公开(公告)号：US07927991B2

公开(公告)日：2011-04-19

申请号：US11839349

申请日：2007-08-15

申请人： Hidekazu Miyairi ,  Yasuhiro Jinbo ,  Eiji Higa ,  Shunpei Yamazaki

发明人： Hidekazu Miyairi ,  Yasuhiro Jinbo ,  Eiji Higa ,  Shunpei Yamazaki

IPC分类号： H01L21/20 ,  H01L21/3205

CPC分类号： H01L27/1288 ,  B23K26/0884 ,  B23K2101/006 ,  G03F1/20 ,  H01L21/3086 ,  H01L21/32139 ,  H01L27/1214 ,  H01L29/42384 ,  H01L29/66765

摘要： In a manufacturing process of a semiconductor device, a manufacturing technique for reducing the number of lithography processes that use a photoresist and simplifying the process is provided, which improves throughput. An etching mask for forming a pattern of a layer to be processed such as a conductive layer or a semiconductor layer is manufactured without using a lithography technique that uses a photoresist. The etching mask is formed of a light absorption layer including a material which absorbs a laser beam. The mask is formed by irradiating the light absorption layer with a laser beam through a photomask and utilizing laser ablation by energy of the laser beam absorbed by the light absorption layer.

摘要翻译： 在半导体器件的制造工艺中，提供了减少使用光致抗蚀剂并简化工艺的光刻工艺的数量的制造技术，这提高了生产率。 在不使用使用光致抗蚀剂的光刻技术的情况下，制造用于形成诸如导电层或半导体层的被处理层的图案的蚀刻掩模。 蚀刻掩模由包括吸收激光束的材料的光吸收层形成。 通过光掩模用激光束照射光吸收层并利用由光吸收层吸收的激光束的能量进行激光烧蚀来形成掩模。

公开(公告)号：US07915099B2

公开(公告)日：2011-03-29

申请号：US11785966

申请日：2007-04-23

申请人： Shunpei Yamazaki ,  Koichiro Tanaka ,  Hidekazu Miyairi

发明人： Shunpei Yamazaki ,  Koichiro Tanaka ,  Hidekazu Miyairi

IPC分类号： H01L21/00 ,  H01L21/84 ,  H01L21/20 ,  H01L21/36

CPC分类号： H01L21/02683 ,  B23K26/082 ,  B23K26/0821 ,  H01L21/02691 ,  H01L21/2026 ,  H01L27/1285

摘要： The speed of the laser scanned by the scanning means such as a galvanometer mirror or a polygon mirror is not constant in the center portion and in the end portion of the scanning width. As a result, the object, for example an amorphous semiconductor film, is irradiated with the excessive energy and therefore there is a risk that the amorphous semiconductor film is peeled. In the present invention, in the case where the laser spot of the energy beam output continuously on the irradiated object is scanned by moving it back and forth with the use of the scanning means or the like, the beam is irradiated to the outside of the element-forming region when the scanning speed of the spot is not the predetermined value, for example when the speed is not constant, and accelerates, decelerates, or is zero, for example in the positions where the scanning direction changes, or where the scanning starts or ends.

摘要翻译： 由扫描装置如电流计镜或多面镜扫描的激光的速度在扫描宽度的中央部分和末端部分中不是恒定的。 结果，物体（例如非晶半导体膜）被过量的能量照射，因此存在非晶半导体膜剥离的风险。 在本发明中，在通过使用扫描装置等来前后移动在被照射物体上连续输出的能量束的激光光斑进行扫描的情况下，将光束照射到 当点的扫描速度不是预定值时，例如当速度不恒定并且例如在扫描方向改变的位置加速，减速或为零时，或者扫描 开始或结束

公开(公告)号：US07812348B2

公开(公告)日：2010-10-12

申请号：US12390954

申请日：2009-02-23

申请人： Koji Dairiki ,  Hidekazu Miyairi ,  Yoshiyuki Kurokawa ,  Shunpei Yamazaki ,  Hiromichi Godo ,  Daisuke Kawae ,  Satoshi Kobayashi

发明人： Koji Dairiki ,  Hidekazu Miyairi ,  Yoshiyuki Kurokawa ,  Shunpei Yamazaki ,  Hiromichi Godo ,  Daisuke Kawae ,  Satoshi Kobayashi

