公开(公告)号：US09410959B2

公开(公告)日：2016-08-09

申请号：US13594719

申请日：2012-08-24

Applicant: Sungjee Kim ,  Moungi G. Bawendi

Inventor： Sungjee Kim ,  Moungi G. Bawendi

IPC: B32B5/16 ,  G01N33/58 ,  B82Y10/00 ,  B82Y15/00 ,  B82Y20/00 ,  B82Y30/00 ,  C09K11/88 ,  C30B7/00 ,  C30B29/60 ,  C30B33/00 ,  H01L21/02 ,  H01L29/06 ,  H01L29/165 ,  H01L29/205 ,  H01L29/225 ,  H01L29/267 ,  H01L51/42

CPC classification number: G01N33/588 ,  B82Y10/00 ,  B82Y15/00 ,  B82Y20/00 ,  B82Y30/00 ,  C09K11/883 ,  C30B7/00 ,  C30B29/605 ,  C30B33/00 ,  H01L21/0237 ,  H01L21/02409 ,  H01L21/02411 ,  H01L21/02521 ,  H01L21/0256 ,  H01L21/02562 ,  H01L21/02601 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/165 ,  H01L29/205 ,  H01L29/225 ,  H01L29/267 ,  H01L51/426 ,  Y02E10/549 ,  Y10S977/773 ,  Y10S977/774 ,  Y10S977/777 ,  Y10S977/811 ,  Y10T428/12021 ,  Y10T428/12528 ,  Y10T428/12986 ,  Y10T428/294 ,  Y10T428/2991 ,  Y10T428/315

Abstract: A semiconductor nanocrystal heterostructure has a core of a first semiconductor material surrounded by an overcoating of a second semiconductor material. Upon excitation, one carrier can be substantially confined to the core and the other carrier can be substantially confined to the overcoating.

Abstract translation: 半导体纳米晶体异质结构具有由第二半导体材料的外涂层包围的第一半导体材料的芯。 在激发时，一个载体可以基本上限于核心，另一个载体可以基本上局限于外涂层。

公开(公告)号：US20160141444A1

公开(公告)日：2016-05-19

申请号：US15001794

申请日：2016-01-20

Applicant: First Solar, Inc.

Inventor： Long Chen ,  Pawel Mrozek

IPC: H01L31/18 ,  C25D21/02 ,  C25D21/12 ,  C25D17/00

CPC classification number: H01L31/1828 ,  C25D7/12 ,  C25D17/001 ,  C25D21/02 ,  C25D21/12 ,  H01L21/02411 ,  H01L21/0248 ,  H01L21/02505 ,  H01L21/0251 ,  H01L21/02562 ,  H01L21/02579 ,  H01L21/02628

Abstract: A method and apparatus for an amount of Cu or Sb dopant incorporated into a zinc-based layer as the layer is being formed. The layer is formed over a coated substrate using an electrochemical deposition (ECD) process. In the ECD process, the bias voltage and plating solution composition may be systematically changed during the electrochemical deposition process to change the amount of Cu or Sb dopant incorporated into the plated layer.

Abstract translation: 在形成该层时，掺入锌基层中的Cu或Sb掺杂剂的量的方法和装置。 使用电化学沉积（ECD）工艺在涂覆的基底上形成该层。 在ECD工艺中，可以在电化学沉积工艺期间系统地改变偏置电压和电镀溶液组成，以改变掺入镀层中的Cu或Sb掺杂剂的量。

公开(公告)号：US07517720B2

公开(公告)日：2009-04-14

申请号：US11984941

申请日：2007-11-26

Applicant: Tetsuya Yamamoto ,  Atsutoshi Arakawa ,  Kenji Sato ,  Toshiaki Asahi

Inventor： Tetsuya Yamamoto ,  Atsutoshi Arakawa ,  Kenji Sato ,  Toshiaki Asahi

IPC: H01L21/00

CPC classification number: C30B29/48 ,  C30B23/002 ,  C30B25/02 ,  H01L21/02411 ,  H01L21/0248 ,  H01L21/02554 ,  H01L21/0256 ,  H01L21/02562 ,  H01L21/02568 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02623 ,  H01L21/02631 ,  H01L29/227 ,  H01L33/285

Abstract: The present invention relates to a method for producing an n-type ZnTe system compound semiconductor single crystal having high carrier concentration and low resistivity, the ZnTe system compound semiconductor single crystal, and a semiconductor device produced by using the ZnTe system compound semiconductor as a base member. Concretely, a first dopant and a second dopant are co-doped into the ZnTe system compound semiconductor single crystal so that the number of atoms of the second dopant becomes smaller than the number of atoms of the first dopant, the first dopant being for controlling a conductivity type of the ZnTe system compound semiconductor to a first conductivity type, and the second dopant being for controlling the conductivity type to a second conductivity type different from the first conductivity type. By the present invention, a desired carrier concentration can be achieved with a doping amount smaller than in earlier technology, and crystallinity of the obtained crystal can be improved.

