WAFER PLACEMENT TABLE
    31.
    发明公开

    公开(公告)号:US20230343566A1

    公开(公告)日:2023-10-26

    申请号:US18173889

    申请日:2023-02-24

    Abstract: A wafer placement includes an alumina substrate having a wafer placement surface at an upper surface, and incorporating an electrode; a brittle cooling substrate which is bonded to a lower surface of the alumina substrate, and in which a refrigerant flow path is formed; and a ductile connection member stored in a storage hole opened in a lower surface of the cooling substrate in a state of restricted axial rotation and in a state of being engaged with an engagement section of the storage hole, the ductile connection member having a male thread section or a female thread section, wherein the storage hole is provided in the refrigerant flow path.

    Ceramic heater
    32.
    发明授权

    公开(公告)号:US11798792B2

    公开(公告)日:2023-10-24

    申请号:US17177392

    申请日:2021-02-17

    Abstract: A ceramic heater includes a ceramic plate, a planar electrode, and a resistive heating element. A first via, a second via, a coupler, and a reinforcement portion are embedded in the ceramic plate. The first via is conductive and extends from the resistive heating element toward a via through-hole. The second via is conductive and extends from the via through-hole in a direction opposite a direction toward the resistive heating element. The coupler is conductive and electrically couples the first via and the second via with each other. The reinforcement portion is disposed inside the via through-hole 16 between the coupler and an inner circumferential surface around the via through-hole and is composed of a material that is the same as the material of the ceramic plate.

    ELECTROSTATIC CHUCK
    33.
    发明公开
    ELECTROSTATIC CHUCK 审中-公开

    公开(公告)号:US20230317494A1

    公开(公告)日:2023-10-05

    申请号:US18121353

    申请日:2023-03-14

    Applicant: TOTO LTD.

    Abstract: An electrostatic chuck includes a ceramic dielectric substrate, a base plate, and a heater unit. The heater unit includes first and second heater elements. The first heater element includes a first zone. The first heater element includes first and second protruding portions. The first zone includes a first facing region in which the first protruding portion and the second protruding portion are disposed so as to face and be adjacent to each other. The second heater element includes a second zone. The second zone includes a central region and an outer peripheral region. The central region is positioned at a center of the second zone. The outer peripheral region is positioned outside the central region. The first facing region is located at a position where the first facing region overlaps the central region.

    SUBSTRATE PROCESSING APPARATUS
    34.
    发明公开

    公开(公告)号:US20230317436A1

    公开(公告)日:2023-10-05

    申请号:US18192304

    申请日:2023-03-29

    Abstract: The disclosure provides a substrate processing apparatus including an electrostatic chuck disposed on a base to support a substrate, a focus ring disposed on the base to surround an outer circumference of the electrostatic chuck, and a lift pin configured to lift the focus ring, wherein the focus ring includes a lower ring and an upper ring disposed on the lower ring, the upper ring and/or the lower ring are configured to be simultaneously lifted according to a height of the lift pin, the lower ring includes an insertion groove, the upper ring includes a main body unit, a first protrusion extending downward from the main body unit and inserted into the insertion groove of the lower ring, and a second protrusion extending downward from the main body unit, contacting an outer circumference of the lower ring, and directly contacting the lift pin.

    WAFER PLACEMENT TABLE
    35.
    发明公开

    公开(公告)号:US20230317433A1

    公开(公告)日:2023-10-05

    申请号:US18166585

    申请日:2023-02-09

    Abstract: A wafer placement table includes: a ceramic plate having a wafer placement surface on its upper surface and incorporating an electrode; an electrically conductive plate provided on a lower surface side of the ceramic plate; an electrically conductive bonding layer that bonds the ceramic plate with the electrically conductive plate; a gas intermediate passage embedded in the electrically conductive bonding layer or provided at an interface between the electrically conductive bonding layer and the electrically conductive plate; a plurality of gas supply passages extending from the gas intermediate passage through the electrically conductive bonding layer and the ceramic plate to the wafer placement surface; and a gas introduction passage provided so as to extend through the electrically conductive plate and communicate with the gas intermediate passage, the number of the gas introduction passages being smaller than the number of the gas supply passages communicating with the gas intermediate passage.

    WAFER PLACEMENT TABLE
    37.
    发明公开

    公开(公告)号:US20230223245A1

    公开(公告)日:2023-07-13

    申请号:US18056333

    申请日:2022-11-17

    Abstract: A wafer placement table includes a ceramic base, an electrode (FR attraction electrode), a bonding terminal (power supply terminal), and an electrode lead-out portion. The ceramic base has an upper surface serving as a wafer placement surface. The FR attraction electrode is embedded in the ceramic base. The power supply terminal is inserted into the ceramic base from a lower surface of the ceramic base and penetrates a through-hole formed in the FR attraction electrode. The electrode lead-out portion is provided at each of two or more positions at intervals along a peripheral edge of the through-hole to be thicker than the FR attraction electrode and has an inner peripheral surface bonded to a side surface of the power supply terminal.

    PLASMA PROCESSING APPARATUS AND ELECTROSTATIC CHUCK MANUFACTURING METHOD

    公开(公告)号:US20230207285A1

    公开(公告)日:2023-06-29

    申请号:US18088870

    申请日:2022-12-27

    CPC classification number: H01J37/32715 H01J37/32091 H01J2237/2007

    Abstract: There is provided a plasma processing apparatus including: a plasma processing chamber; a substrate support disposed in the plasma processing chamber, the substrate support including: a dielectric member having a substrate supporting surface; a first filter element disposed in the dielectric member, the first filter element having a first terminal and a second terminal; and a first electrode disposed in the dielectric member, the first electrode being electrically connected to the first terminal. The plasma processing apparatus includes an RF generator coupled to the plasma processing chamber and configured to generate an RF signal; and a first DC generator electrically connected to the second terminal and configured to generate a DC signal.

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