公开(公告)号：US10886137B2

公开(公告)日：2021-01-05

申请号：US16399391

申请日：2019-04-30

Applicant: Applied Materials, Inc.

Inventor： Prerna Sonthalia Goradia ,  Yogita Pareek ,  Geetika Bajaj ,  Robert Jan Visser ,  Nitin K. Ingle

IPC: H01L21/311 ,  H01L21/67

Abstract: Exemplary methods for selective etching of semiconductor materials may include flowing a fluorine-containing precursor into a processing region of a semiconductor processing chamber. The methods may also include flowing a silicon-containing suppressant into the processing region of the semiconductor processing chamber. The methods may further include contacting a substrate with the fluorine-containing precursor and the silicon-containing suppressant. The substrate may include an exposed region of silicon nitride and an exposed region of silicon oxide. The methods may also include selectively etching the exposed region of silicon nitride to the exposed region of silicon oxide.

公开(公告)号：US10690808B2

公开(公告)日：2020-06-23

申请号：US16105780

申请日：2018-08-20

Applicant: Applied Materials, Inc.

Inventor： Rutger Meyer Timmerman Thijssen ,  Robert Jan Visser ,  Tapashree Roy

IPC: G02B1/00

Abstract: Aspects disclosed herein relate to color filters for display devices, and more specifically to color filters for transmitting or reflecting and recycling colors of light in liquid crystal display devices. In one aspect, a metasurface is formed between two polarizers in an LCD device. In another aspect, a metasurface is formed on a white light guide of an LCD device. The metasurface is formed to transmit desired color(s) of light and to reflect undesired color(s) of light back into the light guide to be recycled and passed through the LCD device elsewhere. Using the color filter to recycle reflected colors of light increases the efficiency of the display device, such as the LCD device.

公开(公告)号：US10559730B2

公开(公告)日：2020-02-11

申请号：US16369574

申请日：2019-03-29

Applicant: Applied Materials, Inc.

Inventor： Manivannan Thothadri ,  Christopher Dennis Bencher ,  Robert Jan Visser ,  John M. White

IPC: H01L33/58 ,  H01L27/15 ,  H01L25/065 ,  G02B27/22 ,  H04N13/307 ,  G02B17/00 ,  G02B3/00 ,  G02B5/04 ,  G02B19/00

Abstract: The present disclosure generally relates to light field displays and methods of displaying images with light field arrays. In one example, the present disclosure relates to pixel arrangements for use in light field displays. Each pixel includes a plurality of LEDs, such as micro LEDs, positioned adjacent respective micro-lenses of each pixel.

公开(公告)号：US20190333776A1

公开(公告)日：2019-10-31

申请号：US16399391

申请日：2019-04-30

Applicant: Applied Materials, Inc.

Inventor： Prerna Sonthalia Goradia ,  Yogita Pareek ,  Geetika Bajaj ,  Robert Jan Visser ,  Nitin K. Ingle

IPC: H01L21/311 ,  H01L21/67

Abstract: Exemplary methods for selective etching of semiconductor materials may include flowing a fluorine-containing precursor into a processing region of a semiconductor processing chamber. The methods may also include flowing a silicon-containing suppressant into the processing region of the semiconductor processing chamber. The methods may further include contacting a substrate with the fluorine-containing precursor and the silicon-containing suppressant. The substrate may include an exposed region of silicon nitride and an exposed region of silicon oxide. The methods may also include selectively etching the exposed region of silicon nitride to the exposed region of silicon oxide.

公开(公告)号：US20190128507A1

公开(公告)日：2019-05-02

申请号：US15921940

申请日：2018-03-15

Applicant: Applied Materials, Inc.

Inventor： Tapashree Roy ,  Rutger Meyer Timmerman Thijssen ,  Robert Jan Visser

IPC: F21V13/08 ,  F21V9/08 ,  F21V9/14 ,  G02F1/1335

Abstract: Embodiments described herein relate to nanostructured trans-reflective filters having sub-wavelength dimensions. In one embodiment, the trans-reflective filter includes a film stack that transmits a filtered light within a range of wavelengths and reflects light not within the first range of wavelengths. The film stack includes a first metal film disposed on a substrate having a first thickness, a first dielectric film disposed on the first metal film having a second thickness, a second metal film disposed on the first dielectric film having a third thickness, and a second dielectric film disposed on the second metal film having a fourth thickness.

公开(公告)号：US20180363133A1

公开(公告)日：2018-12-20

申请号：US15625797

申请日：2017-06-16

Applicant: Applied Materials, Inc.

