公开(公告)号：US07838874B2

公开(公告)日：2010-11-23

申请号：US12213094

申请日：2008-06-13

申请人： Takahiro Ibe ,  Hisao Ikeda ,  Junichi Koezuka ,  Kaoru Kato

发明人： Takahiro Ibe ,  Hisao Ikeda ,  Junichi Koezuka ,  Kaoru Kato

IPC分类号： H01L51/54

CPC分类号： H01L51/5284 ,  H01L51/5052

摘要： The present invention provides a light-emitting element and a light-emitting device which have high contrast, and specifically, provides a light-emitting device whose contrast is enhanced, not by using a polarizing plate but using a conventional electrode material. Reflection of external light is suppressed by provision of a light-absorbing layer included between a non-light-transmitting electrode and a light-emitting layer. As the light-absorbing layer, a layer is used, which is obtained by adding a halogen atom into a layer including an organic compound and a metal oxide. Further, the light-absorbing layer is formed also over a region in which a thin film transistor for driving a light-emitting element is formed, a region in which a wiring is formed, and the like, and thus light is extracted from the side opposite to the region in which the TFT is formed, thereby reducing reflection of external light.

摘要翻译： 本发明提供一种具有高对比度的发光元件和发光装置，具体地说，提供了不是通过使用偏光板而是使用常规电极材料来提高对比度的发光装置。 通过设置非光发射电极和发光层之间的光吸收层来抑制外部光的反射。 作为光吸收层，使用通过在包含有机化合物和金属氧化物的层中添加卤素原子得到的层。 此外，在形成有用于驱动发光元件的薄膜晶体管，形成布线的区域等的区域上也形成光吸收层，从而从侧面提取光 与形成TFT的区域相反，从而减少外部光的反射。

公开(公告)号：US07821005B2

公开(公告)日：2010-10-26

申请号：US11404923

申请日：2006-04-17

申请人： Shunpei Yamazaki ,  Osamu Nakamura ,  Masayuki Kajiwara ,  Junichi Koezuka

发明人： Shunpei Yamazaki ,  Osamu Nakamura ,  Masayuki Kajiwara ,  Junichi Koezuka

IPC分类号： H01L29/10 ,  H01L29/76 ,  H01L31/112

CPC分类号： H01L29/78621 ,  H01L21/02532 ,  H01L21/02667 ,  H01L21/02672 ,  H01L21/02675 ,  H01L27/1255 ,  H01L27/1277 ,  H01L29/66757 ,  H01L29/78633 ,  H01L29/78645 ,  Y10S257/913

摘要： Phosphorus is implanted into a crystalline semiconductor film by an ion dope method. However, a concentration of phosphorus required for gettering is 1×1020/cm3 or higher which hinders recrystallization by later anneal, and thus this becomes a problem. Also, when phosphorus is added at a high concentration, processing time required for doping is increased and throughput in a doping step is reduced, and thus this becomes a problem. The present invention is characterized in that impurity regions to which an element belonging to the group 18 of the periodic table is added are formed in a semiconductor film having a crystalline structure and gettering for segregating in the impurity regions a metal element contained in the semiconductor film is performed by heat treatment. Also, a one conductivity type impurity may be contained in the impurity regions.

摘要翻译： 通过离子掺杂法将磷注入到结晶半导体膜中。 然而，吸杂所需的磷的浓度为1×10 10 / cm 3以上，这阻碍后续退火的再结晶，因此成为问题。 此外，当以高浓度添加磷时，掺杂所需的处理时间增加，并且掺杂步骤中的生产量降低，因此这成为问题。 本发明的特征在于，在具有晶体结构的半导体膜中形成杂质区域，其中添加了属于元素周期表第18族的元素，并且在杂质区域中分离出包含在半导体膜中的金属元素的吸杂剂 通过热处理进行。 此外，杂质区域中也可以含有一种导电型杂质。

公开(公告)号：US07713761B2

公开(公告)日：2010-05-11

申请号：US11798980

申请日：2007-05-18

申请人： Junichi Koezuka ,  Naoto Yamade

发明人： Junichi Koezuka ,  Naoto Yamade

IPC分类号： G01R31/26 ,  H01L21/66

CPC分类号： H01L22/24 ,  H01L27/12 ,  H01L27/1285 ,  H01L27/1292 ,  Y10S438/914

摘要： It is an object of the present invention to provide a doping apparatus, a doping method, and a method for fabricating a thin film transistor that can carry out doping to the carrier concentration which is optimum for obtaining the desired electric characteristic non-destructively and in an easy manner. In accordance with the present invention, an electric characteristic of a semiconductor element (threshold voltage in a transistor and the like) is correctly and precisely monitored by using a contact angle, and is controlled by controlling a doping method. In addition, the present invention can be momentarily acquired information by in-situ monitoring the characteristic and can be fed back without a time lag.