IPC分类号： H01L27/14

CPC分类号： H01L29/78609 ,  H01L29/04 ,  H01L29/41733 ,  H01L29/4908 ,  H01L29/66765 ,  H01L29/78618 ,  H01L29/78669

摘要： A thin-film transistor in which problems with ON-state current and OFF-state current are solved, and a thin-film transistor capable of high-speed operation. The thin-film transistor includes a pair of impurity semiconductor layers in which an impurity element imparting one conductivity type is added to form a source and drain regions, provided with a space therebetween so as to be overlapped with a gate electrode with a gate insulating layer interposed between the gate electrode and the impurity semiconductor layers; a pair of semiconductor layers in which an impurity element which serves as an acceptor is added, overlapped over the gate insulating layers with the gate electrode and the impurity semiconductor layers, and disposed with a space therebetween in a channel length direction; and an amorphous semiconductor layer being in contact with the gate insulating layer and the pair of semiconductor layers and extended between the pair of semiconductor layers.

摘要翻译： 解决了导通状态电流和截止电流的问题的薄膜晶体管，以及能够进行高速运转的薄膜晶体管。 薄膜晶体管包括一对杂质半导体层，其中添加赋予一种导电类型的杂质元素以形成源极和漏极区域，其间具有间隔，以便与具有栅极绝缘层的栅电极重叠 插入在栅电极和杂质半导体层之间; 添加作为受体的杂质元素的一对半导体层，与栅极电极和杂质半导体层重叠在栅极绝缘层上，并且在沟道长度方向上间隔设置; 以及与所述栅绝缘层和所述一对半导体层接触并在所述一对半导体层之间延伸的非晶半导体层。

公开(公告)号：US07811911B2

公开(公告)日：2010-10-12

申请号：US11976379

申请日：2007-10-24

申请人： Akihisa Shimomura ,  Hidekazu Miyairi ,  Yasuhiro Jinbo

发明人： Akihisa Shimomura ,  Hidekazu Miyairi ,  Yasuhiro Jinbo

IPC分类号： H01L21/20

CPC分类号： H01L21/02678 ,  B23K26/0732 ,  B23K26/0738 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/02686 ,  H01L21/268 ,  H01L27/1218 ,  H01L27/1285

摘要： A layer including a semiconductor film is formed over a glass substrate and is heated. A thermal expansion coefficient of the glass substrate is greater than 6×10−7/° C. and less than or equal to 38×10−7/° C. The heated layer including the semiconductor film is irradiated with a pulsed ultraviolet laser beam having a width of less than or equal to 100 μm, a ratio of width to length of 1:500 or more, and a full width at half maximum of the laser beam profile of less than or equal to 50 μm, so that a crystalline semiconductor film is formed. As the layer including the semiconductor film formed over the glass substrate, a layer whose total stress after heating is −500 N/m to +50 N/m, inclusive is formed.

摘要翻译： 在玻璃基板上形成包含半导体膜的层，并加热。 玻璃基板的热膨胀系数大于6×10-7 /℃，小于或等于38×10-7 /℃。包含半导体膜的加热层用脉冲紫外激光束 具有小于或等于100μm的宽度，宽度与长度的比为1:500或更大，激光束轮廓的全宽度小于或等于50μm，使得结晶 形成半导体膜。 作为包含在玻璃基板上形成的半导体膜的层，形成加热后的总应力为-500N / m以上且+ 50N / m以下的层。

公开(公告)号：US20100244034A1

公开(公告)日：2010-09-30

申请号：US12726040

申请日：2010-03-17

申请人： Hidekazu Miyairi

发明人： Hidekazu Miyairi

IPC分类号： H01L33/16 ,  H01L29/786

CPC分类号： H01L21/67207 ,  H01L27/12 ,  H01L29/04 ,  H01L29/78618 ,  H01L29/78696

摘要： A thin film transistor includes a gate electrode; a gate insulating layer which is provided to cover the gate electrode; a semiconductor layer which is provided over the gate insulating layer to overlap with the gate electrode; an impurity semiconductor layer which is partly provided over the semiconductor layer and which forms a source region and a drain region; and a wiring layer which is provided over the impurity semiconductor layer, where a width of the source region and the drain region is narrower than a width of the semiconductor layer, and where the width of the semiconductor layer is increased at least in a portion between the source region and the drain region.

