公开(公告)号：US20050127304A1

公开(公告)日：2005-06-16

申请号：US11004903

申请日：2004-12-07

申请人： Hiroyasu Kaga ,  Yuichi Madokoro ,  Shigeru Izawa ,  Tohru Ishitani ,  Kaoru Umemura

发明人： Hiroyasu Kaga ,  Yuichi Madokoro ,  Shigeru Izawa ,  Tohru Ishitani ,  Kaoru Umemura

IPC分类号： H01J27/26 ,  G21G5/00 ,  H01J27/00 ,  H01J27/02 ,  H01J37/08

CPC分类号： H01J27/02 ,  H01J27/22 ,  H01J37/08 ,  H01J2237/0805

摘要： An emitter of a Ga liquid metal ion source is constituted to include W12 of a base material and Ga9 of an ion source element covering a surface as construction materials. By making back-sputtered particles become elements (W and Ga) of the Ga liquid metal ion sour source, if back-sputtered particles attach to the Ga liquid metal ion source, contamination which may change physical characteristics of Ga9 does not occur. A W aperture is used as a beam limiting (GUN) aperture to place Ga of approx. 25 mg (of melting point of 30° C.) on a surface of a portion included in a beam emission region (Ga store). When emitting ions to the beam limiting (GUN) aperture, Ga in the emission region melts and diffuses on a surface of the beam emission region of the W aperture.

摘要翻译： Ga液体金属离子源的发射极构成为包括基材的W12和覆盖表面的离子源元素的Ga9作为构造材料。 通过使反溅射的颗粒成为Ga液态金属离子源的元素（W和Ga），如果反溅射的颗粒附着到Ga液态金属离子源，则不会发生可能改变Ga9的物理特性的污染物。 使用W光圈作为光束限制（GUN）光圈来放置大约的Ga。 在束发射区域（Ga储存）中包含的部分的表面上25mg（熔点为30℃））。 当将离子发射到光束限制（GUN）孔径时，发射区域中的Ga在W光阑的束发射区域的表面上熔化并扩散。

公开(公告)号：US4983540A

公开(公告)日：1991-01-08

申请号：US273012

申请日：1988-11-18

申请人： Hiroshi Yamaguchi ,  Keiya Saito ,  Fumikazu Itoh ,  Koji Ishida ,  Shinji Sakano ,  Masao Tamura ,  Shoji Shukuri ,  Tohru Ishitani ,  Tsuneo Ichiguchi

发明人： Hiroshi Yamaguchi ,  Keiya Saito ,  Fumikazu Itoh ,  Koji Ishida ,  Shinji Sakano ,  Masao Tamura ,  Shoji Shukuri ,  Tohru Ishitani ,  Tsuneo Ichiguchi

IPC分类号： H01L21/20 ,  G01Q30/16 ,  G01Q60/44 ,  H01J37/08 ,  H01J37/305 ,  H01L21/203 ,  H01L21/205 ,  H01L21/263 ,  H01L21/265 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/31 ,  H01L21/338 ,  H01L21/822 ,  H01L21/8252 ,  H01L29/06 ,  H01L29/15 ,  H01L29/778 ,  H01L29/812

CPC分类号： H01J37/3056 ,  B82Y10/00 ,  H01J37/08 ,  H01L21/2633 ,  H01L21/26546 ,  H01L21/8221 ,  H01L21/8252 ,  H01L29/151 ,  Y10S148/046 ,  Y10S148/051 ,  Y10S148/084 ,  Y10S148/16 ,  Y10S438/962

摘要： An ion beam (113) focused into a diameter of at most 0.1 .mu.m bombards substantially perpendicularly to the superlattice layers of a one-dimensional superlattice structure and is scanned rectilinearly in a direction of the superlattice layers so as to form at least two parallel grooves (108, 109, 110, 111) or at least two parallel impurity-implanted parts (2109) as potential barrier layers, whereby a device of two-dimensional superlattice structure can be manufactured. At least two parallel grooves (114, 115, 116, 117) or impurity-implanted parts are further formed orthogonally to the potential barrier layers of the two-dimensional superlattice structure, whereby a device of three-dimensional superlattice structure can be manufactured. In addition, deposition parts (2403, 2404, 2405) may well be provided by further depositing an insulator into the grooves (108, 109, 110, 111, 114, 115, 116, 117) which are formed by the scanning of the ion beam. Owing to these expedients, the portions of the two-dimensional and three-dimensional superlattice structures can be manufactured with ease and at high precision.

