公开(公告)号：US20100133551A1

公开(公告)日：2010-06-03

申请号：US12421130

申请日：2009-04-09

Applicant: Sang-Heung Lee ,  Hae Cheon Kim ,  Dong Min Kang ,  Dong-Young Kim ,  Jae-Kyoung Mun ,  Hokyun Ahn ,  Jong-Won Lim ,  Woo Jin Chang ,  Hong Gu Ji ,  Eun Soo Nam

Inventor： Sang-Heung Lee ,  Hae Cheon Kim ,  Dong Min Kang ,  Dong-Young Kim ,  Jae-Kyoung Mun ,  Hokyun Ahn ,  Jong-Won Lim ,  Woo Jin Chang ,  Hong Gu Ji ,  Eun Soo Nam

IPC: H01L31/147 ,  H01L33/00

CPC classification number: H01L25/167 ,  H01L2224/0603 ,  H01L2224/45014 ,  H01L2224/48137 ,  H01L2224/4903 ,  H01L2224/73265 ,  H01L2924/1305 ,  H01L2924/30107 ,  H01L2924/00

Abstract: Provided is a high-speed optical interconnection device. The high-speed optical interconnection device includes a first semiconductor chip, light emitters, optical detectors, and a second semiconductor chip, which are disposed on a silicon-on-insulator (SOI) substrate. The light emitters receive electrical signals from the first semiconductor chip to output optical signals. The optical detectors detect the optical signals to convert the optical signals into electrical signals. The second semiconductor chip receives the electrical signals converted by the optical detectors.

Abstract translation: 提供了一种高速光互连装置。 高速光互连装置包括设置在绝缘体上硅（SOI））衬底上的第一半导体芯片，发光体，光检测器和第二半导体芯片。 光发射器接收来自第一半导体芯片的电信号以输出光信号。 光检测器检测光信号，将光信号转换为电信号。 第二半导体芯片接收由光学检测器转换的电信号。

公开(公告)号：US20060108574A1

公开(公告)日：2006-05-25

申请号：US11282339

申请日：2005-11-18

Applicant: Eun Soo Nam ,  Yong Won Kim ,  Seon Eui Hong ,  Myung Sook Oh ,  Bo Woo Kim

Inventor： Eun Soo Nam ,  Yong Won Kim ,  Seon Eui Hong ,  Myung Sook Oh ,  Bo Woo Kim

IPC: H01L29/06 ,  H01L31/0328

CPC classification number: H01L31/18 ,  B82Y20/00 ,  G02F1/017

Abstract: Provided are an optoelectronic (OE) transmitter integrated circuit (IC) and method of fabricating the same using a selective growth process. In the OE transmitter IC, a driving circuit, which includes a double heterojunction bipolar transistor (DHBT) and amplifies received electric signals to drive an electroabsorption (EA) modulator, and the EA modulator with a multi-quantum well (MQW) absorption layer are integrated as a single chip on a semi-insulating substrate. The MQW absorption layer of the EA modulator and an MQW insertion layer of the DHBT are formed to different thicknesses from each other using a selective MOCVD growth process.

公开(公告)号：US06917633B2

公开(公告)日：2005-07-12

申请号：US10376455

申请日：2003-03-03

Applicant: Ho-Young Kim ,  Eun-Soo Nam ,  Kyoung-Ik Cho

Inventor： Ho-Young Kim ,  Eun-Soo Nam ,  Kyoung-Ik Cho

IPC: H01S3/05 ,  H01S3/067 ,  H01S3/08 ,  H01S3/082 ,  H01S3/1055 ,  H01S3/16 ,  H01S3/10 ,  H01S3/083

CPC classification number: H01S3/06791 ,  H01S3/06725 ,  H01S3/0675 ,  H01S3/08022 ,  H01S3/082 ,  H01S3/1055 ,  H01S3/1608

Abstract: There is provided a millimeter wave band frequency optical oscillator predicted to be used as a millimeter wave oscillating frequency signal source in a base station of a millimeter wave wireless transmission system. The optical oscillator has a double resonator structure in which a pair of wavelength tunable fiber grating mirrors are inserted into a unilateral fiber-ring laser resonator in order to internally and additionally form a linear laser resonator. The double resonator structure composed of the two stable laser resonators can oscillate laser of two modes. Due to a beat phenomenon occurring between the two modes, received laser is modulated to an ultra-speed frequency of 60 GHz or greater. A variation in the gain within a resonator is induced by a polarization controller using the dependency of laser modes upon polarization. A modulation frequency is consecutively changed from 60 GHz to 80 GHz by controlling the wavelength of light reflected by the fiber grating mirrors.