公开(公告)号：US07390568B2

公开(公告)日：2008-06-24

申请号：US10638546

申请日：2003-08-12

Applicant: Sungjee Kim ,  Moungi G. Bawendi

Inventor： Sungjee Kim ,  Moungi G. Bawendi

IPC: B32B5/16

CPC classification number: G01N33/588 ,  B82Y10/00 ,  B82Y15/00 ,  B82Y20/00 ,  B82Y30/00 ,  C09K11/883 ,  C30B7/00 ,  C30B29/605 ,  C30B33/00 ,  H01L21/0237 ,  H01L21/02409 ,  H01L21/02411 ,  H01L21/02521 ,  H01L21/0256 ,  H01L21/02562 ,  H01L21/02601 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/165 ,  H01L29/205 ,  H01L29/225 ,  H01L29/267 ,  H01L51/426 ,  Y02E10/549 ,  Y10S977/773 ,  Y10S977/774 ,  Y10S977/777 ,  Y10S977/811 ,  Y10T428/12021 ,  Y10T428/12528 ,  Y10T428/12986 ,  Y10T428/294 ,  Y10T428/2991 ,  Y10T428/315

Abstract: A semiconductor nanocrystal heterostructure has a core of a first semiconductor material surrounded by an overcoating of a second semiconductor material. Upon excitation, one carrier can be substantially confined to the core and the other carrier can be substantially confined to the overcoating.

Abstract translation: 半导体纳米晶体异质结构具有由第二半导体材料的外涂层包围的第一半导体材料的芯。 在激发时，一个载体可以基本上限于核心，另一个载体可以基本上局限于外涂层。

公开(公告)号：US20080090390A1

公开(公告)日：2008-04-17

申请号：US11984944

申请日：2007-11-26

Applicant: Tetsuya Yamamoto ,  Atsutoshi Arakawa ,  Kenji Sato ,  Toshiaki Asahi

Inventor： Tetsuya Yamamoto ,  Atsutoshi Arakawa ,  Kenji Sato ,  Toshiaki Asahi

IPC: H01L21/20

CPC classification number: C30B29/48 ,  C30B23/002 ,  C30B25/02 ,  H01L21/02411 ,  H01L21/0248 ,  H01L21/02554 ,  H01L21/0256 ,  H01L21/02562 ,  H01L21/02568 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02623 ,  H01L21/02631 ,  H01L29/227 ,  H01L33/285

Abstract: The present invention relates to a method for producing an n-type ZnTe system compound semiconductor single crystal having high carrier concentration and low resistivity, the ZnTe system compound semiconductor single crystal, and a semiconductor device produced by using the ZnTe system compound semiconductor as a base member. Concretely, a first dopant and a second dopant are co-doped into the ZnTe system compound semiconductor single crystal so that the number of atoms of the second dopant becomes smaller than the number of atoms of the first dopant, the first dopant being for controlling a conductivity type of the ZnTe system compound semiconductor to a first conductivity type, and the second dopant being for controlling the conductivity type to a second conductivity type different from the first conductivity type. By the present invention, a desired carrier concentration can be achieved with a doping amount smaller than in earlier technology, and crystallinity of the obtained crystal can be improved.

Abstract translation: 本发明涉及一种具有高载流子浓度和低电阻率的n型ZnTe系化合物半导体单晶的制造方法，ZnTe系化合物半导体单晶以及使用ZnTe系化合物半导体作为基底制造的半导体装置 会员。 具体地，第一掺杂剂和第二掺杂剂共掺杂到ZnTe系化合物半导体单晶中，使得第二掺杂剂的原子数小于第一掺杂剂的原子数，第一掺杂剂用于控制 ZnTe系化合物半导体的导电类型为第一导电类型，第二掺杂剂用于将导电类型控制为不同于第一导电类型的第二导电类型。 通过本发明，可以实现与早期技术相比掺杂量小的期望载流子浓度，并且可以提高所得晶体的结晶度。

公开(公告)号：US20080089831A1

公开(公告)日：2008-04-17

申请号：US11984950

申请日：2007-11-26

Applicant: Tetsuya Yamamoto ,  Atsutoshi Arakawa ,  Kenji Sato ,  Toshiaki Asahi

Inventor： Tetsuya Yamamoto ,  Atsutoshi Arakawa ,  Kenji Sato ,  Toshiaki Asahi

IPC: C01B19/00

CPC classification number: C30B29/48 ,  C30B23/002 ,  C30B25/02 ,  H01L21/02411 ,  H01L21/0248 ,  H01L21/02554 ,  H01L21/0256 ,  H01L21/02562 ,  H01L21/02568 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02623 ,  H01L21/02631 ,  H01L29/227 ,  H01L33/285

