公开(公告)号：US20050269819A1

公开(公告)日：2005-12-08

申请号：US11137083

申请日：2005-05-25

Applicant: James Chambers

Inventor： James Chambers

IPC: B32B27/10 ,  B65D5/42 ,  B65D79/00 ,  G09F3/02 ,  G09F23/00 ,  G09C3/00

CPC classification number: B65D79/00 ,  B32B27/10 ,  B65D5/4212 ,  B65D5/4216 ,  B65D2201/00 ,  B65D2203/00 ,  G09F3/0294 ,  G09F23/00

Abstract: A package for articles such as consumer goods that comprised security measures embedded within the package itself in order determine authenticity of goods is described. The package preferably comprises a packaging substrate material laminated to a face sheet having the security measures. The package may be printed with graphical indicia. The package may be authenticated by viewing the security measures, which may preferably be visible only under infrared light.

Abstract translation: 描述了包括诸如消费品的物品的包装，其包括嵌入在包装内的安全措施以便确定货物的真实性。 封装优选地包括层压到具有安全措施的面板的封装衬底材料。 包装可以用图形标记印刷。 可以通过查看安全措施来认证包装，其可以优选仅在红外光下可见。

公开(公告)号：US20050263832A1

公开(公告)日：2005-12-01

申请号：US11124942

申请日：2005-05-10

Applicant: James Chambers

Inventor： James Chambers

IPC: H01L21/3205 ,  H01L21/336 ,  H01L27/148 ,  H01L29/76 ,  H01L29/786 ,  H01L31/18

CPC classification number: H01L29/785 ,  H01L29/66553 ,  H01L29/66651 ,  H01L29/66795 ,  H01L29/7853 ,  H01L31/18

Abstract: Multi-gate MOS transistors and fabrication methods are described, in which the transistor semiconductor body thickness or width is lithography independent, allowing scaled triple and quad-gate devices having semiconductor bodies smaller than a lateral gate length dimension. A form structure is provided over a semiconductor wafer starting structure, and spacers are formed along one or more sidewalls of an opening in the form structure. A semiconductor material is deposited in the opening by epitaxial growth or other deposition process, and the form structure and the spacer are removed. A gate structure is then formed along the top and sides of a central portion of the formed semiconductor body. The spacer may be L-shaped, providing an undercut or recess at the bottom of the semiconductor body sidewall, and the gate may be formed in the undercut area to allow fabrication of more than three gates.

公开(公告)号：US20050136679A1

公开(公告)日：2005-06-23

申请号：US10745449

申请日：2003-12-22

Applicant: Luigi Colombo ,  James Chambers ,  Mark Visokay

Inventor： Luigi Colombo ,  James Chambers ,  Mark Visokay

IPC: H01L21/28 ,  H01L21/311 ,  H01L21/314 ,  H01L21/316 ,  H01L21/318 ,  H01L21/336 ,  H01L29/51 ,  H01L21/302

CPC classification number: H01L21/28194 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/022 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/31111 ,  H01L21/3144 ,  H01L21/3145 ,  H01L21/31608 ,  H01L21/3185 ,  H01L29/517 ,  H01L29/518 ,  H01L29/665 ,  H01L29/6656 ,  H01L29/6659 ,  Y10S438/91 ,  Y10S438/954

Abstract: The present invention pertains to forming a transistor in the absence of hydrogen, or in the presence of a significantly reduced amount of hydrogen. In this manner, a high-k material can be utilized to form a gate dielectric layer in the transistor and facilitate device scaling while mitigating defects that can be introduced into the high-k material by the presence of hydrogen and/or hydrogen containing compounds.

