公开(公告)号：US20150104955A1

公开(公告)日：2015-04-16

申请号：US14515395

申请日：2014-10-15

Applicant: ASM IP HOLDING B.V.

Inventor： Viljami Pore

IPC: H01L21/02

CPC classification number: H01L21/0217 ,  C23C16/045 ,  C23C16/30 ,  C23C16/32 ,  C23C16/45523 ,  C23C16/45525 ,  H01L21/02112 ,  H01L21/02211 ,  H01L21/02271 ,  H01L21/0228 ,  H01L21/0234 ,  H01L21/31111

Abstract: Methods of depositing boron and carbon containing films are provided. In some embodiments, methods of depositing B,C films with desirable properties, such as conformality and etch rate, are provided. One or more boron and/or carbon containing precursors can be decomposed on a substrate at a temperature of less than about 400° C. In some embodiments methods of depositing silicon nitride films comprising B and C are provided. A silicon nitride film can be deposited by a deposition process including an ALD cycle that forms SiN and a CVD cycle that contributes B and C to the growing film.

公开(公告)号：US20250006489A1

公开(公告)日：2025-01-02

申请号：US18754246

申请日：2024-06-26

Applicant: ASM IP Holding B.V.

Inventor： Ranjit Borude ,  Bablu Mukherjee ,  René Henricus Jozef Vervuurt ,  Viljami Pore ,  Takayoshi Tsutsumi ,  Nobuyoshi Kobayashi ,  Masaru Hori

IPC: H01L21/02 ,  C23C16/30 ,  C23C16/32 ,  C23C16/34 ,  C23C16/40 ,  C23C16/455 ,  C23C16/517 ,  H01J37/32

Abstract: The disclosure relates to methods of depositing a material comprising silicon in a gap. The method comprises providing a substrate, the substrate comprising the gap, wherein the gap comprises an inner surface and exposing the substrate to a first plasma having high ion energy to modify predetermined areas of the gap inner surface. The method further comprises exposing the substrate to a second plasma having low ion energy to passivate the modified areas of the gap surface to form passivated modified areas on the gap surface and contacting the substrate with a vapor-phase silicon precursor to chemisorb the silicon precursor on unmodified areas of the gap for depositing material comprising silicon on the unmodified areas. The current disclosure further relates to a method of controlling chemisorption of a vapor-phase silicon precursor on a substrate, and to a semiconductor processing assembly for performing the methods according to the current disclosure.

公开(公告)号：US11996286B2

公开(公告)日：2024-05-28

申请号：US17457858

申请日：2021-12-06

Applicant: ASM IP HOLDING B.V.

Inventor： Charles Dezelah ,  Hideaki Fukuda ,  Viljami Pore

IPC: C23C16/34 ,  C23C16/455 ,  C23C16/52 ,  H01J37/32 ,  H01L21/02

CPC classification number: H01L21/02274 ,  C23C16/345 ,  C23C16/45542 ,  C23C16/45544 ,  C23C16/45553 ,  C23C16/52 ,  H01J37/32357 ,  H01J37/32449 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/0228 ,  H01J2237/332

Abstract: The current disclosure relates to a vapor deposition assembly for depositing silicon nitride on a substrate by a plasma-enhanced cyclic deposition process. The disclosure also relates to a method for depositing silicon nitride on a substrate by a plasma-enhanced cyclic deposition process. The method comprises providing a substrate in a reaction chamber, providing a vapor-phase silicon precursor according to the formula SiH3X, wherein X is iodine or bromine, into the reaction chamber, removing excess silicon precursor and possible reaction byproducts from the reaction chamber and providing a reactive species generated from a nitrogen-containing plasma into the reaction chamber to form silicon nitride on the substrate. The disclosure further relates to structure and devices formed by the method.

公开(公告)号：US11990333B2

公开(公告)日：2024-05-21

申请号：US18208398

申请日：2023-06-12

Applicant: ASM IP Holding B.V.

Inventor： Viljami Pore ,  Werner Knaepen ,  Bert Jongbloed ,  Dieter Pierreux ,  Gido van Der Star ,  Toshiya Suzuki

IPC: H01L21/02 ,  C23C16/04 ,  C23C16/455 ,  C23C16/50 ,  H01L21/762

CPC classification number: H01L21/0228 ,  C23C16/045 ,  C23C16/45525 ,  C23C16/45527 ,  C23C16/45536 ,  C23C16/50 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02178 ,  H01L21/02211 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/76224

Abstract: There is provided a method of filling one or more gaps by providing the substrate in a reaction chamber and introducing a first reactant to the substrate with a first dose, thereby forming no more than about one monolayer by the first reactant on a first area; introducing a second reactant to the substrate with a second dose, thereby forming no more than about one monolayer by the second reactant on a second area of the surface, wherein the first and the second areas overlap in an overlap area where the first and second reactants react and leave an initially unreacted area where the first and the second areas do not overlap; and, introducing a third reactant to the substrate with a third dose, the third reactant reacting with the first or second reactant remaining on the initially unreacted area.

公开(公告)号：US20240047264A1

公开(公告)日：2024-02-08

申请号：US18380981

申请日：2023-10-17

Applicant: ASM IP Holding B.V.