Abstract: The present invention relates to a method for producing an n-type ZnTe system compound semiconductor single crystal having high carrier concentration and low resistivity, the ZnTe system compound semiconductor single crystal, and a semiconductor device produced by using the ZnTe system compound semiconductor as a base member. Concretely, a first dopant and a second dopant are co-doped into the ZnTe system compound semiconductor single crystal so that the number of atoms of the second dopant becomes smaller than the number of atoms of the first dopant, the first dopant being for controlling a conductivity type of the ZnTe system compound semiconductor to a first conductivity type, and the second dopant being for controlling the conductivity type to a second conductivity type different from the first conductivity type. By the present invention, a desired carrier concentration can be achieved with a doping amount smaller than in earlier technology, and crystallinity of the obtained crystal can be improved.

公开(公告)号：US07358159B2

公开(公告)日：2008-04-15

申请号：US10472446

申请日：2002-03-20

Applicant: Tetsuya Yamamoto ,  Atsutoshi Arakawa ,  Kenji Sato ,  Toshiaki Asahi

Inventor： Tetsuya Yamamoto ,  Atsutoshi Arakawa ,  Kenji Sato ,  Toshiaki Asahi

IPC: H01L21/00

CPC classification number: C30B29/48 ,  C30B23/002 ,  C30B25/02 ,  H01L21/02411 ,  H01L21/0248 ,  H01L21/02554 ,  H01L21/0256 ,  H01L21/02562 ,  H01L21/02568 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02623 ,  H01L21/02631 ,  H01L29/227 ,  H01L33/285

Abstract: The present invention relates to a method for producing an n-type ZnTe system compound semiconductor single crystal having high carrier concentration and low resistivity, the ZnTe system compound semiconductor single crystal, and a semiconductor device produced by using the ZnTe system compound semiconductor as a base member. Concretely, a first dopant and a second dopant are co-doped into the ZnTe system compound semiconductor single crystal so that the number of atoms of the second dopant becomes smaller than the number of atoms of the first dopant, the first dopant being for controlling a conductivity type of the ZnTe system compound semiconductor to a first conductivity type, and the second dopant being for controlling the conductivity type to a second conductivity type different from the first conductivity type. By the present invention, a desired carrier concentration can be achieved with a doping amount smaller than in earlier technology, and crystallinity of the obtained crystal can be improved.

Abstract translation: 本发明涉及一种具有高载流子浓度和低电阻率的n型ZnTe系化合物半导体单晶的制造方法，ZnTe系化合物半导体单晶以及使用ZnTe系化合物半导体作为基底制造的半导体装置 会员。 具体地，第一掺杂剂和第二掺杂剂共掺杂到ZnTe系化合物半导体单晶中，使得第二掺杂剂的原子数小于第一掺杂剂的原子数，第一掺杂剂用于控制 ZnTe系化合物半导体的导电类型为第一导电类型，第二掺杂剂用于将导电类型控制为不同于第一导电类型的第二导电类型。 通过本发明，可以实现与早期技术相比掺杂量小的期望载流子浓度，并且可以提高所得晶体的结晶度。

公开(公告)号：US07129107B2

公开(公告)日：2006-10-31

申请号：US11096381

申请日：2005-03-31

Applicant: Hiroyuki Okuyama ,  Masato Doi ,  Goshi Biwa ,  Toyoharu Oohata ,  Tomoyuki Kikutani

Inventor： Hiroyuki Okuyama ,  Masato Doi ,  Goshi Biwa ,  Toyoharu Oohata ,  Tomoyuki Kikutani

IPC: H01L29/20 ,  H01L31/036

CPC classification number: H01L33/24 ,  H01L21/02381 ,  H01L21/02395 ,  H01L21/02409 ,  H01L21/02411 ,  H01L21/02521 ,  H01L21/02532 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/0256 ,  H01L21/02562 ,  H01L21/02573 ,  H01L21/0262 ,  H01L21/02642 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/32 ,  H01L2224/48137 ,  H01L2224/48139

Abstract: Semiconductor light-emitting devices are provided. The semiconductor light-emitting devices include a substrate and a crystal layer selectively grown thereon at least a portion of the crystal layer is oriented along a plane that slants to or diagonally intersect a principal plane of orientation associated with the substrate thereby for example, enhancing crystal properties, preventing threading dislocations, and facilitating device miniaturization and separation during manufacturing and use thereof.