Abstract translation: 本发明涉及在不存在氢的情况下形成晶体管，或者在显着减少量的氢的存在下。 以这种方式，可以利用高k材料在晶体管中形成栅极电介质层，并且便于器件缩放，同时减轻可通过存在氢和/或含氢化合物引入高k材料的缺陷。

公开(公告)号：US20050136632A1

公开(公告)日：2005-06-23

申请号：US10738957

申请日：2003-12-17

Applicant: Antonio Rotondaro ,  Mark Visokay ,  James Chambers ,  Luigi Colombo

Inventor： Antonio Rotondaro ,  Mark Visokay ,  James Chambers ,  Luigi Colombo

IPC: H01L21/28 ,  H01L21/3205 ,  H01L21/336 ,  H01L21/4763 ,  H01L29/51

CPC classification number: H01L21/28185 ,  H01L21/28194 ,  H01L21/28202 ,  H01L29/513 ,  H01L29/518

Abstract: Methods and systems are disclosed that facilitate semiconductor fabrication by fabricating transistor devices having gate dielectrics with selectable thicknesses in different regions of semiconductor devices. The thicknesses correspond to operating voltages of the corresponding transistor devices. Furthermore, the present invention also provides systems and methods that can fabricate the gate dielectrics with high-k dielectric material, which allows a thicker gate dielectric than conventional silicon dioxide.

Abstract translation: 公开了通过制造具有在半导体器件的不同区域中具有可选厚度的栅极电介质的晶体管器件来促进半导体制造的方法和系统。 厚度对应于相应的晶体管器件的工作电压。 此外，本发明还提供了可以制造具有高k电介质材料的栅极电介质的系统和方法，其允许比常规二氧化硅更厚的栅极电介质。

公开(公告)号：US20050130442A1

公开(公告)日：2005-06-16

申请号：US10734708

申请日：2003-12-11

Applicant: Mark Visokay ,  Luigi Colombo ,  James Chambers ,  Antonio Rotondaro ,  Haowen Bu

Inventor： Mark Visokay ,  Luigi Colombo ,  James Chambers ,  Antonio Rotondaro ,  Haowen Bu

IPC: H01L21/28 ,  H01L21/314 ,  H01L21/316 ,  H01L29/51 ,  H01L21/3205 ,  H01L21/31 ,  H01L21/469

CPC classification number: H01L21/28185 ,  H01L21/02148 ,  H01L21/02271 ,  H01L21/02332 ,  H01L21/02337 ,  H01L21/0234 ,  H01L21/28202 ,  H01L21/3144 ,  H01L21/3162 ,  H01L21/31637 ,  H01L21/31641 ,  H01L21/31645 ,  H01L21/31691 ,  H01L29/517 ,  H01L29/518

Abstract: Methods are disclosed for treating deposited gate dielectric materials, in which the deposited dielectric is subjected to one or more non-oxidizing anneals to densify the material, one or more oxidizing anneals to mitigate material defects, and to a nitridation process to introduce nitrogen into the gate dielectric. The annealing may be performed before and/or after the nitridation to mitigate deposition and/or nitridation defects and to densify the material while mitigating formation of unwanted low dielectric constant oxides at the interface between the gate dielectric and the semiconductor substrate.

Abstract translation: 公开了用于处理沉积的栅极电介质材料的方法，其中沉积的电介质经受一个或多个非氧化退火以致密化材料，一个或多个氧化退火以减轻材料缺陷，以及氮化过程以将氮引入 栅电介质。 可以在氮化之前和/或之后进行退火以减轻沉积和/或氮化缺陷并致密材料，同时减轻在栅极电介质和半导体衬底之间的界面处形成不想要的低介电常数氧化物。

公开(公告)号：US20050124109A1

公开(公告)日：2005-06-09

申请号：US10726987

申请日：2003-12-03

Applicant: Manuel Quevedo-Lopez ,  James Chambers ,  Luigi Colombo ,  Mark Visokay

Inventor： Manuel Quevedo-Lopez ,  James Chambers ,  Luigi Colombo ,  Mark Visokay

IPC: C23C16/40 ,  C23C16/56 ,  H01L21/3105 ,  H01L21/314 ,  H01L21/316 ,  H01L21/302 ,  H01L21/461 ,  H01L21/8242 ,  H01L21/31

