公开(公告)号：US20090146132A1

公开(公告)日：2009-06-11

申请号：US12188698

申请日：2008-08-08

Applicant: Soo Min LEE ,  Hee Seok Park ,  Jae Woong Han ,  Seong Suk Lee ,  Cheol Soo Sone

Inventor： Soo Min LEE ,  Hee Seok Park ,  Jae Woong Han ,  Seong Suk Lee ,  Cheol Soo Sone

IPC: H01L33/00

CPC classification number: H01L33/32 ,  B82Y10/00 ,  B82Y20/00 ,  H01L33/06

Abstract: There is provided a nitride semiconductor device including: an n-type nitride semiconductor layer; a p-type nitride semiconductor layer; and an active layer formed between the n-type and p-type nitride semiconductor layers, the active layer including a plurality of quantum well layers and at least one quantum barrier layer deposited alternately with each other, wherein the active layer includes a first quantum well layer, a second quantum well layer formed adjacent to the first quantum well layer toward the p-type nitride semiconductor layer and having a quantum level higher than a quantum level of the first quantum well layer, and a tunneling quantum barrier layer formed between the first and second quantum well layers and having a thickness enabling a carrier to be tunneled therethrough.

Abstract translation: 提供了一种氮化物半导体器件，包括：n型氮化物半导体层; p型氮化物半导体层; 以及形成在所述n型和p型氮化物半导体层之间的有源层，所述有源层包括彼此交替沉积的多个量子阱层和至少一个量子势垒层，其中所述有源层包括第一量子阱 层，与第一量子阱层相邻形成朝向p型氮化物半导体层并且具有高于第一量子阱层的量子级的量子级的第二量子阱层，以及形成在第一量子阱层之间的隧穿量子势垒层 和第二量子阱层，并且具有能够使载体穿过其的厚度。

公开(公告)号：US07348200B2

公开(公告)日：2008-03-25

申请号：US11368184

申请日：2006-03-03

Applicant: Soo Min Lee ,  Rak Jun Choi ,  Naoi Yoshiki ,  Sakai Shiro ,  Masayoshi Koike

Inventor： Soo Min Lee ,  Rak Jun Choi ,  Naoi Yoshiki ,  Sakai Shiro ,  Masayoshi Koike

IPC: H01L21/00

CPC classification number: C30B29/406 ,  C30B25/02 ,  C30B25/18 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02609 ,  H01L21/0262

Abstract: The invention provides a method of growing a non-polar a-plane gallium nitride. In the method, first, an r-plane substrate is prepared. Then, a low-temperature nitride-based nucleation layer is deposited on the substrate. Finally, the non-polar a-plane gallium nitride is grown on the nucleation layer. In growing the non-polar a-plane gallium nitride, a gallium source is supplied at a flow rate of about 190 to 390 μmol/min and the flow rate of a nitrogen source is set to produce a V/III ratio of about 770 to 2310.

Abstract translation: 本发明提供一种生长非极性a-平面氮化镓的方法。 在该方法中，首先，准备r面基板。 然后，在基板上沉积低温氮化物基成核层。 最后，在成核层上生长非极性a面平面氮化镓。 在生长非极性a面平面氮化镓的过程中，以约190〜390微摩尔/分钟的流量供给镓源，将氮源的流量设定为产生约770〜 2310。

公开(公告)号：US20070029251A1

公开(公告)日：2007-02-08

申请号：US11338247

申请日：2006-01-24

Applicant: Kew-Ho Lee ,  In-Chul Kim ,  Soo-Min Lee ,  In-Hwan Choi

Inventor： Kew-Ho Lee ,  In-Chul Kim ,  Soo-Min Lee ,  In-Hwan Choi

IPC: B01D71/06

CPC classification number: B22F3/1103 ,  B01D67/0041 ,  B01D67/0058 ,  B01D71/022 ,  B01D2323/34 ,  B22F2998/10 ,  B22F2999/00 ,  C02F1/444 ,  Y10T428/169 ,  B22F1/0059 ,  B22F1/0085 ,  B22F2202/11

Abstract: The present invention relates to a method for preparing a metallic membrane, more particularly to a method for preparing metallic membranes, which comprises dissolving a transition metal of Period 3 and its alloy particle powder and synthetic polymer in a fixed ratio; radiating or casting to prepare a membrane precursor; oxidizing the synthetic polymer on the membrane precursor under a mixed gaseous atmosphere of nitrogen and hydrogen; and sintering the membrane precursor at a predetermined temperature. The metallic membrane prepared by the process of the present invention has excellent mechanical and chemical properties and enables to maintain a relatively small pore size and high porocity than traditional membranes. Therefore, it is useful for water treatment.

