公开(公告)号：US20090188624A1

公开(公告)日：2009-07-30

申请号：US12020043

申请日：2008-01-25

Applicant: KALLOL BERA ,  James D. Carducci ,  Ajit Balakrishna ,  Shahid Rauf ,  Kenneth S. Collins ,  Andrew Nguyen ,  Hamid Noorbakhsh

Inventor： KALLOL BERA ,  James D. Carducci ,  Ajit Balakrishna ,  Shahid Rauf ,  Kenneth S. Collins ,  Andrew Nguyen ,  Hamid Noorbakhsh

IPC: H01L21/306

CPC classification number: H01J37/32834 ,  C23C16/4412 ,  H01L21/67017 ,  H01L21/67167 ,  H01L21/6719

Abstract: Methods and apparatus for processing substrates are provided herein. In some embodiments, an apparatus for processing a substrate may include a process chamber having an inner volume and an exhaust system coupled thereto, wherein the exhaust system includes a plurality of first conduits, each first conduit having an inlet adapted to receive exhaust from the inner volume of the process chamber. A pumping plenum is coupled to each of the plurality of first conduits. The pumping plenum has a pumping port adapted to pump the exhaust from the chamber. The conductance between each inlet of the plurality of first conduits and the pumping port is substantially equivalent.

Abstract translation: 本文提供了处理衬底的方法和装置。 在一些实施例中，用于处理衬底的设备可以包括具有与其相连的内部体积和排气系统的处理室，其中排气系统包括多个第一管道，每个第一管道具有适于从内部 处理室的体积。 泵送气室连接到多个第一管道中的每一个。 泵送气室具有适于泵送来自腔室的排气的泵送口。 多个第一导管的每个入口与泵送端口之间的电导基本相当。

公开(公告)号：US20090178763A1

公开(公告)日：2009-07-16

申请号：US12345821

申请日：2008-12-30

Applicant: James D. Carducci ,  Olga Regelman

Inventor： James D. Carducci ,  Olga Regelman

IPC: H01L21/306

CPC classification number: H01J37/32633 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32477

Abstract: The present invention generally comprises a showerhead insulator for electrically isolating a showerhead assembly from a processing chamber wall, a chamber liner assembly for lining a processing chamber, a lower chamber liner for lining an evacuation area of a processing chamber, and a flow equalizer for ensuring a uniform evacuation of a processing chamber. When processing a substrate within an etching chamber, the showerhead needs to be electrically isolated from ground. A showerhead insulator may insulate the showerhead from ground while also preventing plasma from entering the volume that it occupies. A chamber liner may protect the chamber walls from contamination and reduce chamber cleaning. A flow equalizer will permit processing gases to be evenly pulled into the evacuation channel rather than a disproportionate flow into the evacuation channel. A lower liner can aid in uniformly drawing the vacuum and protecting the chamber walls from contamination.

Abstract translation: 本发明通常包括用于将喷头组件与处理室壁电隔离的喷头绝缘体，用于衬里处理室的腔室衬套组件，用于衬里处理室的抽空区域的下室衬套和用于确保 均匀排出处理室。 当在蚀刻室内处理衬底时，喷头需要与地电隔离。 喷头绝缘体可以将喷头与地面隔离，同时也防止等离子体进入其占据的体积。 腔室衬垫可以保护腔室壁免受污染并减少腔室清洁。 流量均衡器将允许将处理气体均匀地拉入抽空通道，而不是不成比例的流入排气通道。 下层衬垫有助于均匀地抽真空并保护室壁免受污染。

公开(公告)号：US07147719B2

公开(公告)日：2006-12-12

申请号：US10602491

申请日：2003-06-23

Applicant: Michael D. Welch ,  Homgqing Shan ,  Paul E. Luscher ,  Evans Y. Lee ,  James D. Carducci ,  Siamak Salimian

Inventor： Michael D. Welch ,  Homgqing Shan ,  Paul E. Luscher ,  Evans Y. Lee ,  James D. Carducci ,  Siamak Salimian

