公开(公告)号：US06240782B1

公开(公告)日：2001-06-05

申请号：US09247865

申请日：1999-02-11

申请人： Nobuyuki Kato ,  Toshimasa Yamamoto ,  Tsuyoshi Fukada ,  Minekazu Sakai

发明人： Nobuyuki Kato ,  Toshimasa Yamamoto ,  Tsuyoshi Fukada ,  Minekazu Sakai

IPC分类号： G01P15125

CPC分类号： G01P15/125 ,  G01P15/0802 ,  G01P2015/0814

摘要： A semiconductor physical quantity sensor includes a substrate, a beam-structure movable portion and a fixed portion. The beam-structure movable portion is suspended by four anchors formed of polycrystalline films. A rectangular mass is suspended between beams. Movable electrodes project from both sides of the mass. First fixed electrodes and second fixed electrodes are fixedly provided on the surface of the substrate. The substrate has a laminated structure, wherein an oxide film, attaching film, insulating films, conductive film and insulating film are laminated on the substrate. An anchor formed from the conductive film is electrically connected to the attaching film. An electrode pad made of an aluminum film is provided the above the anchor. Because this structure enables the potential of the attaching film to be fixed, parasitic capacitance can be decreased.

摘要翻译： 半导体物理量传感器包括基板，梁结构可动部和固定部。 梁结构可移动部分由由多晶膜形成的四个锚固件悬挂。 梁之间悬挂有矩形质量块。 活动电极从质量两侧投射。 第一固定电极和第二固定电极固定地设置在基板的表面上。 基板具有叠层结构，其中在基板上层压氧化膜，附着膜，绝缘膜，导电膜和绝缘膜。 由导电膜形成的锚固件与连接膜电连接。 在锚上方设置由铝膜制成的电极垫。 由于该结构能够使固定膜的电位固定，所以可以降低寄生电容。

公开(公告)号：US6143584A

公开(公告)日：2000-11-07

申请号：US121893

申请日：1998-07-24

申请人： Tsuyoshi Fukada ,  Masakazu Kanosue ,  Kenichi Ao ,  Minoru Murata ,  Seiichiro Ishio

发明人： Tsuyoshi Fukada ,  Masakazu Kanosue ,  Kenichi Ao ,  Minoru Murata ,  Seiichiro Ishio

IPC分类号： G01P15/12 ,  H01L21/00

CPC分类号： G01P15/123 ,  G01P15/124

摘要： A semiconductor sensor has gauge resistors. The gauge resistors connect with aluminum electrodes through contact holes, and form a bridge circuit. The gauge resistors are formed on each chip area of a semiconductor substrate before dicing the chip areas. Then, the resistances of the gauge resistors or the output of the bridge circuit are measured. Contact positions of the gauge resistors or the size and/or shape of the contact holes are adjusted based on the result of the measurement in order to adjust the offset voltage of the bridge circuit formed on each chip area.

摘要翻译： 半导体传感器具有量规电阻。 量规电阻器通过接触孔与铝电极连接，形成桥接电路。 在切割芯片区域之前，在半导体衬底的每个芯片区域上形成量规电阻器。 然后，测量电阻的电阻或桥接电路的输出。 基于测量结果调整量规电阻器的接触位置或接触孔的尺寸和/或形状，以调整在每个芯片区域上形成的桥接电路的偏移电压。

公开(公告)号：US5654244A

公开(公告)日：1997-08-05

申请号：US427960

申请日：1995-04-26

申请人： Minekazu Sakai ,  Tsuyoshi Fukada ,  Hiroshige Sugito

发明人： Minekazu Sakai ,  Tsuyoshi Fukada ,  Hiroshige Sugito

IPC分类号： G01L1/22 ,  G01L9/00 ,  H01L29/84 ,  H01L21/46

CPC分类号： G01L9/0042

摘要： In the present invention, a first protective layer formed over a diaphragm is prevented from being etched unnecessarily at the time of etching a second protective layer, and the detection accuracy of the diaphragm is improved.In a process for producing a semiconductor pressure sensor, a first protective layer 4, a metal layer 8 and a second protective layer 6 are successively formed by deposition over a diaphragm 1a, and the second protective layer 6 is removed by etching so that the second protective layer 6 is left on a predetermined portion of an electrode 5. Since the metal layer 8 acts as an etching stopper layer at the time of removing the second protective layer 6 by etching, the first protective layer 4 over the diaphragm 1a is prevented from being etched. The metal layer 8 is removed by etching thereafter so that only the first protective layer 4 is formed over the diaphragm 1a.

