公开(公告)号：US20090305507A1

公开(公告)日：2009-12-10

申请号：US12312266

申请日：2007-10-30

Applicant: Akiko Suzuki ,  Akinobu Sato ,  Emmanuel Bourelle ,  Jiro Matsuo ,  Toshio Seki

Inventor： Akiko Suzuki ,  Akinobu Sato ,  Emmanuel Bourelle ,  Jiro Matsuo ,  Toshio Seki

IPC: H01L21/308 ,  H01L21/302

CPC classification number: H01L21/3083 ,  H01J2237/0812 ,  H01L21/3065

Abstract: A solid surface is processed while corner portions of a relief structure are protected from deformation. A method of processing a solid surface with a gas cluster ion beam includes a cluster protection layer formation step of forming, on the solid surface, a relief structure having protrusions with a cluster protection layer formed to cover an upper part thereof and recesses without the cluster protection layer; an irradiation step of emitting a gas cluster ion beam onto the solid surface having the relief structure formed in the cluster protection layer formation step; and a removal step of removing the cluster protection layer. A thickness T of the cluster protection layer satisfies T > nY + ( b 2  Y 2  n - nY 2  ( b 4 - 16  a 2 ) 1 2 2 ) 1 2 , where n is a dose of the gas cluster ion beam, and Y is an etching efficiency of the cluster protection layer, expressed as an etching volume per cluster (a and b are constants).

Abstract translation: 处理浮雕结构的角部以防止变形的实心表面。 用气体簇离子束处理固体表面的方法包括：簇保护层形成步骤，在固体表面上形成具有突起的浮雕结构，所述突起具有形成为覆盖其上部的簇保护层和没有簇的凹部 保护层; 在所述簇保护层形成工序中形成有具有所述浮雕结构的固体表面上的气体簇离子束的照射工序; 以及去除簇保护层的去除步骤。 簇保护层的厚度T满足T> nY +（b 2 y 2 n n n 2（b 4 - 16 a a 2）1 2 2）1 2，其中n是气体簇的剂量 离子束，Y是簇保护层的蚀刻效率，表示为每簇的蚀刻体积（a和b是常数）。

公开(公告)号：US20090233004A1

公开(公告)日：2009-09-17

申请号：US12049583

申请日：2008-03-17

Applicant: Steven Sherman ,  John J. Hautala ,  Noel Russell ,  Martin D. Tabat ,  Thomas G. Tetreault

Inventor： Steven Sherman ,  John J. Hautala ,  Noel Russell ,  Martin D. Tabat ,  Thomas G. Tetreault

IPC: C23C14/14

CPC classification number: C23C14/221 ,  C23C14/0635 ,  C23C16/325 ,  C23C16/452 ,  C23C16/513 ,  H01J37/08 ,  H01J37/3178 ,  H01J2237/0812

Abstract: A method for depositing material on a substrate is described. The method comprises maintaining a reduced-pressure environment around a substrate holder for holding a substrate having a surface, and holding the substrate securely within the reduced-pressure environment. Additionally, the method comprises forming a gas cluster ion beam (GCIB) from a pressurized gas comprising a compound having silicon (Si) and carbon (C), accelerating the GCIB to the reduced-pressure environment, and irradiating the accelerated GCIB onto at least a portion of the surface of the substrate to form a thin film containing silicon and carbon, wherein the carbon content is greater than or equal to about 10%. Further the compound may possess a Si—C bond.

