公开(公告)号：US20170075213A1

公开(公告)日：2017-03-16

申请号：US15341480

申请日：2016-11-02

申请人： DAI NIPPON PRINTING CO., LTD.

发明人： Takaharu NAGAI ,  Hiroshi MOHRI ,  Yasutaka MORIKAWA ,  Katsuya HAYANO

IPC分类号： G03F1/72 ,  G03F1/30 ,  G03F1/32 ,  G03F1/80

CPC分类号： G03F1/72 ,  G03F1/0076 ,  G03F1/0092 ,  G03F1/144 ,  G03F1/28 ,  G03F1/30 ,  G03F1/32 ,  G03F1/36 ,  G03F1/38 ,  G03F1/44 ,  G03F1/80

摘要： The present invention provides a halftone mask comprising an assist pattern and a manufacturing method of the halftone mask, which uses an ArF excimer laser as an exposing source, is used for a projection exposure by an off axis illumination, does not resolve the assist pattern while keeping the focal depth magnification effect as the assist pattern, and may form a transferred image having high contrast of a main pattern. A photomask is a photomask comprising the main pattern which is transferred to a transfer-target surface by the projection exposure and the assist pattern which is formed nearby the main pattern and not transferred, characterized in that the main pattern and the assist pattern are each constituted from a semi-transparent film made of the same material, a retardation of 180° is generated between the light transmitting through the main pattern and the light transmitting through a transparent region of a transparent substrate, and a predetermined retardation within the scope of 70° to 115° is generated between the light transmitting through the assist pattern and the light transmitting through the transparent region of the transparent substrate.

摘要翻译： 本发明提供了一种使用ArF准分子激光器作为曝光源的辅助图形和半色调掩模的制造方法用于通过离轴照明的投影曝光的半色调掩模，不能解决辅助图案，而 保持焦点深度放大效果作为辅助图案，并且可以形成具有主图案的高对比度的转印图像。 光掩模是包含主图案的光掩模，该主图案通过投影曝光被转印到转印目标表面，辅助图案形成在主图案附近而不被转印，其特征在于，主图案和辅助图案各自构成 从由相同材料制成的半透明膜，通过主图案透射的光和透过透明基板的透明区域的光之间产生180°的延迟，在70°的范围内产生预定的延迟 在通过辅助图案透射的光和透过透明基板的透明区域的光之间产生115°。

公开(公告)号：US09529249B2

公开(公告)日：2016-12-27

申请号：US14331974

申请日：2014-07-15

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Chih-Tsung Shih ,  Shinn-Sheng Yu ,  Jeng-Horng Chen ,  Anthony Yen

IPC分类号： G03F1/26 ,  G03F1/24 ,  G03F1/48 ,  G03F1/28 ,  G03F7/20

CPC分类号： G03F1/24 ,  G03F1/28 ,  G03F1/48 ,  G03F7/70283

摘要： A system of an extreme ultraviolet lithography (EUVL) is disclosed. The system includes a mask having reflective phase-shift-grating-blocks (PhSGBs). The system also includes an illumination to expose the mask to produce a resultant reflected light from the mask. The resultant reflected light contains mainly diffracted lights. The system also has projection optics to collect and direct resultant reflected light to expose a target.

摘要翻译： 公开了一种极紫外光刻（EUVL）系统。 该系统包括具有反射相移光栅块（PhSGB）的掩模。 该系统还包括用于暴露掩模以产生从掩模产生的反射光的照明。 所产生的反射光主要包含衍射光。 该系统还具有投影光学器件，用于收集和引导所产生的反射光以暴露目标物。

公开(公告)号：US09470972B2

公开(公告)日：2016-10-18

申请号：US14642660

申请日：2015-03-09

申请人： Samsung Electronics Co., Ltd.

