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    METHODS AND APPARATUS FOR CONTROLLING PHOTORESIST LINE WIDTH ROUGHNESS WITH ENHANCED ELECTRON SPIN CONTROL
    43.
    发明申请
    METHODS AND APPARATUS FOR CONTROLLING PHOTORESIST LINE WIDTH ROUGHNESS WITH ENHANCED ELECTRON SPIN CONTROL 审中-公开
    用于控制光电子束宽度粗糙度的方法和装置，具有增强的电子旋转控制

    公开(公告)号：US20120318773A1

    公开(公告)日：2012-12-20

    申请号：US13455753

    申请日：2012-04-25

    Applicant: Banqiu Wu ,  Ajay Kumar ,  Kartik Ramaswamy ,  Omkaram Nalamasu

    Inventor： Banqiu Wu ,  Ajay Kumar ,  Kartik Ramaswamy ,  Omkaram Nalamasu

    IPC: B44C1/22 ,  B05C13/00

    CPC classification number: H01J37/32669 ,  H01J37/32009 ,  H01J37/32422 ,  H01J37/3244 ,  H01L21/0273 ,  H01L21/31144

    Abstract: The present invention provides methods and an apparatus for controlling and modifying line width roughness (LWR) of a photoresist layer with enhanced electron spinning control. In one embodiment, an apparatus for controlling a line width roughness of a photoresist layer disposed on a substrate includes a processing chamber having a chamber body having a top wall, side wall and a bottom wall defining an interior processing region, a support pedestal disposed in the interior processing region of the processing chamber, and a plasma generator source disposed in the processing chamber operable to provide predominantly an electron beam source to the interior processing region.

    Abstract translation: 本发明提供了通过增强的电子纺丝控制来控制和修改光致抗蚀剂层的线宽粗糙度（LWR）的方法和装置。 在一个实施例中，用于控制设置在基板上的光致抗蚀剂层的线宽粗糙度的装置包括处理室，该处理室具有室主体，该室主体具有限定内部处理区域的顶壁，侧壁和底壁， 处理室的内部处理区域和设置在处理室中的等离子体发生器源，其可操作以主要向内部处理区域提供电子束源。

    MAGNETIC NANOWIRES FOR TCO REPLACEMENT
    49.
    发明申请
    MAGNETIC NANOWIRES FOR TCO REPLACEMENT 审中-公开
    用于替代TCO的磁性纳米颗粒

    公开(公告)号：US20100101829A1

    公开(公告)日：2010-04-29

    申请号：US12258263

    申请日：2008-10-24

    Applicant: Steven VERHAVERBEKE ,  Omkaram Nalamasu ,  Nety M. Krishna

    Inventor： Steven VERHAVERBEKE ,  Omkaram Nalamasu ,  Nety M. Krishna

    IPC: H01B5/00 ,  H05K3/10

    CPC classification number: H01L31/022425 ,  G02F1/13439 ,  H01B1/02 ,  H01B1/08 ,  H01L31/022475 ,  H01L31/022483 ,  H01L31/1884 ,  H05K1/097 ,  Y02E10/50 ,  Y10T29/49155

    Abstract: This invention provides an optically transparent conductive layer with a desirable combination of low electrical sheet resistance and good optical transparency. The conductive layer comprises a multiplicity of magnetic nanowires in a plane, the nanowires being aligned roughly (1) parallel to each other and (2) with the long axes of the nanowires in the plane of the layer, the nanowires further being configured to provide a plurality of continuous conductive pathways, and wherein the density of the multiplicity of magnetic nanowires allows for substantial optical transparency of the conductive layer. Furthermore, the conductive layer can include an optically transparent continuous conductive film, wherein the multiplicity of magnetic nanowires are electrically connected to the continuous conductive film. A method of forming the conductive layer on a substrate includes: depositing a multiplicity of magnetic conductive nanowires on the substrate and applying a magnetic field to form the nanowires into a plurality of conductive pathways parallel to the surface of the substrate.

    Abstract translation: 本发明提供了具有低电薄片电阻和良好的光学透明度的期望组合的光学透明导电层。 导电层在平面中包括多个磁性纳米线，纳米线大致（1）彼此平行对准，（2）与该层的平面中的纳米线的长轴对准，纳米线还被配置成提供 多个连续导电路径，并且其中多个磁性纳米线的密度允许导电层的实质的光学透明度。 此外，导电层可以包括光学透明的连续导电膜，其中多个磁性纳米线电连接到连续导电膜。 在衬底上形成导电层的方法包括：在衬底上沉积多个导电纳米线并施加磁场以形成平行于衬底表面的多个导电通路中的纳米线。

    CARBON NANOTUBE-BASED GAS VALVE
    50.
    发明申请
    CARBON NANOTUBE-BASED GAS VALVE 有权
    碳纳米管气阀

    公开(公告)号：US20100051843A1

    公开(公告)日：2010-03-04

    申请号：US12201282

    申请日：2008-08-29

    Applicant: VICTOR L. PUSHPARAJ ,  Omkaram Nalamasu

    Inventor： VICTOR L. PUSHPARAJ ,  Omkaram Nalamasu

    IPC: F16K31/02

    CPC classification number: F16K51/02 ,  F16K13/00 ,  Y10T137/86718

    Abstract: Precise control over gas delivery is achieved at the micro and nanobar mass levels by incorporating blocks of aligned carbon nanotubes into valves and finely adjusting the flow through the block by controlling a compressing force applied to the block. A valve for controlling gas flow includes: a valve housing; a block of aligned carbon nanotubes, the block and the valve housing being configured to direct the gas through the carbon nanotubes in the block; and a device configured to apply a force to the block in order to compress the block, wherein the block is compressed perpendicular to the walls of the carbon nanotubes in the block; whereby the application of the force to the walls restricts the flow of the gas through the valve. The valve may further comprise an electrical device for monitoring the electrical properties of the carbon nanotube block. This monitoring provides information on the state of compression of the carbon nanotube block and/or the gas that is flowing through the valve.

    Abstract translation: 通过将对准的碳纳米管块嵌入阀中并通过控制施加到块的压缩力来精细调节通过块的流动，在微量和纳米级质量水平下实现对气体输送的精确控制。 用于控制气流的阀包括：阀壳; 对准的碳纳米管块，所述块和所述阀壳体构造成引导所述气体通过所述块中的所述碳纳米管; 以及被配置为向所述块施加力以便压缩所述块的装置，其中所述块垂直于所述块中的所述碳纳米管的壁被压缩; 从而将力施加到壁限制了气体通过阀的流动。 阀还可以包括用于监测碳纳米管块的电性能的电气装置。 该监测提供关于碳纳米管块和/或流过阀的气体的压缩状态的信息。

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