IPC: H01L21/00 ,  C23C16/00

CPC classification number: H01L21/67011 ,  H01J37/32458 ,  H01J2237/186 ,  Y10S156/916 ,  Y10S414/139

Abstract: In a substrate vacuum processing chamber, a second inner slit passage door apparatus and method to supplement the normal slit valve and its door at the outside of the chamber. The inner slit passage door, blocks the slit passage at or adjacent the substrate processing location in a vacuum processing chamber to prevent process byproducts from depositing on the inner surfaces of the slit passage beyond the slit passage door and improves the uniformity of plasma in the processing chamber by eliminating a large cavity adjacent to the substrate processing location into which the plasma would otherwise expand. The inner slit passage door is configured and positioned in such a way as to avoid generating particles from the opening and closing motion of the second slit valve door, as it does not rub against any element of the chamber during its motion and the inner slit passage door is positioned with a predetermined gap from adjacent pieces and the door configuration includes beveled surfaces to further reduce the chance for particle generation, even when there is deposition of process byproducts on the door and its adjacent surfaces.

公开(公告)号：US06192827B1

公开(公告)日：2001-02-27

申请号：US09111251

申请日：1998-07-03

Applicant: Michael D. Welch ,  Homgqing Shan ,  Paul E. Luscher ,  Evans Y. Lee ,  James D. Carducci ,  Siamak Salimian

Inventor： Michael D. Welch ,  Homgqing Shan ,  Paul E. Luscher ,  Evans Y. Lee ,  James D. Carducci ,  Siamak Salimian

IPC: C23C1601

CPC classification number: H01L21/67011 ,  H01J37/32458 ,  H01J2237/186 ,  Y10S156/916 ,  Y10S414/139

Abstract: In a substrate vacuum processing chamber, a second inner slit passage door apparatus and method to supplement the normal slit valve and its door at the outside of the chamber. The inner slit passage door, blocks the slit passage at or adjacent the substrate processing location in a vacuum processing chamber to prevent process byproducts from depositing on the inner surfaces of the slit passage beyond the slit passage door and improves the uniformity of plasma in the processing chamber by eliminating a large cavity adjacent to the substrate processing location into which the plasma would otherwise expand. The inner slit passage door is configured and positioned in such a way as to avoid generating particles from the opening and closing motion of the second slit valve door, as it does not rub against any element of the chamber during its motion and the inner slit passage door is positioned with a predetermined gap from adjacent pieces and the door configuration includes beveled surfaces to further reduce the chance for particle generation, even when there is deposition of process byproducts on the door and its adjacent surfaces.

Abstract translation: 在基板真空处理室中，第二内狭缝通道门装置和方法，用于在室的外部补充普通狭缝阀及其门。 内部狭缝通道门在真空处理室中阻挡基板处理位置处或邻近的狭缝通道，以防止加工副产物沉积在狭缝通道的内表面上方超过狭缝通道门并改善处理中的等离子体的均匀性 通过消除与衬底处理位置相邻的大空腔，等离子体将在其中膨胀。 内狭缝通道门的构造和定位方式是避免从第二狭缝阀门的打开和关闭运动产生颗粒，因为它在其运动期间不会摩擦室内的任何元件，并且内部狭缝通道 门与相邻的件之间具有预定的间隙定位，并且门配置包括斜面以进一步减少颗粒产生的机会，即使在门及其相邻表面上沉积了工艺副产物。

公开(公告)号：US20180308664A1

公开(公告)日：2018-10-25

申请号：US15960382

申请日：2018-04-23

Applicant: Kenneth S. Collins ,  Kartik Ramaswamy ,  Yue Guo ,  Shahid Rauf ,  Kallol Bera ,  James D. Carducci ,  Michael R. Rice

Inventor： Kenneth S. Collins ,  Kartik Ramaswamy ,  Yue Guo ,  Shahid Rauf ,  Kallol Bera ,  James D. Carducci ,  Michael R. Rice