公开(公告)号：US4774414A

公开(公告)日：1988-09-27

申请号：US086093

申请日：1987-08-12

申请人： Kaoru Umemura ,  Tohru Ishitani ,  Toshiyuki Aida ,  Hifumi Tamura

发明人： Kaoru Umemura ,  Tohru Ishitani ,  Toshiyuki Aida ,  Hifumi Tamura

IPC分类号： H01J37/08 ,  H01J1/02 ,  H01J27/26 ,  H01J1/05

CPC分类号： H01J27/26

摘要： This invention relates to a liquid metal ion source which melts a source material and extracts ions. Stable extraction of ions of at least one element selected from among As, P and B for a long period of time can be attained by using as a source material an alloy having a composition represented by the formula L.sub.X R.sub.Y M.sub.A wherein X, Y and A each stands for atomic percentage; L at least one element selected from among Pt, Pd and Ag; R at least one element selected from among As, P and B; M at least one element selected from among Ge, Si and Sb; 5

公开(公告)号：US08530865B2

公开(公告)日：2013-09-10

申请号：US13355104

申请日：2012-01-20

申请人： Hiroyasu Shichi ,  Shinichi Matsubara ,  Takashi Ohshima ,  Satoshi Tomimatsu ,  Tomihiro Hashizume ,  Tohru Ishitani

发明人： Hiroyasu Shichi ,  Shinichi Matsubara ,  Takashi Ohshima ,  Satoshi Tomimatsu ,  Tomihiro Hashizume ,  Tohru Ishitani

IPC分类号： H01J49/26 ,  H01J49/00 ,  H01J37/08

CPC分类号： H01J27/26 ,  H01J37/08 ,  H01J2237/0805 ,  H01J2237/0807 ,  H01J2237/182

摘要： A gas field ion source that can simultaneously increase a conductance during rough vacuuming and reduce an extraction electrode aperture diameter from the viewpoint of the increase of ion current. The gas field ion source has a mechanism to change a conductance in vacuuming a gas molecule ionization chamber. That is, the conductance in vacuuming a gas molecule ionization chamber is changed in accordance with whether or not an ion beam is extracted from the gas molecule ionization chamber. By forming lids as parts of the members constituting the mechanism to change the conductance with a bimetal alloy, the conductance can be changed in accordance with the temperature of the gas molecule ionization chamber, for example the conductance is changed to a relatively small conductance at a relatively low temperature and to a relatively large conductance at a relatively high temperature.

公开(公告)号：US08263943B2

公开(公告)日：2012-09-11

申请号：US13144620

申请日：2010-01-08

申请人： Hiroyasu Shichi ,  Shinichi Matsubara ,  Norihide Saho ,  Noriaki Arai ,  Tohru Ishitani

发明人： Hiroyasu Shichi ,  Shinichi Matsubara ,  Norihide Saho ,  Noriaki Arai ,  Tohru Ishitani

IPC分类号： H01J49/10 ,  H01J37/28

CPC分类号： H01J37/08 ,  H01J27/26 ,  H01J37/15 ,  H01J2237/0216 ,  H01J2237/0807 ,  H01J2237/28

摘要： Provided is an ion beam device provided with a gas electric field ionization ion source which can prevent an emitter tip from vibrating in a non-contact manner. The gas electric field ionization ion source is comprised of an emitter tip (21) for generating ions; an emitter base mount (64) for supporting the emitter tip; an ionizing chamber which has an extraction electrode (24) opposed to the emitter tip and which is configured so as to surround the emitter tip (21); and a gas supply tube (25) for supplying gas to the vicinity of the emitter tip. The emitter base mount and a vacuum container magnetically interact with each other.

摘要翻译： 提供了一种具有气体电离电离离子源的离子束装置，其能够防止发射极尖端以非接触的方式振动。 气体电场离子源由用于产生离子的发射极尖端（21）组成; 发射极底座（64），用于支撑发射器尖端; 电离室具有与发射极尖端相对的引出电极（24），其构造为围绕发射极尖端（21）; 以及用于将气体供给到发射极尖端附近的气体供给管（25）。 发射极基座和真空容器彼此磁性相互作用。

公开(公告)号：US20120119086A1

公开(公告)日：2012-05-17

申请号：US13355104

申请日：2012-01-20

申请人： Hiroyasu Shichi ,  Shinichi Matsubara ,  Takashi Ohshima ,  Satoshi Tomimatsu ,  Tomihiro Hashizume ,  Tohru Ishitani

发明人： Hiroyasu Shichi ,  Shinichi Matsubara ,  Takashi Ohshima ,  Satoshi Tomimatsu ,  Tomihiro Hashizume ,  Tohru Ishitani