Abstract translation: 提供了在毫米波无线传输系统的基站中预测用作毫米波振荡频率信号源的毫米波段频率光学振荡器。 光学振荡器具有双谐振器结构，其中一对波长可调光纤光栅镜被插入到单边光纤环激光谐振器中，以便在内部并另外形成线性激光谐振器。 由两个稳定的激光谐振器组成的双谐振器结构可以振荡两种模式的激光。 由于在两种模式之间发生拍子现象，所接收的激光器被调制到60GHz或更大的超速频率。 谐振器内增益的变化由偏振控制器引起，该偏振控制器使用激光模式对极化的依赖性。 通过控制由光纤光栅镜反射的光的波长，调制频率从60GHz连续地变化到80GHz。

公开(公告)号：US08853821B2

公开(公告)日：2014-10-07

申请号：US13618873

申请日：2012-09-14

Applicant: Seong-il Kim ,  Sang-Heung Lee ,  Jong-Won Lim ,  Hyung Sup Yoon ,  Jongmin Lee ,  Byoung-Gue Min ,  Jae Kyoung Mun ,  Eun Soo Nam

Inventor： Seong-il Kim ,  Sang-Heung Lee ,  Jong-Won Lim ,  Hyung Sup Yoon ,  Jongmin Lee ,  Byoung-Gue Min ,  Jae Kyoung Mun ,  Eun Soo Nam

IPC: H01L21/02

CPC classification number: H01L28/91 ,  H01L23/481 ,  H01L28/92 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Provided are vertical capacitors and methods of forming the same. The formation of the vertical capacitor may include forming input and output electrodes on a top surface of a substrate, etching a bottom surface of the substrate to form via electrodes, and then, forming a dielectric layer between the via electrodes. As a result, a vertical capacitor with high capacitance can be provided in a small region of the substrate.

Abstract translation: 提供垂直电容器及其形成方法。 垂直电容器的形成可以包括在衬底的顶表面上形成输入和输出电极，蚀刻衬底的底表面以形成通孔电极，然后在通孔电极之间形成电介质层。 结果，可以在基板的小区域中提供具有高电容的垂直电容器。

公开(公告)号：US08772833B2

公开(公告)日：2014-07-08

申请号：US13592560

申请日：2012-08-23

Applicant: Woo Jin Chang ,  Jong Won Lim ,  Ho Kyun Ahn ,  Sang Choon Ko ,  Sung Bum Bae ,  Chull Won Ju ,  Young Rak Park ,  Jae Kyoung Mun ,  Eun Soo Nam

Inventor： Woo Jin Chang ,  Jong Won Lim ,  Ho Kyun Ahn ,  Sang Choon Ko ,  Sung Bum Bae ,  Chull Won Ju ,  Young Rak Park ,  Jae Kyoung Mun ,  Eun Soo Nam

IPC: H01L29/15

CPC classification number: H01L29/66901 ,  H01L29/2003 ,  H01L29/401 ,  H01L29/402 ,  H01L29/42316 ,  H01L29/66462 ,  H01L29/7786

Abstract: Disclosed are a power semiconductor device and a method of fabricating the same which can increase a breakdown voltage of the device through a field plate formed between a gate electrode and a drain electrode and achieve an easier manufacturing process at the same time. The power semiconductor device according to an exemplary embodiment of the present disclosure includes a source electrode and a drain electrode formed on a substrate; a dielectric layer formed between the source electrode and the drain electrode to have a lower height than heights of the two electrodes and including an etched part exposing the substrate; a gate electrode formed on the etched part; a field plate formed on the dielectric layer between the gate electrode and the drain electrode; and a metal configured to connect the field plate and the source electrode.

Abstract translation: 公开了功率半导体器件及其制造方法，其可以通过形成在栅电极和漏电极之间的场板来增加器件的击穿电压，并且同时实现更容易的制造工艺。 根据本公开的示例性实施例的功率半导体器件包括形成在衬底上的源电极和漏电极; 形成在所述源电极和所述漏电极之间的电介质层具有比所述两个电极的高度低的高度，并且包括暴露所述衬底的蚀刻部分; 形成在蚀刻部分上的栅电极; 形成在栅电极和漏电极之间的电介质层上的场板; 以及配置成连接场板和源电极的金属。

公开(公告)号：US08693459B2

公开(公告)日：2014-04-08

申请号：US12772350

申请日：2010-05-03

Applicant: Chun Ju Youn ,  Yong-Hwan Kwon ,  Jong-Hoi Kim ,  Joong-Seon Choe ,  Kwang-Seong Choi ,  Kyoungwoo Heo ,  Eun Soo Nam