IPC: H01J37/32 ,  C23C16/455

CPC classification number: H01J37/32183 ,  C23C16/4554 ,  H01J37/32091 ,  H01J37/321 ,  H01J37/32449 ,  H01J37/32541 ,  H01J37/32568 ,  H01J37/32715 ,  H01J2237/1825 ,  H01J2237/3321 ,  H01J2237/3323 ,  H01J2237/334 ,  H01L21/67069 ,  H01L21/6831

Abstract: A plasma reactor includes a chamber body having an interior space that provides a plasma chamber, a gas distributor to deliver a processing gas to the plasma chamber, a pump coupled to the plasma chamber to evacuate the chamber, a workpiece support to hold a workpiece, and an intra-chamber electrode assembly including a plurality of filaments extending laterally through the plasma chamber between a ceiling of the plasma chamber and the workpiece support. At least one bus is electrically connected to a conductor of each filament. An RF power source is configured to apply a first RF signal of a first frequency to the plurality of filaments at a first location on at least one bus, and to apply a second RF signal of different second frequency to the plurality of filaments at a different second location on the at least one bus.

公开(公告)号：US08652297B2

公开(公告)日：2014-02-18

申请号：US13050481

申请日：2011-03-17

Applicant: Kenneth S. Collins ,  Zhigang Chen ,  Kartik Ramaswamy ,  James D. Carducci ,  Shahid Rauf ,  Andrew Nguyen

Inventor： Kenneth S. Collins ,  Zhigang Chen ,  Kartik Ramaswamy ,  James D. Carducci ,  Shahid Rauf ,  Andrew Nguyen

IPC: C23C16/00 ,  C23F1/00 ,  H01L21/306 ,  H01J7/24 ,  H05B31/26

CPC classification number: H01J37/32091 ,  H01J37/32577 ,  H05H1/46 ,  H05H2001/4622

Abstract: A coaxial VHF power coupler includes conductive element inside a hollow cylindrical outer conductor of the power coupler and surrounding an axial section of a hollow cylindrical inner conductor of the power coupler. Respective plural motor drives contacting the hollow cylindrical outer conductor are connected to respective locations of the movable conductive element.

Abstract translation: 同轴VHF功率耦合器包括在功率耦合器的中空圆柱形外导体内的导电元件，并且包围功率耦合器的中空圆柱形内导体的轴向部分。 与中空圆柱形外部导体接触的多个电机驱动器连接到可移动导电元件的相应位置。

公开(公告)号：US20130008604A1

公开(公告)日：2013-01-10

申请号：US13613941

申请日：2012-09-13

Applicant: KALLOL BERA ,  JAMES D. CARDUCCI ,  AJIT BALAKRISHNA ,  SHAHID RAUF ,  KENNETH S. COLLINS ,  ANDREW NGUYEN ,  HAMID NOORBAKHSH

Inventor： KALLOL BERA ,  JAMES D. CARDUCCI ,  AJIT BALAKRISHNA ,  SHAHID RAUF ,  KENNETH S. COLLINS ,  ANDREW NGUYEN ,  HAMID NOORBAKHSH

IPC: H01L21/306

CPC classification number: H01J37/32834 ,  C23C16/4412 ,  H01L21/67017 ,  H01L21/67167 ,  H01L21/6719

Abstract: Methods and apparatus for processing substrates are provided herein. In some embodiments, an apparatus for processing a substrate may include a process chamber having an inner volume and an exhaust system coupled thereto, wherein the exhaust system includes a plurality of first conduits, each first conduit having an inlet adapted to receive exhaust from the inner volume of the process chamber. A pumping plenum is coupled to each of the plurality of first conduits. The pumping plenum has a pumping port adapted to pump the exhaust from the chamber. The conductance between each inlet of the plurality of first conduits and the pumping port is substantially equivalent.