摘要翻译： 本发明的目的是提供一种掺杂装置，掺杂方法和制造薄膜晶体管的方法，所述薄膜晶体管可以对载流子浓度进行掺杂，这对于非破坏性地获得所需的电特性是最佳的 一个简单的方式。 根据本发明，通过使用接触角正确且精确地监测半导体元件的电特性（晶体管等中的阈值电压），并且通过控制掺杂方法来控制。 此外，本发明可以通过原位监测特性而瞬间获取信息，并且可以在没有时间延迟的情况下反馈。

公开(公告)号：US07250312B2

公开(公告)日：2007-07-31

申请号：US10910623

申请日：2004-08-04

申请人： Junichi Koezuka ,  Naoto Yamade

发明人： Junichi Koezuka ,  Naoto Yamade

IPC分类号： H01L21/66 ,  G01R31/26

CPC分类号： H01L22/24 ,  H01L27/12 ,  H01L27/1285 ,  H01L27/1292 ,  Y10S438/914

摘要： It is an object of the present invention to provide a doping apparatus, a doping method, and a method for fabricating a thin film transistor that can carry out doping to the carrier concentration which is optimum for obtaining the desired electric characteristic non-destructively and in an easy manner. In accordance with the present invention, an electric characteristic of a semiconductor element (threshold voltage in a transistor and the like) is correctly and precisely monitored by using a contact angle, and is controlled by controlling a doping method. In addition, the present invention can be momentarily acquired information by in-situ monitoring the characteristic and can be fed back without a time lag.

摘要翻译： 本发明的目的是提供一种掺杂装置，掺杂方法和制造薄膜晶体管的方法，所述薄膜晶体管可以对载流子浓度进行掺杂，这对于非破坏性地获得所需的电特性是最佳的 一个简单的方式。 根据本发明，通过使用接触角正确且精确地监测半导体元件的电特性（晶体管等中的阈值电压），并且通过控制掺杂方法来控制。 此外，本发明可以通过原位监测特性而瞬间获取信息，并且可以在没有时间延迟的情况下反馈。

公开(公告)号：US20070023700A1

公开(公告)日：2007-02-01

申请号：US11474499

申请日：2006-06-26

申请人： Junichi Koezuka ,  Hiroshi Ohki ,  Taku Hasegawa ,  Mami Goto

发明人： Junichi Koezuka ,  Hiroshi Ohki ,  Taku Hasegawa ,  Mami Goto

IPC分类号： H01J37/08

CPC分类号： H01J37/3171 ,  H01J27/024 ,  H01J37/302 ,  H01J37/32357 ,  H01J37/32412 ,  H01J37/3266 ,  H01J2237/006 ,  H01J2237/08 ,  H01L21/2236 ,  H01L27/1214 ,  H01L27/127 ,  H01L29/66757 ,  H01L29/78621

摘要： Doping with suppressed filament deterioration can be performed even in the case of doping in various conditions with an ion doping apparatus having a filament. After ion doping is completed, supply of a material gas is stopped and hydrogen or a rare gas is kept to be supplied. After that, current of the filament is decreased and correspondingly, filament temperature is decreased. Accordingly, in decreasing the filament temperature, the material gas around the filament has been replaced with hydrogen or a rare gas.

摘要翻译： 即使在具有灯丝的离子掺杂装置的各种条件下进行掺杂的情况下，也可以进行具有抑制的丝状劣化的掺杂。 离子掺杂完成后，停止供给原料气体，并保持供给氢气或稀有气体。 之后，灯丝的电流降低，灯丝温度降低。 因此，在降低灯丝温度时，灯丝周围的原料气体被氢气或稀有气体置换。

公开(公告)号：US20060177996A1

公开(公告)日：2006-08-10

申请号：US11346378

申请日：2006-02-03

申请人： Junichi Koezuka ,  Naoki Suzuki

发明人： Junichi Koezuka ,  Naoki Suzuki

IPC分类号： H01L21/26 ,  H01L21/42

CPC分类号： H01L29/78621 ,  H01L21/26513 ,  H01L29/66757

摘要： A doping method comprising the steps of; obtaining a proportion X of ions of a compound including a donor or an acceptor impurity in total ions from mass spectrum by using a first source gas of a first concentration; analyzing a peak concentration Y of the compound in a first processing object which is doped by using a second source gas of a second concentration equal to or lower than the first concentration, referring to a dose amount of total ions as Do and setting an acceleration voltage at a value, obtaining a dose amount D1 of total ions from a expression, Y=(D1/D0)(aX+b), and doping a second processing object with the donor or the acceptor impurity by a ion doping apparatus using a third source gas, wherein a dose amount of total ions is set at D1, and an acceleration voltage is set at the value.