发明人： Jong-Doo Kim ,  Se-Jin Park ,  Suk-Joo Lee

IPC分类号： H01L21/302 ,  G03F1/26 ,  G03F1/28 ,  H01L21/308

CPC分类号： G03F1/26 ,  G03F1/28 ,  G03F1/29 ,  G03F1/30 ,  G03F1/34 ,  H01L21/3086

摘要： A mask for photolithography and methods of manufacturing a mask and a semiconductor device are provided. The method of manufacturing a mask may comprise providing a substrate, forming a phase shift material layer on the substrate, forming a light blocking layer on the phase shift material layer, and forming a main pattern and a sub pattern on the substrate by patterning the phase shift material layer and the light blocking layer. The light blocking layer may be removed on the main pattern left on the light blocking layer remaining on the sub pattern. A semiconductor device may be manufactured using the mask to form a photoresist pattern on a semiconductor wafer. The pattern of the photoresist may be used to etch an object layer of the semiconductor wafer.

摘要翻译： 提供了用于光刻的掩模和制造掩模和半导体器件的方法。 制造掩模的方法可以包括提供衬底，在衬底上形成相移材料层，在相移材料层上形成光阻挡层，以及通过对相位进行图案化来在衬底上形成主图案和子图案 移位材料层和遮光层。 可以在保留在子图案上的遮光层上留下的主图案上去除遮光层。 可以使用掩模制造半导体器件，以在半导体晶片上形成光致抗蚀剂图案。 光致抗蚀剂的图案可以用于蚀刻半导体晶片的物体层。

公开(公告)号：US09390934B2

公开(公告)日：2016-07-12

申请号：US14350314

申请日：2012-09-13

申请人： Kazuyuki Kakuta ,  Toshihiko Onozuka ,  Shigeru Matsui ,  Yoshisada Ebata ,  Norio Hasegawa

发明人： Kazuyuki Kakuta ,  Toshihiko Onozuka ,  Shigeru Matsui ,  Yoshisada Ebata ,  Norio Hasegawa

IPC分类号： G03F1/26 ,  H01L21/3065 ,  G03F1/30 ,  H01L21/308 ,  G03F1/00

CPC分类号： H01L21/3065 ,  G03F1/0046 ,  G03F1/26 ,  G03F1/28 ,  G03F1/30 ,  H01L21/3085

摘要： A technique of forming an asymmetric pattern by using a phase shift mask, and further, techniques of manufacturing a diffraction grating and a semiconductor device, capable of improving accuracy of a product and capable of shortening manufacturing time. In a method of manufacturing a diffraction grating by using a phase shift mask (in which a light shield part and a light transmission part are periodically arranged), light emitted from an illumination light source is transmitted through the phase shift mask, and a photoresist on a surface of a Si wafer is exposed by providing interference between zero diffraction order light and positive first diffraction order light which are generated by the transmission through this phase shift mask onto the surface of the Si wafer, and a diffraction grating which has a blazed cross-sectional shape is formed on the Si wafer.

摘要翻译： 通过使用相移掩模形成非对称图案的技术，以及制造衍射光栅和半导体器件的技术，能够提高产品的精度并能缩短制造时间。 在通过使用相移掩模（其中周期性地布置有遮光部分和透光部分）制造衍射光栅的方法中，从照明光源发射的光透射穿过相移掩模，并且光致抗蚀剂在 通过提供由通过该相移掩模的透射产生的零衍射级光和正的第一衍射级光之间的干涉而暴露于Si晶片的表面到Si晶片的表面上的衍射光栅和具有闪耀十字 在Si晶片上形成截面形状。

公开(公告)号：US20150316841A1

公开(公告)日：2015-11-05

申请号：US14798542

申请日：2015-07-14

申请人： Panasonic Interllectual Property Management Co., Ltd.

发明人： AKIO MISAKA

IPC分类号： G03F1/28

CPC分类号： G03F1/28 ,  G03F1/32 ,  G03F1/70

摘要： A photomask includes a transparent substrate, and a light shield provided to the transparent substrate. The light shield includes a translucent mask pattern opening, and the mask pattern opening includes a plurality of translucent regions which are provided to a periphery of a region corresponding to a desired pattern, and allow exposure light beams to be transmitted at at least three different phases. Each of the plurality of translucent region spaced apart from the region corresponding to the desired pattern, advances more toward an exposure object spaced a predetermined distance apart compared to a phase plane of an exposure light beam transmitted through a translucent region of the plurality of translucent regions, the translucent region close to the region corresponding to the desired pattern, such that the exposure light beams that are transmitted through the mask pattern opening form a projection image of the desired pattern on the exposure object.

