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55 条记录 (耗时 0.039 秒)

    Method and apparatus for depositing tungsten after surface treatment to improve film characteristics
    41.
    发明授权
    Method and apparatus for depositing tungsten after surface treatment to improve film characteristics 失效
    用于在表面处理后沉积钨以提高膜特性的方法和装置

    公开(公告)号：US06936538B2

    公开(公告)日：2005-08-30

    申请号：US10196514

    申请日：2002-07-15

    申请人： Jeong Soo Byun

    发明人： Jeong Soo Byun

    IPC分类号： C23C16/14 ,  C23C16/44 ,  C23C16/455 ,  H01L21/28 ,  H01L21/285 ,  H01L21/768 ,  H01L21/44

    CPC分类号： C23C16/45525 ,  C23C16/0281 ,  C23C16/14 ,  C23C16/45529 ,  H01L21/28562 ,  H01L21/76843 ,  H01L21/76876 ,  H01L21/76877 ,  H01L2221/1089

    摘要： A method and system to form a refractory metal layer over a substrate includes introduction of a reductant, such as PH3 or B2H6, followed by introduction of a tungsten containing compound, such as WF6, to form a tungsten layer. It is believed that the reductant reduces the fluorine content of the tungsten layer while improving the step coverage and resistivity of the tungsten layer. It is believed that the improved characteristics of the tungsten film are attributable to the chemical affinity between the reductants and the tungsten containing compound. The chemical affinity provides better surface mobility of the adsorbed chemical species and better reduction of WF6 at the nucleation stage of the tungsten layer. The method can further include sequentially introducing a reductant, such as PH3 or B2H6, and a tungsten containing compound to deposit a tungsten layer. The formed tungsten layer can be used as a nucleation layer followed by bulk deposition of a tungsten layer utilizing standard CVD techniques. Alternatively, the formed tungsten layer can be used to fill an aperture.

    摘要翻译： 在衬底上形成难熔金属层的方法和系统包括引入还原剂，例如PH 3或B 2 H 6 C 6， 然后引入含钨化合物，例如WF 6 N，以形成钨层。 据信，还原剂降低了钨层的氟含量，同时改善了钨层的阶梯覆盖和电阻率。 据信，钨膜的改进的特性可归因于还原剂和含钨化合物之间的化学亲和力。 化学亲合力提供吸附的化学物质的更好的表面迁移率，并且在钨层的成核阶段更好地还原WF 6。 该方法可以进一步包括依次引入还原剂，例如PH 3或B 2 H 6，以及含钨化合物以沉积钨 层。 形成的钨层可以用作成核层，随后使用标准CVD技术大量沉积钨层。 或者，形成的钨层可用于填充孔。

    Method for fabricating semiconductor device
    43.
    发明授权
    Method for fabricating semiconductor device 失效
    制造半导体器件的方法

    公开(公告)号：US6096630A

    公开(公告)日：2000-08-01

    申请号：US949397

    申请日：1997-10-14

    申请人： Jeong Soo Byun ,  Byung Hak Lee

    发明人： Jeong Soo Byun ,  Byung Hak Lee

    IPC分类号： H01L21/20 ,  H01L21/28 ,  H01L21/336 ,  H01L21/8238 ,  H01L27/10 ,  H01L21/3205 ,  H01L21/4763

    CPC分类号： H01L21/28061 ,  H01L21/823835

    摘要： Method for fabricating a semiconductor device, is disclosed, which is suitable for improving a resistivity, including the steps of forming a silicon layer on a substrate, forming a crystalline metal silicide layer on the silicon layer, forming an amorphous metal silicide layer by injecting ions into the crystalline metal silicide layer, and crystallizing the amorphous metal silicide by heat treating the amorphous metal silicide.

    摘要翻译： 公开了用于制造半导体器件的方法，其适于提高电阻率，包括在衬底上形成硅层的步骤，在硅层上形成结晶金属硅化物层，通过注入离子形成非晶金属硅化物层 进入结晶金属硅化物层，并通过热处理非晶金属硅化物使非晶金属硅化物结晶。

    Method for forming a silicide layer in a semiconductor device
    44.
    发明授权
    Method for forming a silicide layer in a semiconductor device 失效
    在半导体器件中形成硅化物层的方法

    公开(公告)号：US5824600A

    公开(公告)日：1998-10-20

    申请号：US524457

    申请日：1995-09-06

    申请人： Jeong Soo Byun ,  Hyung Jun Kim

    发明人： Jeong Soo Byun ,  Hyung Jun Kim

    IPC分类号： H01L21/285 ,  H01L21/44

    CPC分类号： H01L21/28518

    摘要： A method for forming a silicide layer in a semiconductor device, including the steps of: forming a refractory metal layer on a semiconductor substrate; forming a cobalt layer on the refractory metal layer; implanting impurities in the interface between the refractory metal layer and the cobalt layer; heat treating the semiconductor substrate such that cobalt atoms from the cobalt layer pass through the refractory metal layer and form a cobalt silicide epitaxy layer on the semiconductor substrate; and removing the remaining cobalt layer and the remaining refractory metal layer.

