公开(公告)号：US07960727B2

公开(公告)日：2011-06-14

申请号：US11992407

申请日：2006-09-21

申请人： Ken Nakahara ,  Yuji Hiroyuki

发明人： Ken Nakahara ,  Yuji Hiroyuki

IPC分类号： H01L29/10 ,  C30B25/18

CPC分类号： H01L33/28 ,  H01L29/225 ,  H01L29/7787 ,  H01L33/16 ,  H01S5/0207 ,  H01S5/0422 ,  H01S5/2201 ,  H01S5/2231 ,  H01S5/327

摘要： There is provided a zinc oxide based compound semiconductor device which, even when a semiconductor device is formed by forming a lamination portion having a hetero junction of ZnO based compound semiconductor layers, does not cause any rise in a drive voltage while ensuring p-type doping, and, at the same time, can realize good crystallinity and excellent device characteristics. ZnO based compound semiconductor layers (2) to (6) are epitaxially grown on the principal plane of a substrate (1) made of MgxZn1-xO (0≦x

摘要翻译： 提供了一种氧化锌基化合物半导体器件，即使当通过形成具有ZnO基化合物半导体层的异质结的层叠部分形成半导体器件时，也不会导致驱动电压的任何上升，同时确保p型掺杂 ，同时可以实现良好的结晶度和优异的器件特性。 ZnO基化合物半导体层（2）〜（6）在由Mg x Zn 1-x O（0＆nlE; x <1）构成的基板（1）的主面上外延生长。 基板的主平面是A平面{11-20}或M平面{10-10}在-c轴方向上倾斜的平面。

公开(公告)号：US20100065812A1

公开(公告)日：2010-03-18

申请号：US12227693

申请日：2006-05-26

申请人： Ken Nakahara ,  Norikazu Ito ,  Kazuaki Tsutsumi

发明人： Ken Nakahara ,  Norikazu Ito ,  Kazuaki Tsutsumi

IPC分类号： H01L33/04

CPC分类号： H01L33/04 ,  H01L33/06 ,  H01L33/32

摘要： Provided is a nitride semiconductor light emitting element having an improved carrier injection efficiency from a p-type nitride semiconductor layer to an active layer by simple means from a viewpoint utterly different from the prior art. A buffer layer 2, an undoped GaN layer 3, an n-type GaN contact layer 4, an InGaN/GaN superlattice layer 5, an active layer 6, an undoped InGaN layer 7, and a p-type GaN-based contact layer 8 are stacked on a sapphire substrate 1. A p-electrode 9 is formed on the p-type GaN-based contact layer 8. An n-electrode 10 is formed on a surface where the n-type GaN contact layer 4 is exposed as a result of mesa-etching. The undoped InGaN layer 7 is included in an intermediate semiconductor layer formed between the p-type GaN-based contact layer 8 and a well layer closest to a p-side in the active layer having a quantum well structure. The carrier injection efficiency into the active layer 6 can be improved by making the total film thickness of the intermediate semiconductor layer 20 nm or less.

摘要翻译： 提供了从与现有技术完全不同的观点，通过简单的手段，具有从p型氮化物半导体层到活性层的载流子注入效率提高的氮化物半导体发光元件。 缓冲层2，未掺杂的GaN层3，n型GaN接触层4，InGaN / GaN超晶格层5，有源层6，未掺杂的InGaN层7和p型GaN基接触层8 堆叠在蓝宝石衬底1上。在p型GaN基接触层8上形成p电极9.在n型GaN接触层4暴露的表面上形成n电极10作为 台面蚀刻的结果。 未掺杂的InGaN层7包括在形成在具有量子阱结构的有源层中的p型GaN基接触层8和最靠近p侧的阱层之间的中间半导体层中。 通过使中间半导体层的总膜厚为20nm以下，能够提高进入有源层6的载流子注入效率。

公开(公告)号：US20090294784A1

公开(公告)日：2009-12-03

申请号：US12084634

申请日：2006-11-07

申请人： Ken Nakahara ,  Atsushi Yamaguchi

发明人： Ken Nakahara ,  Atsushi Yamaguchi

IPC分类号： H01L33/00

CPC分类号： H01L33/20 ,  H01L21/78 ,  H01L33/0095 ,  H01L33/44

摘要： Provided are a nitride semiconductor light emitting element which does not suffer a damage on a light emitting region and has a high luminance without deterioration, even though the nitride semiconductor light emitting element is one in which electrodes are disposed opposite to each other and an isolation trench for chip separation and laser lift-off is formed by etching; and a manufacturing method thereof. An n-type nitride semiconductor layer 2 has a step, formed in a position beyond an active layer 3 when viewed from a p side. Up to the position of this step A, a protective insulating film 6 covers a part of the n-type nitride semiconductor layer 2, the active layer 3, a p-type nitride semiconductor layer 4, the side of a p electrode 5 and a part of the top side of the p electrode 5. The use of a structure having a chip side face covered with the protective insulating film 6 prevents the active layer or the like from being exposed to an etching gas for a long time when an isolation trench for chip separation or laser lift-off is formed by etching.