Abstract translation: 本发明涉及一种制备金属膜的方法，更具体地涉及一种制备金属膜的方法，其包括以固定比例溶解周期3的过渡金属及其合金颗粒粉末和合成聚合物; 辐射或铸造以制备膜前体; 在氮和氢的混合气体气氛下氧化膜前体上的合成聚合物; 并在预定温度下烧结膜前体。 通过本发明的方法制备的金属膜具有优异的机械和化学性质，并且能够保持比传统膜更小的孔径和高的孔隙率。 因此，它对于水处理是有用的。

公开(公告)号：US07091055B2

公开(公告)日：2006-08-15

申请号：US11087680

申请日：2005-03-24

Applicant: Hun Joo Hahm ,  In Eung Kim ,  Jeong Seok Na ,  Seung Jin Yoo ,  Young Ho Park ,  Soo Min Lee

Inventor： Hun Joo Hahm ,  In Eung Kim ,  Jeong Seok Na ,  Seung Jin Yoo ,  Young Ho Park ,  Soo Min Lee

IPC: H01L21/00

CPC classification number: H01L27/15 ,  H01L25/0753 ,  H01L27/153 ,  H01L33/44 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/49107 ,  Y10S257/918 ,  H01L2924/00014

Abstract: Disclosed are a white light emitting diode and a method for manufacturing the white light emitting diode. The white light emitting diode comprises a conductive substrate with a light transmitting property having a surface divided into first and second areas; a first emitting unit including a first clad layer, a first active area, and a second clad layer at the first area of the conductive substrate; a second emitting unit including a third clad layer, a second active area emitting light with a wavelength to be combined with light emitted from the first active area into white light, and a fourth clad layer at the second area of the conductive substrate; and first, second and third electrodes, the first electrode connected to the second surface of the conductive substrate, the second electrode connected to the second clad layer, and the third electrode connected to the fourth clad layer.

Abstract translation: 公开了一种白色发光二极管及其制造方法。 白色发光二极管包括具有透光性的导电性基板，其表面被划分为第一和第二区域; 第一发光单元，其包括在导电基板的第一区域处的第一覆盖层，第一有源区和第二覆盖层; 第二发光单元，包括第三覆盖层，将具有与从第一有源区域发射的光合成的波长的光发射到白光的第二有源区，以及在导电基板的第二区域处的第四覆盖层; 以及第一，第二和第三电极，连接到导电衬底的第二表面的第一电极，连接到第二覆盖层的第二电极和连接到第四覆盖层的第三电极。

公开(公告)号：US06337494B1

公开(公告)日：2002-01-08

申请号：US09137709

申请日：1998-08-21

Applicant: Byung Ryul Ryum ,  Deok Ho Cho ,  Tae Hyeon Han ,  Soo Min Lee

Inventor： Byung Ryul Ryum ,  Deok Ho Cho ,  Tae Hyeon Han ,  Soo Min Lee

IPC: H01L310328

CPC classification number: H01L29/1602 ,  H01L29/16 ,  H01L29/66242 ,  H01L29/66287 ,  H01L29/732 ,  H01L29/7378

Abstract: Disclosed is a super self-aligned heterojunction bipolar transistor which is capable of miniaturizing an element, simplifying the process step thereof without using a trench isolation process and a sophisticated selective epitaxial growth (SEG) processes. According to this invention, the sophisticated isolation and the SEG techniques are derived by using simple and popular processes. The base layer has multi-layer structure being made of a Si, an undoped SiGe, a SiGe doped a p-type impurity in-situ and Si. Also, the selective epitaxial growth is not required. Thus, it can be less prone to a flow of leakage current or an emitter-base-collector short effect.

Abstract translation: 公开了能够使元件小型化的超自对准异质结双极晶体管，简化了其工艺步骤，而不使用沟槽隔离工艺和复杂的选择性外延生长（SEG）工艺。 根据本发明，通过使用简单和流行的方法得到复杂的隔离和SEG技术。 基层具有由Si，未掺杂的SiGe，SiGe原位掺杂p型杂质的Si和Si构成的多层结构。 此外，不需要选择性外延生长。 因此，可能不太容易发生漏电流或发射极 - 基极 - 集电极短路效应。