Abstract translation: 描述了在衬底上沉积材料的方法。 该方法包括维持围绕衬底保持器的减压环境，用于保持具有表面的衬底，并且将衬底牢固地保持在减压环境中。 此外，该方法包括从包含具有硅（Si）和碳（C）的化合物的加压气体形成气体簇离子束（GCIB），将GCIB加速至减压环境，并将加速的GCIB至少照射 衬底表面的一部分以形成含有硅和碳的薄膜，其中碳含量大于或等于约10％。 此外，化合物可以具有Si-C键。

公开(公告)号：US07550748B2

公开(公告)日：2009-06-23

申请号：US11694557

申请日：2007-03-30

Applicant: Steve Caliendo ,  Nicholas J. Hofmeester

Inventor： Steve Caliendo ,  Nicholas J. Hofmeester

IPC: G21K5/04 ,  G21K5/10

CPC classification number: H01L22/20 ,  H01J2237/0812 ,  H01J2237/317 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Embodiments of an apparatus and methods for correcting systematic non-uniformities using a gas cluster ion beam are generally described herein. Other embodiments may be described and claimed.

Abstract translation: 本文通常描述使用气体簇离子束校正系统不均匀性的装置和方法的实施例。 可以描述和要求保护其他实施例。

公开(公告)号：US20090098186A1

公开(公告)日：2009-04-16

申请号：US12243285

申请日：2008-10-01

Applicant: Sean R. Kirkpatrick ,  Richard C. Svrluga

Inventor： Sean R. Kirkpatrick ,  Richard C. Svrluga

IPC: A61K9/70 ,  B05D3/00 ,  A61P43/00 ,  C23C16/54

CPC classification number: B05D1/02 ,  A61F2/82 ,  A61F2240/001 ,  B05B5/08 ,  B05D3/0493 ,  B05D3/06 ,  B05D3/107 ,  B05D3/145 ,  H01J37/3053 ,  H01J2237/0812 ,  H01J2237/3151

Abstract: A multi-layer drug coated medical device such as for example an expandable vascular drug eluting stent is formed by vacuum pulse spray techniques wherein each layer is irradiated to improve adhesion and/or drug elution properties prior to formation of subsequent layers. Layers may be homogeneous or of diverse drugs. Layers may incorporate a non-polymer elution-retarding material. Layers may alternate with one or more layers of non-polymer elution-retarding materials. Polymer binders and/or matrices are not used in the formation of the coatings, yet the pure drug coatings have good mechanical and elution rate properties. Systems, methods and medical device articles are disclosed.

Abstract translation: 通过真空脉冲喷雾技术形成多层药物涂覆的医疗装置，例如可扩张血管药物洗脱支架，其中每层照射以在形成后续层之前提高粘附性和/或药物洗脱性质。 层可能是同质的或不同的药物。 层可以掺入非聚合物洗脱阻滞材料。 层可以与一层或多层非聚合物洗脱阻滞材料交替。 聚合物粘合剂和/或基质不用于形成涂层，而纯药物涂层具有良好的机械和洗脱速率性能。 公开了系统，方法和医疗装置的物品。

公开(公告)号：US20090084977A1

公开(公告)日：2009-04-02

申请号：US11864302

申请日：2007-09-28

Applicant: Michael E. Mack ,  Yan Shao

Inventor： Michael E. Mack ,  Yan Shao

IPC: H01J49/02

CPC classification number: H01J37/08 ,  H01J37/305 ,  H01J2237/045 ,  H01J2237/061 ,  H01J2237/0812 ,  H01J2237/083

Abstract: A method and device for adjusting a beam property, such as a beam size, a beam shape or a beam divergence angle, in a gas cluster beam prior to ionization of the gas cluster beam is described. A gas cluster ion beam (GCIB) source is provided, comprising a nozzle assembly having a gas source, a stagnation chamber and a nozzle that is configured to introduce under high pressure one or more gases through the nozzle to a vacuum vessel in order to produce a gas cluster beam. Additionally, the GCIB source comprises a gas skimmer positioned downstream from the nozzle assembly that is configured to reduce the number of energetic, smaller particles in the gas cluster beam. Furthermore, the GCIB source comprises a beam adjustment device positioned downstream from the gas skimmer that is configured to adjust at least one beam property of the gas cluster beam, and an ionizer positioned downstream from the beam adjustment device that is configured to ionize the gas cluster beam to produce a GCIB.