Inventor： Chun Ju Youn ,  Yong-Hwan Kwon ,  Jong-Hoi Kim ,  Joong-Seon Choe ,  Kwang-Seong Choi ,  Kyoungwoo Heo ,  Eun Soo Nam

IPC: H04J3/06

CPC classification number: H04L25/0226 ,  H04B10/532 ,  H04B10/548 ,  H04J14/06 ,  H04L27/2613

Abstract: Provided is a polarization division multiplexed optical OFDM transmitter. The polarization division multiplexed optical OFDM transmitter includes a data demultiplexer, a training symbol generation unit and an optical up-converter and polarization division multiplexing unit. The data demultiplexer divides a transmission signal into a plurality of groups. The training symbol generation unit allocates a plurality of training symbols for each OFDM data which is included in the respective multiplexed groups, and allocates repetitive data in a time domain for the respective training symbols for data of 0 to periodically appear for the respective training symbols in a frequency domain. The optical up-converter and polarization division multiplexing unit performs optical frequency band conversion and polarization division multiplexing on an output of the training symbol generation unit to output a polarization division multiplexed optical OFDM signal corresponding to a plurality of polarization components.

Abstract translation: 提供了一种偏振分复用光OFDM传输器。 偏振分复用光OFDM传输器包括数据解复用器，训练符号生成单元和光上变频器和偏振分割复用单元。 数据解复用器将发送信号分成多个组。 训练符号生成单元为包含在各个多路复用组中的每个OFDM数据分配多个训练符号，并且在时域中分配针对各个训练符号的各个训练符号的重复数据，以针对各个训练符号周期性出现 频域。 光学上变频器和偏振分光复用单元在训练符号生成单元的输出上执行光频带转换和偏振分割复用，以输出对应于多个偏振分量的偏振复用光OFDM信号。

公开(公告)号：US08521040B2

公开(公告)日：2013-08-27

申请号：US12773573

申请日：2010-05-04

Applicant: Chun Ju Youn ,  Yong-Hwan Kwon ,  Eun Soo Nam ,  Jong-Hoi Kim ,  Joong-Seon Choe ,  Kwang-Seong Choi

Inventor： Chun Ju Youn ,  Yong-Hwan Kwon ,  Eun Soo Nam ,  Jong-Hoi Kim ,  Joong-Seon Choe ,  Kwang-Seong Choi

IPC: H04B10/06

CPC classification number: H04J14/00 ,  H04B10/6971 ,  H04L27/2096 ,  H04L27/2649 ,  H04L27/2697 ,  H04L2025/03375

Abstract: Provided is an optical OFDM receiver. The optical OFDM receiver receives an optical signal dependent on the nonlinearity of a transmitter. The optical OFDM receives includes an optical down converter, a nonlinearity compensator, and an OFDM demodulator. The optical down converter converts the optical signal into an electrical signal. The nonlinearity compensator filters the electrical signal, for compensating distortion which is added to the optical signal when the transmitter performs optical modulation. The OFDM demodulator demodulates the distortion-compensated electrical signal in an OFDM scheme.

Abstract translation: 提供了一种光学OFDM接收机。 光OFDM接收机根据发射机的非线性接收光信号。 光OFDM接收包括光下变频器，非线性补偿器和OFDM解调器。 光学下变频器将光信号转换成电信号。 非线性补偿器对电信号进行滤波，用于补偿当发射机进行光调制时加到光信号上的失真。 OFDM解调器以OFDM方案解调失真补偿电信号。

公开(公告)号：US08421538B2

公开(公告)日：2013-04-16

申请号：US13185913

申请日：2011-07-19

Applicant: Sang-Heung Lee ,  Hae Cheon Kim ,  Eun Soo Nam

Inventor： Sang-Heung Lee ,  Hae Cheon Kim ,  Eun Soo Nam

IPC: H03F3/04

CPC classification number: H03F3/08 ,  H03F1/34 ,  H03F3/3432 ,  H03F2200/121 ,  H03F2200/141 ,  H03F2200/18

Abstract: Provided is a feedback amplifier including: an amplification circuit unit to generate an output voltage by amplifying an input voltage inputted through an input terminal; an output circuit unit to output the generated output voltage through an output terminal; a feedback circuit unit to control the gain of the amplification circuit unit by determining a total feedback resistance value using an external control signal and controlling an input current while the total feedback resistance value is determined; and a bias circuit unit to apply a bias voltage to the feedback circuit unit.

