Abstract:
The present teachings provide a fuser member. The fuser member includes a substrate layer comprising a polyimide polymer and polyethylene glycol ester.
Abstract:
There is disclosed a method for reconditioning an intermediate transfer member and the reconditioned intermediate transfer member. The method comprises stripping off an outer layer of the intermediate transfer member. A mixture of a polymer, conductive particles and a solvent is coated over the outer surface of a seamless intermediate transfer member. The mixture is heated to form a layer on the outer surface of the intermediate transfer belt. An apparatus for reconditioning an intermediate transfer member is also described.
Abstract:
A photoconductor that includes a photogenerating layer and a charge transport layer containing a charge transport component, a fluorinated polymer, and a core shell component, and wherein the core is comprised of a metal oxide and the shell is comprised of silica.
Abstract:
A photoconductor that includes, for example, a supporting substrate, an undercoat layer thereover wherein the undercoat layer contains a metal oxide, a phenolic resin, and a phosphate; a photogenerating layer; and at least one charge transport layer.
Abstract:
There is disclosed an intermediate transfer member that includes a layer of a poly(imide-carbonate) copolymer having dispersed therein conductive particles. The layer can be a surface layer.
Abstract:
An intermediate transfer media, such as a belt, that includes a polymer blend of a polymethacrylimide and a polysulfone, a polymethacrylimide and a polyphenylsulfone, or a polymethacrylimide and a polyethersulfone and optionally a conductive component.
Abstract:
A method for providing a stacked wafer configuration is provided. The method includes bonding a first wafer to a second wafer. A filler material is applied in a gap formed along edges of the first wafer and the second wafer. The filler material provides support along the edges during a thinning and transportation process to help reduce cracking or chipping. The filler material may be cured to reduce any bubbling that may have occurred while applying the filler material. Thereafter, the second wafer may be thinned by grinding, plasma etching, wet etching, or the like. In some embodiments of the present invention, this process may be repeated multiple times to create a stacked wafer configuration having three or more stacked wafers.
Abstract:
A semiconductor structure includes a first die comprising a first substrate and a first bonding pad over the first substrate, a second die having a first surface and a second surface opposite the first surface, wherein the second die is stacked on the first die and a protection layer having a vertical portion on a sidewall of the second die, and a horizontal portion extending over the first die.
Abstract:
The present disclosure provides a series of compounds of the formula (I) which modulate β-amyloid peptide (β-AP) production and are useful in the treatment of Alzheimer's Disease and other conditions affected by β-amyloid peptide (β-AP) production.