Abstract:
In accordance with the present invention there is provided an outboard motor for use in powering a watercraft of the type having an operator station positioned along a starboard side of the watercraft. The motor has a water propulsion device powered by an engine having an exhaust system generally positioned along a right side thereof. A cooling system is provided for cooling the engine and the exhaust system. Preferably, the motor includes a cooling water tell-tale acting as a visual identifier to the operator of the craft that the cooling system for the engine is operating. The tell-tale is created by diverting coolant from a portion of the cooling system for cooling the exhaust system to a pilot port in the side of the cowling corresponding to the starboard side of the watercraft. In addition, the motor preferably includes a throttle control and shift control which extend along the right side of the engine through the cowling to the operator station in the watercraft. The throttle control is connected via a linkage extending to the opposite side of the engine to an intake throttle, while the shift control is connected via a linkage to a transmission control.
Abstract:
A method of fabricating a ferroelectric or layered superlattice DRAM compatible with conventional silicon CMOS technology. A MOSFET is formed on a silicon substrate. A thick layer of BPSG followed by a thin SOG layer overlies the MOSFET. A capacitor is formed by depositing a layer of platinum, annealing, depositing an intermediate layer comprising a ferroelectric or layer superlattice material, annealing, depositing a second layer of platinum, then patterning the capacitor. Another SOG layer is deposited, contact holes to the MOSFET and capacitor are partially opened, the SOG is annealed, the contact holes are completely opened, and a Pt/Ti/PtSi wiring layer is deposited.
Abstract translation:制造与常规硅CMOS技术兼容的铁电或分层超晶格DRAM的方法。 在硅衬底上形成MOSFET。 厚层的BPSG后面是薄的SOG层覆盖在MOSFET上。 通过沉积铂层,退火,沉积包含铁电体或层超晶格材料的中间层,退火,沉积第二层铂,然后构图电容器,形成电容器。 沉积另一个SOG层,MOSFET和电容器的接触孔部分打开,SOG退火,接触孔完全打开,并沉积Pt / Ti / PtSi布线层。
Abstract:
A number of embodiments of four-cycle internal combustion engines having belt-driven overhead cam shafts. The power head of the outboard motor includes a protective cowling that has an atmospheric air inlet and the air drawn through this atmospheric air inlet is directed over a timing belt that drives the cam shaft from the engine crankshaft for its cooling. The air flow is controlled either by utilization of fans, baffles and/or utilizing the flow of air caused by the induction system.
Abstract:
An oversize ferroelectric capacitor is located against the contact hole to the MOSFET source/drain in a DRAM. A barrier layer made of titanium nitride, titanium tungsten, tantalum, titanium, tungsten, molybdenum, chromium, indium tin oxide, tin dioxide, ruthenium oxide, silicon, silicide, or polycide lies between the ferroelectric layer and the source drain. The barrier layer may act as the bottom electrode of the ferroelectric capacitor, or a separate bottom electrode made of platinum may be used. In another embodiment in which the barrier layer forms the bottom electrode, an oxide layer less than 5 nm thick is located between the barrier layer and the ferroelectric layer and the barrier layer is made of silicon, silicide, or polycide. A thin silicide layer forms and ohmic contact between the barrier layer and the source/drain. The capacitor and the barrier layer are patterned in a single mask step. The ends of the capacitor are stepped or tapered. In another embodiment both the bottom and top electrode may be made of silicon, silicide, polycide or a conductive oxide, such as indium tin oxide, tin dioxide, or ruthenium oxide.
Abstract:
A method and apparatus for programming ferroelectric memory cells which reduces fatigue effects of switching polarization of the ferroelectric devices associated with the memory cells such as ferroelectric capacitors and transistors. Alteration of the rise AC fall times associated with signals used to switch ferroelectric device polarization are shown to reduce fatigue of the ferroelectric material thereby increasing the useful life of ferroelectric memory cells. Slowing the rise and fall times as well as the rate of signal level rise and fall, (signal shape), are shown to reduce the fatigue effects of switching polarization of ferroelectric devices. Methods and apparatus for producing a triangular ("sawtooth") signal waveform, a Gaussian signal waveform, and a waveform having exponential rise and fall times are disclosed.
Abstract:
A semiconductor optical element includes a semiconductor layer on a semiconductor substrate, a plurality of parallel stripe-shaped grooves in the layer having widths sufficiently narrow to produce a quantum effect and spaced at an interval sufficiently narrow to produce a quantum effect in a semiconductor layer disposed between adjacent grooves, and a structure including alternating semiconductor quantum well and barrier layers disposed on the semiconductor layer in which the quantum well layer thickness is less than the depth of the grooves and sufficiently thin to produce a quantum effect and the barrier layer thickness is larger than the depth of the grooves, the quantum well and barrier layers being alternatingly disposed on the semiconductor layer in the grooves and on regions between adjacent grooves.
Abstract:
An optical data recording medium provided with a recording layer, the recording medium having excellent durability to light and heat, superior writing sensitivity and a high C/N value, wherein at least one a group of anion selected from a group of hexafluorophosphate ion (PF.sub.6 .sup.-), trifluoromethane sulfonate ion (CF.sub.3 SO.sub.3 .sup.-) or thiocyanate ion (SCN.sup.-) is present as the anion in an indol cyanine dye having a methyne chain present in the recording layer of the optical data recording medium.
Abstract:
A solid state electronic device having a thin film of an Al (aluminum) alloy Li (lithium) on the surface of a substrate for a surface acoustic wave (SAW). Interdigital electrodes, electric wiring patterns and bonding pads are formed by the thin film of the Li-added Al alloy. This thin film suppresses migration which occurs when a high density current is supplied to the device or a large amplitude SAW is generated. The thin film, which provides a small loss and relatively low hardness, provides a desired power handling capability and high yield of wire bonding. The this film assures high endurance to failure of the device and sufficient life of the device.
Abstract:
A cheap and small ball spline bearing comprises: identical balls; an outer hollow cylinder; a cylindrical holding apparatus fixed to the inner peripheral surface of this cylinder; and a spline axis. In the outer cylinder, three projections are formed in the inner peripheral surface at regular intervals in the axial direction, track grooves adapted to load the balls are formed in both side surfaces of each projection, and U-shaped grooves between the projections are formed to have the almost same depth. In the holding apparatus, infinite circulating passages for the balls using the both side surfaces as track grooves are formed symmetrically on the right and left sides with regard to the central line in the axial direction of each U-shaped groove, and windows each width of which is slightly narrower than the ball diameter are formed in the axial direction at the locations of the track grooves. The spline axis has six protuberances formed so as to sandwich the load balls existing at the locations of the projections of the cylinder, and track grooves are formed in the portions which are in contact with the balls. This bearing has a high rigidity and a small slide resistance and can be easily and accurately worked.