Abstract translation: 描述了在气体簇束离子化之前在气体簇束中调整光束特性（诸如光束大小，光束形状或光束发散角）的方法和装置。 提供了一种气体簇离子束（GCIB）源，其包括具有气体源，停滞室和喷嘴的喷嘴组件，其构造成在高压下将一种或多种气体通过喷嘴引入真空容器以产生 气体束束。 另外，GCIB源包括位于喷嘴组件下游的气体分离器，该气体分离器构造成减少气体簇束中能量较小的颗粒的数量。 此外，GCIB源包括位于气体分离器下游的光束调节装置，其配置成调整气体束束的至少一个光束特性，以及位于光束调节装置的下游的离子发生器，该离子发生器配置成电离气体团 光束产生GCIB。

公开(公告)号：US20090084759A1

公开(公告)日：2009-04-02

申请号：US11864461

申请日：2007-09-28

Applicant: Ruairidh MacCRIMMON ,  Nicolaus J. Hofmeester ,  Steven P. Caliendo

Inventor： Ruairidh MacCRIMMON ,  Nicolaus J. Hofmeester ,  Steven P. Caliendo

IPC: C23F1/00

CPC classification number: H01J37/3023 ,  H01J37/304 ,  H01J37/3053 ,  H01J2237/0451 ,  H01J2237/0455 ,  H01J2237/0458 ,  H01J2237/0812 ,  H01J2237/20228 ,  H01J2237/2485 ,  H01J2237/30461 ,  H01J2237/30477 ,  H01J2237/30488

Abstract: A method and system of location specific processing on a substrate is described. The method comprises acquiring metrology data for a substrate, and computing correction data for adjusting a first region of the metrology data on the substrate. Thereafter, a first gas cluster ion beam (GCIB) for treating the high gradient regions is established, and the first GCIB is applied to the substrate according to the correction data. The method further comprises optionally acquiring second metrology data following the applying of the first GCIB, and computing second correction data for adjusting a second region of the metrology data, or the second metrology data, or both on the substrate. Thereafter, a second gas cluster ion beam (GCIB) for treating the second region is established, and the second GCIB is applied to the substrate according to the second correction data.

Abstract translation: 描述了在衬底上的位置特定处理的方法和系统。 该方法包括获取衬底的度量数据，以及计算用于调整衬底上度量数据的第一区域的校正数据。 此后，建立了用于处理高梯度区域的第一气体簇离子束（GCIB），并且根据校正数据将第一GCIB施加到衬底。 该方法还包括可选地在应用第一GCIB之后获取第二计量数据，以及计算第二校正数据，用于调整测量数据的第二区域或第二测量数据，或二者在衬底上。 此后，建立了用于处理第二区域的第二气体簇离子束（GCIB），并且根据第二校正数据将第二GCIB施加到衬底。

公开(公告)号：US07459702B2

公开(公告)日：2008-12-02

申请号：US11259840

申请日：2005-10-26

Applicant: Jayant Neogi ,  Suneeta Neogi

Inventor： Jayant Neogi ,  Suneeta Neogi

IPC: H01J37/30

CPC classification number: B24B9/16 ,  G21K1/093 ,  G21K5/02 ,  H01J37/3053 ,  H01J37/317 ,  H01J2237/0812 ,  H01J2237/3114 ,  H01J2237/3151

Abstract: The invention comprises a two-step process for achieving an ultra-polish finish on materials such as gemstones and the like by first performing a chemical-mechanical polishing of the material using an intermetallic material as the grinding medium followed by a gas cluster ion beam (GCIB) treatment. The intermetallic grinding wheel is formed of carbide-forming metals in the form of intermetallics consisting of one kind or more of elements selected from the group of Al, Cr, Mn, Fe, Co, Ni, Cu, Ru, Rh, Pd, Os, Ir and Pt, and one kind or more of elements selected from the group of Ti, V, Zr, Nb, Mo, Hf, Ta and W. The gas cluster ion beams are comprised of gas clusters having nano-sized aggregates of materials that are gaseous under conditions of standard temperature and pressure. Such clusters can be ionized by electron bombardment or other means, permitting the gas clusters to be formed into directed beams of known and controllable energy. The larger sized gas clusters are the most useful because the larger sized gas clusters are able to carry substantial energy per cluster ion, while yet having only modest energy per atom or molecule.