摘要翻译： 薄膜晶体管包括栅电极; 栅极绝缘层，被设置为覆盖栅电极; 半导体层，设置在所述栅极绝缘层上以与所述栅电极重叠; 部分地设置在半导体层上并形成源极区域和漏极区域的杂质半导体层; 以及布置层，其设置在所述杂质半导体层上，其中所述源极区域和所述漏极区域的宽度比所述半导体层的宽度窄，并且其中所述半导体层的宽度至少部分地在 源极区和漏极区。

公开(公告)号：US20100230683A1

公开(公告)日：2010-09-16

申请号：US12788367

申请日：2010-05-27

申请人： Hidekazu Miyairi

发明人： Hidekazu Miyairi

IPC分类号： H01L33/00

CPC分类号： H01L27/1288 ,  H01L21/764 ,  H01L27/1214

摘要： Disclosed is a manufacturing method of a thin film transistor, which enables the formation of a thin film transistor by using only one photomask. The method includes: over a substrate sequentially forming a first insulating film, a first conductive film, a second insulating film, a semiconductor film, an impurity semiconductor film, and a second conductive film; forming a resist mask thereover using a first photomask; performing a first etching to allow the side surface of the layers including an upper portion of the first insulating film, the first conductive film, the second insulating film, the semiconductor film, the impurity semiconductor film, and the second conductive film to be coplanar to a side surface of the resist mask; and performing a second etching to selectively etch the first conductive film to allow the side surface of the first conductive film is located inside the side surface of the layers.

摘要翻译： 公开了一种薄膜晶体管的制造方法，其能够仅使用一个光掩模来形成薄膜晶体管。 该方法包括：顺序地形成第一绝缘膜，第一导电膜，第二绝缘膜，半导体膜，杂质半导体膜和第二导电膜的基板上; 使用第一光掩模在其上形成抗蚀剂掩模; 执行第一蚀刻以允许包括第一绝缘膜，第一导电膜，第二绝缘膜，半导体膜，杂质半导体膜和第二导电膜的上部的层的侧表面共面 抗蚀剂掩模的侧表面; 以及执行第二蚀刻以选择性地蚀刻所述第一导电膜以允许所述第一导电膜的侧表面位于所述层的侧表面内。

公开(公告)号：US07749907B2

公开(公告)日：2010-07-06

申请号：US11841361

申请日：2007-08-20

申请人： Hidekazu Miyairi ,  Koichiro Tanaka ,  Hironobu Shoji ,  Shunpei Yamazaki

发明人： Hidekazu Miyairi ,  Koichiro Tanaka ,  Hironobu Shoji ,  Shunpei Yamazaki

IPC分类号： H01L21/461

CPC分类号： H01L27/1288 ,  H01L21/0337 ,  H01L21/3086 ,  H01L21/32139 ,  H01L27/1214 ,  H01L29/66765 ,  H01L29/78633

摘要： A first layer is formed over a substrate, a light absorbing layer is formed over the first layer, and a layer having a light-transmitting property is formed over the light absorbing layer. The light absorbing layer is selectively irradiated with a laser beam via the layer having a light-transmitting property. When the light absorbing layer absorbs energy of the laser beam, due to emission of gas that is within the light absorbing layer, or sublimation, evaporation, or the like of the light absorbing layer, a part of the light absorbing layer and a part of the layer having a light-transmitting property in contact with the light absorbing layer are removed. By using the remaining part of the layer having a light-transmitting property or the remaining part of the light absorbing layer as a mask and etching the first layer, the first layer can be processed into a desired shape.

摘要翻译： 第一层形成在衬底上，在第一层上形成光吸收层，并且在光吸收层上形成具有透光性的层。 通过具有透光性的层，用激光束选择性地照射光吸收层。 当光吸收层吸收激光束的能量时，由于光吸收层内的气体的发射或者光吸收层的升华，蒸发等，一部分光吸收层和 除去与光吸收层接触的透光性的层。 通过使用具有透光性的层的剩余部分或光吸收层的剩余部分作为掩模，并蚀刻第一层，可以将第一层加工成所需的形状。

公开(公告)号：US20100078071A1

公开(公告)日：2010-04-01

申请号：US12566015

申请日：2009-09-24

申请人： Hidekazu Miyairi ,  Takuya Hirohashi ,  Akihisa Shimomura

发明人： Hidekazu Miyairi ,  Takuya Hirohashi ,  Akihisa Shimomura

IPC分类号： H01L31/0368 ,  H01L31/18

CPC分类号： H01L31/075 ,  H01L31/1824 ,  H01L31/202 ,  Y02E10/545 ,  Y02E10/548 ,  Y02P70/521

摘要： A photoelectric conversion device includes one or more unit cells between a first electrode and a second electrode, in which a semiconductor junction is formed by sequentially stacking: a first impurity semiconductor layer of one conductivity type; an intrinsic non-single-crystal semiconductor layer including an NH group or an NH2 group; and a second impurity semiconductor layer of opposite conductivity type to the first impurity semiconductor layer. In the non-single-crystal semiconductor layer of a unit cell on a light incident side, the nitrogen concentration measured by secondary ion mass spectrometry is 5×1018/cm3 or more and 5×1020/cm3 or less and oxygen and carbon concentrations measured by secondary ion mass spectrometry are less than 5×1018/cm3.

