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公开(公告)号：US09896328B2
公开(公告)日：2018-02-20
申请号：US15485835
申请日：2017-04-12
发明人： Urs T. Duerig , Armin W. Knoll , Elad Koren , Emanuel Loertscher
CPC分类号： H01H59/0009 , B81B3/0021 , B81B7/008 , B81B2201/01 , B81B2203/04 , H01H1/0036 , H01H1/0094 , H01H55/00 , H01H57/00 , H01H61/01 , H01H2001/0052 , H01H2001/0078 , H01H2057/006 , H01H2061/006 , H01L41/0478 , H01L41/09
摘要： An electromechanical switching device includes a first electrode, comprising layers of a first 2D layered material, which layers exhibit a first surface; a second electrode, comprising layers of a second 2D layered material, which layers exhibit a second surface opposite the first surface; and an actuation mechanism; wherein each of the first and second 2D layered materials has an anisotropic electrical conductivity, which is lower transversely to its layers than in-plane with the layers; the first electrode includes two distinct areas alongside the first surface, which areas differ in at least one structural, electrical and/or magnetic property; and at least one of the first and second electrodes is actuatable by the actuation mechanism, such that actuation thereof for modification of an electrical conductance transverse to each of the first surface and the second surface to enable current modulation between the first electrode and the second electrode.
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公开(公告)号：US09881760B2
公开(公告)日：2018-01-30
申请号：US15433554
申请日：2017-02-15
发明人： Urs T. Duerig , Armin W. Knoll , Elad Koren , Emanuel Loertscher
IPC分类号： H01C10/38 , H01H59/00 , B81B3/00 , H01L41/09 , H01L41/047 , H01H57/00 , H01H61/01 , H01H55/00 , H01H61/00
CPC分类号： H01H59/0009 , B81B3/0021 , B81B7/008 , B81B2201/01 , B81B2203/04 , H01H1/0036 , H01H1/0094 , H01H55/00 , H01H57/00 , H01H61/01 , H01H2001/0052 , H01H2001/0078 , H01H2057/006 , H01H2061/006 , H01L41/0478 , H01L41/09
摘要： An electromechanical switching device includes a first electrode, comprising layers of a first 2D layered material, which layers exhibit a first surface; a second electrode, comprising layers of a second 2D layered material, which layers exhibit a second surface opposite the first surface; and an actuation mechanism; wherein each of the first and second 2D layered materials has an anisotropic electrical conductivity, which is lower transversely to its layers than in-plane with the layers; the first electrode includes two distinct areas alongside the first surface, which areas differ in at least one structural, electrical and/or magnetic property; and at least one of the first and second electrodes is actuatable by the actuation mechanism, such that actuation thereof for modification of an electrical conductance transverse to each of the first surface and the second surface to enable current modulation between the first electrode and the second electrode.
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公开(公告)号：US20170217758A1
公开(公告)日：2017-08-03
申请号：US15485835
申请日：2017-04-12
发明人： Urs T. Duerig , Armin W. Knoll , Elad Koren , Emanuel Loertscher
CPC分类号： H01H59/0009 , B81B3/0021 , B81B7/008 , B81B2201/01 , B81B2203/04 , H01H1/0036 , H01H1/0094 , H01H55/00 , H01H57/00 , H01H61/01 , H01H2001/0052 , H01H2001/0078 , H01H2057/006 , H01H2061/006 , H01L41/0478 , H01L41/09
摘要： An electromechanical switching device includes a first electrode, comprising layers of a first 2D layered material, which layers exhibit a first surface; a second electrode, comprising layers of a second 2D layered material, which layers exhibit a second surface opposite the first surface; and an actuation mechanism; wherein each of the first and second 2D layered materials has an anisotropic electrical conductivity, which is lower transversely to its layers than in-plane with the layers; the first electrode includes two distinct areas alongside the first surface, which areas differ in at least one structural, electrical and/or magnetic property; and at least one of the first and second electrodes is actuatable by the actuation mechanism, such that actuation thereof for modification of an electrical conductance transverse to each of the first surface and the second surface to enable current modulation between the first electrode and the second electrode.