IPC分类号： H01J37/26

CPC分类号： H01J27/26 ,  H01J37/08 ,  H01J2237/0805 ,  H01J2237/0807 ,  H01J2237/182

摘要： A gas field ion source that can simultaneously increase a conductance during rough vacuuming and reduce an extraction electrode aperture diameter from the viewpoint of the increase of ion current. The gas field ion source has a mechanism to change a conductance in vacuuming a gas molecule ionization chamber. That is, the conductance in vacuuming a gas molecule ionization chamber is changed in accordance with whether or not an ion beam is extracted from the gas molecule ionization chamber. By forming lids as parts of the members constituting the mechanism to change the conductance with a bimetal alloy, the conductance can be changed in accordance with the temperature of the gas molecule ionization chamber, for example the conductance is changed to a relatively small conductance at a relatively low temperature and to a relatively large conductance at a relatively high temperature.

摘要翻译： 一种气体离子源，其可以在粗吸真空中同时增加电导，并且从离子电流的增加的角度降低提取电极的孔直径。 气体离子源具有改变真空气体分子离子化室中的电导的机理。 也就是说，根据是否从气体分子离子化室抽出离子束，改变对气体分子离子化室进行抽真空的电导。 通过将盖子形成为构成用双金属合金改变电导的机构的部件的部分，可以根据气体分子离子化室的温度来改变电导率，例如，电导率变为相对较小的电导率 相对较低的温度和相对高的温度下的相对较大的电导率。

公开(公告)号：US20090152462A1

公开(公告)日：2009-06-18

申请号：US12314553

申请日：2008-12-12

申请人： Tohru Ishitani ,  Yoichi Ose ,  Hiroyasu Shichi ,  Shinichi Matsubara ,  Tomihiro Hashizume ,  Muneyuki Fukuda

发明人： Tohru Ishitani ,  Yoichi Ose ,  Hiroyasu Shichi ,  Shinichi Matsubara ,  Tomihiro Hashizume ,  Muneyuki Fukuda

IPC分类号： G01N23/00 ,  H01T23/00

CPC分类号： H01J37/285 ,  B82Y15/00 ,  H01J27/024 ,  H01J27/26 ,  H01J37/08 ,  H01J37/09 ,  H01J37/18 ,  H01J37/28 ,  H01J2237/002 ,  H01J2237/0216 ,  H01J2237/024 ,  H01J2237/032 ,  H01J2237/0458 ,  H01J2237/061 ,  H01J2237/0807 ,  H01J2237/0835 ,  H01J2237/1501 ,  H01J2237/188 ,  H01J2237/24514

摘要： It is an object of the present invention to improve the stability of a gas field ionization ion source.A GFIS according to the present invention is characterized in that the aperture diameter of the extraction electrode can be set to any of at least two different values or the distance from the apex of the emitter to the extraction electrode can be set to any of at least two different values. In addition, solid nitrogen is used for cooling. According to the present invention, it is possible to not only let divergently emitted ions go through the aperture of the extraction electrode but also, in behalf of differential pumping, reduce the diameter of the aperture. In addition, it is possible to reduce the physical vibration of the cooling means. Consequently, it is possible to provide a highly stable GFIS and a scanning charged particle microscope equipped with such a GFIS.

摘要翻译： 本发明的目的是提高气田电离离子源的稳定性。 根据本发明的GFIS的特征在于，可以将引出电极的孔径设置为至少两个不同的值中的任一个，或者可以将发射极顶端到提取电极的距离设置为至少 两个不同的值。 此外，固体氮用于冷却。 根据本发明，不仅允许发散的离子通过提取电极的孔径，而且代表差分泵送也可以减小孔径。 此外，可以减少冷却装置的物理振动。 因此，可以提供具有这种GFIS的高度稳定的GFIS和扫描带电粒子显微镜。

公开(公告)号：US20080191151A1

公开(公告)日：2008-08-14

申请号：US11822386

申请日：2007-07-05

申请人： Hiroyasu Shichi ,  Tohru Ishitani ,  Hidemi Koike ,  Kaoru Umemura ,  Eiichi Seya ,  Mitsuo Tokuda ,  Satoshi Tomimatsu ,  Hideo Kashima ,  Muneyuki Fukuda

发明人： Hiroyasu Shichi ,  Tohru Ishitani ,  Hidemi Koike ,  Kaoru Umemura ,  Eiichi Seya ,  Mitsuo Tokuda ,  Satoshi Tomimatsu ,  Hideo Kashima ,  Muneyuki Fukuda

IPC分类号： G21K1/00 ,  H01J37/08

CPC分类号： G01N23/20 ,  B23K15/0006 ,  B23K15/0013 ,  G01N1/286 ,  H01J2237/3114 ,  H01J2237/31745

摘要： A sample fabricating method of irradiating a sample with a focused ion beam at an incident angle less than 90 degrees with respect to the surface of the sample, eliminating the peripheral area of a micro sample as a target, turning a specimen stage around a line segment perpendicular to the sample surface as a turn axis, irradiating the sample with the focused ion beam while the incident angle on the sample surface is fixed, and separating the micro sample or preparing the micro sample to be separated. A sample fabricating apparatus for forming a sample section in a sample held on a specimen stage by scanning and deflecting an ion beam, wherein an angle between an optical axis of the ion beam and the surface of the specimen stage is fixed and formation of a sample section is controlled by turning the specimen stage.