摘要翻译： 光电转换装置包括在第一电极和第二电极之间的一个或多个单位电池，其中通过依次层叠形成半导体结：一种导电类型的第一杂质半导体层; 包含NH基或NH 2基的本征非单晶半导体层; 以及与第一杂质半导体层相反的导电类型的第二杂质半导体层。 在光入射侧的单电池的非单晶半导体层中，通过二次离子质谱法测定的氮浓度为5×1018 / cm 3以上且5×10 20 / cm 3以下，并且测量了氧和碳浓度 通过二次离子质谱分析，小于5×1018 / cm3。

公开(公告)号：US20080138963A1

公开(公告)日：2008-06-12

申请号：US11979587

申请日：2007-11-06

申请人： Shunpei Yamazaki ,  Setsuo Nakajima ,  Hidekazu Miyairi

发明人： Shunpei Yamazaki ,  Setsuo Nakajima ,  Hidekazu Miyairi

IPC分类号： H01L21/322

CPC分类号： H01L21/0237 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02667 ,  H01L21/02672 ,  H01L21/02686 ,  H01L27/12 ,  H01L27/1277 ,  H01L27/1285 ,  H01L27/3244 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78675 ,  H01L2251/5315

摘要： After crystallization of a semiconductor film is performed by irradiating first laser light (energy density of 400 to 500 mJ/cm2) in an atmosphere containing oxygen, an oxide film formed by irradiating the first laser light is removed. It is next performed to irradiate second laser light under an atmosphere that does not contain oxygen (at a higher energy density than that of the first laser light irradiation), thus to increase the flatness of the semiconductor film.

摘要翻译： 通过在含有氧的气氛中照射第一激光（能量密度为400〜500mJ / cm 2）的能量密度进行半导体膜的结晶化后，除去通过照射第一激光而形成的氧化膜 。 接下来，在不含氧的气氛（比第一激光照射的能量密度高的环境）下照射第二激光，从而增加半导体膜的平坦度。

公开(公告)号：US07359412B2

公开(公告)日：2008-04-15

申请号：US10658472

申请日：2003-09-10

申请人： Hidekazu Miyairi ,  Akihisa Shimomura ,  Tamae Takano ,  Masaki Koyama ,  Koichiro Tanaka

发明人： Hidekazu Miyairi ,  Akihisa Shimomura ,  Tamae Takano ,  Masaki Koyama ,  Koichiro Tanaka

IPC分类号： H01S3/13

CPC分类号： H01S3/131 ,  B23K26/702

摘要： It is an object to provide a laser apparatus, a laser irradiating method and a manufacturing method of a semiconductor device that make laser energy more stable. To attain the object, a part of laser beam emitted from an oscillator is sampled to generate an electric signal that contains as data energy fluctuation of a laser beam. The electric signal is subjected to signal processing to calculate the frequency, amplitude, and phase of the energy fluctuation of the laser beam. The transmittance of a light amount adjusting means is controlled in order that the transmittance changes in antiphase to the phase of the energy fluctuation of the laser beam and with an amplitude capable of reducing the amplitude of laser beam emitted from the oscillator, the control being made based on the phase difference between the phase of a signal that is in synchronization with oscillation of laser beam emitted from the oscillator and the phase calculated, on the energy ratio of the sampled laser beam to laser beam emitted from the oscillator, and on the frequency and amplitude calculated. In the light amount adjusting means, energy of the laser beam oscillated from the oscillator energy is adjusted.

摘要翻译： 本发明的目的是提供使激光能更稳定的半导体器件的激光装置，激光照射方法和制造方法。 为了达到该目的，从振荡器发射的激光束的一部分被采样以产生包含作为激光束的数据能量波动的电信号。 对信号进行信号处理，计算激光束的能量波动的频率，振幅和相位。 控制光量调节装置的透射率，以便透射率与激光束的能量波动的相位相反，并且能够减小从振荡器发射的激光束的振幅的振幅，进行控制 基于与从振荡器发射的激光束的振荡同步的信号的相位与计算的相位之间的相位差相对于从采样的激光束到从振荡器发射的激光束的能量比，以及频率 并计算振幅。 在光量调节装置中，调整从振荡器能量振荡的激光束的能量。