摘要翻译： 光掩模包括透明基板和设置在透明基板上的遮光罩。 遮光罩包括半透明掩模图形开口，并且掩模图案开口包括设置在与期望图案对应的区域的周边的多个半透明区域，并允许曝光光束以至少三个不同的相位传播 。 与对应于期望图案的区域间隔开的多个半透明区域中的每一个与透射通过多个半透明区域的半透明区域的曝光光束的相位面相比，更靠近间隔开预定距离的曝光对象 ，靠近与期望图案对应的区域的半透明区域，使得透过掩模图案开口的曝光光束在曝光对象上形成所需图案的投影图像。

公开(公告)号：US20150140480A1

公开(公告)日：2015-05-21

申请号：US14607541

申请日：2015-01-28

申请人： DAI NIPPON PRINTING CO., LTD.

发明人： Takaharu NAGAI ,  Hiroshi MOHRI ,  Yasutaka MORIKAWA ,  Katsuya HAYANO

IPC分类号： G03F1/80 ,  G03F1/38

CPC分类号： G03F1/72 ,  G03F1/0076 ,  G03F1/0092 ,  G03F1/144 ,  G03F1/28 ,  G03F1/30 ,  G03F1/32 ,  G03F1/36 ,  G03F1/38 ,  G03F1/44 ,  G03F1/80

摘要： The present invention provides a halftone mask comprising an assist pattern and a manufacturing method of the halftone mask, which uses an ArF excimer laser as an exposing source, is used for a projection exposure by an off axis illumination, does not resolve the assist pattern while keeping the focal depth magnification effect as the assist pattern, and may form a transferred image having high contrast of a main pattern. A photomask is a photomask comprising the main pattern which is transferred to a transfer-target surface by the projection exposure and the assist pattern which is formed nearby the main pattern and not transferred, characterized in that the main pattern and the assist pattern are each constituted from a semi-transparent film made of the same material, a retardation of 180° is generated between the light transmitting through the main pattern and the light transmitting through a transparent region of a transparent substrate, and a predetermined retardation within the scope of 70° to 115° is generated between the light transmitting through the assist pattern and the light transmitting through the transparent region of the transparent substrate.

摘要翻译： 本发明提供了一种使用ArF准分子激光器作为曝光源的辅助图形和半色调掩模的制造方法用于通过离轴照明的投影曝光的半色调掩模，不能解决辅助图案，而 保持焦点深度放大效果作为辅助图案，并且可以形成具有主图案的高对比度的转印图像。 光掩模是包含主图案的光掩模，该主图案通过投影曝光被转印到转印目标表面，辅助图案形成在主图案附近而不被转印，其特征在于，主图案和辅助图案各自构成 从由相同材料制成的半透明膜，通过主图案透射的光和透过透明基板的透明区域的光之间产生180°的延迟，在70°的范围内产生预定的延迟 在通过辅助图案透射的光和透过透明基板的透明区域的光之间产生115°。

公开(公告)号：US20150138524A1

公开(公告)日：2015-05-21

申请号：US14331974

申请日：2014-07-15

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Chih-Tsung Shih ,  Shinn-Sheng Yu ,  Jeng-Horng Chen ,  Anthony Yen

IPC分类号： G03F1/24 ,  G03F1/48 ,  G03F1/26 ,  G03F7/20

CPC分类号： G03F1/24 ,  G03F1/28 ,  G03F1/48 ,  G03F7/70283

摘要： A system of an extreme ultraviolet lithography (EUVL) is disclosed. The system includes a mask having reflective phase-shift-grating-blocks (PhSGBs). The system also includes an illumination to expose the mask to produce a resultant reflected light from the mask. The resultant reflected light contains mainly diffracted lights. The system also has projection optics to collect and direct resultant reflected light to expose a target.