摘要翻译： 在本发明中，在蚀刻第二保护层时防止在隔膜上形成的第一保护层不必要地被蚀刻，并且提高了隔膜的检测精度。 在制造半导体压力传感器的工艺中，通过在隔膜1a上沉积来连续地形成第一保护层4，金属层8和第二保护层6，并且通过蚀刻去除第二保护层6，使得第二保护层6 保护层6留在电极5的预定部分上。由于金属层8在通过蚀刻去除第二保护层6时用作蚀刻停止层，所以防止隔膜1a上的第一保护层4 被蚀刻 之后通过蚀刻除去金属层8，使得在隔膜1a上仅形成第一保护层4。

公开(公告)号：US5289721A

公开(公告)日：1994-03-01

申请号：US756223

申请日：1991-09-09

申请人： Yukihiko Tanizawa ,  Hiroshi Okada ,  Kazuhisa Ikeda ,  Tsuyoshi Fukada

发明人： Yukihiko Tanizawa ,  Hiroshi Okada ,  Kazuhisa Ikeda ,  Tsuyoshi Fukada

IPC分类号： G01L9/00 ,  G01L7/08 ,  G01L9/06

CPC分类号： G01L9/0042 ,  G01L9/0054 ,  Y10T29/49103

摘要： A semiconductor pressure sensor comprises a silicon substrate having a surface orientation of substantially (110), a diaphragm formed from the substrate, strain gauges disposed on the diaphragm, and a base joined with the substrate. The diaphragm has an octagonal shape whose sides are orthogonal to axis , , and , respectively. This sensor causes substantially no output error and no fluctuation between output characteristics of the strain gauges irrespective of a change in temperature.

摘要翻译： 半导体压力传感器包括具有基本上（110）的表面取向的硅衬底，由衬底形成的隔膜，设置在隔膜上的应变计和与衬底接合的基底。 隔膜具有八边形，其侧面分别与轴线<100>，<110>和<111>正交。 该传感器基本上不产生输出误差，并且不管温度变化如何，都不会产生应变计的输出特性之间的波动。

公开(公告)号：US08028584B2

公开(公告)日：2011-10-04

申请号：US12219785

申请日：2008-07-29

申请人： Kiyoshi Otsuka ,  Yasuaki Makino ,  Tsuyoshi Fukada ,  Inao Toyoda ,  Naoki Kakoiyama

发明人： Kiyoshi Otsuka ,  Yasuaki Makino ,  Tsuyoshi Fukada ,  Inao Toyoda ,  Naoki Kakoiyama

IPC分类号： G01L7/00

CPC分类号： G01L19/0092 ,  G01L19/0069 ,  G01L19/0084 ,  G01L19/141 ,  G01L19/143 ,  H01L24/32 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2924/181 ,  H01L2924/351 ,  Y10T29/49002 ,  H01L2924/00014 ,  H01L2924/00

摘要： A pressure sensor includes: a housing having a pressure introduction port; and a connector case integrated with the housing. The connector case includes: a protruding portion that protrudes in the pressure introduction port along with the introduction direction from one end of the connector case, and has a concavity hollowed in a direction perpendicular to the introduction direction; a sensor chip having a pressure gauge on one surface of the chip in the concavity; a terminal having one end inserted and molded in the connector case; and a bonding wire that electrically connects the sensor chip and the one end of the terminal. The connector case seals a connection portion between the bonding wire and the terminal, a connection portion between the boding wire and the sensor chip, and the bonding wire.

摘要翻译： 压力传感器包括：具有压力引入口的壳体; 以及与壳体一体化的连接器壳体。 连接器壳体包括：突出部，其从连接器壳体的一端沿着引入方向在压力引入口中突出，并且具有沿与引入方向垂直的方向中空的凹部; 传感器芯片，其在所述凹部中在所述芯片的一个表面上具有压力计; 端子，其一端插入并模制在连接器壳体中; 以及将传感器芯片和端子的一端电连接的接合线。 连接器壳体密封接合线和端子之间的连接部分，在编织线和传感器芯片之间的连接部分以及接合线。

公开(公告)号：US20090049921A1

公开(公告)日：2009-02-26

申请号：US12219785

申请日：2008-07-29

申请人： Kiyoshi Otsuka ,  Yasuaki Makino ,  Tsuyoshi Fukada ,  Inao Toyoda ,  Naoki Kakoiyama

发明人： Kiyoshi Otsuka ,  Yasuaki Makino ,  Tsuyoshi Fukada ,  Inao Toyoda ,  Naoki Kakoiyama

IPC分类号： G01L7/00 ,  H01S4/00

CPC分类号： G01L19/0092 ,  G01L19/0069 ,  G01L19/0084 ,  G01L19/141 ,  G01L19/143 ,  H01L24/32 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2924/181 ,  H01L2924/351 ,  Y10T29/49002 ,  H01L2924/00014 ,  H01L2924/00

摘要： A pressure sensor includes: a housing having a pressure introduction port; and a connector case integrated with the housing. The connector case includes: a protruding portion that protrudes in the pressure introduction port along with the introduction direction from one end of the connector case, and has a concavity hollowed in a direction perpendicular to the introduction direction; a sensor chip having a pressure gauge on one surface of the chip in the concavity; a terminal having one end inserted and molded in the connector case; and a bonding wire that electrically connects the sensor chip and the one end of the terminal. The connector case seals a connection portion between the bonding wire and the terminal, a connection portion between the boding wire and the sensor chip, and the bonding wire.