公开(公告)号：US5990335A

公开(公告)日：1999-11-23

申请号：US4300

申请日：1998-01-08

Applicant: Hwan-kyu Kim ,  Soo-min Lee ,  Mi-kyung Ryu ,  Ki-dong Kim

Inventor： Hwan-kyu Kim ,  Soo-min Lee ,  Mi-kyung Ryu ,  Ki-dong Kim

IPC: C07F7/08 ,  C07F7/10 ,  C07F7/12 ,  C08G77/60 ,  C09K11/06

CPC classification number: C09K11/06 ,  C07F7/0818 ,  C08G77/60

Abstract: A di-p-tolyldialkylsilane derivative, a photoluminescence polymer formed from the derivative, and methods for preparing the derivative and polymer are provided. The di-p-tolyldialkylsilane derivative is represented by the following formula (1): ##STR1## where R.sub.1 and R.sub.2 are independently selected from the group consisting of phenyl and --(CH.dbd.CH).sub.k R.sub.3 (k is an integer between and inclusive of 0 and 2, and R.sub.3 is hydrogen or alkyl), and X.sup.2 is selected from the group consisting of hydrogen, halogen atom and cyano group. The di-p-tolylalkylsilane derivative of the formula (1) is very useful as a monomer of a functional polymer. The photoluminescence polymer formed from the di-p-tolylalkylsilane derivative of the chemical formula (1) contains a repeating unit having a silicon between the conjugated double bonds, thereby suppressing electron movement of the conjugated double bond. As a result, a range of colors between blue and green, particularly, blue, can be obtained. Also, when the photoluminescence polymer is adopted as a color-developing substance, the threshold voltage characteristics are improved.

Abstract translation: 提供二对甲苯基二烷基硅烷衍生物，由该衍生物形成的光致发光聚合物，以及制备衍生物和聚合物的方法。 二对甲苯基二烷基硅烷衍生物由下式（1）表示：其中R 1和R 2独立地选自苯基和 - （CH = CH）k R 3（k是0和2之间的整数，包括0和2 ，R 3为氢或烷基），X 2选自氢，卤素原子和氰基。 式（1）的二对甲苯基烷基硅烷衍生物作为官能聚合物的单体是非常有用的。 由化学式（1）的二对甲苯基烷基硅烷衍生物形成的光致发光聚合物含有在共轭双键之间具有硅的重复单元，从而抑制共轭双键的电子移动。 结果，可以获得蓝色和绿色之间的颜色范围，特别是蓝色。 此外，当采用光致发光聚合物作为显色物质时，阈值电压特性得到改善。

公开(公告)号：US5798277A

公开(公告)日：1998-08-25

申请号：US729841

申请日：1996-10-15

Applicant: Byung-Ryul Ryum ,  Tae-Hyeon Han ,  Deok-Ho Cho ,  Soo-Min Lee ,  Kwang-Eui Pyun

Inventor： Byung-Ryul Ryum ,  Tae-Hyeon Han ,  Deok-Ho Cho ,  Soo-Min Lee ,  Kwang-Eui Pyun

IPC: H01L29/70 ,  H01L21/331 ,  H01L29/08 ,  H01L29/737 ,  H01L21/265

CPC classification number: H01L29/66242 ,  H01L29/0821 ,  H01L29/7371 ,  Y10S148/05 ,  Y10S148/072

Abstract: An improved method for fabricating a heterojunction bipolar transistor which includes the steps of forming a buried collector, a collector thin film, and a collector sinker on a semiconductor substrate in order, forming a first silicon oxide film, a base electrode polysilicon layer, a nitride film, and an oxidation film on a resulting substrate exposing the first silicon oxidation film, forming a spacer insulation film at the lateral side of the exposed region, and defining an activation region, exposing the collector thin film of the activation region using a mask, and forming an auxiliary lateral film for an isolation of the device, forming a selective collector region by ion-implantating a dopant to the activation region which is limited by the auxiliary lateral film, removing the auxiliary lateral film, etching the exposed portion in an anisotropic etching method, and forming a shallow trench for a device isolation, forming a polysilicon lateral film to have a height which is the same as the height of the base electrode polysilicon layer on the shallow trench, and forming a self-aligned base.

Abstract translation: 一种用于制造异质结双极晶体管的改进方法，其包括以下步骤：在半导体衬底上形成掩埋集电极，集电极薄膜和集电极沉降片，以形成第一氧化硅膜，基极多晶硅层，氮化物 在所得到的基板上暴露第一硅氧化膜的氧化膜，在暴露区域的侧面形成间隔绝缘膜，并限定激活区域，使用掩模曝光激活区域的集电极薄膜， 并形成用于隔离器件的辅助横向膜，通过将离子注入到由辅助侧膜限制的活化区域的掺杂剂形成选择性集电极区域，去除辅助横向膜，在各向异性层中蚀刻暴露部分 蚀刻方法，以及形成用于器件隔离的浅沟槽，形成多晶硅侧膜以具有s的高度 ame作为浅沟槽上的基极多晶硅层的高度，并形成自对准基底。

公开(公告)号：US07923716B2

公开(公告)日：2011-04-12

申请号：US12188698

申请日：2008-08-08

Applicant: Soo Min Lee ,  Hee Seok Park ,  Jae Woong Han ,  Seong Suk Lee ,  Cheol Soo Sone

Inventor： Soo Min Lee ,  Hee Seok Park ,  Jae Woong Han ,  Seong Suk Lee ,  Cheol Soo Sone