摘要翻译： 公开了一种极紫外光刻（EUVL）系统。 该系统包括具有反射相移光栅块（PhSGB）的掩模。 该系统还包括用于暴露掩模以产生从掩模产生的反射光的照明。 所产生的反射光主要包含衍射光。 该系统还具有投影光学器件，用于收集和引导所产生的反射光以暴露目标物。

公开(公告)号：US08904316B2

公开(公告)日：2014-12-02

申请号：US13885808

申请日：2011-11-16

申请人： Harun H. Solak ,  Francis Clube

发明人： Harun H. Solak ,  Francis Clube

IPC分类号： G06F17/50 ,  G03F7/20 ,  G03F1/28

CPC分类号： G03F7/70058 ,  G03F1/28 ,  G03F7/70408

摘要： A method for printing a periodic pattern having a first symmetry and a first period into a photosensitive layer. The method includes providing a mask bearing a pattern of at least two overlapping sub-patterns which have a second symmetry and a second period, the features of each sub-pattern being formed in a transmissive material, providing a substrate bearing the layer, arranging the mask with a separation from the substrate, providing light having a central wavelength for illuminating the mask to generate a light-field in which light of the central wavelength forms a range of intensity distributions between Talbot planes, illuminating said mask pattern with said light while maintaining the separation or changing it by a distance whereby the photosensitive layer is exposed to an average of the range of intensity distributions, wherein the light transmitted by each sub-pattern is shifted in phase relative to that transmitted by another sub-pattern.

摘要翻译： 一种用于将具有第一对称性和第一周期的周期性图案印刷到感光层中的方法。 该方法包括提供具有至少两个具有第二对称性和第二周期的重叠子图案的图案的掩模，每个子图案的特征形成在透射材料中，提供承载该层的基底， 掩模，与衬底分离，提供具有用于照亮掩模的中心波长的光以产生光场，其中中心波长的光形成Talbot平面之间的强度分布范围，用所述光照亮所述掩模图案，同时保持 分离或改变一段距离，由此光敏层暴露于强度分布范围的平均值，其中由每个子图案发送的光相对于由另一子图案传输的光相位移位。

公开(公告)号：US20140205937A1

公开(公告)日：2014-07-24

申请号：US14222794

申请日：2014-03-24

申请人： HOYA CORPORATION

发明人： Noriyuki Sakaya ,  Osamu Nozawa

IPC分类号： G03F1/26 ,  G03F7/20

CPC分类号： G03F1/26 ,  B82Y10/00 ,  B82Y30/00 ,  G03F1/28 ,  G03F1/58 ,  G03F7/20

摘要： A mask blank is used for manufacturing a binary mask adapted to be applied with ArF excimer laser exposure light and has a light-shielding film for forming a transfer pattern on a transparent substrate. The light-shielding film has a laminated structure of a lower layer and an upper layer and has an optical density of 2.8 or more for the exposure light. The lower layer is made of a material containing tantalum and nitrogen and has a thickness of 33 nm or more. The upper layer is made of a material containing tantalum and oxygen and has a thickness of 3 nm or more. The phase difference between the exposure light transmitted through the light-shielding film and the exposure light transmitted in air for a distance equal to the thickness of the light-shielding film is 60 degrees or less.

摘要翻译： 掩模坯料用于制造适于施加ArF准分子激光曝光光的二值掩模，并且具有用于在透明基板上形成转印图案的遮光膜。 遮光膜具有下层和上层的层叠结构，并且曝光用光的密度为2.8以上。 下层由含有钽和氮的材料制成，厚度为33nm以上。 上层由含有钽和氧的材料制成，厚度为3nm以上。 透过遮光膜的曝光光与在空气中透射距离等于遮光膜的厚度的曝光光的相位差为60度以下。

公开(公告)号：US08153339B2

公开(公告)日：2012-04-10

申请号：US12823030

申请日：2010-06-24

申请人： Jong-An Kim ,  Ji-Haeng Han ,  Young-Bae Jung ,  Bae-Hyoun Jung

发明人： Jong-An Kim ,  Ji-Haeng Han ,  Young-Bae Jung ,  Bae-Hyoun Jung

IPC分类号： G03F1/00

CPC分类号： H01L27/1288 ,  G03F1/28 ,  G03F1/32 ,  H01L27/1214 ,  H01L27/14689 ,  H01L51/56

摘要： An exposure mask is provided, which includes: a light blocking opaque area blocking incident light; a translucent area; and a transparent area passing the most of incident light, wherein the translucent area generates the phase differences in the range of about −70° to about +70°.

摘要翻译： 提供曝光掩模，其包括：阻挡入射光的遮光不透明区域; 半透明的区域; 以及通过大部分入射光的透明区域，其中半透明区域产生在-70°至约+ 70°范围内的相位差。