摘要翻译： 提供一种氮化物半导体发光元件，即使氮化物半导体发光元件是彼此相对设置的电极和隔离沟槽，也不会对发光区域造成损害并具有高亮度而不劣化 通过蚀刻形成芯片分离和激光剥离; 及其制造方法。 当从p侧观察时，n型氮化物半导体层2具有形成在超过有源层3的位置的台阶。 直到该步骤A的位置，保护绝缘膜6覆盖n型氮化物半导体层2，有源层3，p型氮化物半导体层4，p型电极5的一侧和一部分 使用由保护绝缘膜6覆盖的具有芯片侧面的结构使得有源层等长时间暴露于蚀刻气体时，当用于 通过蚀刻形成芯片分离或激光剥离。

公开(公告)号：US07605012B2

公开(公告)日：2009-10-20

申请号：US11166254

申请日：2005-06-27

申请人： Shigeru Niki ,  Paul Fons ,  Kakuya Iwata ,  Tetsuhiro Tanabe ,  Hidemi Takasu ,  Ken Nakahara

发明人： Shigeru Niki ,  Paul Fons ,  Kakuya Iwata ,  Tetsuhiro Tanabe ,  Hidemi Takasu ,  Ken Nakahara

IPC分类号： H01L21/00

CPC分类号： H01L33/28 ,  H01L33/0087 ,  H01S5/021 ,  H01S5/32308 ,  H01S5/32341 ,  H01S5/327

摘要： A light emitting device includes a silicon substrate (1), a silicon nitride film (2) formed on the surface of the silicon substrate (1), at least an n-type layer (3), (4) and a p-type layer (6), (7) which are formed on the silicon nitride film (2) and also which are made of a ZnO based compound semiconductor, and a semiconductor layer lamination (11) in which layers are laminated to form a light emitting layer. Preferably this silicon nitride film (2) is formed by thermal treatment conducted in an atmosphere containing nitrogen such as an ammonium gas. Also, in another embodiment, a light emitting device is formed by growing a ZnO based compound semiconductor layer on a main face of a sapphire substrate, the main face being perpendicular to the C-face thereof. As a result, it is possible to obtain a device using a ZnO based compound with high properties such as an LED very excellent in crystallinity and having a high light emitting efficiency.

摘要翻译： 发光器件包括：硅衬底（1），形成在硅衬底（1）的表面上的氮化硅膜（2），至少n型层（3），（4）和p型 形成在氮化硅膜（2）上并且由ZnO基化合物半导体制成的层（6），（7）和层叠层以形成发光层的半导体层层叠体 。 优选地，该氮化硅膜（2）通过在含氮气体的气氛中进行热处理而形成。 此外，在另一实施例中，通过在蓝宝石衬底的主面上生长ZnO基化合物半导体层，主面垂直于其C面而形成发光器件。 结果，可以获得使用具有高性能的ZnO基化合物的器件，例如非常优异的结晶度并且具有高发光效率的LED。

公开(公告)号：US20090146160A1

公开(公告)日：2009-06-11

申请号：US12085836

申请日：2006-11-29

申请人： Ken Nakahara

发明人： Ken Nakahara

IPC分类号： H01L33/00

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/0254 ,  H01L21/02609 ,  H01L33/007 ,  H01L33/16 ,  H01S5/22 ,  H01S5/3202 ,  H01S5/3216

摘要： Provided is a gallium nitride semiconductor light emitting element capable of stabilizing a drive voltage by reducing carrier depletion attributable to spontaneous polarization and piezo polarization generated at the interface between an AlGaN semiconductor layer and a GaN semiconductor layer.A gallium nitride semiconductor crystal 2 including a light emitting region is formed on the R plane of a sapphire substrate 1. In addition, in another constitution, a gallium nitride semiconductor crystal 2 is formed on the A plane of a GaN substrate 3 or on the M plane of a GaN substrate 4. The growth surface of these gallium nitride semiconductor crystals 2 are not an N (nitrogen) polar face or a Ga polar face but are non-polar faces. This can decrease the strength of an electric field caused by spontaneous polarization and piezo polarization generated at the interface of GaN/AlGaN at the p side. Thus, carrier depletion can be avoided.