IPC: H01L31/00

CPC classification number: H01L33/32 ,  B82Y10/00 ,  B82Y20/00 ,  H01L33/06

Abstract: There is provided a nitride semiconductor device including: an n-type nitride semiconductor layer; a p-type nitride semiconductor layer; and an active layer formed between the n-type and p-type nitride semiconductor layers, the active layer including a plurality of quantum well layers and at least one quantum barrier layer deposited alternately with each other, wherein the active layer includes a first quantum well layer, a second quantum well layer formed adjacent to the first quantum well layer toward the p-type nitride semiconductor layer and having a quantum level higher than a quantum level of the first quantum well layer, and a tunneling quantum barrier layer formed between the first and second quantum well layers and having a thickness enabling a carrier to be tunneled therethrough.

Abstract translation: 提供了一种氮化物半导体器件，包括：n型氮化物半导体层; p型氮化物半导体层; 以及形成在所述n型和p型氮化物半导体层之间的有源层，所述有源层包括彼此交替沉积的多个量子阱层和至少一个量子势垒层，其中所述有源层包括第一量子阱 层，与第一量子阱层相邻形成朝向p型氮化物半导体层并且具有高于第一量子阱层的量子级的量子级的第二量子阱层，以及形成在第一量子阱层之间的隧穿量子势垒层 和第二量子阱层，并且具有能够使载体穿过其的厚度。

公开(公告)号：US20100105159A1

公开(公告)日：2010-04-29

申请号：US12648787

申请日：2009-12-29

Applicant: Cheol Kyu KIM ,  Yung Ho Ryu ,  Soo Min Lee ,  Jong In Yang ,  Tae Hyung Kim

Inventor： Cheol Kyu KIM ,  Yung Ho Ryu ,  Soo Min Lee ,  Jong In Yang ,  Tae Hyung Kim

IPC: H01L33/00 ,  C30B25/02

CPC classification number: H01L29/2003 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/0262 ,  H01L21/02664 ,  H01L33/0075

Abstract: A nitride semiconductor single crystal substrate, a manufacturing method thereof and a method for manufacturing a vertical nitride semiconductor device using the same. According to an aspect of the invention, in the nitride semiconductor single crystal substrate, upper and lower regions are divided along a thickness direction, the nitride single crystal substrate having a thickness of at least 100 μm. Here, the upper region has a doping concentration that is five times or greater than that of the lower region. Preferably, a top surface of the substrate in the upper region has Ga polarity. Also, according to a specific embodiment of the invention, the lower region is intentionally un-doped and the upper region is n-doped. Preferably, each of the upper and lower regions has a doping concentration substantially identical in a thickness direction.

Abstract translation: 氮化物半导体单晶衬底，其制造方法和使用其的垂直氮化物半导体器件的制造方法。 根据本发明的一个方面，在氮化物半导体单晶衬底中，沿着厚度方向分割上部和下部区域，所述氮化物单晶衬底的厚度至少为100μm。 这里，上部区域的掺杂浓度为下部区域的5倍以上。 优选地，上部区域中的基板的顶表面具有Ga极性。 此外，根据本发明的具体实施例，下部区域有意地未掺杂，并且上部区域是n掺杂的。 优选地，上部区域和下部区域中的每一个具有在厚度方向上基本相同的掺杂浓度。

公开(公告)号：US06914262B2

公开(公告)日：2005-07-05

申请号：US10689630

申请日：2003-10-22

Applicant: Hun Joo Hahm ,  In Eung Kim ,  Jeong Seok Na ,  Seung Jin Yoo ,  Young Ho Park ,  Soo Min Lee

Inventor： Hun Joo Hahm ,  In Eung Kim ,  Jeong Seok Na ,  Seung Jin Yoo ,  Young Ho Park ,  Soo Min Lee

IPC: H01L25/075 ,  H01L27/15 ,  H01L31/12 ,  H01L33/08 ,  H01L33/32 ,  H01L33/44 ,  H01L33/62

CPC classification number: H01L27/15 ,  H01L25/0753 ,  H01L27/153 ,  H01L33/44 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/49107 ,  Y10S257/918 ,  H01L2924/00014

Abstract: Disclosed are a white light emitting diode and a method for manufacturing the white light emitting diode. The white light emitting diode comprises a conductive substrate with a light transmitting property having a surface divided into first and second areas; a first emitting unit including a first clad layer, a first active area, and a second clad layer at the first area of the conductive substrate; a second emitting unit including a third clad layer, a second active area emitting light with a wavelength to be combined with light emitted from the first active area into white light, and a fourth clad layer at the second area of the conductive substrate; and first, second and third electrodes, the first electrode connected to the second surface of the conductive substrate, the second electrode connected to the second clad layer, and the third electrode connected to the fourth clad layer.