Inventor： Zecheng Liu ,  Viljami Pore

IPC: H01L21/762 ,  H01L21/02 ,  C23C16/04 ,  C23C16/455

CPC classification number: H01L21/76224 ,  H01L21/02274 ,  C23C16/04 ,  C23C16/45536 ,  C23C16/45544 ,  H01L21/0228

Abstract: There is provided a method of filling one or more recesses by providing the substrate in a reaction chamber; introducing a first reactant, to form first active species, for a first pulse time to the substrate; introducing a second reactant for a second pulse time to the substrate; and introducing a third reactant, to form second active species, for a third pulse time to the substrate. An apparatus for filling a recess is also disclosed and a structure formed using the method and/or apparatus is disclosed.

公开(公告)号：US20230335397A1

公开(公告)日：2023-10-19

申请号：US18208398

申请日：2023-06-12

Applicant: ASM IP Holding B.V.

Inventor： Viljami Pore ,  Werner Knaepen ,  Bert Jongbloed ,  Dieter Pierreux ,  Gido van Der Star ,  Toshiya Suzuki

IPC: H01L21/02 ,  C23C16/04 ,  C23C16/455 ,  C23C16/50 ,  H01L21/762

CPC classification number: H01L21/0228 ,  C23C16/045 ,  C23C16/45527 ,  C23C16/45536 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02178 ,  H01L21/02211 ,  H01L21/02219 ,  C23C16/45525 ,  C23C16/50 ,  H01L21/02274 ,  H01L21/76224

Abstract: There is provided a method of filling one or more gaps by providing the substrate in a reaction chamber and introducing a first reactant to the substrate with a first dose, thereby forming no more than about one monolayer by the first reactant on a first area; introducing a second reactant to the substrate with a second dose, thereby forming no more than about one monolayer by the second reactant on a second area of the surface, wherein the first and the second areas overlap in an overlap area where the first and second reactants react and leave an initially unreacted area where the first and the second areas do not overlap; and, introducing a third reactant to the substrate with a third dose, the third reactant reacting with the first or second reactant remaining on the initially unreacted area.

公开(公告)号：US11643726B2

公开(公告)日：2023-05-09

申请号：US17580832

申请日：2022-01-21

Applicant: ASM IP Holding B.V.

Inventor： Marko Tuominen ,  Viljami Pore

IPC: C23C16/458 ,  C23C16/509 ,  C23C16/517 ,  C23C16/56 ,  C23C16/52 ,  C23C16/455

CPC classification number: C23C16/4586 ,  C23C16/45536 ,  C23C16/45565 ,  C23C16/509 ,  C23C16/517 ,  C23C16/52 ,  C23C16/56

Abstract: Methods for depositing materials are described. The methods comprise maintaining a substrate support at a substrate support temperature which is lower than a precursor source temperature. The methods further comprise condensing or depositing a precursor on a substrate, and then curing condensed or deposited precursor to form a layer.

公开(公告)号：US11542600B2

公开(公告)日：2023-01-03

申请号：US17173467

申请日：2021-02-11

Applicant: ASM IP HOLDING B.V.

Inventor： Viljami Pore ,  Timo Hatanpää ,  Mikko Ritala ,  Markku Leskelä

IPC: H01L21/00 ,  C23C16/455 ,  C23C16/30 ,  H01L21/02 ,  H01L45/00 ,  C23C16/18 ,  C23C16/44

Abstract: Atomic layer deposition (ALD) processes for forming Group VA element containing thin films, such as Sb, Sb—Te, Ge—Sb and Ge—Sb—Te thin films are provided, along with related compositions and structures. Sb precursors of the formula Sb(SiR1R2R3)3 are preferably used, wherein R1, R2, and R3 are alkyl groups. As, Bi and P precursors are also described. Methods are also provided for synthesizing these Sb precursors. Methods are also provided for using the Sb thin films in phase change memory devices.

公开(公告)号：US20220319834A1

公开(公告)日：2022-10-06

申请号：US17708299

申请日：2022-03-30

Applicant: ASM IP Holding, B.V.

Inventor： René Henricus Jozef Vervuurt ,  Timothee Blanquart ,  Viljami Pore ,  Yu Xu

IPC: H01L21/02 ,  H01L21/768 ,  H01J37/32 ,  C23C16/50 ,  C23C16/40 ,  C23C16/52 ,  C23C16/455

Abstract: Disclosed are methods and systems for filling a gap. The methods and systems are useful, for example, in the field of integrated circuit manufacture.

公开(公告)号：US20220285211A1

公开(公告)日：2022-09-08

申请号：US17680711

申请日：2022-02-25

Applicant: ASM IP Holding B.V.

Inventor： Elina Färm ,  Shinya Iwashita ,  Charles Dezelah ,  Jan Willem Maes ,  Timothee Blanquart ,  René Henricus Jozef Vervuurt ,  Viljami Pore ,  Giuseppe Alessio Verni ,  Qi Xie ,  Ren-Jie Chang ,  Eric James Shero

IPC: H01L21/768 ,  H01L21/02 ,  C23C16/455

Abstract: Disclosed are methods and systems for filling a gap. An exemplary method comprises providing a substrate to a reaction chamber. The substrate comprises the gap. The method further comprises at least partially filling the gap with a gap filling fluid. The methods and systems are useful, for example, in the field of integrated circuit manufacture.