请号：US11461353
申请日：2006-07-31
CPC分类号： H01S5/18358 , B82Y20/00 , H01L33/105 , H01S5/18311 , H01S5/3054 , H01S5/3211 , H01S5/3432
摘要： Light emitting semiconductor devices such as VCSELs, SELs, and LEDs are manufactured to have a thin electrical confinement barrier in a confining layer near the active region of the device. The thin confinement barrier comprises a III-V semiconductor material having a high aluminum content (e.g. 80%-100% of the type III material). The aluminum content of the adjacent spacer layer is lower than that of the confinement barrier. In one embodiment the spacer layer has an aluminum content of less than 40% and a direct bandgap. The aluminum profile reduces series resistance and improves the efficiency of the semiconductor device.
摘要翻译： 制造诸如VCSEL，SEL和LED的发光半导体器件在靠近器件的有源区域的约束层中具有薄的电限制屏障。 薄限制屏障包括具有高铝含量（例如III型材料的80％-100％）的III-V半导体材料。 相邻间隔层的铝含量低于限制屏障的铝含量。 在一个实施方案中，间隔层具有小于40％的铝含量和直接的带隙。 铝型材降低了串联电阻并提高了半导体器件的效率。
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38.发明授权Migration enhanced epitaxy fabrication of active regions having quantum wells 有权迁移增强了具有量子阱的有源区的外延生长公开(公告)号：US07847310B2
公开(公告)日：2010-12-07
申请号：US12250405
申请日：2008-10-13
申请人： Ralph H. Johnson
发明人： Ralph H. Johnson
IPC分类号： H01L31/00
CPC分类号： H01L21/02395 , B82Y20/00 , H01L21/02387 , H01L21/02458 , H01L21/02463 , H01L21/02466 , H01L21/02507 , H01L21/0254 , H01L21/02546 , H01L21/02549 , H01L21/02631 , H01L33/007 , H01S5/18308 , H01S5/18311 , H01S5/2063 , H01S5/3201 , H01S5/32358 , H01S5/32366 , H01S5/34 , H01S5/3403 , H01S5/3406 , H01S5/34306 , H01S5/34313 , H01S5/34346 , H01S5/34353 , H01S2302/00 , H01S2304/02
摘要： Semiconductor lasers, such as VCSELs having active regions with flattening layers associated with nitrogen-containing quantum wells are disclosed. MEE (Migration Enhanced Epitaxy) is used to form a flattening layer upon which a quantum well is formed and thereby enhance smoothness of quantum well interfaces and to achieve narrowing of the spectrum of light emitted from nitrogen containing quantum wells. A cap layer is also formed over the quantum well.
摘要翻译： 公开了半导体激光器，例如具有与含氮量子阱相关的扁平层的活性区域的VCSEL。 MEE（迁移增强外延）用于形成平坦化层，在其上形成量子阱，从而增强量子阱界面的平滑度，并实现从含氮量子阱发射的光的光谱变窄。 覆盖层也形成在量子阱上。
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公开(公告)号：US07505501B2
公开(公告)日：2009-03-17
申请号：US11559322
申请日：2006-11-13
IPC分类号： H01S5/00
CPC分类号： G02B6/4208
摘要： An optoelectronic package having passive optical components that are configured to reduce the amount of optical back reflection that reaches an optoelectronic device housed within the optoelectronic package. In one example, the optoelectronic package includes an optoelectronic device, a wave plate, and a linear polarizer. The optoelectronic device is configured to emit an optical signal along an optical path. The wave plate is positioned in the optical path of the optoelectronic device. The linear polarizer is positioned in the optical path of the optoelectronic device between the optoelectronic device and the wave plate.
摘要翻译： 一种具有无源光学部件的光电子封装，其被配置为减少到达光电封装内容纳的光电器件的光学反射反射量。 在一个示例中，光电封装包括光电子器件，波片和线性偏振器。 光电子器件被配置为沿光路发射光信号。 波片位于光电子器件的光路中。 线性偏振器位于光电器件与波片之间的光电器件的光路中。
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40.发明申请MIGRATION ENHANCED EPITAXY FABRICATION OF ACTIVE REGIONS HAVING QUANTUM WELLS 有权具有量子阱的活跃区域的迁移增强外延制造公开(公告)号：US20090034571A1
公开(公告)日：2009-02-05
申请号：US12250405
申请日：2008-10-13
申请人： Ralph H. Johnson
发明人： Ralph H. Johnson
CPC分类号： H01L21/02395 , B82Y20/00 , H01L21/02387 , H01L21/02458 , H01L21/02463 , H01L21/02466 , H01L21/02507 , H01L21/0254 , H01L21/02546 , H01L21/02549 , H01L21/02631 , H01L33/007 , H01S5/18308 , H01S5/18311 , H01S5/2063 , H01S5/3201 , H01S5/32358 , H01S5/32366 , H01S5/34 , H01S5/3403 , H01S5/3406 , H01S5/34306 , H01S5/34313 , H01S5/34346 , H01S5/34353 , H01S2302/00 , H01S2304/02
摘要： Semiconductor lasers, such as VCSELs having active regions with flattening layers associated with nitrogen-containing quantum wells are disclosed. MEE (Migration Enhanced Epitaxy) is used to form a flattening layer upon which a quantum well is formed and thereby enhance smoothness of quantum well interfaces and to achieve narrowing of the spectrum of light emitted from nitrogen containing quantum wells. A cap layer is also formed over the quantum well.
摘要翻译： 公开了半导体激光器，例如具有与含氮量子阱相关的扁平层的活性区域的VCSEL。 MEE（迁移增强外延）用于形成平坦化层，在其上形成量子阱，从而增强量子阱界面的平滑度，并实现从含氮量子阱发射的光的光谱变窄。 覆盖层也形成在量子阱上。
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