CPC classification number: H01L21/0234 ,  C23C16/401 ,  C23C16/405 ,  C23C16/56 ,  H01L21/02175 ,  H01L21/02181 ,  H01L21/02194 ,  H01L21/3105 ,  H01L21/31053 ,  H01L21/3143 ,  H01L21/3144 ,  H01L21/31604 ,  H01L21/31645 ,  H01L21/31691

Abstract: A system and method for manufacturing semiconductor devices with dielectric layers having a dielectric constant greater than silicon dioxide includes depositing a dielectric layer on a substrate and subjecting the dielectric layer to a plasma to reduce top surface roughness in the dielectric layer.

Abstract translation: 具有介电常数大于二氧化硅的电介质层的半导体器件的系统和方法包括在基片上沉积电介质层并对介电层进行等离子体以减小电介质层中的顶表面粗糙度。

公开(公告)号：US20050093028A1

公开(公告)日：2005-05-05

申请号：US10696130

申请日：2003-10-29

Applicant: James Chambers

Inventor： James Chambers

IPC: H01L21/3205 ,  H01L21/336 ,  H01L27/148 ,  H01L29/76 ,  H01L29/786 ,  H01L31/18

CPC classification number: H01L29/785 ,  H01L29/66553 ,  H01L29/66651 ,  H01L29/66795 ,  H01L29/7853 ,  H01L31/18

Abstract: Multi-gate MOS transistors and fabrication methods are described, in which the transistor semiconductor body thickness or width is lithography independent, allowing scaled triple and quad-gate devices having semiconductor bodies smaller than a lateral gate length dimension. A form structure is provided over a semiconductor wafer starting structure, and spacers are formed along one or more sidewalls of an opening in the form structure. A semiconductor material is deposited in the opening by epitaxial growth or other deposition process, and the form structure and the spacer are removed. A gate structure is then formed along the top and sides of a central portion of the formed semiconductor body. The spacer may be L-shaped, providing an undercut or recess at the bottom of the semiconductor body sidewall, and the gate may be formed in the undercut area to allow fabrication of more than three gates.

公开(公告)号：US06355776B1

公开(公告)日：2002-03-12

申请号：US09444791

申请日：1999-11-22

Applicant: Franco A. Ferrari ,  Charles Richardson ,  James Chambers ,  Stuart Causey ,  Thomas J. Pollock ,  Joseph Cappello ,  John W. Crissman

Inventor： Franco A. Ferrari ,  Charles Richardson ,  James Chambers ,  Stuart Causey ,  Thomas J. Pollock ,  Joseph Cappello ,  John W. Crissman

IPC: C07K1300

CPC classification number: C07K14/43586 ,  C07K14/78 ,  C07K2319/00 ,  C07K2319/02 ,  C07K2319/33 ,  C07K2319/61 ,  C12N1/06 ,  C12N15/11 ,  C12N15/62 ,  C12N15/66 ,  C12N15/70 ,  C12N15/75

Abstract: Novel polypeptides comprising repetitive units of amino acids, as well as synthetic genes encoding the subject polypeptides are provided. The subject polypeptides are characterized by comprising repetitive units of amino acids, where the repetitive units are present in naturally occurring proteins, particularly naturally occurring structural proteins. The subject polypeptides find use in a variety of applications, such as structural components of prosthetic devices, synthetic fibers, and the like.

Abstract translation: 提供了包含氨基酸重复单元的新型多肽，以及编码本发明多肽的合成基因。 主题多肽的特征在于包含氨基酸的重复单元，其中重复单元存在于天然存在的蛋白质中，特别是天然存在的结构蛋白质中。 主题多肽可用于各种应用，例如假体装置的结构部件，合成纤维等。