摘要翻译： 压力传感器包括：具有压力引入口的壳体; 以及与壳体一体化的连接器壳体。 连接器壳体包括：突出部，其从连接器壳体的一端沿着引入方向在压力引入口中突出，并且具有在与引入方向垂直的方向上中空的凹部; 传感器芯片，其在所述凹部中在所述芯片的一个表面上具有压力计; 端子，其一端插入并模制在连接器壳体中; 以及将传感器芯片和端子的一端电连接的接合线。 连接器壳体密封接合线和端子之间的连接部分，在编织线和传感器芯片之间的连接部分以及接合线。

公开(公告)号：US06906394B2

公开(公告)日：2005-06-14

申请号：US10448277

申请日：2003-05-30

申请人： Hiroshi Muto ,  Tsuyoshi Fukada ,  Kenichi Ao ,  Minekazu Sakai ,  Yukihiro Takeuchi ,  Kazuhiko Kano ,  Junji Oohara

发明人： Hiroshi Muto ,  Tsuyoshi Fukada ,  Kenichi Ao ,  Minekazu Sakai ,  Yukihiro Takeuchi ,  Kazuhiko Kano ,  Junji Oohara

IPC分类号： G01P15/125 ,  B81B3/00 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/762 ,  H01L29/84 ,  H01L27/01

CPC分类号： B81C1/00936 ,  B81B2203/0136 ,  B81C1/0019 ,  B81C1/00531 ,  B81C2201/0132 ,  G01P2015/0814 ,  H01L21/76232 ,  H01L21/76264 ,  H01L21/76283

摘要： A method of manufacturing a semiconductor device is provided. The device is manufactured with use of an SOI (Silicon On Insulator) substrate having a first silicon layer, an oxide layer, and a second silicon layer laminated in this order. After forming a trench reaching the oxide layer from the second silicon layer, dry etching is performed, thus allowing the oxide layer located at the trench bottom to be charged at first. This charging forces etching ions to impinge upon part of the second silicon layer located laterally to the trench bottom. Such part is removed, forming a movable section. For example, ions to neutralize the electric charges are administered into the trench, so that the electric charges are removed from charged movable electrodes and their charged surrounding regions. Removing the electric charges prevents the movable section to stick to its surrounding portions.

摘要翻译： 提供一种制造半导体器件的方法。 使用具有按顺序层叠的第一硅层，氧化物层和第二硅层的SOI（绝缘体上硅）基板来制造器件。 在形成从第二硅层到达氧化物层的沟槽之后，进行干蚀刻，从而允许首先将位于沟槽底部的氧化物层充电。 该充电迫使蚀刻离子撞击位于沟槽底部横向的第二硅层的一部分。 去除这样的部件，形成可动部分。 例如，中和电荷的离子被施加到沟槽中，使得电荷从带电的可移动电极及其带电的周围区域中去除。 拆卸电荷可防止可动部分粘附到其周围部分。

公开(公告)号：US06429506B1

公开(公告)日：2002-08-06

申请号：US09525514

申请日：2000-03-15

申请人： Tetsuo Fujii ,  Tsuyoshi Fukada ,  Hiroshi Muto ,  Kenichi Ao ,  Shinji Yoshihara ,  Sumitomo Inomata

发明人： Tetsuo Fujii ,  Tsuyoshi Fukada ,  Hiroshi Muto ,  Kenichi Ao ,  Shinji Yoshihara ,  Sumitomo Inomata

IPC分类号： H01L21301

CPC分类号： H01L21/6836 ,  B29C33/0022 ,  B29C2043/023 ,  B81C1/00888 ,  B81C1/00896 ,  B81C2201/053 ,  H01L2221/68327 ,  H01L2224/16 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48095 ,  H01L2224/48465 ,  H01L2224/73265 ,  H01L2924/01057 ,  H01L2924/01068 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/09701 ,  H01L2924/10253 ,  H01L2924/16235 ,  H01L2924/30105 ,  H01L2924/00 ,  H01L2924/00014

摘要： A protective sheet is fixed to a jig, and regions of the protective sheet corresponding to regions where dicing-cut is to be performed are removed to form grooves. Then, a semiconductor wafer is bonded to the protective sheet at an opposite side of the jig, and the jig is detached from the protective sheet and the semiconductor wafer bonded together. After that, the semiconductor wafer is cut into semiconductor chips by dicing along the grooves of the protective sheet. Because the protective sheet is not cut by dicing, no scraps of the protective sheet is produced, thereby preventing contamination to the chips.