摘要翻译： 提供一种氮化镓半导体发光元件，其能够通过减少归因于在AlGaN半导体层和GaN半导体层之间的界面处产生的自发极化和压电极化的载流子耗尽来稳定驱动电压。 在蓝宝石衬底1的R平面上形成包括发光区域的氮化镓半导体晶体2.此外，在另一构造中，在GaN衬底3的A平面上或在GaN衬底3的A平面上形成氮化镓半导体晶体2 这些氮化镓半导体晶体2的生长面不是N（氮）极面或Ga极性面，而是非极性面。 这可以降低在p侧的GaN / AlGaN界面处产生的自发极化和压电极化引起的电场的强度。 因此，可以避免载体耗尽。

公开(公告)号：US20090097521A1

公开(公告)日：2009-04-16

申请号：US12225095

申请日：2007-03-15

申请人： Ken Nakahara

发明人： Ken Nakahara

IPC分类号： H01S5/18 ,  H01L21/02

CPC分类号： H01S5/22 ,  H01L33/0033 ,  H01L33/20 ,  H01L33/36

摘要： A side surface light emitting semiconductor element includes: an AlGaN layer doped with Mg at a concentration equal to or less than 5×1019 cm−3; a ridge having a striped shape and formed in an upper portion of a laminated structure which includes the AlGaN layer and an active layer; and a Schottky barrier formed on a top surface of the laminated structure in an area where the ridge is not formed and the AlGaN layer is exposed.

摘要翻译： 侧面发光半导体元件包括：掺杂有等于或小于5×10 19 cm -3的Mg的AlGaN层; 具有条纹形状并形成在包括AlGaN层和有源层的层叠结构的上部的脊; 以及形成在层叠结构的顶面上的肖特基势垒，在不形成脊的区域和AlGaN层露出的区域。

公开(公告)号：US20090045393A1

公开(公告)日：2009-02-19

申请号：US11920092

申请日：2006-05-08

申请人： Ken Nakahara

发明人： Ken Nakahara

IPC分类号： H01L33/00

CPC分类号： H01L33/007 ,  H01L21/02403 ,  H01L21/02414 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0251 ,  H01L21/0254 ,  H01L29/2003 ,  H01L29/7787 ,  H01L33/0079 ,  H01S5/0211 ,  H01S5/0217 ,  H01S5/0218 ,  H01S5/32341

摘要： There are provided a nitride semiconductor device having a structure capable of improving crystallinity of grown nitride semiconductor, carrying out easily removing a substrate, and dividing into chips very easily, by using zinc oxide based compound having excellent processability as a substrate, and a method for manufacturing the same. In case that a nitride semiconductor device is formed by laminating nitride semiconductor layers on a substrate (1), the substrate (1) is made of MgxZn1-xO (0

摘要翻译： 提供了一种具有能够改善生长的氮化物半导体的结晶度的结构的氮化物半导体器件，通过使用具有优异的加工性的氧化锌基化合物作为基底，能够容易地除去衬底并且非常容易地分成芯片，以及用于 制造相同。 在氮化物半导体器件通过在衬底（1）上层叠氮化物半导体层而形成氮化物半导体器件的情况下，衬底（1）由Mg x Zn 1-x O（0

公开(公告)号：US20090026468A1

公开(公告)日：2009-01-29

申请号：US12224524

申请日：2007-02-22

申请人： Mitsuhiko Sakai ,  Tadahiro Okazaki ,  Ken Nakahara

发明人： Mitsuhiko Sakai ,  Tadahiro Okazaki ,  Ken Nakahara

IPC分类号： H01L33/00

CPC分类号： H01L33/22 ,  H01L33/20 ,  H01L33/32

摘要： In a semiconductor light emitting element, a p-type layer (220), an active layer (230) and an n-type layer (240) are laminated on a substrate in this order. The n-type layer (240) is formed with a rectangular n-side electrode (241) whose width in one direction is equal to that of the n-type layer (240). The thickness t of the n-type layer (240) satisfies Formula 1 below. The semiconductor light emitting element includes a side surface (270) extending in the lamination direction and formed with a plurality of projections (271). Supposing that the wavelength of the light from the active-layer (230) is λ and the index of refraction of the n-type layer (240) or the p-type layer (220) is n, the average WA of widths at bottoms of the projections is set to satisfy WA≧λ/n. t ≥ ρ   J 0  e 4  γκ B  T · W  ( L - W ) Formula   1 where L is width of the n-type layer in a direction different from the one direction, T is absolute temperature, W is width of the n-side electrode in a direction different from the one direction, J0 is current density at the contact portion between the n-side electrode and the n-type layer, e is elementary charge, γ is diode ideality factor, κB is Boltzmann constant, ρ is specific resistance of the n-type semiconductor layer.