Inventor： Ranga Rao Arnepalli ,  Robert Jan Visser ,  Pramit Manna ,  Abhijit Basu Mallick ,  Prerna Goradia

IPC: C23C16/455 ,  C23C16/458 ,  C23C16/46 ,  C23C16/52 ,  H01L21/768 ,  H01L21/762

Abstract: Methods for filling a substrate feature with a seamless silicon nitride gapfill through a radical based hot wire chemical vapor deposition process are described. Also described is an apparatus for performing the radical based hot wire chemical vapor deposition of the silicon nitride gapfill.

公开(公告)号：US10153325B2

公开(公告)日：2018-12-11

申请号：US15619173

申请日：2017-06-09

Applicant: Applied Materials, Inc.

Inventor： Manivannan Thothadri ,  Robert Jan Visser

IPC: H05K13/04 ,  H01L27/15 ,  H01L33/60 ,  H05K3/00 ,  H05K3/30 ,  H05K13/00 ,  H01L21/67 ,  H01L21/683 ,  H01L33/48

Abstract: A method of surface mounting micro-devices includes adhering a first plurality of micro-devices on a donor substrate to a transfer surface with an adhesive layer, removing the first plurality of micro-devices from donor substrate while the first plurality of micro-devices remain adhered to the transfer surface, positioning the transfer surface relative to a destination substrate so that a subset of the plurality of micro-devices on the transfer surface abut a plurality of receiving positions on the destination substrate, the subset including one or more micro-devices but less than all of micro-devices of the plurality of micro-devices, selectively neutralizing one or more of regions of the adhesive layer on the transfer surface corresponding to the subset of micro-device to light to detach the subset of micro-devices from the adhesive layer, and separating the transfer surface from the destination substrate such that the subset of micro-devices remain on the destination substrate.

公开(公告)号：US20180350597A1

公开(公告)日：2018-12-06

申请号：US16001251

申请日：2018-06-06

Applicant: Applied Materials, Inc.

Inventor： Rui Cheng ,  Fei Wang ,  Abhijit Basu Mallick ,  Robert Jan Visser

IPC: H01L21/02 ,  H01L21/3065

Abstract: Methods for selective silicon film deposition on a substrate comprising a first surface and a second surface are described. More specifically, the process of depositing a film, treating the film to change some film property and selectively etching the film from various surfaces of the substrate are described. The deposition, treatment and etching can be repeated to selectively deposit a film on one of the two substrate surfaces.

公开(公告)号：US20180277384A1

公开(公告)日：2018-09-27

申请号：US15467866

申请日：2017-03-23

Applicant: Applied Materials, Inc.

Inventor： Ranga Rao Arnepalli ,  Prerna Goradia ,  Prayudi Lianto ,  Jie Zeng ,  Arvind Sundarrajan ,  Robert Jan Visser ,  Guan Huei See

IPC: H01L21/3105 ,  H01L21/321 ,  H01L21/3205 ,  H01L21/67 ,  C09G1/02 ,  C09K3/14

CPC classification number: H01L21/31058 ,  B24B1/00 ,  B24B37/044 ,  C09G1/00 ,  C09G1/02 ,  C09G1/04 ,  C09G1/06 ,  C09K3/1409 ,  C09K3/1436 ,  C09K3/1454 ,  C09K3/1463 ,  C09K13/06 ,  H01L21/30625 ,  H01L21/32051

Abstract: A slurry for chemical mechanical planarization includes water, 1-3 wt. % of abrasive particles having an average diameter of at least 10 nm and less than 100 nm and an outer surface of ceria, and ½-3 wt. % of at least one amine.

公开(公告)号：US10074559B1

公开(公告)日：2018-09-11

申请号：US15452394

申请日：2017-03-07

Applicant: APPLIED MATERIALS, INC.

Inventor： Geetika Bajaj ,  Tapash Chakraborty ,  Prerna Sonthalia Goradia ,  Robert Jan Visser ,  Bhaskar Kumar ,  Deenesh Padhi

IPC: H01L21/32 ,  H01L21/768

Abstract: Methods of discouraging poreseal deposition on metal (e.g. copper) at the bottom of a via during a poresealing process are described. A self-assembled monolayer (SAM) is selectively formed on the exposed metal surface and prevents or discourages formation of poreseal on the metal. The SAM is selectively formed by exposing a patterned substrate to a SAM molecule which preferentially binds to exposed metal surfaces rather than exposed dielectric surfaces. The selected SAM molecules tend to not bind to low-k films. The SAM and SAM molecule are also chosen so the SAM tolerates subsequent processing at relatively high processing temperatures above 140° C. or 160° C. Aliphatic or aromatic SAM molecules with thiol head moieties may be used to form the SAM.