摘要翻译： 相对于样品表面以小于90度的入射角照射具有聚焦离子束的样品的样品制造方法，消除作为目标的微量样品的周边区域，将样品台围绕线段 垂直于样品表面作为转动轴线，同时在样品表面上的入射角被固定的同时用聚焦离子束照射样品，并分离微量样品或制备待分离的微量样品。 一种样品制造装置，用于通过扫描和偏转离子束来形成保持在样品台上的样品中的样品部分，其中离子束的光轴与样品台的表面之间的角度被固定并形成样品 通过转动样品台来控制切片。

公开(公告)号：US20080023641A1

公开(公告)日：2008-01-31

申请号：US11828714

申请日：2007-07-26

申请人： Koichiro TAKEUCHI ,  Tohru Ishitani

发明人： Koichiro TAKEUCHI ,  Tohru Ishitani

IPC分类号： G21K1/093

CPC分类号： H01J37/3056 ,  H01J37/09 ,  H01J37/1471 ,  H01J2237/31745 ,  H01J2237/31749

摘要： A focused ion beam apparatus enables an ion beam to be focused highly accurately on a sample at the beam spot position of the case of the absence of magnetic field without causing isotope separation of the ion beam on the sample, even when there is a magnetic field on the ion beam optical axis or the magnetic field fluctuates. The focused ion beam apparatus comprises a corrective magnetic field generating unit 10 disposed on the optical axis of the ion beam 3 for correcting the deflection of the ion beam 3 due to an external magnetic field. The corrective magnetic field generating unit 10 includes pole-piece pairs 26A and 26B, each of which having two pole pieces 26a and 26b or 26c and 26d that are adjacent to each other with a gap d. The pole-piece pairs 26A and 26B are disposed opposite to each other with a gap g (>d) across the optical axis of the ion beam 3. Each of the pole pieces 26a to 26d is wound with an internal coil 29, and the pole-piece pairs 26A and 26B are each wound with an external coil 30 in such a manner as to surround the internal coils 29.

摘要翻译： 聚焦离子束装置使得离子束能够在不存在磁场的情况下的光束位置处的样品上高精度地聚焦，而不会导致样品上的离子束同位素分离，即使存在磁场 在离子束光轴上或磁场波动。 聚焦离子束装置包括设置在离子束3的光轴上的校正磁场产生单元10，用于校正由外部磁场引起的离子束3的偏转。 校正磁场产生单元10包括极片对26A和26B，其中每个具有间隙d彼此相邻的两个极片26a和26b或26c和26d。 极片对26A和26B彼此相对地设置有跨越离子束3的光轴的间隙g（> d）。 每个极片26a至26d都缠绕有内部线圈29，并且极靴对26A和26B以包围内部线圈29的方式各自缠绕有外部线圈30。

公开(公告)号：US20070257200A1

公开(公告)日：2007-11-08

申请号：US11730803

申请日：2007-04-04

申请人： Hiroyasu Kaga ,  Yuichi Madokoro ,  Shigeru Izawa ,  Tohru Ishitani ,  Kaoru Umemura

发明人： Hiroyasu Kaga ,  Yuichi Madokoro ,  Shigeru Izawa ,  Tohru Ishitani ,  Kaoru Umemura

IPC分类号： H01J27/02

CPC分类号： H01J27/02 ,  H01J27/22 ,  H01J37/08 ,  H01J2237/0805

摘要： An emitter of a Ga liquid metal ion source is constituted to include W12 of a base material and Ga9 of an ion source element covering a surface as construction materials. By making back-sputtered particles become elements (W and Ga) of the Ga liquid metal ion sour source, if back-sputtered particles attach to the Ga liquid metal ion source, contamination which may change physical characteristics of Ga9 does not occur. A W aperture is used as a beam limiting (GUN) aperture to place Ga of approx. 25 mg (of melting point of 30° C.) on a surface of a portion included in a beam emission region (Ga store). When emitting ions to the beam limiting (GUN) aperture, Ga in the emission region melts and diffuses on a surface of the beam emission region of the W aperture.