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公开(公告)号：US20170207052A1
公开(公告)日：2017-07-20
申请号：US15477876
申请日：2017-04-03
CPC分类号： H01H49/00 , H01H59/0009 , H01H2001/0052 , H01H2001/0057 , H01H2001/0078 , H01H2061/006 , H01L23/5222 , H01L23/5223 , H01L23/5226 , H01L23/525 , H01L23/53238 , H01L23/53252 , H01L23/53266
摘要： In order, for example, to improve the ohmic contact between two metal pieces located at a metallization level, these two metal pieces are equipped with two offset vias located at the metallization level and at least partially at the via level immediately above. Each offset via comprises, for example, a nonoxidizable or substantially nonoxidizable compound, such as a barrier layer of Ti/TiN.
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公开(公告)号：US09653392B2
公开(公告)日：2017-05-16
申请号：US14920621
申请日：2015-10-22
IPC分类号： H01L23/522 , H01L23/532 , H01H59/00 , H01H1/00 , H01H61/00
CPC分类号： H01H49/00 , H01H59/0009 , H01H2001/0052 , H01H2001/0057 , H01H2001/0078 , H01H2061/006 , H01L23/5222 , H01L23/5223 , H01L23/5226 , H01L23/525 , H01L23/53238 , H01L23/53252 , H01L23/53266
摘要： In order, for example, to improve the ohmic contact between two metal pieces located at a metallization level, these two metal pieces are equipped with two offset vias located at the metallization level and at least partially at the via level immediately above. Each offset via comprises, for example, a nonoxidizable or substantially nonoxidizable compound, such as a barrier layer of Ti/TiN.
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公开(公告)号：US09431201B2
公开(公告)日：2016-08-30
申请号：US14959034
申请日：2015-12-04
发明人： Clark T.-C. Nguyen , Yang Lin
CPC分类号： H01H59/0009 , H01H1/0036 , H01H50/005 , H01H2001/0052 , H02M3/07 , H03H9/2426 , H03H9/2436
摘要： A circuit of N micromechanical resonant switches (resoswitches) is presented, which mimics a Dickson charge pump to amplify an input voltage to an output voltage of N plus 1 times the input voltage, while avoiding the diode voltage drop and breakdown voltage limitations of CMOS-based conventional charge pumps. Important aspects of successful charge pumping are: 1) the long cycle lifetime of resonant micromechanical switches, which has been shown to operate 173.9×1012 cycles, is orders of magnitude higher than non-resonant switches; 2) the use of gated-sinusoid drive excitation to allow a charging period independent of resoswitch resonance frequency; and 3) the use of resonance operation to lower required drive and DC-bias voltages to below the supply voltage. This mechanical charge pump obviates the need for custom high voltage CMOS for applications where large voltages are needed such as MEMS-based timing references, thereby allowing the use of virtually any CMOS process.
摘要翻译： 提出了N个微机械谐振开关（开关）的电路，其模拟了Dickson电荷泵，以将输入电压放大到输入电压为N的1倍输入电压，同时避免了二极管压降和CMOS- 基于常规的电荷泵。 成功电荷泵浦的重要方面是：1）已显示运行173.9×1012个周期的谐振微机械开关的长周期寿命比非谐振开关高数个数量级; 2）使用门槛正弦驱动励磁，使充电周期与开关谐振频率无关; 和3）使用谐振操作将所需驱动和直流偏置电压降低到电源电压以下。 该机械电荷泵避免了对需要大电压的应用（例如基于MEMS的定时参考）的定制高压CMOS的需要，从而允许使用几乎任何CMOS工艺。
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公开(公告)号：US20150035387A1
公开(公告)日：2015-02-05
申请号：US13955866
申请日：2013-07-31
CPC分类号： H01H59/0009 , B81B7/007 , B81B2201/014 , B81B2207/092 , B81C1/00341 , H01H2001/0052 , H01L2224/45144 , H01L2224/48091 , H01L2224/48137 , H01L2224/48247 , H01L2224/49109 , H01L2924/181 , Y10T307/937 , H01L2924/00012 , H01L2924/00014 , H01L2924/00
摘要： A MEMS switch device including: a substrate layer; an insulating layer formed over the substrate layer; and a MEMS switch module having a plurality of contacts formed on the surface of the insulating layer, wherein the insulating layer includes a number of conductive pathways formed within the insulating layer, the conductive pathways being configured to interconnect selected contacts of the MEMS switch module.