公开(公告)号：US6043379A

公开(公告)日：2000-03-28

申请号：US355265

申请日：1999-07-26

Applicant: Anthony Marfat ,  Robert James Chambers

Inventor： Anthony Marfat ,  Robert James Chambers

IPC: C07D333/38

CPC classification number: C07D333/38

Abstract: A process for the preparation of the compound of the formula ##STR1## wherein R.sup.1 is OH, which comprises the steps of a) treating the compound of the formula ##STR2## with an inorganic fluoride, of the formula M.sup.2 F wherein M.sup.2 is an alkali metal cation, at an elevated temperature in the presence of a compound of the formula R.sup.4 P.sup.+ Z.sup.- and a compound of the formula R.sup.5 vic (COW).sub.2 wherein R.sup.4 and R.sup.5 are each selected from optionally substituted (C.sub.6 -C.sub.10)aryl and optionally substituted (C.sub.1 -C.sub.6)alkyl, and W is halo; to form the compound of the formula; ##STR3## and b) i) treating the compound of the formula IV with an aqueous solution of a base, of the formula MOH, wherein M is an alkali metal cation, andii) treating the product of step i) with a mineral acid. A compound of the formula ##STR4## wherein R.sup.1 is selected from the group consisting of, halo, R.sup.7 O, R.sup.7 COO and N(R.sup.8).sub.2 wherein R.sup.7 is (C.sub.1 -C.sub.6)alkyl or (C.sub.6 -C.sub.10)aryl and each R.sup.8 is selected from hydrogen and R.sup.7 with the proviso that R.sup.7 is not methyl when R.sup.1 is R.sup.7 O.

Abstract translation: PCT No.PCT / IB98 / 00304 Sec。 371日期：1999年7月26日 102（e）1999年7月26日PCT 1998年3月9日PCT PCT。 出版物WO98 / 45282 日期1998年10月15日制备下式化合物的方法其中R1是OH，其包括以下步骤：a）用式M2F的无机氟化物处理式的化合物，其中M2是碱金属阳离子 在式R4P + Z-的化合物和式R 5 vic（COW）2的化合物的存在下，在升高的温度下，其中R 4和R 5各自选自任选取代的（C 6 -C 10）芳基和任选取代的（C 1 -C 10） -C 6）烷基，W是卤素; 形成式的化合物; 和b）i）用式MOH的碱的水溶液处理式IV的化合物，其中M是碱金属阳离子，和ii）用无机酸处理步骤i）的产物。 下式的化合物其中R 1选自卤素，R 7 O，R 7 COO和N（R 8）2，其中R 7是（C 1 -C 6）烷基或（C 6 -C 10）芳基，并且每个R 8选自氢和 R7，条件是当R1为R7O时，R7不是甲基。

公开(公告)号：US5243038A

公开(公告)日：1993-09-07

申请号：US114618

申请日：1987-10-29

Applicant: Franco A. Ferrari ,  Charles Richardson ,  James Chambers ,  Stuart C. Causey ,  Thomas J. Pollock ,  Joseph Capello ,  John W. Crissman

Inventor： Franco A. Ferrari ,  Charles Richardson ,  James Chambers ,  Stuart C. Causey ,  Thomas J. Pollock ,  Joseph Capello ,  John W. Crissman

IPC: C07K14/435 ,  C07K14/78 ,  C12N1/06 ,  C12N15/11 ,  C12N15/62 ,  C12N15/70 ,  C12N15/75

CPC classification number: C07K14/78 ,  C07K14/43586 ,  C12N1/06 ,  C12N15/11 ,  C12N15/62 ,  C12N15/70 ,  C12N15/75 ,  C07K2319/00 ,  C07K2319/02 ,  C07K2319/61

Abstract: Methods are provided for the production of large polypeptides containing repeating sequences of amino acids utilizing biochemical techniques, specifically DNA sequences coding for the expression of the large polypeptides. Systems utilizing exogenous transcriptional and translational regions to control the production of the large polypeptides are also provided.

Abstract translation: 提供了使用生化技术生产含有氨基酸重复序列的大多肽的方法，特别是编码大多肽表达的DNA序列。 还提供了利用外源转录和翻译区以控制大多肽的产生的系统。