摘要翻译： 将保护片固定在夹具上，除去对应于要进行切割的区域的保护片的区域，形成槽。 然后，在夹具的相反侧将半导体晶片接合到保护片，并将夹具与保护片和半导体晶片接合在一起。 之后，通过沿保护片的沟槽切割将半导体晶片切割成半导体芯片。 由于保护片不是通过切割而切割的，所以不会产生保护片的废料，从而防止对芯片的污染。

公开(公告)号：US06423563B2

公开(公告)日：2002-07-23

申请号：US09861535

申请日：2001-05-22

申请人： Tsuyoshi Fukada ,  Minekazu Sakai ,  Minoru Murata ,  Yukihiro Takeuchi ,  Seiki Aoyama

发明人： Tsuyoshi Fukada ,  Minekazu Sakai ,  Minoru Murata ,  Yukihiro Takeuchi ,  Seiki Aoyama

IPC分类号： H01L2984

CPC分类号： B81C1/00936 ,  B81B3/0005 ,  B81B2201/0235 ,  B81B2201/025 ,  B81B2203/0136 ,  B81B2203/033 ,  B81B2203/04 ,  B81C2201/0132 ,  B81C2201/053 ,  B81C2201/112 ,  G01P15/0802 ,  G01P15/125 ,  G01P2015/0814 ,  G01P2015/084

摘要： A semiconductor dynamic quantity sensor includes a semiconductor support substrate having a specific resistance equal to or less than 3&OHgr; cm. An insulation film is provided on the support substrate and a semiconductor layer is provided on the support substrate with the insulation film interposed therebetween. The semiconductor layer has a specific resistance equal to or less than 3&OHgr; cm. A movable electrode is provided in the semiconductor layer to be displaced according to a dynamic quantity acting thereto. A fixed electrode is fixedly provided in the semiconductor layer to make a specific gap with the movable electrode and to from a capacitor with the movable electrode. The capacitor has a capacity that changes in response to displacement of the movable electrode to detect the dynamic quantity.

摘要翻译： 半导体动态量传感器包括具有等于或小于3OMEGA cm的电阻率的半导体支撑衬底。 绝缘膜设置在支撑基板上，半导体层设置在支撑基板上，绝缘膜位于支撑基板之间。 半导体层的电阻率等于或小于3OMEGA cm。 可移动电极设置在半导体层中，以根据作用于其的动态量而移位。 在半导体层中固定设置固定电极，与可动电极和可动电极的电容器形成特定的间隙。 电容器具有响应于可动电极的位移而变化以检测动态量的容量。

公开(公告)号：US06287885B1

公开(公告)日：2001-09-11

申请号：US09306381

申请日：1999-05-06

申请人： Hiroshi Muto ,  Tsuyoshi Fukada ,  Masakazu Terada ,  Hiroshige Sugito ,  Masakazu Kanosue ,  Shinji Yoshihara ,  Shoji Ozoe ,  Seiji Fujino ,  Minekazu Sakai ,  Minoru Murata ,  Yukihiro Takeuchi ,  Seiki Aoyama ,  Toshio Yamamoto ,  Kazushi Asami

发明人： Hiroshi Muto ,  Tsuyoshi Fukada ,  Masakazu Terada ,  Hiroshige Sugito ,  Masakazu Kanosue ,  Shinji Yoshihara ,  Shoji Ozoe ,  Seiji Fujino ,  Minekazu Sakai ,  Minoru Murata ,  Yukihiro Takeuchi ,  Seiki Aoyama ,  Toshio Yamamoto ,  Kazushi Asami

IPC分类号： H01L21302

CPC分类号： B81C1/00936 ,  B81B3/0005 ,  B81B2201/0235 ,  B81B2201/025 ,  B81B2203/0136 ,  B81B2203/033 ,  B81B2203/04 ,  B81C2201/0132 ,  B81C2201/053 ,  B81C2201/112 ,  G01P15/0802 ,  G01P15/125 ,  G01P2015/0814 ,  G01P2015/084

摘要： In a method for manufacturing a semiconductor acceleration sensor, a movable portion including a mass portion and movable electrodes is formed in a single crystal silicon thin film provided on a silicon wafer through an insulation film by etching both the single crystal silicon thin film and the silicon wafer. In this case, the movable portion is finally defined at a movable portion defining step that is carried out in a vapor phase atmosphere. Accordingly, the movable portion is prevented from sticking to other regions due to etchant during the manufacture thereof.