摘要翻译： 一种掺杂方法，包括以下步骤： 通过使用第一浓度的第一源气体从质谱获得包含供体或受体杂质的化合物的离子的比例X; 分析通过使用等于或低于第一浓度的第二浓度的第二源气体掺杂的第一处理对象中的化合物的峰浓度Y，参考总离子的剂量为Do并设定加速电压 从表达式获得总离子的剂量D D 1，其中Y =（D 1 / D O 0）（aX + b），并且通过使用第三源气体的离子掺杂装置用施主或受体杂质掺杂第二处理对象，其中总离子的剂量量设定为D 1，加速度 电压设定在该值。

公开(公告)号：US09287407B2

公开(公告)日：2016-03-15

申请号：US13484670

申请日：2012-05-31

申请人： Junichi Koezuka ,  Shinji Ohno ,  Yuichi Sato ,  Shunpei Yamazaki

发明人： Junichi Koezuka ,  Shinji Ohno ,  Yuichi Sato ,  Shunpei Yamazaki

IPC分类号： H01L21/22 ,  H01L29/786 ,  H01L29/66

CPC分类号： H01L29/7869 ,  H01L29/24 ,  H01L29/4908 ,  H01L29/495 ,  H01L29/66969 ,  H01L29/78603 ,  H01L29/78618

摘要： A transistor using an oxide semiconductor, which has good on-state characteristics is provided. A high-performance semiconductor device including the transistor capable of high-speed response and high-speed operation is provided. The transistor includes the oxide semiconductor film including a channel formation region and low-resistance regions in which a metal element and a dopant are included. The channel formation region is positioned between the low-resistance regions in the channel length direction. In a manufacturing method of the transistor, the metal element is added by heat treatment performed in the state where the oxide semiconductor film is in contact with a film including the metal element and the dopant is added through the film including the metal element by an implantation method so that the low resistance regions in which a metal element and a dopant are included are formed.

摘要翻译： 提供了具有良好的导通状态特性的使用氧化物半导体的晶体管。 提供了包括能够进行高速响应和高速运行的晶体管的高性能半导体器件。 晶体管包括包括沟道形成区域的氧化物半导体膜和包含金属元素和掺杂剂的低电阻区域。 沟道形成区域位于沟道长度方向的低电阻区域之间。 在晶体管的制造方法中，通过在氧化物半导体膜与包含金属元素的膜接触的状态下进行的热处理来添加金属元素，并且通过植入通过包含金属元素的膜添加掺杂剂 形成包含金属元素和掺杂剂的低电阻区域。

公开(公告)号：US09260779B2

公开(公告)日：2016-02-16

申请号：US12781894

申请日：2010-05-18

申请人： Junichi Koezuka ,  Tetsunori Maruyama ,  Takayuki Saito ,  Yuki Imoto ,  Noriaki Uto ,  Yuta Endo ,  Hitomi Shionoya ,  Takuya Hirohashi ,  Shunpei Yamazaki

发明人： Junichi Koezuka ,  Tetsunori Maruyama ,  Takayuki Saito ,  Yuki Imoto ,  Noriaki Uto ,  Yuta Endo ,  Hitomi Shionoya ,  Takuya Hirohashi ,  Shunpei Yamazaki

IPC分类号： C23C14/08 ,  C23C14/34 ,  C23C14/06 ,  C23C14/58 ,  C23C14/54

CPC分类号： H01B1/02 ,  C23C14/0676 ,  C23C14/3414 ,  C23C14/541 ,  C23C14/5806

摘要： An object is to provide a transparent conductive film having favorable transparency and conductivity at low cost. Another object is to reduce the resistivity of a transparent conductive film formed using conductive oxynitride including zinc and aluminum. Another object is to provide a transparent conductive film that is formed using conductive oxynitride including zinc and aluminum. When aluminum and nitrogen are made to be included in a transparent conductive film formed using oxide including zinc to form a transparent conductive film that is formed using conductive oxynitride including zinc and aluminum, the transparent conductive film can have reduced resistivity. Heat treatment after the formation of the transparent conductive film that is formed using conductive oxynitride including zinc and aluminum enables reduction in resistivity of the transparent conductive film.

