摘要:
A method and apparatus for preventing contamination of a substrate or a substrate surface, and particularly relates to prevention of contamination of raw materials, semi-finished products, base materials of products and substrate surface in a high-tech industry such as an in the production of semiconductors and liquid crystals. A gas coming into contact with a base material or substrate is purified by dust removing apparatus and adsorption and/or absorption apparatus so that the concentration of fine particles in the gas is below class 1,000 and a non-methane hydrocarbon concentration is below 0.2 ppm. Thereafter, the base material or the substrate surface is exposed to this gas.
摘要:
An ion beam processing device has a sample holder for fixing a sample on which a section has been formed by irradiation of a specified focused ion beam from a surface side, and gas ion beam irradiation device for irradiating a gas ion beam to a region of the sample fixing using the holder member that contains the section to remove a damage layer on the section. The gas ion beam from the gas ion beam irradiation device irradiates the section from a rear surface side of the sample at a specified incident angle.
摘要:
An airplane fuel supply system includes a wing fuel tank that is formed from a wing tip fuel tank having a wing tip fuel pump; a central fuel tank having a central fuel pump; and a wing root fuel tank having a wing root fuel pump. Fuel movement from the wing tip fuel tank to the central fuel tank is allowed by a flapper valve, and fuel movement from the central fuel tank to the wing root fuel tank is allowed by another flapper valve. When the fuel delivery volume of the wing tip fuel pump is represented by Vt, the fuel delivery volume of the central fuel pump is represented by Vc, the fuel delivery volume of the wing root fuel pump is represented by Vr, and the fuel delivery volume from a collector tank to the engine is represented by Ve, the fuel delivery volumes Vt, Vc, Vr, and Ve are set so as to satisfy the relationships Vr>Ve, Vt+Vc>Ve, and Vc
摘要:
A method and apparatus for preventing contamination of a substrate or a substrate surface, and particularly relates to prevention of contamination of raw materials, semi-finished products, base materials of products and substrate surface in a high-tech industry such as in the production of semiconductors and liquid crystals. A gas coming into contact with a base material or substrate is purified by dust removing apparatus and adsorption and/or absorption apparatus so that the concentration of fine particles in the gas is below class 1,000 and a non-methane hydrocarbon concentration is below 0.2 ppm. Thereafter, the base material or the substrate surface is exposed to this gas.
摘要:
A method for removing particles from a surface of an article, such as a semiconductor wafer in a clean room. The particles are supplied with an electric charge. Subsequently, an ultrasonic wave or a gas stream is applied onto the surface of the article while an electric field is applied for driving away the electrically charged particles from the surface, thereby removing particles having a dimension smaller than 1 micrometer from the surface. The presence of a collecting member allows the removal of resulting, floating particles.
摘要:
An apparatus for removing particles from a surface of an article, such as a semiconductor wafer in a clean room. The particles are supplied with an electric charge. Subsequently, an ultrasonic wave or a gas stream is applied onto the surface of the article while an electric field is applied for driving away the electrically charged particles from the surface, thereby removing particles having a dimension smaller than 1 micrometer from the surface. The presence of a collecting member allows the removal of resulting, floating particles.
摘要:
A sample semiconductor device which is processed and/or observed with the focused liquid metal ion beam can be returned again to the manufacturing process in this invention. The metal ions used in this apparatus are generally Ga ions. Ga ions contaminate a semiconductor device and a semiconductor manufacturing apparatus by auto-doping. An area which is irradiated with a focused liquid metal ion is doped by the metal ions which are subsequently removed by irradiation with a gas ion beam or covered by hard fusing metal.
摘要:
A focussed ion-beam apparatus, to realize the simultaneous observation of both the brighter area and the darker area on the sample, which are generated because of the difference in the generation efficiency of the secondary charged particle due to the ion-beam irradiation. According to the result in the comparison of the output signal from the secondary charged particle detector with the reference voltage, to optimize the signal above as the input signal for the image display. To realize the simultaneous observation of both the brighter area and the darker area of the sample.
摘要:
A photoelectron emitting member and method of electrically charging fine particles with photoelectrons, wherein the member includes a matrix that is at least composed of a material capable of transmitting ultraviolet rays and a material that is provided on the surface of the matrix or in its neighborhood and which emits photoelectrons upon irradiation with ultraviolet rays or sunlight. The member emitting photoelectrons upon irradiation with ultraviolet rays or sunlight is disposed in an electric field from the side opposite to the irradiated side. The member permits efficient utilization of the energy of ultraviolet rays. When sunlight is applied to the member to have it emit photoelectrons, particles can be electrically charged with energy costs being reduced to substantially zero.
摘要:
A composite focused ion beam device has a sample stage for supporting a sample, a first ion beam irradiation system that irradiates a first ion beam for processing the sample, and a second ion beam irradiation system that irradiates a second ion beam for processing or observing the sample. The first ion beam irradiation system has a liquid metal ion source that generates first ions for forming the first ion beam. The second ion beam irradiation system has a gas field ion source that generates second ions for forming the second ion beam. The first ion beam irradiated by the first ion beam irradiation system has a first beam diameter and the second ion beam irradiated by the second ion beam irradiation system has a second beam diameter smaller than the first beam diameter. The first and second ion beam irradiation systems are disposed relative to the sample stage so that axes of the first and second ion beams are orthogonal to a tilt axis of the sample stage.