公开(公告)号：US20120325406A1

公开(公告)日：2012-12-27

申请号：US13607425

申请日：2012-09-07

Applicant: James D. CARDUCCI ,  Andrew NGUYEN ,  Ajit BALAKRISHNA ,  Michael C. KUTNEY

Inventor： James D. CARDUCCI ,  Andrew NGUYEN ,  Ajit BALAKRISHNA ,  Michael C. KUTNEY

IPC: B32B1/04 ,  H05H1/24 ,  B44C1/22

CPC classification number: H01L21/67069 ,  H01J37/32082 ,  H01J37/32495 ,  H01J37/32623 ,  Y10T428/13

Abstract: A plasma processing chamber has a lower liner with an integrated flow equalizer. In an etching process, the processing gases may be unevenly drawn from the processing chamber which may cause an uneven etching of the substrate. The integrated flow equalizer is configured to equalize the flow of the processing gases evacuated from the chamber via the lower liner.

Abstract translation: 等离子体处理室具有具有集成流量均衡器的下衬套。 在蚀刻工艺中，处理气体可能不均匀地从处理室抽出，这可能导致基板的不均匀蚀刻。 集成流量均衡器被配置为使从腔室经由下衬套排出的处理气体的流量相等。

公开(公告)号：US08282736B2

公开(公告)日：2012-10-09

申请号：US13401572

申请日：2012-02-21

Applicant: James D. Carducci ,  Andrew Nguyen ,  Ajit Balakrishna ,  Michael C. Kutney

Inventor： James D. Carducci ,  Andrew Nguyen ,  Ajit Balakrishna ,  Michael C. Kutney

IPC: C23C16/455 ,  C23C16/52 ,  C23C16/06 ,  C23C16/22

CPC classification number: H01L21/67069 ,  H01J37/32082 ,  H01J37/32495 ,  H01J37/32623 ,  Y10T428/13

Abstract: A plasma processing chamber has a lower liner with an integrated flow equalizer. In an etching process, the processing gases may be unevenly drawn from the processing chamber which may cause an uneven etching of the substrate. The integrated flow equalizer is configured to equalize the flow of the processing gases evacuated from the chamber via the lower liner.

Abstract translation: 等离子体处理室具有具有集成流量均衡器的下衬套。 在蚀刻工艺中，处理气体可能不均匀地从处理室抽出，这可能导致基板的不均匀蚀刻。 集成流量均衡器被配置为使从腔室经由下衬套排出的处理气体的流量相等。

公开(公告)号：US08123902B2

公开(公告)日：2012-02-28

申请号：US11689031

申请日：2007-03-21

Applicant: Paul Brillhart ,  Daniel J. Hoffman ,  James D. Carducci ,  Xiaoping Zhou ,  Matthew L. Miller

Inventor： Paul Brillhart ,  Daniel J. Hoffman ,  James D. Carducci ,  Xiaoping Zhou ,  Matthew L. Miller

IPC: C23C16/00 ,  H01L21/306

CPC classification number: C23C16/45565 ,  C23C16/45502 ,  H01J37/3244 ,  H01J37/32449 ,  H01L21/67069 ,  Y10T137/85938

Abstract: A method and apparatus for providing flow into a processing chamber are provided. In one embodiment, a vacuum processing chamber is provided that includes a chamber body having an interior volume, a substrate support disposed in the interior volume and a gas distribution assembly having an asymmetrical distribution of gas injection ports. In another embodiment, a method for vacuum processing a substrate is provided that includes disposing a substrate on a substrate support within in a processing chamber, flowing process gas into laterally into a space defined above a gas distribution plate positioned in the processing chamber over the substrate, and processing the substrate in the presence of the processing gas.

Abstract translation: 提供了一种用于提供流入处理室的方法和装置。 在一个实施例中，提供真空处理室，其包括具有内部容积的室主体，设置在内部容积中的基板支撑件和具有气体注入端口的不对称分布的气体分配组件。 在另一个实施例中，提供了一种用于真空处理基板的方法，其包括将基板设置在处理室内的基板支撑件上，使处理气体横向流入位于位于处理室中的位于基板上的气体分配板上方的空间 在处理气体的存在下处理基板。