公开(公告)号：US06987029B2

公开(公告)日：2006-01-17

申请号：US10713205

申请日：2003-11-17

申请人： Shigeru Niki ,  Paul Fons ,  Kakuya Iwata ,  Tetsuhiro Tanabe ,  Hidemi Takasu ,  Ken Nakahara

发明人： Shigeru Niki ,  Paul Fons ,  Kakuya Iwata ,  Tetsuhiro Tanabe ,  Hidemi Takasu ,  Ken Nakahara

IPC分类号： H01L21/00

CPC分类号： H01L33/28 ,  H01L33/0087 ,  H01S5/021 ,  H01S5/32308 ,  H01S5/32341 ,  H01S5/327

摘要： A light emitting device includes a silicon substrate (1), a silicon nitride film (2) formed on the surface of the silicon substrate (1), at least an n-type layer (3), (4) and a p-type layer (6), (7) which are formed on the silicon nitride film (2) and also which are made of a ZnO based compound semiconductor, and a semiconductor layer lamination (11) in which layers are laminated to form a light emitting layer. Preferably this silicon nitride film (2) is formed by thermal treatment conducted in an atmosphere containing nitrogen such as an ammonium gas. Also, in another embodiment, a light emitting device is formed by growing a ZnO based compound semiconductor layer on a main face of a sapphire substrate, the main face being perpendicular to the C-face thereof. As a result, it is possible to obtain a device using a ZnO based compound with high properties such as an LED very excellent in crystallinity and having a high light emitting efficiency.

摘要翻译： 发光器件包括：硅衬底（1），形成在硅衬底（1）的表面上的氮化硅膜（2），至少n型层（3），（4）和p型 形成在氮化硅膜（2）上并且由ZnO基化合物半导体制成的层（6），（7）和层叠层以形成发光层的半导体层层叠体 。 优选地，该氮化硅膜（2）通过在含氮气体的气氛中进行热处理而形成。 此外，在另一实施例中，通过在蓝宝石衬底的主面上生长ZnO基化合物半导体层，主面垂直于其C面而形成发光器件。 结果，可以获得使用具有高性能的ZnO基化合物的器件，例如非常优异的结晶度并且具有高发光效率的LED。

公开(公告)号：US06735230B1

公开(公告)日：2004-05-11

申请号：US09786337

申请日：2001-03-08

申请人： Tetsuhiro Tanabe ,  Ken Nakahara

发明人： Tetsuhiro Tanabe ,  Ken Nakahara

IPC分类号： H01S319

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01L33/62 ,  H01L2224/45144 ,  H01L2224/48247 ,  H01L2224/4903 ,  H01L2224/73265 ,  H01S5/021 ,  H01S5/02212 ,  H01S5/0224 ,  H01S5/02272 ,  H01S5/02276 ,  H01S5/32308 ,  H01L2224/48091 ,  H01L2924/00014 ,  H01L2924/00

摘要： On the surface of a conductive substrate (1) of GaAs, Ge, Si, etc., a semiconductor lamination section including a light emitting layer forming portion (11) that has at least an n-type layer (4) and a p-type layer (6) made from a compound semiconductor of a Group III element and nitrogen and that is laminated so as to form a light emitting layer is formed through a buffer layer (2) suitable for the substrate. As a result, a semiconductor light emitting device using a Group III nitride compound semiconductor, which is of a vertical type that allows electrodes to be taken out from both of the upper and lower surfaces of a chip, has superior crystalline properties with high light emitting efficiency, and exhibits cleavage, is obtained. Therefore, it is possible to easily mount a LD chip on a sub-mount having a good thermal conductivity, and consequently to prevent a reduction and degradation in the light emitting efficiency (differential quantum efficiency) due to heat.

摘要翻译： 在GaAs，Ge，Si等的导电性基板（1）的表面上，具有至少具有n型层（4）和p型层的发光层形成部（11）的半导体层叠部 通过由III族元素的化合物半导体制成的并且层叠以形成发光层的层型（6）通过适合于该基板的缓冲层（2）形成。 结果，使用具有允许电极从芯片的上表面和下表面中取出的电极的垂直型III族氮化物化合物半导体的半导体发光器件具有优异的晶体性质，具有高发光 效率，并显示出裂解。 因此，可以容易地将LD芯片安装在具有良好导热性的子座上，从而防止由于热导致的发光效率（微分量子效率）的降低和劣化。