摘要翻译： 一种MEMS开关装置，包括：基板层; 形成在所述基板层上的绝缘层; 以及MEMS开关模块，其具有形成在所述绝缘层的表面上的多个触点，其中所述绝缘层包括形成在所述绝缘层内的多个导电路径，所述导电路径被配置为互连所述MEMS开关模块的选定触点。
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公开(公告)号：US20150021149A1
公开(公告)日：2015-01-22
申请号：US14509067
申请日：2014-10-08
发明人： Richard Loon SUN
CPC分类号： H01H1/0036 , H01H1/10 , H01H2001/0052 , H01H2001/0084 , H01H2059/0036
摘要： The present disclosure discloses a contact structure for electromechanical switch. The contact structure is using the design including a PCB and a moving contact to allow the actuations and have great switch characteristics whose range is from DC to high frequency.
摘要翻译： 本公开公开了一种用于机电开关的接触结构。 接触结构使用包括PCB和移动触点的设计，以允许启动并且具有从DC到高频的范围很大的开关特性。
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公开(公告)号：US08826529B2
公开(公告)日：2014-09-09
申请号：US12975090
申请日：2010-12-21
CPC分类号： C25D7/00 , C25D1/003 , C25D3/562 , C25D5/02 , C25D5/022 , C25D5/48 , C25D5/50 , C25D7/123 , H01H1/0036 , H01H59/0009 , H01H2001/0052 , H01H2001/0084 , H01L2924/01079 , H05K13/0486 , H05K2201/0355 , Y10S977/70 , Y10S977/701 , Y10S977/708 , Y10T29/49 , Y10T29/49002 , Y10T29/49117 , Y10T29/49124 , Y10T29/49155
摘要： A device includes a substrate (308) and a metallic layer (336) formed over the substrate (308) with a deposition process for which the metallic layer (336) is characterizable as having a pre-determinable as-deposited defect density. As a result of a fabrication process, the defect density of the metallic layer (336) is reduced relative to the pre-determinable as-deposited defect density of the same layer (336) or another layer having like composition and which is formed under like deposition conditions. In a related method, a substrate (308) is provided and a removable layer (330) is formed over the substrate (308). A metallic layer (336) is formed over the removable layer (330) and is patterned and etched to define a structure over the removable layer (330). The removable layer (330) is removed, and the metallic layer (336) is heated for a time beyond that necessary for bonding of a hermetic sealing cap (340) thereover.
摘要翻译： 一种器件包括通过沉积工艺形成在衬底（308）上方的衬底（308）和金属层（336），金属层（336）可以将金属层（336）表征为具有可预定的沉积缺陷密度。 作为制造工艺的结果，金属层（336）的缺陷密度相对于同一层（336）或具有类似组成的另一层的预先确定的沉积缺陷密度降低，并且形成在类似 沉积条件。 在相关方法中，提供衬底（308），并且在衬底（308）之上形成可移除层（330）。 金属层（336）形成在可移除层（330）上方并被图案化和蚀刻以限定可移除层（330）上的结构。 去除可移除层（330），并且将金属层（336）加热超过其上的气密密封盖（340）的粘合所需的时间。
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公开(公告)号：US08609450B2
公开(公告)日：2013-12-17
申请号：US12961047
申请日：2010-12-06
IPC分类号： H01L21/00
CPC分类号： H01H59/0009 , B81B2201/014 , B81B2203/051 , B81C1/00293 , B81C2203/0145 , H01H2001/0052 , H01H2059/0027
摘要： MEMS switches and methods of fabricating MEMS switches. The switch has a vertically oriented deflection electrode having a conductive layer supported by a supporting layer, at least one drive electrode, and a stationary electrode. An actuation voltage applied to the drive electrode causes the deflection electrode to be deflect laterally and contact the stationary electrode, which closes the switch. The deflection electrode is restored to a vertical position when the actuation voltage is removed, thereby opening the switch. The method of fabricating the MEMS switch includes depositing a conductive layer on mandrels to define vertical electrodes and then releasing the deflection electrode by removing the mandrel and layer end sections.
摘要翻译： MEMS开关和制造MEMS开关的方法。 开关具有垂直取向的偏转电极，其具有由支撑层支撑的导电层，至少一个驱动电极和固定电极。 施加到驱动电极的致动电压使得偏转电极横向偏转并且接触固定电极，该固定电极闭合开关。 当去除致动电压时，偏转电极恢复到垂直位置，从而打开开关。 制造MEMS开关的方法包括在心轴上沉积导电层以限定垂直电极，然后通过去除心轴和层端部来释放偏转电极。
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