公开(公告)号：US5861626A

公开(公告)日：1999-01-19

申请号：US831170

申请日：1997-04-02

Applicant: Dipankar Chandra ,  Donald F. Weirauch ,  Thomas C. Penn

Inventor： Dipankar Chandra ,  Donald F. Weirauch ,  Thomas C. Penn

IPC: H01L21/304 ,  H01L27/14 ,  H01L31/18

CPC classification number: H01L27/14649 ,  G01J3/0256 ,  G01J3/26 ,  G01J3/2803 ,  H01L21/02381 ,  H01L21/02411 ,  H01L21/0256 ,  H01L21/02562 ,  H01L21/02625 ,  H01L21/02639 ,  H01L27/144 ,  H01L31/02164 ,  H01L31/095

Abstract: A multiple film integrated infrared (IR) detector assembly 85 consists of detector films 86, 88, 90 having different IR spectral sensitivities which are deposited on a breadboard IR transmissive but electrically insulating substrate 42. Substrate 42 is deposited on an IR filter layer comprising an HgCdTe film 70. By various techniques described, filter film 70 has a varying composition from edge 68 to 72. This compositional gradient of film 70 results in varying IR spectral absorption as shown by IR transmission graphs 10, 12, 14. Film 70 acts as a graded IR filter in concert with the response of the detector films 86, 88, 90. By the proper choice of the compositional gradients in these films, and as a result the IR spectral response, an integrated IR spectrometer may be fabricated whereby each detector 86, 87, 90 detects only specific narrow bands of IR wavelengths.

Abstract translation: 多重膜集成红外（IR）检测器组件85由检测器膜86,88,90组成，其具有不同的IR光谱灵敏度，其被沉积在面包板IR透射但电绝缘基底42上。基底42沉积在包括 HgCdTe膜70.通过所描述的各种技术，过滤膜70具有从边缘68至72变化的组成。膜70的组成梯度导致红外光谱吸收变化，如IR透射图10,12,14所示。膜70作为 与检测器膜86,88,90的响应一致的分级红外滤光器。通过适当选择这些膜中的组成梯度，结果可以制造IR光谱响应，可以制造集成的IR光谱仪，由此每个检测器 86,87,90仅检测特定的IR波长的窄带。

公开(公告)号：US5512511A

公开(公告)日：1996-04-30

申请号：US248135

申请日：1994-05-24

Applicant: Murray H. Kalisher

Inventor： Murray H. Kalisher

IPC: H01L21/368 ,  H01L21/445 ,  H01L31/18 ,  H01L21/20

CPC classification number: H01L31/1832 ,  H01L21/02411 ,  H01L21/0248 ,  H01L21/02551 ,  H01L21/02562 ,  H01L21/02625 ,  H01L21/445

Abstract: A method for fabricating a two layer epitaxial structure by a liquid phase epitaxy (LPE) process, the structure being comprised of a Group II-VI semiconductor material. The method includes the steps of providing an LPE growth chamber that contains a molten Group II-VI semiconductor material 24, the molten Group II-VI semiconductor material having a first temperature (T.sub.1); growing, at the first temperature, a base layer (22) from the molten Group II-VI semiconductor material, the base layer being grown to have a first bandgap energy; employing a shutter mechanism (30) to isolate the base layer from the molten Group II-VI semiconductor material without removing the base layer from the growth chamber; reducing the first temperature of the molten Group II-VI semiconductor material to a second temperature (T.sub.2); and growing from the same molten Group II-VI semiconductor material a contact layer (32) upon a surface (22a) of the base layer, the contact layer being grown to have a second bandgap energy that is narrower than the first bandgap energy. The base layer is not removed from the growth chamber until after the growth of the contact layer, and is thus not required to be exposed to the atmosphere or to any other sources of contaminates.

Abstract translation: 一种通过液相外延（LPE）工艺制造双层外延结构的方法，该结构由II-VI族半导体材料组成。 该方法包括以下步骤：提供含有熔融的II-VI族半导体材料24，具有第一温度（T1）的熔融II-VI族半导体材料的LPE生长室; 在第一温度下，从熔融的II-VI族半导体材料生长基底层（22），生长基底层以具有第一带隙能量; 使用快门机构（30）将基底层与熔融的II-VI族半导体材料隔离，而不从生长室移除基底层; 将熔融的II-VI族半导体材料的第一温度降低到第二温度（T2）; 并且从相同的熔融的II-VI族半导体材料生长在所述基底层的表面（22a）上的接触层（32），所述接触层被生长以具有比所述第一带隙能量窄的第二带隙能量。 直到接触层生长之后基底层才从生长室中除去，因此不需要暴露于大气或任何其它污染源。