摘要翻译： 本发明的目的是提供一种透明导电膜，其具有良好的透明性和低导电性。 另一个目的是降低使用包括锌和铝的导电氮氧化物形成的透明导电膜的电阻率。 另一个目的是提供使用包括锌和铝的导电氮氧化物形成的透明导电膜。 当使用包含锌的氧化物形成的透明导电膜中包含铝和氮以形成使用包括锌和铝的导电氮氧化物形成的透明导电膜时，透明导电膜可以具有降低的电阻率。 在形成使用包括锌和铝的导电氮氧化物形成的透明导电膜之后的热处理使得能够降低透明导电膜的电阻率。

公开(公告)号：US08802493B2

公开(公告)日：2014-08-12

申请号：US13604937

申请日：2012-09-06

申请人： Junichi Koezuka ,  Shinji Ohno ,  Yuichi Sato ,  Sachiaki Tezuka ,  Tomokazu Yokoi ,  Yusuke Shino

发明人： Junichi Koezuka ,  Shinji Ohno ,  Yuichi Sato ,  Sachiaki Tezuka ,  Tomokazu Yokoi ,  Yusuke Shino

IPC分类号： H01L21/00

CPC分类号： H01L29/242 ,  H01L21/02565 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/84 ,  H01L27/10873 ,  H01L27/1156 ,  H01L27/1203 ,  H01L29/04 ,  H01L29/66757 ,  H01L29/7869

摘要： The contact resistance between an oxide semiconductor film and a metal film is reduced. A transistor that uses an oxide semiconductor film and has excellent on-state characteristics is provided. A semiconductor device capable of high-speed operation is provided. In a transistor that uses an oxide semiconductor film, the oxide semiconductor film is subjected to nitrogen plasma treatment. Thus, part of oxygen included in the oxide semiconductor film is replaced with nitrogen, so that an oxynitride region is formed. A metal film is formed in contact with the oxynitride region. The oxynitride region has lower resistance than the other region of the oxide semiconductor film. In addition, the oxynitride region is unlikely to form high-resistance metal oxide at the interface with the contacting metal film.

摘要翻译： 氧化物半导体膜与金属膜之间的接触电阻降低。 提供了使用氧化物半导体膜并且具有优异的导通状态特性的晶体管。 提供能够进行高速运转的半导体装置。 在使用氧化物半导体膜的晶体管中，对氧化物半导体膜进行氮等离子体处理。 因此，氧化物半导体膜中包含的部分氧被氮代替，从而形成氧氮化物区。 形成与氧氮化物区域接触的金属膜。 氧氮化物区域的电阻比氧化物半导体膜的其他区域低。 此外，氧氮化物区域不可能在与接触金属膜的界面处形成高电阻金属氧化物。

公开(公告)号：US08709922B2

公开(公告)日：2014-04-29

申请号：US13448611

申请日：2012-04-17

申请人： Junichi Koezuka ,  Naoto Yamade ,  Kyoko Yoshioka ,  Yuhei Sato ,  Mari Terashima

发明人： Junichi Koezuka ,  Naoto Yamade ,  Kyoko Yoshioka ,  Yuhei Sato ,  Mari Terashima

IPC分类号： H01L29/786 ,  H01L29/66

CPC分类号： H01L29/66969 ,  H01L21/02667 ,  H01L29/78606 ,  H01L29/78693

摘要： A highly reliable semiconductor device which is formed using an oxide semiconductor and has stable electric characteristics is provided. A semiconductor device which includes an amorphous oxide semiconductor layer including a region containing oxygen in a proportion higher than that in the stoichiometric composition, and an aluminum oxide film provided over the amorphous oxide semiconductor layer is provided. The amorphous oxide semiconductor layer is formed as follows: oxygen implantation treatment is performed on a crystalline or amorphous oxide semiconductor layer which has been subjected to dehydration or dehydrogenation treatment, and then thermal treatment is performed on the oxide semiconductor layer provided with an aluminum oxide film at a temperature lower than or equal to 450° C.

摘要翻译： 提供了使用氧化物半导体形成且具有稳定的电特性的高度可靠的半导体器件。 提供一种半导体器件，其包括非晶氧化物半导体层，所述非晶氧化物半导体层包括含有比所述化学计量组成中高的比例的氧的区域和设置在所述非晶氧化物半导体层上的氧化铝膜。 无定形氧化物半导体层如下形成：对已进行脱水或脱氢处理的结晶或非晶氧化物半导体层进行氧注入处理，然后对设置有氧化铝膜的氧化物半导体层进行热处理 在低于或等于450℃的温度下