Selective placement of carbon nanotubes via coulombic attraction of oppositely charged carbon nanotubes and self-assembled monolayers
    45.
    发明授权
    Selective placement of carbon nanotubes via coulombic attraction of oppositely charged carbon nanotubes and self-assembled monolayers 有权
    通过相对充电的碳纳米管和自组装单层的库仑吸引选择性地放置碳纳米管

    公开(公告)号:US09273004B2

    公开(公告)日:2016-03-01

    申请号:US13248176

    申请日:2011-09-29

    Abstract: A method of forming a structure having selectively placed carbon nanotubes, a method of making charged carbon nanotubes, a bi-functional precursor, and a structure having a high density carbon nanotube layer with minimal bundling. Carbon nanotubes are selectively placed on a substrate having two regions. The first region has an isoelectric point exceeding the second region's isoelectric point. The substrate is immersed in a solution of a bi-functional precursor having anchoring and charged ends. The anchoring end bonds to the first region to form a self-assembled monolayer having a charged end. The substrate with charged monolayer is immersed in a solution of carbon nanotubes having an opposite charge to form a carbon nanotube layer on the self-assembled monolayer. The charged carbon nanotubes are made by functionalization or coating with an ionic surfactant.

    Abstract translation: 形成具有选择性放置的碳纳米管的结构的方法,制造带电碳纳米管的方法,双功能前体和具有最小捆扎的具有高密度碳纳米管层的结构。 碳纳米管选择性地放置在具有两个区域的基板上。 第一区域的等电点超过第二区域的等电点。 将基底浸入具有锚定和带电末端的双功能前体的溶液中。 锚定端连接到第一区域以形成具有带电端的自组装单层。 将具有带电单层的衬底浸入具有相反电荷的碳纳米管的溶液中,以在自组装单层上形成碳纳米管层。 带电的碳纳米管通过官能化或用离子表面活性剂涂覆制成。

    Graphene nanomesh based charge sensor
    47.
    发明授权
    Graphene nanomesh based charge sensor 有权
    石墨烯纳米薄膜电荷传感器

    公开(公告)号:US09102540B2

    公开(公告)日:2015-08-11

    申请号:US13310194

    申请日:2011-12-02

    Abstract: A graphene nanomesh based charge sensor and method for producing a graphene nanomesh based charge sensor. The method includes generating multiple holes in graphene in a periodic way to create a graphene nanomesh with a patterned array of multiple holes, passivating an edge of each of the multiple holes of the graphene nanomesh to allow for functionalization of the graphene nanomesh, and functionalizing the passivated edge of each of the multiple holes of the graphene nanomesh with a chemical compound that facilitates chemical binding of a receptor of a target molecule to the edge of one or more of the multiple holes, allowing the target molecule to bind to the receptor, causing a charge to be transferred to the graphene nanomesh to produce a graphene nanomesh based charge sensor for the target molecule.

    Abstract translation: 一种基于石墨烯纳米薄膜的电荷传感器和用于生产基于石墨烯纳米薄膜的电荷传感器的方法。 该方法包括以周期性方式在石墨烯中产生多个孔以产生具有多个孔的图案化阵列的石墨烯纳米粒子,钝化石墨烯纳米粒子的多个孔中的每一个的边缘以允许石墨烯纳米粒子的官能化,并使 石墨烯纳米粒子的多个孔的每个的钝化边缘具有促进靶分子的受体与多个孔中的一个或多个的边缘的化学结合的化学化合物,允许靶分子结合受体,导致 将转移到石墨烯纳米片上的电荷以产生用于靶分子的基于石墨烯纳米膜的电荷传感器。

    Cerium (IV) Salts as Effective Dopant for Carbon Nanotubes and Graphene
    50.
    发明申请
    Cerium (IV) Salts as Effective Dopant for Carbon Nanotubes and Graphene 有权
    铈(IV)盐作为碳纳米管和石墨烯的有效掺杂剂

    公开(公告)号:US20130153831A1

    公开(公告)日:2013-06-20

    申请号:US13329184

    申请日:2011-12-16

    Abstract: A process comprises combining a Ce (IV) salt dissolved in a solvent comprising water with a carbon material comprising CNT or graphene wherein the Ce (IV) salt is selected from a Ce (IV) ammonium salt of a nitrogen oxide acid, Ce (IV) ammonium salt of a sulfur oxide acid, Ce (IV) salt of a lower alkyl organo sulfur acid, or Ce (IV) salt of a lower alkane organo sulfur acid. In one embodiment the Ce (IV) salt is selected from Ce (IV) ammonium nitrate, Ce (IV) ammonium sulfate, Ce (IV) lower alkyllsulfonate, or Ce (IV) trifluoro lower alkanesulfonate. A product is produced by this process. An article of manufacture comprises this product on a substrate.

    Abstract translation: 一种方法包括将溶解在包含水的溶剂中的Ce(IV)盐与包含CNT或石墨烯的碳材料组合,其中Ce(IV)盐选自氮氧化物的Ce(IV)铵盐,Ce(IV )硫酸盐的铵盐,低级烷基有机硫酸的Ce(IV)盐或低级烷烃有机硫酸的Ce(IV)盐。 在一个实施方案中,Ce(IV)盐选自Ce(IV)硝酸铵,Ce(IV)硫酸铵,Ce(IV)低级烷基磺酸盐或Ce(IV)三氟低级链烷磺酸盐。 一个产品是通过这个过程生产的。 制品在基材上包含该产品。

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