Abstract translation: 提供一种反馈放大器，包括：放大电路单元，通过放大通过输入端子输入的输入电压来产生输出电压; 输出电路单元，用于通过输出端子输出产生的输出电压; 反馈电路单元，其通过使用外部控制信号确定总反馈电阻值来控制放大电路单元的增益，并且在确定总反馈电阻值的同时控制输入电流; 以及偏置电路单元，用于向反馈电路单元施加偏置电压。

公开(公告)号：US20130069127A1

公开(公告)日：2013-03-21

申请号：US13556377

申请日：2012-07-24

Applicant: Ho Kyun AHN ,  Jong-Won Lim ,  Sung Bum Bae ,  Sang Choon Ko ,  Young Rak Park ,  Woo Jin Chang ,  Jae Kyoung Mun ,  Eun Soo Nam ,  Jeong Jin Kim ,  Chull Won Ju

Inventor： Ho Kyun AHN ,  Jong-Won Lim ,  Sung Bum Bae ,  Sang Choon Ko ,  Young Rak Park ,  Woo Jin Chang ,  Jae Kyoung Mun ,  Eun Soo Nam ,  Jeong Jin Kim ,  Chull Won Ju

IPC: H01L29/78 ,  H01L21/20

CPC classification number: H01L29/7786 ,  H01L29/2003 ,  H01L29/402 ,  H01L29/42316 ,  H01L29/66462 ,  H01L29/66863 ,  H01L29/8128

Abstract: A method for fabricating a field effect transistor according to an exemplary embodiment of the present disclosure includes: forming an active layer, a cap layer, an ohmic metal layer and an insulating layer on a substrate; forming multilayered photoresists on the insulating layer; patterning the multilayered photoresists to form a photoresist pattern including a first opening for gate electrode and a second opening for field electrode; etching the insulating layer by using the photoresist pattern as an etching mask so that the insulating layer in the first opening is etched more deeply and the cap layer is exposed through the first opening; etching the cap layer exposed by etching the insulating layer through the first opening to form a gate recess region; and depositing a metal on the gate recess region and the etched insulating layer to form a gate-field electrode layer.

Abstract translation: 根据本公开的示例性实施例的制造场效应晶体管的方法包括：在衬底上形成有源层，覆盖层，欧姆金属层和绝缘层; 在所述绝缘层上形成多层光致抗蚀剂; 图案化多层光致抗蚀剂以形成包括用于栅电极的第一开口和场电极的第二开口的光致抗蚀剂图案; 通过使用光致抗蚀剂图案作为蚀刻掩模来蚀刻绝缘层，使得第一开口中的绝缘层被更深地蚀刻并且盖层通过第一开口暴露; 通过蚀刻绝缘层通过第一开口蚀刻暴露的盖层，以形成栅极凹陷区域; 以及在所述栅极凹部区域和所述蚀刻绝缘层上沉积金属以形成栅极电极层。

公开(公告)号：US08304895B2

公开(公告)日：2012-11-06

申请号：US12764330

申请日：2010-04-21

Applicant: Woojin Chang ,  Soon Il Yeo ,  Hae Cheon Kim ,  Eun Soo Nam

Inventor： Woojin Chang ,  Soon Il Yeo ,  Hae Cheon Kim ,  Eun Soo Nam

IPC: H01L23/053

CPC classification number: H01L23/5389 ,  H01L23/3107 ,  H01L24/83 ,  H01L24/90 ,  H01L25/03 ,  H01L2224/90 ,  H01L2924/00011 ,  H01L2924/01079 ,  H01L2924/09701 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15153 ,  H01L2924/1517 ,  H01L2224/83851 ,  H01L2924/00

Abstract: A semiconductor package is provided. The semiconductor package includes a package body, a plurality of semiconductor chips, and an external connection terminal. The package body is stacked with a plurality of sheets where conductive patterns and vias are disposed. The plurality of semiconductor chips are inserted into insert slots extending from one surface of the package body. The external connection terminal is provided on other surface opposite to the one surface of the package body. Here, the plurality of semiconductor chips are electrically connected to the external connection terminal.

Abstract translation: 提供半导体封装。 半导体封装包括封装体，多个半导体芯片和外部连接端子。 封装体与设置有导电图案和通孔的多个片层叠。 多个半导体芯片被插入到从封装主体的一个表面延伸的插入槽中。 外部连接端子设置在与封装主体的一个表面相对的另一表面上。 这里，多个半导体芯片电连接到外部连接端子。