Abstract translation: 本发明包括通过首先使用金属间化合物作为研磨介质进行化学机械抛光，然后进行气体团簇离子束（例如，通过使用气体聚集体离子束）来实现对诸如宝石等材料的超抛光加工的两步法 GCIB）治疗。 金属间砂轮由选自Al，Cr，Mn，Fe，Co，Ni，Cu，Ru，Rh，Pd，Os中的一种或多种元素组成的金属间化合物形成的碳化物形成金属形成 ，Ir和Pt，以及选自Ti，V，Zr，Nb，Mo，Hf，Ta和W组中的一种或多种元素。气体团簇离子束由具有纳米尺寸的材料聚集体 在标准温度和压力的条件下是气态的。 这样的簇可以通过电子轰击或其他手段离子化，允许气体簇形成已知和可控能量的定向束。 较大尺寸的气体簇是最有用的，因为较大尺寸的气体簇能够在每个簇离子上承载相当大的能量，同时每个原子或分子仅具有适度的能量。

公开(公告)号：US20080237492A1

公开(公告)日：2008-10-02

申请号：US11694572

申请日：2007-03-30

Applicant: Steven Caliendo ,  Nicolaus Hofmeester

Inventor： Steven Caliendo ,  Nicolaus Hofmeester

IPC: G21K5/04

CPC classification number: H01L22/20 ,  H01J2237/0812 ,  H01J2237/317 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Embodiments of an apparatus and methods for offsetting systematic non-uniformities using a gas cluster ion beam are generally described herein. Other embodiments may be described and claimed.

Abstract translation: 本文通常描述使用气体簇离子束抵消系统不均匀性的装置和方法的实施例。 可以描述和要求保护其他实施例。

公开(公告)号：US20080230714A1

公开(公告)日：2008-09-25

申请号：US11689572

申请日：2007-03-22

Applicant: Scott Lane

Inventor： Scott Lane

IPC: H01J27/02

CPC classification number: H01J37/3053 ,  H01J27/026 ,  H01J37/08 ,  H01J37/3171 ,  H01J2237/0812 ,  H01J2237/0825

Abstract: Embodiments of a gas cluster ion beam apparatus and methods for forming a gas cluster ion beam using a low-pressure process source are generally described herein. In one embodiment, the low-pressure process source is mixed with a high-pressure diluent source in a static pump to form a mixed source, from which a gas cluster jet is generated and ionized to form the gas cluster ion beam. Other embodiments may be described and claimed.

Abstract translation: 气体簇离子束装置的实施例和使用低压处理源形成气体簇离子束的方法在本文中一般地被描述。 在一个实施方案中，将低压过程源与静压泵中的高压稀释剂源混合以形成混合源，产生气体簇射流并离子化以形成气体团簇离子束。 可以描述和要求保护其他实施例。

公开(公告)号：US07396745B2

公开(公告)日：2008-07-08

申请号：US11080800

申请日：2005-03-11

Applicant: John O. Borland ,  John J. Hautala ,  Wesley J. Skinner

Inventor： John O. Borland ,  John J. Hautala ,  Wesley J. Skinner

IPC: H01L21/425

CPC classification number: H01L21/223 ,  H01J37/08 ,  H01J37/3171 ,  H01J2237/0812 ,  H01L21/265 ,  H01L21/26513 ,  H01L21/26566 ,  H01L21/324

Abstract: Method of forming one or more doped regions in a semiconductor substrate and semiconductor junctions formed thereby, using gas cluster ion beams.

Abstract translation: 使用气体簇离子束在半导体衬底中形成一个或多个掺杂区域和由此形成的半导体结的方法。