    摘要翻译： 一种在半导体器件中形成硅化物层的方法，包括以下步骤：在半导体衬底上形成难熔金属层; 在难熔金属层上形成钴层; 在难熔金属层和钴层之间的界面中注入杂质; 对所述半导体衬底进行热处理，使得来自所述钴层的钴原子穿过所述难熔金属层，并在所述半导体衬底上形成硅化钴外延层; 并除去剩余的钴层和剩余的难熔金属层。

    Method for forming platinum silicide plugs
    45.
    发明授权
    Method for forming platinum silicide plugs 失效
    铂硅硅化物塞的形成方法

    公开(公告)号：US5645887A

    公开(公告)日：1997-07-08

    申请号：US523749

    申请日：1995-09-05

    申请人： Jeong Soo Byun

    发明人： Jeong Soo Byun

    IPC分类号： H01L21/768 ,  C23C16/00 ,  H01L21/28

    CPC分类号： H01L21/76877 ,  H01L21/76889

    摘要： A method for forming platinum silicide plugs suitable for use in very large scale integrated semiconductor devices having large aspect ratios. The method includes the steps of: providing a silicon substrate on which a conductive layer is formed; forming an insulating layer on the silicon substrate and the conductive layer; patterning the insulating layer to form a contact hole on the conductive layer; exposing the conductive layer to air to thereby form a thin native oxide layer on the conductive layer; forming a blanket polysilicon film on the entire resulting structure thick enough to completely fill the contact hole; etching back the blanket polysilicon film to expose the insulating layer, thereby forming a silicon plug in the contact hole; forming a platinum layer on the silicon plug and the insulating layer; performing heat treatment to thereby convert the silicon plug to a platinum silicide plug; and thereafter removing the remaining platinum layer.

    摘要翻译： 一种用于形成适合用于具有大纵横比的大规模集成半导体器件的铂硅化物插头的方法。 该方法包括以下步骤：提供其上形成导电层的硅衬底; 在所述硅衬底和所述导电层上形成绝缘层; 图案化绝缘层以在导电层上形成接触孔; 将导电层暴露于空气中，从而在导电层上形成薄的自然氧化物层; 在整个所得结构上形成厚度足以完全填充接触孔的毯状多晶硅膜; 蚀刻回覆多晶硅膜以暴露绝缘层，从而在接触孔中形成硅插头; 在硅插头和绝缘层上形成铂层; 进行热处理，由此将硅插头转换成硅化铂插头; 然后除去剩余的铂层。

    Formation of boride barrier layers using chemisorption techniques
    48.
    发明授权
    Formation of boride barrier layers using chemisorption techniques 有权
    使用化学吸附技术形成硼化物阻挡层

    公开(公告)号：US07501344B2

    公开(公告)日：2009-03-10

    申请号：US11739549

    申请日：2007-04-24

    申请人： Jeong Soo Byun ,  Alfred Mak

    发明人： Jeong Soo Byun ,  Alfred Mak

    IPC分类号： H01L21/44

    CPC分类号： C23C16/45529 ,  C23C16/38 ,  C23C16/45531 ,  C23C16/45553 ,  H01L21/28562 ,  H01L21/76843 ,  H01L21/76846

    摘要： In one embodiment, a method for depositing a boride-containing barrier layer on a substrate is provided which includes exposing the substrate sequentially to a boron-containing compound and a tungsten precursor to form a first boride-containing layer during a first sequential chemisorption process, and exposing the substrate to the boron-containing compound, the tungsten precursor, and ammonia to form a second boride-containing layer over the first boride-containing layer during a second sequential chemisorption process. In one example, the tungsten precursor contains tungsten hexafluoride and the boron-containing compound contains diborane. In another embodiment, a contact layer is deposited over the second boride-containing layer. The contact layer may contain tungsten and be deposited by a chemical vapor deposition process. Alternatively, the contact layer may contain copper and be deposited by a physical vapor deposition process. In other examples, boride-containing layers may be formed at a temperature of less than about 500° C.

    摘要翻译： 在一个实施例中，提供了一种用于在衬底上沉积含硼化物阻挡层的方法，其包括在第一顺序化学吸附过程期间将衬底依次暴露于含硼化合物和钨前体以形成第一含硼化物层， 以及在第二顺序化学吸附过程期间将所述衬底暴露于含硼化合物，钨前体和氨以在第一含硼化物层上形成第二含硼化物层。 在一个实例中，钨前体含有六氟化钨，含硼化合物含有乙硼烷。 在另一个实施方案中，在第二含硼化物层上沉积接触层。 接触层可以含有钨并通过化学气相沉积工艺进行沉积。 或者，接触层可以含有铜并通过物理气相沉积工艺进行沉积。 在其他实例中，含硼化物的层可以在小于约500℃的温度下形成。